65728
Abstract: No abstract text available
Text: HM 65767B MATRA MHS 16 K x 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. All inputs and outputs of the HM 65767B are TTL compatible and operate from single 5 V supply thus
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65767B
65767B
16384x1
65728
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XC3S1000-FT256
Abstract: XC3S1000-FG456 XC2VP30-FF896 XILINX/SPARTAN-3 XC3S200 XC2V3000-BG728 XC2VP4-FG456 XC3S200FT256 XC2V1000-FG456 XC2V3000-FG676 XC2VP20 fg676
Text: XPressArray-II 0.15mm Structured ASIC Data Sheet 1.0 Key Features • Next-generation 0.15µm structured ASIC • Platform for high-performance 1.5V/1.2V ASICs and FPGA-to-ASIC conversions • NRE and production cost savings • Significant time-to-market advantages
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210MHz
500MHz
332kbits
18kbit
330MHz
XC3S1000-FT256
XC3S1000-FG456
XC2VP30-FF896
XILINX/SPARTAN-3 XC3S200
XC2V3000-BG728
XC2VP4-FG456
XC3S200FT256
XC2V1000-FG456
XC2V3000-FG676
XC2VP20 fg676
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Untitled
Abstract: No abstract text available
Text: XPressArray-II 0.15mm Structured ASIC Data Sheet 1.0 Key Features • Next-generation 0.15µm structured ASIC • Platform for high-performance 1.5V/1.2V ASICs and FPGA-to-ASIC conversions • NRE and production cost savings • Significant time-to-market advantages
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210MHz
500MHz
332kbits
18kbit
330MHz
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ra1613
Abstract: FB360 HSTL18 XC2V3000-BG728 XC3S1000-FT256 XC3S200-ft256 X2P376 X2P528 X2P680 BGA 728 35x35 1.27
Text: XPressArray-II 0.15mm Structured ASIC Data Sheet 1.0 Key Features • Next-generation 0.15mm hybrid structured ASIC • Initializable distributed memory at speeds up to 210MHz • Platform for high-performance 1.5V/1.2V ASICs and FPGAto-ASIC conversions • Configurable signal, core and I/O power supply pin locations
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210MHz
PCI33,
PCI66,
ra1613
FB360
HSTL18
XC2V3000-BG728
XC3S1000-FT256
XC3S200-ft256
X2P376
X2P528
X2P680
BGA 728 35x35 1.27
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HM6287HL-35
Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
Text: Quick Reference Guide to Hitachi IC Memories Contens MOS RAM MOS Static RAM Static RAM Module MOS Pseudo Static RAM Application Specific Memory Synchronous Graphic RAM Dynamic RAM Module MOS Dynamic RAM Synchronous Dynamic RAM MOS ROM MOS Mask ROM MOS EEPROM
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Untitled
Abstract: No abstract text available
Text: XPressArray-II 0.15mm Structured ASIC Data Sheet 1.0 Key Features • Next-generation 0.15mm hybrid structured ASIC • Initializable distributed memory at speeds up to 210MHz • Platform for high-performance 1.5V/1.2V ASICs and FPGAto-ASIC conversions • Configurable signal, core and I/O power supply pin locations
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210MHz
PCI33,
PCI66,
X2P680
X2P846
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delta39k
Abstract: No abstract text available
Text: Delta39KTM and Quantum38KTM Single-Port Memory Introduction Channel and Cluster Memory The purpose of this application note is to provide instruction for all aspects of implementing synchronous/asynchronous Single-Port Random-Access-Memory SPRAM and Single-Port Read-Only-Memory (SPROM) in Delta39K and
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Delta39KTM
Quantum38KTM
Delta39K
Quantum38K
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Untitled
Abstract: No abstract text available
Text: T em ic HM 65767B MATRA MHS 16 K X 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. All inputs and outputs of the HM 65767B are TIL
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65767B
65767B
16384x1
bfl45b
00GS411
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Untitled
Abstract: No abstract text available
Text: G E C P L E S S E Y ma9067 BmBiDQQmBQQQI Ra<^'at'on H a rd 16384x1 Bit Static RAM Preliminary Data S10300PDS issue 2.3 O ctober 1990 Features • 1.5|im CM OS-SOS technology • Latch up free • Fast access time 100ns typical • Total dose 106 rad (Si)
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ma9067
16384x1
S10300PDS
100ns
MA9067
16384x1
MA9067_
MAx9067xxxxx
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HM 65767B
Abstract: 300MILS
Text: Tem ic Semiconductors 16 K x 1 High Speed CMOS SRAM HM 65767B Short description. Please refer to the full datasheet available on TEMIC web for detailed technical information. Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using
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65767B
65767B
16384x1
