ra33h1516m1
Abstract: RA33H1516M1-101 RF MODULE CIRCUIT DIAGRAM trichloroethylene
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to
|
Original
|
PDF
|
RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
RA33H1516M1-101
RF MODULE CIRCUIT DIAGRAM
trichloroethylene
|
genesis gm5020 s video pinout
Abstract: DVI to VGA converter ic FRAME32 genesis lcd controller dram Genesis Microchip osd C5020-DAT-01L
Text: Genesis Microchip Publication DATA SHEET gm5020/gm5020-H Sections in this document and all other related documentation that mention HDCP refer only to the gm5020-H HDCP-enabled chip. All other sections apply to both the gm5020-H chip and the gm5020 (non-HDCP) chip.
|
Original
|
PDF
|
gm5020/gm5020-H
gm5020-H
gm5020-H
gm5020
C5020-DAT-01N
292-pin
C5020-DAT-01N
gm5020/gm5020-H
genesis gm5020 s video pinout
DVI to VGA converter ic
FRAME32
genesis lcd controller dram
Genesis Microchip osd
C5020-DAT-01L
|
samsung crt monitor rgb pinout
Abstract: Genesis Microchip osd C5020-DAT-01I genesis OSD microcontroller vga
Text: PRELIMINARY DATA SHEET gm5020 C5020-DAT-01I March 2001 Genesis Microchip Inc. 165 Commerce Valley Dr. West • Thornhill • ON • Canada L3T 7V8 • Tel: 905 889-5400 • Fax: (905) 889-5422 2150 Gold Street • P.O. Box 2150 • Alviso • CA • USA 95002 • Tel: (408) 262-6599 • Fax: (408) 262-6365
|
Original
|
PDF
|
gm5020
C5020-DAT-01I
gm5020
292-pin
samsung crt monitor rgb pinout
Genesis Microchip osd
C5020-DAT-01I
genesis
OSD microcontroller vga
|
ra33h1516m1
Abstract: RF power amplifier 10mW RF MOSFET MODULE RF MODULE CIRCUIT DIAGRAM for channel 4 MOSFET Amplifier Module v 33w marking transistor RF
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to
|
Original
|
PDF
|
RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
RF power amplifier 10mW
RF MOSFET MODULE
RF MODULE CIRCUIT DIAGRAM for channel 4
MOSFET Amplifier Module
v 33w
marking transistor RF
|
Untitled
Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 162MHz range. The battery can be connected directly to the drain of the
|
Original
|
PDF
|
RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
|
RA33H1516M1
Abstract: RA33H1516M1-101 VDD1015
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to
|
Original
|
PDF
|
RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
RA33H1516M1-101
VDD1015
|
GENESIS gm5010
Abstract: Genesis four Channel genesis
Text: Genesis Microchip Publication DATA SHEET gm5010/gm5010-H Sections in this document and all other related documentation that mention HDCP refer only to the gm5010-H HDCP-enabled chip. All other sections apply to both the gm5010-H chip and the gm5010 (non-HDCP) chip.
|
Original
|
PDF
|
gm5010/gm5010-H
gm5010-H
gm5010-H
gm5010
C5010-DAT-01H
gm5010
208-pin
C5010-DAT-01H
GENESIS gm5010
Genesis four Channel
genesis
|
APXV9R20B-C
Abstract: Andrew dm65b-2x2 IEC-332-1 Andrew DB499-K-896-960 MHz ldf4-50a belden Kathrein Antennas SBNH-1D4545A lmr-400 uf APXV9
Text: Where Technology Meets Innovation Wireless Products Mobile Switching Center Tower Distributed Antenna Systems DAS Mobile Backhaul Antennas and Accessories Coax Cables, Connectors and Support www.kgplogistics.com 800.755.1950 Helping you build the top of the tower from the ground up…
|
Original
|
PDF
|
AD-107860-EN
US07/3791
APXV9R20B-C
Andrew dm65b-2x2
IEC-332-1
Andrew DB499-K-896-960 MHz
ldf4-50a belden
Kathrein Antennas
SBNH-1D4545A
lmr-400 uf
APXV9
|
GENESIS gm5010
Abstract: gm5010 27Mhz sender C5010 sy 166 BT656 Genesis Microchip osd 417-222
Text: PRELIMINARY DATA SHEET gm5010 C5010-DAT-01F July 2001 Genesis Microchip Inc. 165 Commerce Valley Dr. West • Thornhill • ON • Canada L3T 7V8 • Tel: 905 889-5400 • Fax: (905) 889-5422 2150 Gold Street • PO Box 2150 • Alviso • CA • USA 95002 • Tel: (408) 262-6599 • Fax: (408) 262-6365
|
Original
|
PDF
|
gm5010
C5010-DAT-01F
gm5010
C5010-DAT-01A
C5010-DAT-01B
158MHz.
