60EPS16
Abstract: P035H
Text: Bulletin I2185 12/04 SAFEIR Series 60EPS16PbF INPUT RECTIFIER DIODE VF < 1V @ 30A Lead-Free "PbF" suffix IFSM = 950A VRRM = 1600V Major Ratings and Characteristics Characteristics IF(AV) Sinusoidal Description/ Features Values Units 60 A waveform mized for very low forward voltage drop, with moderate
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I2185
60EPS16PbF
60EPS16PbF
12-Mar-07
60EPS16
P035H
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T 4512 H diode
Abstract: diode T 4512 H diode rectifier p 600
Text: Bulletin 12122 rev. A 07/97 International TOR Rectifier SA FElR Series 60EPS. INPUT RECTIFIER DIODE VF < 1V @ 30A 'f s m = 950A VRRM800 to 1600V Description/Features The 60EPS. rectifierSA FE //?series has been optimized for very low forward voltage drop, with moderate leakage.
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60EPS.
800tig.
O-247AC
T 4512 H diode
diode T 4512 H
diode rectifier p 600
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p035h
Abstract: 60EPS16
Text: Bulletin I2185 12/04 SAFEIR Series 60EPS16PbF INPUT RECTIFIER DIODE VF < 1V @ 30A Lead-Free "PbF" suffix IFSM = 950A VRRM = 1600V Major Ratings and Characteristics Characteristics IF(AV) Sinusoidal Description/ Features Values Units 60 A waveform mized for very low forward voltage drop, with moderate
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I2185
60EPS16PbF
60EPS16PbF
O-247AC
p035h
60EPS16
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Untitled
Abstract: No abstract text available
Text: Bulletin I2185 12/04 SAFEIR Series 60EPS16PbF INPUT RECTIFIER DIODE VF < 1V @ 30A Lead-Free "PbF" suffix IFSM = 950A VRRM = 1600V Major Ratings and Characteristics Characteristics IF(AV) Sinusoidal Description/ Features Values Units 60 A waveform mized for very low forward voltage drop, with moderate
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I2185
60EPS16PbF
60EPS16PbF
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: Bulletin 12122 rev. A 07/97 International IS R Rectifier SAFE/R Series 60EPS. INPUT RECTIFIER DIODE VF < 1V @ 30A * 'fsm = 950A VR RM800 to 1600V RRM Description/Features The 60EPS. rectifier SAFE/Rsexies has been optimized for very low forward voltage drop, with moderate leakage.
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OCR Scan
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60EPS.
VRR07/97
S5452
QQ3Q21S
O-247AC
0D3G21b
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10ets08s
Abstract: 40EPS12 diode datasheet bridge rectifier 200a 40eps12 10ETS16S 40eps08 60A bridge rectifier 60eps16 10ETS08 20ETS08
Text: SAFEIR Series 8-80A, 800-1600V Rectifier Diodes in package D-Pak, D 2 Pak, TO-220 & TO-247 IF AVG 8A 10A 10A 20A Voltage Grade D-Pak D2-Pak TO-220AC D2-Pak 800 8EWS08S 10ETS08S 10ETS08 20ETS08S 1.1V 1.1V 20A 30A 40A 60A 80A Package Style Half Bridge 1200
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00-1600V
O-220
O-247
O-220AC
8EWS08S
10ETS08S
10ETS08
20ETS08S
8EWS12S
10ETS12S
10ets08s
40EPS12 diode datasheet
bridge rectifier 200a
40eps12
10ETS16S
40eps08
60A bridge rectifier
60eps16
10ETS08
20ETS08
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60EPS08
Abstract: 60EPS12 60EPS16
Text: Bulletin I2122 rev. A 07/97 SAFEIR Series 60EPS. INPUT RECTIFIER DIODE VF < 1V @ 30A IFSM = 950A VRRM 800 to 1600V Description/Features The 60EPS. rectifierSAFEIRseries has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150° C junction temperature.
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I2122
60EPS.
