2SC3519
Abstract: 2SC3519A transistor 2sc3519 2SA1386
Text: 2SC3519/3519A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1386/A VCB= V IEBO 15 A V(BR)CEO µA 100max VEB=5V 160min IC=25mA 180min V 4 A hFE VCE=4V, IC=5A 50min∗ PC 130(Tc=25°C) W VCE(sat) IC=5A, IB=0.5A 2.0max V Tj 150 °C fT VCE=12V, IE=–2A
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2SC3519/3519A
2SA1386/A)
2SC3519A
100max
160min
180min
50min
50typ
250typ
2SC3519
2SC3519A
transistor 2sc3519
2SA1386
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igd 001
Abstract: EFA240D-CP083
Text: EFA240D-CP083 Low Distortion GaAs Power FET UPDATED 06/13/2006 .096 .290±0.005 FEATURES • • • • • • 2X .065 ±.015 NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +30.5dBm OUTPUT POWER 17.0 dB TYPICAL POWER GAIN AT 2 GHz 0.5x2400 MICRON RECESSED “MUSHROOM” GATE
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EFA240D-CP083
160MIL
5x2400
175oC
-65/175oC
igd 001
EFA240D-CP083
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EPA480C-CP083
Abstract: No abstract text available
Text: Excelics EPA480C-CP083 PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +35.5dBm TYPICAL OUTPUT POWER 17.5dB TYPICAL POWER GAIN AT 2GHz 0.4 X 4800 MICRON RECESSED
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EPA480C-CP083
160MIL
Idss25
EPA480C-CP083
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EPA960C-CP083
Abstract: No abstract text available
Text: Excelics EPA960C-CP083 PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +38.0dBm TYPICAL OUTPUT POWER 16.5dB TYPICAL POWER GAIN AT 2GHz 0.4 X 9600 MICRON RECESSED
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EPA960C-CP083
160MIL
EPA960C-CP083
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EFA480C-CP083
Abstract: No abstract text available
Text: Excelics EFA480C-CP083 PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +33.5dBm TYPICAL OUTPUT POWER 16.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE
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EFA480C-CP083
160MIL
EFA480C-CP083
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2SC2921
Abstract: 2SA1215 DSA0016507
Text: 2SC2921 Application : Audio and General Purpose Conditions Ratings Unit VCB=160V 100max µA VEB=5V 100max µA IC=25mA 160min V VCEO 160 V IEBO VEBO 5 V V BR CEO IC 15 A hFE VCE=4V, IC=5A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 150(Tc=25°C) W fT
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2SC2921
2SA1215)
MT-200
100max
160min
50min
60typ
200typ
2SC2921
2SA1215
DSA0016507
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EFA720AV-CP083
Abstract: No abstract text available
Text: EFA720AV-CP083 Low Distortion GaAs Power FET UPDATED 01/30/2006 FEATURES ● EFA • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +33.5dBm OUTPUT POWER 17.0 dB TYPICAL POWER GAIN AT 2 GHz 0.5x4800 MICRON RECESSED “MUSHROOM” GATE
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EFA720AV-CP083
160MIL
5x4800
720AV
175oC
-65/175oC
EFA720AV-CP083
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cs98010
Abstract: sony DVD player power circuit diagram PCOR CS98010-CQ sony car stereo PIP VIDEO ENCODER CS98000 CS98000-CQ XMT958 b1103
Text: CS98000 Internet DVD iDVD Chip Solution Features Description l Powerful Dual 32-bit RISCs >160MIPS l Software based on popular RTOS, C/C+ l MPEG video decoder supports DVD, VCD, VCD 3.0, SVCD standards l Video input with picture-in-picture & zoom l 8-bit multi-region OSD w/vertical flicker filter
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CS98000
32-bit
160MIPS
IEC-60958/61937
DS525PP1
cs98010
sony DVD player power circuit diagram
PCOR
CS98010-CQ
sony car stereo
PIP VIDEO ENCODER
CS98000
CS98000-CQ
XMT958
b1103
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EFA480C-CP083
Abstract: fet 721
