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    SOP 8 200MIL

    Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
    Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with


    Original     		PDF D-85622 REJ01C0001-0100Z SOP 8 200MIL serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash

    Untitled

    Abstract: No abstract text available
    Text: K7Q323684M K7Q321884M 1Mx36 & 2Mx18 Preliminary b4 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September 5, 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.


    Original     		PDF K7Q323684M K7Q321884M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit K7Q3236

    Untitled

    Abstract: No abstract text available
    Text: K7Q323682M K7Q321882M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September, 5 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.


    Original     		PDF K7Q323682M K7Q321882M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit

    JTAG 10P

    Abstract: K7R641882M-FC25 K7R640982M-FC25 K7R643682M-FC20
    Text: K7R643682M K7R641882M K7R640982M Preliminary 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM Document Title 2Mx36-bit, 4Mx18-bit, 8Mx9-bit QDRTM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Sep, 14 2002 Advance 0.1 1. Update AC timing characteristics.


    Original     		PDF K7R643682M K7R641882M K7R640982M 2Mx36 4Mx18 2Mx36-bit, 4Mx18-bit, K7R640982M JTAG 10P K7R641882M-FC25 K7R640982M-FC25 K7R643682M-FC20

    Untitled

    Abstract: No abstract text available
    Text: K7R323682M K7R321882M K7R320982M K7R320882M 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDR TM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001 Advance 0.1


    Original     		PDF K7R323682M K7R321882M K7R320982M K7R320882M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit,

    K7R643684

    Abstract: No abstract text available
    Text: K7R643684M K7R641884M 2Mx36 & 4Mx18 QDRTM II b4 SRAM 72Mb M-die QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7R643684M K7R641884M 2Mx36 4Mx18 11x15 K7R643684

    Untitled

    Abstract: No abstract text available
    Text: K7I643682M K7I641882M 2Mx36 & 4Mx18 DDRII CIO b2 SRAM 72Mb DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7I643682M K7I641882M 2Mx36 4Mx18 11x15

    Untitled

    Abstract: No abstract text available
    Text: K7Q323652M K7Q321852M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Sep. 5. 2001 Advance 0.1 1. Reserved pin for high density name change from NC to Vss/SA


    Original     		PDF K7Q323652M K7Q321852M 1Mx36-bit, 2Mx18-bit 1Mx36 2Mx18 -20part

    Untitled

    Abstract: No abstract text available
    Text: K7I323684C K7I321884C Preliminary 1Mx36 & 2Mx18 DDRII CIO b4 SRAM 36Mb DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7I323684C K7I321884C 1Mx36 2Mx18 11x15

    Untitled

    Abstract: No abstract text available
    Text: K7J643682M K7J641882M Preliminary 2Mx36 & 4Mx18 DDR II SIO b2 SRAM Document Title 2Mx36-bit, 4Mx18-bit DDR II SIO b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Mar. 9, 2003 Advance 0.1 1. Correct the JTAG ID register definition


    Original     		PDF K7J643682M K7J641882M 2Mx36 4Mx18 2Mx36-bit, 4Mx18-bit

    Untitled

    Abstract: No abstract text available
    Text: Samsung Samsung Secret Secret SAMSUNG QDRII+/DDRII+ 16Mb C-die Specification Change Notice July, 2008 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng.


    Original     		PDF K7K1636T2C K7K1618T2C 512Kx36 K7S1636T4C K7S1618T4C 1Mx18 11x15

    Untitled

    Abstract: No abstract text available
    Text: K7Q323654M K7Q321854M 1Mx36 & 2Mx18 Preliminary b4 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Sep. 5, 2001 Advance 0.1 1. Reserved pin for high density name change from NC to Vss/SA


    Original     		PDF K7Q323654M K7Q321854M 1Mx36-bit, 2Mx18-bit 1Mx36 2Mx18 -20part

    Untitled

    Abstract: No abstract text available
    Text: Preliminary K7I643682M K7I641882M 2Mx36 & 4Mx18 DDRII CIO b2 SRAM Document Title 2Mx36-bit, 4Mx18-bit DDRII CIO b2 SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Mar. 9, 2003 Advance 0.1 1. Correct the JTAG ID register definition


    Original     		PDF K7I643682M K7I641882M 2Mx36-bit, 4Mx18-bit 2Mx36 4Mx18

    Untitled

    Abstract: No abstract text available
    Text: K7Q323682M K7Q321882M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Sep, 5 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.