ss65W
HM 65767B
300MILS
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t 16 k
Abstract: F01011
Text: Tem ic HM 65767B MATRA MHS 16 K X 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. Access times as fast as 25 ns are available with maximum
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65767B
16384x1
00GS411
t 16 k
F01011
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16x4
Abstract: 16384x1 ram
Text: Bipolar Memory Bipolar Memory RAM Functional Index and Selection Guide Part Number RAM B IP O L A R E C L R A M A c c e s s Tim e Iee C O M ’ L/M IL C O M ’L/M IL O rganization Max Max ECL Serie« Number o f P in s Packages -1 5 0 /-1 6 5 10K 16 d ,p ,f ,l
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Am10415SA
Am10415A
104l5
Am100415A
Am100415
Am10470SA
0470A
Am10470
100470S
Am100470A
16x4
16384x1 ram
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256X4
Abstract: 1024x4 AM2168 Am91L22
Text: MOS Memory MOS Memory Functional Index and Selection Guide 1K STATIC RAMS Part Number Am 9122-25 A m 9122-35 Am91L22-35 Am91 L22-45 Am9122-60 Organization 256 x 4 256 x 4 256 x 4 256x4 256 x 4 Acceee Tlme ns 25 35 36 45 60 Power DMpation(mW ) Standby - Active
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Am91L22-35
L22-45
Am9122-60
256x4
Am2147
Am2147-45
Am2147-65
Am2147-70
Am21L47-45
Am21147
1024x4
AM2168
Am91L22
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hm65767
Abstract: HM 65767B 65767B
Text: HM 65767B DATA SHEET_ 16 Kx 1 HIGH SPEED CMOS SRAM FEATURES FAST ACCESS TIME COMMERCIAL : 25/35/45/55 ns max MILITARY : 25/35/45/55 ns (max) LOW POWER CONSUMPTION ACTIVE: 385 mW (max) STANDBY : 110 mW (max) WIDE TEMPERATURE RANGE : - 55'C TO + 125’C
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65767B
16384x1
50KHzÂ
HM65767B/Rev
hm65767
HM 65767B
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ HM 65767B 16 K x 1 HIGH SPEED CMOS SRAM FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE SINGLE 5 VOLT SUPPLY FAST ACCESS TIME
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65767B
65767B
GDG33T3
65767Bi
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Untitled
Abstract: No abstract text available
Text: IlM lI September 1989 HM 65767 DATASHEET 16 K X 1 HIGH SPEED CMOS SRAM FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE SINGLE 5 VOLT SUPPLY FAST ACCESS TIME
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Untitled
Abstract: No abstract text available
Text: T> m SñbñMSb OGQllD? n llll I f T MATRA MTT « M f l H S l i i September 1990 il H S HM 65767 DATASHEET 16 K X 1 HIGH SPEED CMOS SRAM FEATURES . . . . 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN
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MSD 7818
Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
Text: In n in ik ü r Q fâ lI Information Applikation RGW Typen übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1
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6250b
MSD 7818
MN9106
information applikation
7490 N
TDA 5700
information applikation mikroelektronik
udssr hefte
143KT1
Mikroelektronik Information Applikation
K 176 LE, K 561 LN
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Halbleiterbauelemente DDR
Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
Text: íx}i3í iu ]9n;g'q s p o s i l i o j p j S j © DNmiAf W¥S±±na N31¥Q >l!UDüq>|! ZUR B E A C H T U N G Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elektronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" LEB)
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R-1035
Halbleiterbauelemente DDR
transistor vergleichsliste
u82720
Datenblattsammlung
VEB mikroelektronik
aktive elektronische bauelemente ddr
mikroelektronik datenblattsammlung
je 3055 Motorola
mikroelektronik DDR
Transistor Vergleichsliste DDR
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MH1SS1
Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Text: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik
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MOSTEK 36000
Abstract: 3861 mostek MK2408P MK2500P
Text: CONTENTS I. Functional/Numerical Index II. Shift Registers III. Read Only Memories 16K ROMs 32K ROMs 64K ROMs Programmable ROMs Random Access Memories 4K Dynamic RAMs 16K Dynamic RAMs 4K Static RAMs IV. V. Application Information VI. Packaging VII. Reliability Information
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1002P
1007P
1007N
MOSTEK 36000
3861 mostek
MK2408P
MK2500P
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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HN462532G
Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Text: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .
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