O-247AC
60EPS08
60EPS12
60EPS16
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8EWS125
Abstract: 30DPS08 3004 20ets16 0/8EWS125
Text: !rj'f6N An oN /»xa£crfiEi Diodes SAFE//? Series 8-80A, 800-1600V Rectifier Diodes in package D-Pak, D 2 Pak, TO-220 & TO-247 îF 8A AVG; Package Style 10A 10A 20A 20A ir % « 30A Half-Bridge TO-247 3p»ns 40A 60A 1» Voltage Grade D-Pak D2-Pak T 0 2 2 0A C
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OCR Scan
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00-1600V
O-220
O-247
8EWS08S
10ETS08S
10ETS08
20ETSD8S
10ETS12
O-220AC
20ETS08
8EWS125
30DPS08
3004
20ets16
0/8EWS125
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PDF
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3 phase IGBT inverter
Abstract: igbt 150v 30a SMD DIODE BOOK 30N120D1 igbt 1600V 45A 40a 400v to-247 1600v 30A to247
Text: DATA BOOK BOOK 2000 1998 DATA New Products Check out the following new products for leading edge performance in Power Semiconductors: PRODUCT TYPES DESCRIPTION PART NUMBER Highest Current FETS and IGBTs in TO-247 Outline HiPerFET and IGBT switches in our PLUS247 ,
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O-247
PLUS247TM,
120N20
26N50,
5A/1600V
0A/600V
30-06AR)
000V/20A
3 phase IGBT inverter
igbt 150v 30a
SMD DIODE BOOK
30N120D1
igbt 1600V 45A
40a 400v to-247
1600v 30A to247
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transistor 12n60c
Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design
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ISOPLUS247TM
ISOPLUS247TM
PLUS247TM-package
FBO16-08N
FBE22-06N1
21-05QC
22-08N
75-01F
21-08i01
transistor 12n60c
12N60c equivalent
30N120D1
13N50 equivalent
12n60c
MOSFET 1200v 30a
MOSFET 1000v 30a
30n120d
CS20-22MOF1
12N60c MOSFET
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scr 8a 200v
Abstract: do213ab 50A 1200V SCR 5A 200V SCR die SCR 30A 100V USD635C 1n4436 US60A eh12a 1N1183
Text: Product Guide Power Semiconductors Microsemi more than solutions - enabling possibilities R TM Microsemi Power Semiconductors Contents Selection Military Qualified
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394hex
450sq.
678hex
scr 8a 200v
do213ab
50A 1200V SCR
5A 200V SCR die
SCR 30A 100V
USD635C
1n4436
US60A
eh12a
1N1183
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triac mw 131 600d
Abstract: 65n06
Text: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717
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h30r1602
Abstract: IHY30N160R2 h30r160 PG-TO247HC-3
Text: IHY30N160R2 Soft Switching Series TrenchStop Reverse Conducting RC- IGBT with monolithic body diode Features: • Powerful monolithic body diode with very low forward voltage • Body diode clamps negative voltages • Trench and fieldstop technology offers:
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IHY30N160R2
O-247HC
h30r1602
IHY30N160R2
h30r160
PG-TO247HC-3
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h30r1602
Abstract: "h30r1602" h30r1602 by IHY30N160R2 igbt 1600V 20A igbt 1000v 30a igbt 600V 30A H30R1
Text: IHY30N160R2 Soft Switching Series TrenchStop Reverse Conducting RC- IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V applications offers :
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IHY30N160R2
O247HC
h30r1602
"h30r1602"
h30r1602 by
IHY30N160R2
igbt 1600V 20A
igbt 1000v 30a
igbt 600V 30A
H30R1
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Untitled
Abstract: No abstract text available
Text: 60EPS RECTIFIER DIODE Reverse Voltage: Forward Current: 800 to 1600V 60A Features z z z Circuit z z Low Leakage Current Low Forward Voltage 150°C Operating Junction Temperature Case Style TO-247AC RoHS Compliance Applications ● Input rectification Module Type
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60EPS
O-247AC
60EPS08
60EPS12
60EPS16
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60EPS08
Abstract: 60EPS12 60EPS16
Text: 2002-02-20 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-239-48 60EPS08 diodTO-247 70-239-55 60EPS12 diodTO-247 Bulletin I2122 rev. A 07/97 SAFEIR Series 60EPS. INPUT RECTIFIER DIODE
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60EPS08
diodTO-247
60EPS12
I2122
60EPS.
