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    Oupiin 7936-15FMB1A

    CONN D-SUB PLUG/RCPT 15P RA SLDR
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    DigiKey 7936-15FMB1A Tray 1
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    PUI 7936-15FMB1A 154 20 Weeks 224
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    Master Electronics 7936-15FMB1A
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    Vishay Dale RWR84SR715FMBSL

    RES 0.715 OHM 7W 1% WW AXIAL
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    Vishay Dale RLR07C1R15FMBSL

    RES 1.15 OHM 1% 1/4W AXIAL
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    Vishay Dale RWR81S2R15FMB12

    RES 2.15 OHM 1W 1% WW AXIAL
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    DigiKey RWR81S2R15FMB12 Bulk 100
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    Vishay Dale RLR07C2R15FMB14

    RES 2.15 OHM 1% 1/4W AXIAL
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    DigiKey RLR07C2R15FMB14 Bulk 100
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    15FMB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P4C150

    Abstract: No abstract text available
    Text: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM FEATURES Separate Input and Output Ports Full CMOS, 6T Cell Three-State Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Fully TTL Compatible Inputs and Outputs


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    PDF P4C150 24-Pin 28-Pin P4C150 096-bit requires300 SRAM105

    P4C147

    Abstract: No abstract text available
    Text: P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Single 5V ± 10% Power Supply High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Separate Input and Output Ports Three-State Outputs


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    PDF P4C147 SRAM103 SRAM103 P4C147 Oct-05

    P4C168

    Abstract: P4C169 P4C170
    Text: P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Three Options


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    PDF P4C168, P4C169, P4C170 12/15/20/25/35ns 20/25/35/45/55/70ns P4C168 P4C169 P4C170 P4C168

    Untitled

    Abstract: No abstract text available
    Text: P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Single 5V ± 10% Power Supply High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Separate Input and Output Ports Three-State Outputs


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    PDF P4C147 SRAM103 SRAM103 P4C147 Oct-05

    Untitled

    Abstract: No abstract text available
    Text: P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Three Options


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    PDF P4C168, P4C169, P4C170 12/15/20/25/35ns 20/25/35/45/55/70ns P4C168 P4C168 P4C169

    Untitled

    Abstract: No abstract text available
    Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)


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    PDF P4C164 P4C164L 28-Pin 100ns) 536-bit

    Untitled

    Abstract: No abstract text available
    Text: P4C164 REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: SRAM115 P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS REV. ISSUE DATE ORIG. OF CHANGE OR 1997 DAB New Data Sheet A Oct-05 JDB Change logo to Pyramid B Jun-06 JDB Added 28-pin ceramic DIP C Aug-06 JDB Added Lead Free Designation


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    PDF P4C164 Oct-05 Jun-06 Aug-06 SRAM115 P4C164 28-pin SRAM115

    Untitled

    Abstract: No abstract text available
    Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)


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    PDF P4C164 P4C164L 28-Pin 100ns) P4C164 536-bit

    100DM

    Abstract: 1519B P4C164 P4C164L
    Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


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    PDF P4C164 28-Pin 100ns) 32-Pin 100DM 1519B P4C164 P4C164L

    Untitled

    Abstract: No abstract text available
    Text: FT6168, FT6169, FT6170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (FT6168 Military) Three Options


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    PDF FT6168, FT6169, FT6170 12/15/20/25/35ns 20/25/35/45/55/70ns FT6168 FT6168 FT6169

    24-Pin Plastic DIP

    Abstract: P4C147 P4C150
    Text: P4C150 P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM FEATURES Single 5V ± 10% Power Supply Full CMOS, 6T Cell Separate Input and Output Ports High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military)


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    PDF P4C150 24-Pin 28-Pin P4C150 096-bit 15DMB 15LMB 24-Pin Plastic DIP P4C147

    Untitled

    Abstract: No abstract text available
    Text: FT7C168, FT7C169, FT7C170 HIGH SPEED 4K x 4 SRAM FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (FT7C168 Military) Three Options – FT7C168 Low Power Standby Mode


