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    15JUN2001 Search Results

    15JUN2001 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    M58BW016xB

    Abstract: M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80
    Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PE4FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


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    M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 100ns 56MHz PQFP80 M58BW016B LBGA80 M58BW016xB M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80 PDF

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)


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    M58BW016DB M58BW016DT 512Kb 56MHz PDF

    la 7913

    Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 00005H
    Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)


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    M58BW016DB M58BW016DT 512Kb 56MHz la 7913 JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 00005H PDF

    Q002

    Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 13-May-2003 tbhk M58BW016DB7 8835h
    Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


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    M58BW016DB M58BW016DT 512Kb 56MHz Q002 JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 13-May-2003 tbhk M58BW016DB7 8835h PDF

    M58BW016BB

    Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80
    Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PE4FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


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    M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 100ns 56MHz PQFP80 M58BW016B LBGA80 M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80 PDF

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


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    M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


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    M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz PDF

    M58BW016

    Abstract: Q002 M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Features • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


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    M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz PQFP80 M58BW016 Q002 M58BW016DT M58BW016FB PQFP80 PDF

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)


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    M58BW016DB M58BW016DT M58BW016FT M58BW016FB PQFP80 PDF

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)


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    M58BW016DB M58BW016DT M58BW016FT M58BW016FB PDF

    Untitled

    Abstract: No abstract text available
    Text: M27W512 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V – 80ns at VCC = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C512 ■ LOW POWER CONSUMPTION: – 15µA max Standby Current


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    M27W512 M27C512 FDIP28W PDIP28 200mA PLCC32 TSOP28 M27W512 PDF

    M58BW016BB

    Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80 m58bw016xb
    Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


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    M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 100ns 56MHz PQFP80 M58BW016B LBGA80 M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80 m58bw016xb PDF

    Untitled

    Abstract: No abstract text available
    Text: M27W512 512 Kbit 64 Kbit x8 low-voltage OTP EPROM Features • 2.7 to 3.6 V supply voltage in read operation ■ Access time: 100 ns ■ Pin compatibility with M27C512 ■ Low power consumption – 15 µA max Standby current – 15 mA max Active current at 5 MHz


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    M27W512 M27C512 PLCC32 PDF

    M58BW016

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)


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    M58BW016DB M58BW016DT M58BW016FT M58BW016FB M58BW016 PDF

    PLCC32

    Abstract: J-STD-020B M27C512 M27W512 PDIP28 11PROGRAMMING
    Text: M27W512 512 Kbit 64K x8 Low Voltage UV EPROM and OTP EPROM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ 2.7 to 3.6V SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: – 70ns at VCC = 3.0 to 3.6V – 80ns at VCC = 2.7 to 3.6V PIN COMPATIBLE with M27C512


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    M27W512 M27C512 200mA FDIP28W PDIP28 PLCC32 TSOP28 PLCC32 J-STD-020B M27C512 M27W512 PDIP28 11PROGRAMMING PDF

    1N914

    Abstract: M27C512 M27W512 PLCC32 M27C512 ST
    Text: M27W512 512 Kbit 64 Kbit x8 low-voltage OTP EPROM Features • 2.7 to 3.6 V supply voltage in read operation ■ Access time: 100 ns ■ Pin compatibility with M27C512 ■ Low power consumption – 15 µA max Standby current – 15 mA max Active current at 5 MHz


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    M27W512 M27C512 PLCC32 1N914 M27C512 M27W512 PLCC32 M27C512 ST PDF

    Q002

    Abstract: M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80 56MHZ M58BW016
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)


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    M58BW016DB M58BW016DT M58BW016FT M58BW016FB PQFP80 Q002 M58BW016DT M58BW016FB PQFP80 56MHZ M58BW016 PDF

    Q002

    Abstract: M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)


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    M58BW016DB M58BW016DT M58BW016FT M58BW016FB PQFP80 Q002 M58BW016DT M58BW016FB PQFP80 PDF

    TSOP28 memory

    Abstract: JESD97 M27C512 M27W512 PLCC32
    Text: M27W512 512 Kbit 64K x8 low voltage UV EPROM and OTP EPROM Features • 2.7 to 3.6 V supply voltage in read operation ■ Access time – 70 ns at VCC = 3.0 to 3.6 V – 80 ns at VCC = 2.7 to 3.6 V ■ Pin compatibility with M27C512 ■ Low power consumption


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    M27W512 M27C512 200mA PLCC32 TSOP28 TSOP28 memory JESD97 M27C512 M27W512 PLCC32 PDF

    M58BW016BB

    Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80
    Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


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    M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 56MHz PQFP80 M58BW016B LBGA80 M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80 PDF

    M27C512

    Abstract: M27W512 PDIP28 PLCC32
    Text: M27W512 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V – 80ns at VCC = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C512 ■ LOW POWER CONSUMPTION: – 15µA max Standby Current


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    M27W512 M27C512 FDIP28W PDIP28 200mA PLCC32 TSOP28 M27W512 M27C512 PDIP28 PLCC32 PDF

    M58BW016BB

    Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80
    Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


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    M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 56MHz PQFP80 M58BW016B LBGA80 M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80 PDF

    m58bw016xb

    Abstract: A2762 M58BW016
    Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


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    M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 56MHz PQFP80 M58BW016B LBGA80 m58bw016xb A2762 M58BW016 PDF

    1437720-3

    Abstract: No abstract text available
    Text: CO P Y RI G HT 20 00 R E L E A S E D FOR P U B L I C A T I O N FREI FUER VEROEFFENTLICHUNG ALL RIGHTS RESERVED. B Y T Y C O E L E C T R O N I C S C O R P O R A T I O N ALLE RECHTE VORBEHALTEN - W E D WI T H : FASSEND ZU: 2000 LOC RE V I S I ONS D I ST A P


    OCR Scan
    EGLPC01017 EG00-0870-01 15JUN2001 T01-0599-PP03-G 1-0599-PP03-E T01-0599-PP03-A T01-0599-PP03-F 1437720-3 PDF