PVD150-12
Abstract: dc 3phase ac inverter circuit 15KW 15KW igbt 200 A 1200 V thyristor 15KW thyristor inverter
Text: TENTATIVE PIM MODULE PVD150PVD150-12 15KW 400V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 15kw 400V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage
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PVD150PVD150-12
PVD150-12
dc 3phase ac inverter circuit
15KW
15KW igbt 200 A 1200 V
thyristor 15KW
thyristor inverter
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SOT-227 lead frame
Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic
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MIL-PRF-19500,
sO-268
O-220
O-220
O-247
O-264
OT-227
SOT-227 lead frame
5kw smps full bridge S.M.P.S
PLAD15KP
APT10026L2FLLG
5kw SMPS full bridge
Fast Recovery Rectifiers mx gp 043
SMBx6.0A
DO215AA
PFC 1.5kw
1.5ke series
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PDM5001
Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH
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C3557
PH1503
PH150
PDM5001
PDT400N16
pah60n8cm
PHMB50E6CL
PHT250N16
PHT400N16
PD100KN16
PAH100N8CM
PT76S16
PAT400N16
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TLP250 MOSFET DRIVER application note
Abstract: TLP250 MOSFET DRIVER calculation of IGBT snubber 74hc06 tlp250 equivalent TLP250 igbt driver applications TLP250 application note difference between IGBT and MOSFET IN inverter SCR 207A scr driver ic for rectifier 3 phase
Text: CONTENTS POWER DEVICES and IGBT 2 Variation of NIEC’s IGBT Modules 4 Ratings and Characteristics 6 Power Loss and Thermal Design 10 Gate Drive 20 High Side Drive 24 3-Phase Bridge Inverter 26 Short circuit and Over-voltage Protection 30 Snubber 33 Parallel Operation
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00A/600V
00A/1200V
TLP250 MOSFET DRIVER application note
TLP250 MOSFET DRIVER
calculation of IGBT snubber
74hc06
tlp250 equivalent
TLP250 igbt driver applications
TLP250 application note
difference between IGBT and MOSFET IN inverter
SCR 207A
scr driver ic for rectifier 3 phase
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PM75RSE120
Abstract: snubber capacitor
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75RSE120 PM75RSE120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75RSE120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.
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PM75RSE120
15kHz
11/15kW
PM75RSE120
snubber capacitor
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3rd Generation of 1200V IGBT Modules
Abstract: PM75RSD120
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75RSD120 PM75RSD120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75RSD120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.
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PM75RSD120
15kHz
3rd Generation of 1200V IGBT Modules
PM75RSD120
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PM75CSE120
Abstract: No abstract text available
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CSE120 PM75CSE120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CSE120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.
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PM75CSE120
15kHz
11/15kW
PM75CSE120
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75RSE120 PM75RSE120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75RSE120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.
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PM75RSE120
15kHz
11/15kW
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PM75RSE120
Abstract: E80276
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75RSE120 PM75RSE120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75RSE120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.
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PM75RSE120
15kHz
11/15kW
PM75RSE120
E80276
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E80276
Abstract: PM75RLA120
Text: 三菱半導体〈インテリジェントパワーモジュール〉 PM75RLA120 フラットベース形 絶縁形 PM75RLA120 特長 ➀ 第 5 世代 1µm ルール IGBT（CSTBT）チッ プ採用 Vce sat (@Tj=125℃)=typ.1.9V ➁ CSTBTチップのTj検出による過熱保護を
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PM75RLA120
1200V75A
11kW/15kW
E80276
E80271
19-s0
PM75RLA120
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PM75RLB120
Abstract: E80276
Text: 三菱半導体〈インテリジェントパワーモジュール〉 PM75RLB120 フラットベース形 絶縁形 PM75RLB120 特長 ➀ 第 5 世代 1µm ルール IGBT（CSTBT）チッ プ採用 Vce sat (@Tj=125℃)=typ.1.9V ➁ CSTBTチップのTj検出による過熱保護を
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PM75RLB120
1200V75A
11kW/15kW
E80276
E80271
19-s0
PM75RLB120
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PM75CSD120
Abstract: No abstract text available
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CSD120 PM75CSD120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CSD120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.