Text: EFA480C-CP083 Low Distortion GaAs Power FET UPDATED 12/28/2004 FEATURES • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +33.5 dBm OUTPUT POWER AT 1dB COMPRESSION 16.0 dB GAIN AT 2 GHz 0.5x4800 MICRON RECESSED “MUSHROOM” GATE
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EFA480C-CP083
160MIL
5x4800
EFA480C-CP083
fet 721
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Untitled
Abstract: No abstract text available
Text: G35160 35A HIGH VOLTAGE GLASS PASSIVATED CELL DIODE WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction Low Leakage Low Forward Voltage High Surge Current Capability Die Size 160mil SQ Anode + C D Mechanical Data
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G35160
160mil
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2SC2921
Abstract: 2SA1215 transistor 2SC2921 2sc2921 sanken
Text: 2SC2921 Application : Audio and General Purpose Unit VCB=160V 100max µA VEB=5V 100max µA IC=25mA 160min V VCEO 160 V IEBO VEBO 5 V V BR CEO IC 15 A hFE VCE=4V, IC=5A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 150(Tc=25°C) W fT VCE=12V, IE=–2A
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2SC2921
2SA1215)
MT-200
100max
160min
50min
60typ
2SC2921
2SA1215
transistor 2SC2921
2sc2921 sanken
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igd 001
Abstract: EPA240D-CP083
Text: EPA240D-CP083 High Efficiency Heterojunction Power FET UPDATED 07/19/2006 • • • • • • .096 .290±0.005 FEATURES NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +32.5 dBm OUTPUT POWER AT 1dB COMPRESSION 18.5 dB GAIN AT 2 GHz 0.5x2400 MICRON RECESSED “MUSHROOM” GATE
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EPA240D-CP083
160MIL
5x2400
175oC
-65/175oC
igd 001
EPA240D-CP083
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EFA960C-CP083
Abstract: No abstract text available
Text: Excelics EFA960C-CP083 PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +36.0dBm TYPICAL OUTPUT POWER 15.5dB TYPICAL POWER GAIN AT 2GHz 0.5 X 9600 MICRON RECESSED “MUSHROOM” GATE
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EFA960C-CP083
160MIL
EFA960C-CP083
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Untitled
Abstract: No abstract text available
Text: EPA120E-CP083 High Efficiency Heterojunction Power FET UPDATED 02/15/2005 FEATURES • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +29 dBm OUTPUT POWER AT 1dB COMPRESSION 19.5 dB GAIN AT 2 GHz 0.3x1200 MICRON RECESSED “MUSHROOM” GATE
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EPA120E-CP083
160MIL
3x1200
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AH420-EPCB900
Abstract: AH420-EPCB2140
Text: AH420 4W High Linearity InGaP HBT Amplifier Product Features Functional Diagram Product Description • 400 – 2400 MHz The AH420 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with up to -45 dBc ACLR and
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AH420
AH420
1-800-WJ1-4401
AH420-EPCB900
AH420-EPCB2140
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T25C
Abstract: No abstract text available
Text: AH420 4W High Linearity InGaP HBT Amplifier Product Features Functional Diagram Product Description • 400 – 2700 MHz The AH420 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with -49 dBc ACLR and +35.7
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AH420
AH420
1-800-WJ1-4401
T25C
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Untitled
Abstract: No abstract text available
Text: 1/2 Chip Beads(SMD) For Power Line Conformity to RoHS Directive MPZ Series MPZ1005 Type SHAPES AND DIMENSIONS/RECOMMENDED PC BOARD PATTERN 1±0.05 0.5 0.5±0.05 FEATURES • TDK has manufactured MPZ1005 type as EMI countermeasure product for power line.
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MPZ1005
100MHz]
ree10000
MPZ1005S600C
MPZ1005S121C
300min.
160min.
200min.
60min.