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    PDF FT7C168, FT7C169, FT7C170 12/15/20/25/35ns 20/25/35/45/55/70ns FT7C168 FT7C168 FT7C169

    Untitled

    Abstract: No abstract text available
    Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


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    PDF P4C164 P4C164L 28-Pin 100ns)

    Untitled

    Abstract: No abstract text available
    Text: P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Single 5V ± 10% Power Supply High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Separate Input and Output Ports Three-State Outputs


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    PDF P4C147 096-bit P4C147

    Untitled

    Abstract: No abstract text available
    Text: P4C1981/1981L, P4C1982/1982L REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: SRAM114 P4C1981 / P4C198L, P4C1982 / P4C1982L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS REV. ISSUE DATE ORIG. OF CHANGE OR 1997 DAB New Data Sheet A Oct-05 JDB Change logo to Pyramid B


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    PDF P4C1981/1981L, P4C1982/1982L Oct-05 Aug-06 SRAM114 P4C1981 P4C198L, P4C1982 P4C1982L SRAM114

    Untitled

    Abstract: No abstract text available
    Text: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM FEATURES Separate Input and Output Ports Full CMOS, 6T Cell Three-State Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Fully TTL Compatible Inputs and Outputs


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    PDF P4C150 24-Pin 28-Pin 096-bit P4C150

    Untitled

    Abstract: No abstract text available
    Text: P4C168/P4C168L , P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 Static CMOS RAMs FEATURES Full CMOS, 6T Cell High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Low Power Operation (Commercial) – 715 mW Active


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    PDF P4C168/P4C168L P4C169, P4C170 12/15/20/25/35ns 20/25/35/45/55/70ns P4C168 P4C168 P4C169

    P4C1981

    Abstract: P4C198 P4C1981L P4C1982L
    Text: P4C1981/P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current P4C1981L/1982L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)


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    PDF P4C1981/P4C1981L, P4C1982/P4C1982L P4C1981L/1982L P4C1981/L P4C1982/L 28-Pin SRAM114 P4C1981/1981L, P4C1981 P4C198 P4C1981L P4C1982L

    1519B

    Abstract: P4C164 P4C164L
    Text: P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Single 5V±10% Power Supply High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45 ns (Military)


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    PDF P4C164/P4C164L P4C164L 770mW P4C164L 28-Pin 100ns) P4C164/164L 1519B P4C164

    FT28C256

    Abstract: dmb A5
    Text: Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation • • • • • • • • • • – Internal Address and Data Latches for 64 Bytes – Internal Control Timer Fast Write Cycle Times – Page Write Cycle Time: 3 ms or 10 ms Maximum


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    PDF 64-byte FT28C256 dmb A5

    FT6168

    Abstract: FT6170
    Text: FT6168, FT6169, FT6170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (FT6168 Military) Three Options


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    PDF FT6168, FT6169, FT6170 12/15/20/25/35ns 20/25/35/45/55/70ns FT6168 FT6169 FT6170 FT6168

    Untitled

    Abstract: No abstract text available
    Text: P4C168/P4C168L , P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 Static CMOS RAMs FEATURES Full CMOS, 6T Cell High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Low Power Operation (Commercial) – 715 mW Active


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    PDF P4C168/P4C168L P4C169, P4C170 12/15/20/25/35ns 20/25/35/45/55/70ns P4C168 P4C168 P4C169

    Untitled

    Abstract: No abstract text available
    Text: P4C422 HIGH SPEED 256 x 4 STATIC CMOS RAM FEATURES Separate I/O High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Fully TTL Compatible Inputs and Outputs Resistant to single event upset and latchup


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    PDF P4C422 22-pin 24-pin 024-bit P4C422

    24-Pin Plastic DIP

    Abstract: P4C422
    Text: P4C422 P4C422 ULTRA HIGH SPEED 256 x 4 STATIC CMOS RAM FEATURES Separate I/O High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25 /35 ns (Military) Fully TTL Compatible Inputs and Outputs Resistant to single event upset and latchup


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    PDF P4C422 22-pin 24-pin P4C422 024-bit and4C422 -10PC 24-Pin Plastic DIP