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PM75CSD120
15kHz
PM75CSD120
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75RSD120 PM75RSD120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75RSD120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.
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PM75RSD120
15kHz
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PM75RSD120
Abstract: E80276
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75RSD120 PM75RSD120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75RSD120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.
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PM75RSD120
15kHz
PM75RSD120
E80276
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PM75CSE120
Abstract: E80276
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CSE120 PM75CSE120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CSE120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.
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PM75CSE120
15kHz
11/15kW
E80276
E80271
PM75CSE120
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DIN 72 585
Abstract: dh24d1 teledyne relay sth24d25
Text: Switching Solutions Teledyne Relays has been providing industrial power solid-state relays for over 40 years. The company offers a broad range of products, from standard off-the-shelf single-, dual-, three- and quad-output relays to custom products with diagnostics and phase monitoring. These
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TR0513
DIN 72 585
dh24d1
teledyne relay sth24d25
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LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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95A sensor hall
Abstract: celduc d31c2110 d31c2110 sensor hall 95A HALL 95A D41A3100L 95A magnetic sensor IGBT ac switch in SSR swt kw 11 7 1 16a 250vac ac SYNCHRONOUS MOTOR WIRING
Text: Selection Guide REED RELAYS AND SWITCHES MAGNETIC SENSORS SOLID STATE RELAYS IV E ED We are pleased to present the third version of our short form catalogue. The last 3 years have seen a dramatic growth in customers in a diverse range of industries, allowing us to demonstrate high quality, innovative design techniques incorporated in many of the new products shown in this catalogue.
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PM75CLA120
Abstract: E80276 PM75CLA
Text: 三菱半導体〈インテリジェントパワーモジュール〉 PM75CLA120 フラットベース形 絶縁形 PM75CLA120 特長 ➀ 第 5 世代 1µm ルール IGBT（CSTBT）チッ プ採用 Vce sat (@Tj=125℃)=typ.1.9V ➁ CSTBTチップのTj検出による過熱保護を
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PM75CLA120
1200V75A
11kW/15kW
E80276
E80271
19-s0
PM75CLA120
PM75CLA
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CSD120 PM75CSD120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CSD120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.
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PM75CSD120
15kHz
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pm75csd120
Abstract: resistores E80276 PM75C
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CSD120 PM75CSD120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CSD120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.
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PM75CSD120
15kHz
pm75csd120
resistores
E80276
PM75C
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CF 775
Abstract: E80276 PM75CLB120
Text: 三菱半導体〈インテリジェントパワーモジュール〉 PM75CLB120 フラットベース形 絶縁形 PM75CLB120 特長 ➀ 第 5 世代 1µm ルール IGBT（CSTBT）チッ プ採用 Vce sat (@Tj=125℃)=typ.1.9V ➁ CSTBTチップのTj検出による過熱保護を
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PM75CLB120
1200V75A
11kW/15kW
E80276
E80271
19-s0
CF 775
PM75CLB120
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LA 4825
Abstract: No abstract text available
Text: 目次 各種パワーデバイスとIGBT 2 IGBTモジュール回路構成 4 IGBTモジュール定格と特性 6 IGBTモジュール損失と放熱 10 IGBTモジュールのゲート ドライブ 20 ハイサイドのドライブ 24 3相ブリッジインバータ
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74hc06
Abstract: TLP250 IGBT 10KHz IR2171 ptmb50e6c igbt rcd SCR 207A 50A 1200V SCR SCR 100A 1200V Equivalent for SCR 207A
Text: 目录 各种功率半导体器件和IGBT IGBT模块电路构成 IGBT模块的额定值和特性 IGBT模块的损耗和散热设计 IGBT模块的门极驱动 上桥臂的驱动 3相供电VVVF变频器系统框图 IGBT元件的短路和过电压保护 IGBT元件的过电压保护缓冲电路
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PHMB400B12
PDMB100B12C
1/2LiC21/2Cse2
600V1
200A1
200V800AIGBT3
100kWIGBT
200A1200V800A
74hc06
TLP250
IGBT 10KHz
IR2171
ptmb50e6c
igbt rcd
SCR 207A
50A 1200V SCR
SCR 100A 1200V
Equivalent for SCR 207A
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