SA452
Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this
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Am29LV2562M
S29GL512N
S29GL512N
SA452
SA336
SA424
120R
SA487
EE8000
a78000a7ffff
c58000c5ffff
SA4871
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JS28F512M29
Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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M29EW
256-Mbit,
512-Mbit,
x8/x16,
100ns
512-word
14MB/s)
Kbytes/64
PC28F00AM29EWHA
11-Apr-2011
JS28F512M29
js28f256m29
js28f256
JS28F512
pc28f00am29ew
JS28F00AM29EW
pc28f00am29
js28f00
PC28F00AM29EWHA
JS28F256M29EWL
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Spansion S29GL512N11
Abstract: No abstract text available
Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages
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S29GLxxxN
S29GL512N,
S29GL256N,
S29GL128N
128-word/256-byte
8-word/16-byte
S29GLxxxN
27631sb2
Spansion S29GL512N11
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asme SA388
Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ
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S29GL-M
S29GL256MS29GL128MS29GL064MS29GL032M
S29GL128MS29GL128N
S29GL256MS29GL256N
S29GLxxxN
00-B-5
S29GL032M
LAA064
asme SA388
gl128m
A2113
S29GL256
E78000
S29GL128N
TSOP56 S29GL128N
sa32sa35
S29GLxxxM
BGA-63
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120R
Abstract: C8800
Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV2562M
120R
C8800
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EN25QH
Abstract: 1AEF00 cFeon* SPI Flash
Text: EN25QH256 EN25QH256 256 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Single power supply operation - Full voltage range: 2.7-3.6 volt • Serial Interface Architecture - SPI Compatible: Mode 0 and Mode 3 • 256 M-bit Serial Flash - 256 M-bit/32,768 K-byte/131,072 pages
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EN25QH256
M-bit/32
K-byte/131
80MHz
50MHz
EN25QH
1AEF00
cFeon* SPI Flash
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l256mh113
Abstract: L256ML123R
Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV256M
l256mh113
L256ML123R
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Untitled
Abstract: No abstract text available
Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,
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S29GL-N
S29GL512N,
S29GL256N,
S29GL128N
S29GL-N
S29GL128P,
S29GL256P,
S29GL512P
S29GL128N,
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L256MH113R
Abstract: L256ML113R
Text: Am29LV256M Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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Am29LV256M
L256MH113R
L256ML113R
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Untitled
Abstract: No abstract text available
Text: S29NS-P MirrorBit Flash Family S29NS512P, S29NS256P, S29NS128P 512/256/128 Mb 32/16/8 M x 16 bit , 1.8V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory Data Sheet S29NS-P MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29NS-P
S29NS512P,
S29NS256P,
S29NS128P
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a22t
Abstract: S19G S29GL-N
Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications
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S29GL-N
S29GL512N,
S29GL256N,
S29GL128N
a22t
S19G
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S29GL-N
Abstract: 1E300
Text: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this
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S29GL512/256/128N
S29GL512N,
S29GL256N,
S29GL128N
S29GL-N
1E300
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7be0
Abstract: No abstract text available
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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M29EW
256-Mbit,
512-Mbit,
x8/x16,
100ns
512-word
48MB/s)
Kbytes/64
7be0
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s29gl032m10tair
Abstract: No abstract text available
Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics
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S29GLxxxM
S29GL256M,
S29GL128M,
S29GL064M,
S29GL032M
32Megabit,
128-word/256-byte
8-word/16-byte
BGA-80P-M02
s29gl032m10tair
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SA293
Abstract: SA273 988000
Text: DATASHEET Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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Am29LV256M
16-Bit/32
16-word/32-byte
56-pi
SA293
SA273
988000
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L256ML
Abstract: SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110
Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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Am29LV256M
16-Bit/32
128-word/256-byte
8-word/16-byte
L256ML
SA4871
BD8000
sa340
transistor SA427
SA370
8A000
740-0007
Am29LV256
SA36-110
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29gl064
Abstract: TSR056 BGA-63 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M TSOP-20 S29GL256M
Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For new and current designs, S29GL032A, S29GL064A, S29GL128N, and S29GL256N supersede S29GL032M,
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S29GL-M
S29GL256M,
S29GL128M,
S29GL064M,
S29GL032M
S29GL032A,
S29GL064A,
S29GL128N,
S29GL256N
S29GL032M,
29gl064
TSR056
BGA-63
S29GL032A
S29GL032M
S29GL064A
S29GL064M
S29GL128M
TSOP-20
S29GL256M
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2B60000
Abstract: S70GL01GN00 S29GL512N gl512 2200-0002
Text: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this document contains information on one or more products under development
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S70GL01GN00
2B60000
S29GL512N
gl512
2200-0002
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER REV. LDS-SM C561 6R I-TR 3,75 [ 0.148 ] 0.80 [ 0.031 ] ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2 5 T PARAMETER MIN PEAK WAVELENGTH lf= 1Q m A MAX 660 FORWARD VOLTAGE REVERSE VOLTAGE TYP 1 .7 2.2 Vf lr = iaOfiA Vr jjcd 15D00
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15D00
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Untitled
Abstract: No abstract text available
Text: PART NUMBER REV. LDD-A81 3 R I-S Y A UNCONTROLLED DOCUMENT 10.00 [ 0 . 3 9 4 ] PIN IB 4 .5 0 C0.177] REV, A PIN 10 25,80 [1,016] E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11149. ELECTRO-OPTICAL CHARACTERISTICS Ta = 25'C 22,00 [0,866] PARAMETER MIN PEAK WAVELENGTH
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LDD-A81
15D00
DECL05URE
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C175
Abstract: 5*7 led dot matrix RB105
Text: UNCONTROLLED DOCUMENT PART NUMBER REV. LDM —21 2 4 7 5 7 N I S I U G B PIN 22 PIN 12 ooop ooooo ooooo ooooo ooooo ooooo ooob 8 .4 0 [0 .3 3 1 ] 5.6 0 [0 .2 2 0 ] H— I— I— I— I— I— I— I— I— I- ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 T PARAMETER
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24757NISIUGB
74DOO
15D00
0U00V00K
50LDERINC
C175
5*7 led dot matrix
RB105
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT H 6.10 [0.24011 PIN E REV, A B 4.50 [0.177] PART NUMBER REV. LDS —C308RI —SO B E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11153 E.C.N. #11193. DATE 7.21.04 12.07.04 PIN 13 19,10 [0 ,7 5 2 ] PIN 6 j~ 2 .5 4 [0.100] <4 PLS. ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 S X
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C308RI
15D00
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SO 417 MN
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT P IN 24 P IN £ 0 0 o 0 o0 J + + + + + + + + 510 13 o + 4 ,5 0 [0 .2 0 1 ] 11,00 [0 ,1 7 7 1 [0 ,4 3 3 ] PART NUM BER REV. LDC — M2 5 0 8 R I— SO A REV, E .C .N . NUM BER A E .C .N , #11149. AND + L J [0 .1 0 0 1 11 P L S . 2 7 ,9 4
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KL25
Abstract: No abstract text available
Text: REV, A 03.00 [00.118] 3 5 PART NUMBER REV. LDM —12357MI —SY A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11149. DATE D3.21.07 P L S . 8,00 [0,315] P IN 4,00 [0,157] P IN 8 14 3 )0 00 + + + + + T ooooo boooo ooooo poooo ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 25'C
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2357MI
590nm
D5CL05URE
50DERINC
KL25
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