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MLP2520V-S
Abstract: MLP2520S100M MLP1608V2R2B MLP1608 MLP2012V MLP1608V1R0B MLP2016S4R7MT MLP2012V1R0MT MLP2016 MLP2016SR47M
Text: Inductors for Power Circuits Multilayer/STD • magnetic shielded MLP series Type: MLP1608 MLP2012 MLP2016 MLP2520 1608[0603 inch]* 2012[0805 inch] 2016[0806 inch] 2520[1008 inch] * Dimensions Code JIS[EIA] Issue date: February 2012 • All specifications are subject to change without notice.
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MLP1608
MLP2012
MLP2016
MLP2520
2002/95/EC,
MLP1608
MLP2520V-S
MLP2520H-M
160min.
200min.
MLP2520S100M
MLP1608V2R2B
MLP2012V
MLP1608V1R0B
MLP2016S4R7MT
MLP2012V1R0MT
MLP2016SR47M
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S471A
Abstract: MPZ1608B471A TDK D600B MPZ1005Y MPZ1608D101B S102A MPZ1608S601 mpz1608b471
Text: Chip Beads For power line MPZ series Type: MPZ0603 MPZ1005 MPZ1608 MPZ2012 0603[0201 inch]* 1005[0402 inch] 1608[0603 inch] 2012[0805 inch] * Dimensions Code JIS[EIA] Issue date: November 2011 • All specifications are subject to change without notice. • Conformity to RoHS Directive: This means that, in conformity with EU Directive 2002/95/EC, lead, cadmium, mercury, hexavalent chromium, and specific
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MPZ0603
MPZ1005
MPZ1608
MPZ2012
2002/95/EC,
MPZ0603
MPZ2012S601A
MPZ2012S102A
300min.
160min.
S471A
MPZ1608B471A
TDK D600B
MPZ1005Y
MPZ1608D101B
S102A
MPZ1608S601
mpz1608b471
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08FFS-SP-TF
Abstract: No abstract text available
Text: FFS CONNECTOR 1.25mm Emboss Tape Connectors for FFC pitch Features –––––––––––––––––––––––– • Surface mountable SMT Because of its small pitch and its ability to be surface mounted, this connector meets the demand for high-density packaging.
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mlz2012
Abstract: MLZ2012N100LT MLZ2012N MLZ2012M MLZ1608N100LT MLZ2012N4R7 MLZ1608A mlz1608m220 MLZ2012M150W MLZ1005M1R0W
Text: Inductors for Decoupling Circuits Multilayer/STD • magnetic shielded MLZ series Type: MLZ1005W MLZ1608 MLZ2012 1005[0402 inch]* 1608[0603 inch] 2012[0805 inch] * Dimensions Code JIS[EIA] Issue date: May 2012 • All specifications are subject to change without notice.
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MLZ1005W
MLZ1608
MLZ2012
2002/95/EC,
MLZ1005W
300min.
160min.
200min.
60min.
MLZ2012N100LT
MLZ2012N
MLZ2012M
MLZ1608N100LT
MLZ2012N4R7
MLZ1608A
mlz1608m220
MLZ2012M150W
MLZ1005M1R0W
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS1OASJ-3 HIGH-SPEED SWITCHING USE FS1 OASJ-3 ' 4V DRIVE ' V d s s . ' rDS ON (MAX) . ' Id . ' Integrated Fast Recovery Diode (TYP.) .150V . 160mi2 . 10A 90ns APPLICATION
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OCR Scan
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160mi2
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS1OASH-3 HIGH-SPEED SWITCHING USE FS1 OASH-3 OUTLINE DRAWING Dimensions in mm 6.5 5 .0 1 0 .2 l] 0 .5 1 0 .2 0.8 Q i ' 2.5V DRIVE ' V d s s . .,150V 160mi2 . 10A
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160mi2
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10KMH-3 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2 .8 1 0 .2 2.5V DRIVE V d s s . 150V rDS ON (MAX). 160mi2
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FS10KMH-3
160mi2
O-220FN
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