availabl17)
O-247AC
60EPS16
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Untitled
Abstract: No abstract text available
Text: Bulletin I2122 rev. B 01/05 SAFEIR Series 60EPS. INPUT RECTIFIER DIODE VF < 1.07V @ 60A IFSM = 950A VRRM = 800 to 1600V Description/ Features The 60EPS. rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage.
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60EPS.
O-247AC
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IXYS CORPORATION
Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
Text: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS
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DMA10P1600PZ
/1600V)
CMA50E1600TZ
DSP45-16TZ
O-263
D-68623
CH-2555
IXYS CORPORATION
MTI85W100GC
CLB30I1200HB
200WX75GD
Thyristor 12kV 10 kA
MTI200WX75GD
AGT ssr
up/MTI85W100GC
MTI relay
CMA30E1600PZ
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P035H
Abstract: 30TPS 30TPS16
Text: Bulletin I2181 11/04 SAFEIR Series 30TPS16PbF PHASE CONTROL SCR VT < 1.3V @ 20A Lead-Free "PbF" suffix ITSM = 300A VRRM= 1600V Description/ Features The 30TPS16PbF SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has
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I2181
30TPS16PbF
30TPS16PbF
O-247
P035H
30TPS
30TPS16
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Untitled
Abstract: No abstract text available
Text: Bulletin I2181 11/04 SAFEIR Series 30TPS16PbF PHASE CONTROL SCR VT < 1.3V @ 20A Lead-Free "PbF" suffix ITSM = 300A VRRM= 1600V Description/ Features The 30TPS16PbF SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has
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I2181
30TPS16PbF
30TPS16PbF
08-Mar-07
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30TPS
Abstract: 30TPS16 P035H
Text: Bulletin I2181 11/04 SAFEIR Series 30TPS16PbF PHASE CONTROL SCR VT < 1.3V @ 20A Lead-Free "PbF" suffix ITSM = 300A VRRM= 1600V Description/ Features The 30TPS16PbF SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has
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I2181
30TPS16PbF
30TPS16PbF
12-Mar-07
30TPS
30TPS16
P035H
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PDF
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2kW flyback PFC
Abstract: transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter
Text: Semiconductor Group – find us at an office near you AUS Siemens Ltd., Head Office 544 Church Street Richmond Melbourne , Vic. 3121 ట (+61) 3-9420 7111 Fax (+61) 3-9420 72 75 Email: mark.walsh@siemens.com.au D Siemens AG Von-der-Tann-Straße 30 D-90439 Nürnberg
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D-90439
D-70499
D-81679
B-1060
N60S5
O-220
OT-223
2kW flyback PFC
transistor SMD DK -RN
SMPS flyback 2kW
UPS SIEMENS
UMAX 450W SMPS
smps 450W
2kw mosfet
PFC 5kw
P-CHANNEL 25A TO-247 POWER MOSFET
siemens soft starter
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PDF
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BERULUB FR 16 B
Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
Text: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power
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IXBH40N160,
BERULUB FR 16 B
circuit diagram of 5kw smps full bridge
thyristor aeg
UC3854 5kw
harmer simmons
BERULUB FR 16
Grease Berulub FR 16
Berulub FR 66
5kw smps pfc
ups PURE SINE WAVE schematic diagram
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RJK03P7DPA
Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position
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0000-A
PAE-AA-12-0177-1
PAE-AA-12-0049-1
RJK03P7DPA
NP109N055PUJ
rjh60d7bdpq
rjh60t04
rjp65t43
NP75N04YUG
NP60N055MUK
NP109N04PUK
RJU6052SDPD-E0
PS2761B-1
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