    Original     		PDF K7Q323682M K7Q321882M 1Mx36-bit, 2Mx18-bit 1Mx36 2Mx18 -20part

    IS61NLF204836B

    Abstract: No abstract text available
    Text: IS61NLF204836B/IS61NVF/NVVF204836B IS61NLF409618B/IS61NVF/NVVF409618B 2M x 36 and 4M x 18 72Mb, FLOW THROUGH 'NO WAIT' STATE BUS SRAM ADVANCED INFORMATION FEBRUARY 2013 FEATURES DESCRIPTION • 100 percent bus utilization The 72 Meg product family features high-speed, low-power


    Original     		PDF IS61NLF204836B/IS61NVF/NVVF204836B IS61NLF409618B/IS61NVF/NVVF409618B 100-pin 119-ball 165ball 4836B/IS61NVF/NVVF204836B IS61NLF204836B

    Untitled

    Abstract: No abstract text available
    Text: Datasheet R1Q4A4436RBG, R1Q4A4418RBG 144-Mbit DDR II SRAM 2-word Burst R10DS0146EJ0101 Rev.1.01 Nov 18, 2013 Description The R1Q4A4436RBG is a 4,194,304-word by 36-bit and the R1Q4A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor


    Original     		PDF R1Q4A4436RBG, R1Q4A4418RBG 144-Mbit R10DS0146EJ0101 R1Q4A4436RBG 304-word 36-bit R1Q4A4418RBG 608-word 18-bit

    Untitled

    Abstract: No abstract text available
    Text: Datasheet R1QLA4436RBG, R1QLA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.0 Cycle Read latency with ODT R10DS0144EJ0100 Rev.1.00 Nov 01, 2013 Description The R1QLA4436RBG is a 4,194,304-word by 36-bit and the R1QLA4418RBG is a 8,388,608-word by 18-bit


    Original     		PDF R1QLA4436RBG, R1QLA4418RBG 144-Mbit R10DS0144EJ0100 R1QLA4436RBG 304-word 36-bit R1QLA4418RBG 608-word 18-bit

    K7I641882M

    Abstract: K7I643682M
    Text: K7I643682M K7I641882M 2Mx36 & 4Mx18 DDRII CIO b2 SRAM 72Mb DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7I643682M K7I641882M 2Mx36 4Mx18 11x15 K7I641882M K7I643682M

    K7K1636U

    Abstract: No abstract text available
    Text: K7K1636U2C K7K1618U2C 512Kx36 & 1Mx18 DDRII+ CIO b2 SRAM 18Mb DDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7K1636U2C K7K1618U2C 512Kx36 1Mx18 11x15 K7K1636U

    Untitled

    Abstract: No abstract text available
    Text: K7J323682M K7J321882M K7J320882M Preliminary 1Mx36 & 2Mx18 & 4Mx8 DDR II SIO b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDR II SIO b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. July, 15 200 1 Advance 0.1 1. 2. 3. 4.


    Original     		PDF K7J323682M K7J321882M K7J320882M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit,

    D0-35

    Abstract: K7J321882M K7J321882M-FC16 K7J321882M-FC20 K7J321882M-FC25 K7J323682M K7J323682M-FC16 K7J323682M-FC20 K7J323682M-FC25 7P JTAG
    Text: K7J323682M K7J321882M 1Mx36 & 2Mx18 DDR II SIO b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit DDR II SIO b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. July, 15 2001 Advance 0.1 1. Pin name change from DLL to Doff 2. Update JTAG test conditions.


    Original     		PDF K7J323682M K7J321882M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit D0-35 K7J321882M K7J321882M-FC16 K7J321882M-FC20 K7J321882M-FC25 K7J323682M K7J323682M-FC16 K7J323682M-FC20 K7J323682M-FC25 7P JTAG

    Untitled

    Abstract: No abstract text available
    Text: Datasheet R1QEA4436RBG, R1QEA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.5 Cycle Read latency with ODT R10DS0142EJ0100 Rev.1.00 Oct 21, 2013 Description The R1QEA4436RBG is a 4,194,304-word by 36-bit and the R1QEA4418RBG is a 8,388,608-word by 18-bit


    Original     		PDF R1QEA4436RBG, R1QEA4418RBG 144-Mbit R10DS0142EJ0100 R1QEA4436RBG 304-word 36-bit R1QEA4418RBG 608-word 18-bit

    Untitled

    Abstract: No abstract text available
    Text: Datasheet R1QHA4436RBG,R1QHA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.0 Cycle Read latency R10DS0145EJ0100 Rev.1.00 Nov 01, 2013 Description The R1QHA4436RBG is a 4,194,304-word by 36-bit and the R1QHA4418RBG is a 8,388,608-word by 18-bit


    Original     		PDF R1QHA4436RBG R1QHA4418RBG 144-Mbit R10DS0145EJ0100 304-word 36-bit R1QHA4418RBG 608-word 18-bit

    Untitled

    Abstract: No abstract text available
    Text: K7K1636T2C K7K1618T2C 512Kx36 & 1Mx18 DDRII+ CIO b2 SRAM 18Mb DDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7K1636T2C K7K1618T2C 512Kx36 1Mx18 11x15