BC244
Abstract: M5M51016BTP A-1540 a1540 A7423
Text: 9 9 JulJul ,1997 ,1997 MITSUBISHI LSIs LSIs MITSUBISHI M5M51016BTP,RT-10VL, M5M51016BTP,RT-10VL, -10VLL -10VLL 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM
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M5M51016BTP
RT-10VL,
-10VLL
1048576-BIT
65536-WORD
16-BIT
BC244
A-1540
a1540
A7423
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ph44
Abstract: 71V016 IDT71V016
Text: IDT71V016 3.3V CMOS STATIC RAM 1 MEG 64K x 16-BIT COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71V016 3.3V CMOS STATIC RAM 1 MEG (64K x 16-BIT) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM
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IDT71V016
16-BIT)
15/20/25ns
44-pin
IDT71V016
576-bit
ph44
71V016
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IDT71016
Abstract: No abstract text available
Text: IDT71016 CMOS STATIC RAM 1 MEG 64K x 16-BIT COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71016 CMOS STATIC RAM 1 MEG (64K x 16-BIT) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times
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IDT71016
16-BIT)
15/20/25ns
44-pin
IDT71016
576-bit
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71V016
Abstract: datasheet for 64K RAM ph44 IDT71V016
Text: IDT71V016 3.3V CMOS STATIC RAM 1 MEG 64K x 16-BIT COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71V016 3.3V CMOS STATIC RAM 1 MEG (64K x 16-BIT) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times
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IDT71V016
16-BIT)
15/20/25ns
44-pin
IDT71V016
576-bit
200mV
71V016
datasheet for 64K RAM
ph44
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M5M51016BTP
Abstract: RT-12VL RT-12VLL
Text: 9 Jul ,1997 MITSUBISHI MITSUBISHI LSIs LSIs M5M51016BTP,RT-12VL, -12VLL 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION Power supply current M5M51016BTP,RT-12VL M5M51016BTP,RT-12VLL Access time
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M5M51016BTP
RT-12VL,
-12VLL
1048576-BIT
65536-WORD
16-BIT
RT-12VL
RT-12VLL
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a1540
Abstract: M5M51016BTP RT-10VL-I
Text: 99Jul Jul,1997 ,1997 MITSUBISHI LSIs M5M51016BTP,RT-10VL-I, -10VLL-I 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION Power supply current M5M51016BTP,RT-10VL M5M51016BTP,RT-10VLL Access time (max)
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99Jul
M5M51016BTP
RT-10VL-I,
-10VLL-I
1048576-BIT
65536-WORD
16-BIT
a1540
RT-10VL-I
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M5M51016BTP
Abstract: RT-70L mitsubishi m5m510
Text: 99Jul Jul,1997 ,1997 MITSUBISHI MITSUBISHI LSIs LSIs M5M51016BTP,RT-70L,-10L, -70LL,-10LL 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION FEATURES PIN CONFIGURATION (TOP VIEW) ADDRESS INPUTS M5M51016BTP,RT-70L
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99Jul
M5M51016BTP
RT-70L
-70LL
-10LL
1048576-BIT
65536-WORD
16-BIT
mitsubishi m5m510
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M5M5W817KT
Abstract: No abstract text available
Text: MITSUBISHI LSIs 2002.9.3 Ver. 0.0 M5M5W817KT - 70HI 8388608-BIT 524288-WORD BY 16-BIT / 10485776-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5W817KT is a f amily of low v oltage 8Mbit static RAMs organized as 524288-words by 16-bit / 1048576-words by 8-bit,
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M5M5W817KT
8388608-BIT
524288-WORD
16-BIT
10485776-WORD
524288-words
1048576-words
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44-PIN
Abstract: LH5PV16256
Text: LH5PV16256 CMOS 4M 256K x 16 Pseudo-Static RAM FEATURES DESCRIPTION • 262,144 words × 16 bit organization The LH5PV16256 is a 4M bit Pseudo-Static RAM with a 262,144 words × 16 bit organization. • Power supply: +3.0 ± 0.15 V • Access time: 120 ns (MAX.)
