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    16 BIT STATIC RAM Search Results

    16 BIT STATIC RAM Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    6167LA100DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    6167LA70DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation

    16 BIT STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC244

    Abstract: M5M51016BTP A-1540 a1540 A7423
    Text: 9 9 JulJul ,1997 ,1997 MITSUBISHI LSIs LSIs MITSUBISHI M5M51016BTP,RT-10VL, M5M51016BTP,RT-10VL, -10VLL -10VLL 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM


    Original     		PDF M5M51016BTP RT-10VL, -10VLL 1048576-BIT 65536-WORD 16-BIT BC244 A-1540 a1540 A7423

    ph44

    Abstract: 71V016 IDT71V016
    Text: IDT71V016 3.3V CMOS STATIC RAM 1 MEG 64K x 16-BIT  COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71V016 3.3V CMOS STATIC RAM 1 MEG (64K x 16-BIT) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM


    Original     		PDF IDT71V016 16-BIT) 15/20/25ns 44-pin IDT71V016 576-bit ph44 71V016

    IDT71016

    Abstract: No abstract text available
    Text: IDT71016 CMOS STATIC RAM 1 MEG 64K x 16-BIT  COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71016 CMOS STATIC RAM 1 MEG (64K x 16-BIT) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times


    Original     		PDF IDT71016 16-BIT) 15/20/25ns 44-pin IDT71016 576-bit

    71V016

    Abstract: datasheet for 64K RAM ph44 IDT71V016
    Text: IDT71V016 3.3V CMOS STATIC RAM 1 MEG 64K x 16-BIT COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71V016 3.3V CMOS STATIC RAM 1 MEG (64K x 16-BIT) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times


    Original     		PDF IDT71V016 16-BIT) 15/20/25ns 44-pin IDT71V016 576-bit 200mV 71V016 datasheet for 64K RAM ph44

    M5M51016BTP

    Abstract: RT-12VL RT-12VLL
    Text: 9 Jul ,1997 MITSUBISHI MITSUBISHI LSIs LSIs M5M51016BTP,RT-12VL, -12VLL 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION Power supply current M5M51016BTP,RT-12VL M5M51016BTP,RT-12VLL Access time


    Original     		PDF M5M51016BTP RT-12VL, -12VLL 1048576-BIT 65536-WORD 16-BIT RT-12VL RT-12VLL

    a1540

    Abstract: M5M51016BTP RT-10VL-I
    Text: 99Jul Jul,1997 ,1997 MITSUBISHI LSIs M5M51016BTP,RT-10VL-I, -10VLL-I 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION Power supply current M5M51016BTP,RT-10VL M5M51016BTP,RT-10VLL Access time (max)


    Original     		PDF 99Jul M5M51016BTP RT-10VL-I, -10VLL-I 1048576-BIT 65536-WORD 16-BIT a1540 RT-10VL-I

    M5M51016BTP

    Abstract: RT-70L mitsubishi m5m510
    Text: 99Jul Jul,1997 ,1997 MITSUBISHI MITSUBISHI LSIs LSIs M5M51016BTP,RT-70L,-10L, -70LL,-10LL 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION FEATURES PIN CONFIGURATION (TOP VIEW) ADDRESS INPUTS M5M51016BTP,RT-70L


    Original     		PDF 99Jul M5M51016BTP RT-70L -70LL -10LL 1048576-BIT 65536-WORD 16-BIT mitsubishi m5m510

    M5M5W817KT

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs 2002.9.3 Ver. 0.0 M5M5W817KT - 70HI 8388608-BIT 524288-WORD BY 16-BIT / 10485776-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5W817KT is a f amily of low v oltage 8Mbit static RAMs organized as 524288-words by 16-bit / 1048576-words by 8-bit,


    Original     		PDF M5M5W817KT 8388608-BIT 524288-WORD 16-BIT 10485776-WORD 524288-words 1048576-words

    44-PIN

    Abstract: LH5PV16256
    Text: LH5PV16256 CMOS 4M 256K x 16 Pseudo-Static RAM FEATURES DESCRIPTION • 262,144 words × 16 bit organization The LH5PV16256 is a 4M bit Pseudo-Static RAM with a 262,144 words × 16 bit organization. • Power supply: +3.0 ± 0.15 V • Access time: 120 ns (MAX.)


    Original     		PDF LH5PV16256 LH5PV16256 44-PIN I/O15 I/O14 I/O13 I/O12 I/O11 I/O10 44TSOP

    TC55W800FT

    Abstract: TC55W800FT-55 DSA0069634 TSOP48-P-1220-0
    Text: TC55W800FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W800FT is a 8,388,608-bit static random access memory SRAM organized as 524,288 words by 16


    Original     		PDF TC55W800FT-55 288-WORD 16-BIT/1 576-WORD TC55W800FT 608-bit DSA0069634 TSOP48-P-1220-0

    TC55W1600FT

    Abstract: TC55W1600FT-55
    Text: TC55W1600FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W1600FT is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words by 16


    Original     		PDF TC55W1600FT-55 576-WORD 16-BIT/2 152-WORD TC55W1600FT 216-bit

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY7C1061G/CY7C1061GE 16-Mbit 1 M words x 16 bit Static RAM with Error-Correcting Code (ECC) 16-Mbit (1 M words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features To access devices with a single chip enable input, assert the chip


    Original     		PDF CY7C1061G/CY7C1061GE 16-Mbit ns/15 90-mA 20-mA

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY7C1061G/CY7C1061GE 16-Mbit 1 M words x 16 bit Static RAM with Error-Correcting Code (ECC) 16-Mbit (1 M words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features To access devices with a single chip enable input, assert the chip