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LH5PV16256
LH5PV16256
44-PIN
I/O15
I/O14
I/O13
I/O12
I/O11
I/O10
44TSOP
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TC55W800FT
Abstract: TC55W800FT-55 DSA0069634 TSOP48-P-1220-0
Text: TC55W800FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W800FT is a 8,388,608-bit static random access memory SRAM organized as 524,288 words by 16
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TC55W800FT-55
288-WORD
16-BIT/1
576-WORD
TC55W800FT
608-bit
DSA0069634
TSOP48-P-1220-0
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TC55W1600FT
Abstract: TC55W1600FT-55
Text: TC55W1600FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W1600FT is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words by 16
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TC55W1600FT-55
576-WORD
16-BIT/2
152-WORD
TC55W1600FT
216-bit
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CY7C1061G/CY7C1061GE 16-Mbit 1 M words x 16 bit Static RAM with Error-Correcting Code (ECC) 16-Mbit (1 M words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features To access devices with a single chip enable input, assert the chip
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CY7C1061G/CY7C1061GE
16-Mbit
ns/15
90-mA
20-mA
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CY7C1061G/CY7C1061GE 16-Mbit 1 M words x 16 bit Static RAM with Error-Correcting Code (ECC) 16-Mbit (1 M words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features To access devices with a single chip enable input, assert the chip
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CY7C1061G/CY7C1061GE
16-Mbit
ns/15
90-mA
20-mA
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs 2002.5.28 Ver. 1.0 M5M5J167KT - 70HI 16777216-BIT 1048576-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION FEATURES The M5M5J167KT is a f amily of low v oltage 16Mbit static RAMs organized as 1048576-words by 16-bit, f abricated by Mitsubishi's
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M5M5J167KT
16777216-BIT
1048576-WORD
16-BIT)
16Mbit
1048576-words
16-bit,
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TC55W800FT
Abstract: TC55W800FT-55
Text: TC55W800FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W800FT is a 8,388,608-bit static random access memory SRAM organized as 524,288 words by 16
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TC55W800FT-55
288-WORD
16-BIT/1
576-WORD
TC55W800FT
608-bit
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1m x 16 memory module
Abstract: No abstract text available
Text: 4 Megabit 256K x 16-bit Static RAM Module LMM4016 DESCRIPTION FEATURES □ 4 Megabit (256K x 16-bit) Static RAM Module □ Utilizes 16 L7C197 256K x 1 Static RAMs □ Advanced CMOS Technology □ High Speed, Low Power Consumption □ TTL Compatible Inputs and
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16-bit)
LMM4016
L7C197,
LMM4016
L7C197
48-pin
1m x 16 memory module
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8M624
Abstract: No abstract text available
Text: 1 MEGABIT 64K x 16-BIT & 512K (32K x 16-BIT) CM O S STATIC RAM M ODULE IDT8M624S IDT8M612S FEATURES: DESCRIPTION: • High-density 1024K/512K-bit CMOS static RAM module The IDT8M624S/IDT8M612S are 1024K/512K-bit high-speed CMOS static RAMs constructed on a multi-layered ceramicsubstrate using four IDT71256 32K x 8 static RAMs (IDT8M624S) or
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16-BIT)
IDT8M624S
IDT8M612S
1024K/512K-bit
IDT8M624S/IDT8M612S
IDT71256
IDT8M624S)
8M624
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4016 static ram
Abstract: TTL COMPATIBLE 4016
Text: LOGIC DEVICES INC ELE D m SSÌaSTQS QG012Q5 =1 • _ 4 Megabit 256K x 16-bit Static RAM Module FEATURES □ 4 Megabit (256K x 16-bit) Static RAM Module □ Utilizes 16 L7C197 256K x 1 Static RAMs Q Advanced CMOS Technology Q High Speed, Low Power
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QG012Q5
16-bit)
L7C197
1DT7M4016
48-pin
LMM4Q16
256Kx
LMM4016
4016 static ram
TTL COMPATIBLE 4016
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IDT7164
Abstract: No abstract text available
Text: 256K 16K x 16-BIT & 128K (8Kx 16-BIT) CMOS STATIC RAM PLASTIC SIP MODULES IDT 8MP656S IDT 8MP628S FEATURES: DESCRIPTION: • High-density 256K/128K CMOS static RAM modules The IDT8MP656S/IDT8MP628S are 256K/128K-bit high-speed CMOS static RAMs constructed on an epoxy laminate substrate
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16-BIT)
256K/128K
IDT8MP656S)
IDT8MP628)
8MP656S
8MP628S
IDT8MP656S/IDT8MP628S
256K/128K-bit
IDT7164
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MCM6323ATS-12
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6323A Product Preview 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM The MCM6323A is a 1,048,576 bit static random access memory organized as 65,536 words of 16 bits. Static design eliminates the need for external clocks
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MCM6323A
MCM6323A
44-Lead
MCM6323AYJ10
MCM6323AYJ10R
MCM6323ATS10
MCM6323ATS10R
SCM6323AYJ10A
MCM6323ATS-12
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65536-WORD
Abstract: No abstract text available
Text: MITSUBISHI LSlS .«AVI*'' M5M51016ATP.RT-10VL,-1OVLL p H . •»oW- ,ar0 .»tal'1 > «'"' ^ " 1048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016ATP, RT are a 1048576-bit CMOS static RAM organized as 65536-word by 16-bit which are fabricated using
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1016A
1048576-BIT
65536-WORD
16-BIT)
M5M51016ATP,
1048576-bit
16-bit
44-pin
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44256 dram
Abstract: 44256 44256 ram dram 44256
Text: MITSUBISHI LSIs MH25616PNA-10,-12 4194304-BIT 262144-W0RD BY 16-BIT PSEUDO-PSEUDO STATIC RAM DESCRIPTION The MH25616PNA is 262144 word x 16 bit PSEUDOPSEUDO static RAM and consist of four industry standard 256K x 4 bit dynamic RAMs in SOJ, two data selector in
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MH25616PNA-10
4194304-BIT
262144-W0RD
16-BIT
MH25616PNA
MH25616PNA
262144-WORD
44256 dram
44256
44256 ram
dram 44256
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bc2AT
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M51016BTP,RT-70L,-10L, -70LL,-10LL 1048576-BIT 65536-WQRD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of
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M5M51016BTP
RT-70L
-70LL
-10LL
1048576-BIT
65536-WQRD
16-BIT
M5M51016BTP,
bc2AT
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M51016ATP,RT-70L,-85L,-10L, -70LL,-85LL,-1 OLL 1048576-BIT 65536-WORD BY 16-BIT CM0S STATIC RAM DESCRIPTION The M5M51016ATP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16 - bit which are fabricated using high-performance triple polysilicon CMOS
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OCR Scan
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M5M51016ATP
RT-70L
-70LL
-85LL
1048576-BIT
65536-WORD
16-BIT
M5M51016ATP,
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