    Original     		PDF CY7C1061G/CY7C1061GE 16-Mbit ns/15 90-mA 20-mA

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs 2002.5.28 Ver. 1.0 M5M5J167KT - 70HI 16777216-BIT 1048576-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION FEATURES The M5M5J167KT is a f amily of low v oltage 16Mbit static RAMs organized as 1048576-words by 16-bit, f abricated by Mitsubishi's


    Original     		PDF M5M5J167KT 16777216-BIT 1048576-WORD 16-BIT) 16Mbit 1048576-words 16-bit,

    TC55W800FT

    Abstract: TC55W800FT-55
    Text: TC55W800FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W800FT is a 8,388,608-bit static random access memory SRAM organized as 524,288 words by 16


    Original     		PDF TC55W800FT-55 288-WORD 16-BIT/1 576-WORD TC55W800FT 608-bit

    1m x 16 memory module

    Abstract: No abstract text available
    Text: 4 Megabit 256K x 16-bit Static RAM Module LMM4016 DESCRIPTION FEATURES □ 4 Megabit (256K x 16-bit) Static RAM Module □ Utilizes 16 L7C197 256K x 1 Static RAMs □ Advanced CMOS Technology □ High Speed, Low Power Consumption □ TTL Compatible Inputs and


    OCR Scan     		PDF 16-bit) LMM4016 L7C197, LMM4016 L7C197 48-pin 1m x 16 memory module

    8M624

    Abstract: No abstract text available
    Text: 1 MEGABIT 64K x 16-BIT & 512K (32K x 16-BIT) CM O S STATIC RAM M ODULE IDT8M624S IDT8M612S FEATURES: DESCRIPTION: • High-density 1024K/512K-bit CMOS static RAM module The IDT8M624S/IDT8M612S are 1024K/512K-bit high-speed CMOS static RAMs constructed on a multi-layered ceramicsubstrate using four IDT71256 32K x 8 static RAMs (IDT8M624S) or


    OCR Scan     		PDF 16-BIT) IDT8M624S IDT8M612S 1024K/512K-bit IDT8M624S/IDT8M612S IDT71256 IDT8M624S) 8M624

    4016 static ram

    Abstract: TTL COMPATIBLE 4016
    Text: LOGIC DEVICES INC ELE D m SSÌaSTQS QG012Q5 =1 • _ 4 Megabit 256K x 16-bit Static RAM Module FEATURES □ 4 Megabit (256K x 16-bit) Static RAM Module □ Utilizes 16 L7C197 256K x 1 Static RAMs Q Advanced CMOS Technology Q High Speed, Low Power


    OCR Scan     		PDF QG012Q5 16-bit) L7C197 1DT7M4016 48-pin LMM4Q16 256Kx LMM4016 4016 static ram TTL COMPATIBLE 4016

    IDT7164

    Abstract: No abstract text available
    Text: 256K 16K x 16-BIT & 128K (8Kx 16-BIT) CMOS STATIC RAM PLASTIC SIP MODULES IDT 8MP656S IDT 8MP628S FEATURES: DESCRIPTION: • High-density 256K/128K CMOS static RAM modules The IDT8MP656S/IDT8MP628S are 256K/128K-bit high-speed CMOS static RAMs constructed on an epoxy laminate substrate


    OCR Scan     		PDF 16-BIT) 256K/128K IDT8MP656S) IDT8MP628) 8MP656S 8MP628S IDT8MP656S/IDT8MP628S 256K/128K-bit IDT7164

    MCM6323ATS-12

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6323A Product Preview 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM The MCM6323A is a 1,048,576 bit static random access memory organized as 65,536 words of 16 bits. Static design eliminates the need for external clocks


    OCR Scan     		PDF MCM6323A MCM6323A 44-Lead MCM6323AYJ10 MCM6323AYJ10R MCM6323ATS10 MCM6323ATS10R SCM6323AYJ10A MCM6323ATS-12

    65536-WORD

    Abstract: No abstract text available
    Text: MITSUBISHI LSlS .«AVI*'' M5M51016ATP.RT-10VL,-1OVLL p H . •»oW- ,ar0 .»tal'1 > «'"' ^ " 1048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016ATP, RT are a 1048576-bit CMOS static RAM organized as 65536-word by 16-bit which are fabricated using


    OCR Scan     		PDF 1016A 1048576-BIT 65536-WORD 16-BIT) M5M51016ATP, 1048576-bit 16-bit 44-pin

    44256 dram

    Abstract: 44256 44256 ram dram 44256
    Text: MITSUBISHI LSIs MH25616PNA-10,-12 4194304-BIT 262144-W0RD BY 16-BIT PSEUDO-PSEUDO STATIC RAM DESCRIPTION The MH25616PNA is 262144 word x 16 bit PSEUDOPSEUDO static RAM and consist of four industry standard 256K x 4 bit dynamic RAMs in SOJ, two data selector in


    OCR Scan     		PDF MH25616PNA-10 4194304-BIT 262144-W0RD 16-BIT MH25616PNA MH25616PNA 262144-WORD 44256 dram 44256 44256 ram dram 44256

    bc2AT

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M5M51016BTP,RT-70L,-10L, -70LL,-10LL 1048576-BIT 65536-WQRD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of


    OCR Scan     		PDF M5M51016BTP RT-70L -70LL -10LL 1048576-BIT 65536-WQRD 16-BIT M5M51016BTP, bc2AT

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M5M51016ATP,RT-70L,-85L,-10L, -70LL,-85LL,-1 OLL 1048576-BIT 65536-WORD BY 16-BIT CM0S STATIC RAM DESCRIPTION The M5M51016ATP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16 - bit which are fabricated using high-performance triple polysilicon CMOS


    OCR Scan     		PDF M5M51016ATP RT-70L -70LL -85LL 1048576-BIT 65536-WORD 16-BIT M5M51016ATP,