208-pin
158MHz
GENESIS gm5010
27Mhz sender
C5010
sy 166
BT656
Genesis Microchip osd
417-222
|
OA-19
Abstract: CLC406 CLC505 MAX403 OA-13 monolithic amplifier "A"
Text: Application Note OA-19 Wideband Op Amp Capable of µ µPower Operation January 1993 The CLC505 is a current-feedback operational amplifier with an externally-adjustable supply current whose AC performance can be tuned to meet the precise requirements of many high-speed applications. The CLC505 provides a
|
Original
|
PDF
|
OA-19
CLC505
150MHz
50MHz
quiescen737-7018
OA-19
CLC406
MAX403
OA-13
monolithic amplifier "A"
|
Untitled
Abstract: No abstract text available
Text: - Thi s Documentcan notbe used wi thoutSamsung' s authori zati on - 10. PartList 1 Main Board Main Board Location SEC Code Name Specification Quantity B504 3301-000314 BEAD-SMD 120ohm,1.6x0.8x0.8mm,-,-,- 1 B510 3301-000314 BEAD-SMD 120ohm,1.6x0.8x0.8mm,-,-,-
|
Original
|
PDF
|
|
OA-19
Abstract: CLC505 OA-13 CLC406
Text: National Semiconductor OA-19 January 1993 The CLC505 is a current-feedback operational amplifier with an externally-adjustable supply current whose AC performance can be tuned to meet the precise requirements of many high-speed applications. The CLC505 provides a
|
Original
|
PDF
|
OA-19
CLC505
150MHz
50MHz
OA-19
OA-13
CLC406
|
Untitled
Abstract: No abstract text available
Text: ML2611 DATASHEET ML2611 DATASHEET DIGEST Version 0.3.4 Revised on 19 Jun. 07 The SRS technology rights incorporated in the ML2611 are owned by SRS Labs, Inc. a U.S. Corporation and licensed to OKI Electric Industry Co., Ltd., hereafter “OKI”. - When application of purchaser is mobile phone:
|
Original
|
PDF
|
ML2611
ML2611,
|
gm5020
Abstract: genesis gm5020 s video pinout genesis lcd controller
Text: PRELIMINARY DATA SHEET gm5020 C5020-DAT-01J April 2001 Genesis Microchip Inc. 165 Commerce Valley Dr. West • Thornhill • ON • Canada L3T 7V8 • Tel: 905 889-5400 • Fax: (905) 889-5422 2150 Gold Street • PO Box 2150 • Alviso • CA • USA 95002 • Tel: (408) 262-6599 • Fax: (408) 262-6365
|
Original
|
PDF
|
gm5020
C5020-DAT-01J
gm5020
292-pin
genesis gm5020 s video pinout
genesis lcd controller
|
|
|
genesis gm5020 s video pinout
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET C5020-DAT-01H January 2001 Genesis Microchip Inc. 165 Commerce Valley Dr. West, Thornhill, ON Canada L3T 7V8 Tel: 905 889-5400 Fax: (905) 889-5422 2150 Gold Street, Alviso, CA USA 95002 Tel: (408) 262-6599 Fax: (408) 262-6365 4F, No. 24, Ln 123, Sec 6, Min-Chung E. Rd. • Taipei • Taiwan • Tel: (2) 2791-0118 • Fax: (2) 2791-0196
|
Original
|
PDF
|
C5020-DAT-01H
gm5020
C5020-DAT-01H
C5020-DAT-01A
C5020-DAT-01B
C5020-DAT-01C
gm5020
292-pin
genesis gm5020 s video pinout
|
GENESIS gm5010
Abstract: Genesis Microchip osd BOOTSTRAP13
Text: PRELIMINARY DATA SHEET gm5010 C5010-DAT-01C March 2001 Genesis Microchip Inc. 165 Commerce Valley Dr. West • Thornhill • ON • Canada L3T 7V8 • Tel: 905 889-5400 • Fax: (905) 889-5422 2150 Gold Street • PO Box 2150 • Alviso • CA • USA 95002 • Tel: (408) 262-6599 • Fax: (408) 262-6365
|
Original
|
PDF
|
gm5010
C5010-DAT-01C
gm5010
C5010-DAT-01A
C5010-DAT-01B
158MHz.
208-pin
GENESIS gm5010
Genesis Microchip osd
BOOTSTRAP13
|
RF power amplifier 10mW
Abstract: RA33H1516M1 473 marking code transistor
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to
|
Original
|
PDF
|
RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
RF power amplifier 10mW
473 marking code transistor
|
GENESIS gm5010
Abstract: Genesis Microchip osd
Text: PRELIMINARY DATA SHEET gm5010 C5010-DAT-01D April 2001 Genesis Microchip Inc. 165 Commerce Valley Dr. West • Thornhill • ON • Canada L3T 7V8 • Tel: 905 889-5400 • Fax: (905) 889-5422 2150 Gold Street • PO Box 2150 • Alviso • CA • USA 95002 • Tel: (408) 262-6599 • Fax: (408) 262-6365
|
Original
|
PDF
|
gm5010
C5010-DAT-01D
gm5010
C5010-DAT-01A
C5010-DAT-01B
158MHz.
208-pin
GENESIS gm5010
Genesis Microchip osd
|
Untitled
Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 162MHz range. The battery can be connected directly to the drain of the
|
Original
|
PDF
|
RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
Oct2011
|
S-AV35
Abstract: RF power amplifier 10mW RF Power Amplifier Module
Text: S-AV35 TOSHIBA RF POWER AMPLIFIER MODULE S-AV35 ○FM RF POWER AMPLIFIER MODULE for VHF MARINE BAND ･Output Power :32W Min. ･Power Gain :35.0dB (Min.) ･Total Efficiency:50% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION
|
Original
|
PDF
|
S-AV35
S-AV35
RF power amplifier 10mW
RF Power Amplifier Module
|
zarlink modem
Abstract: ZL40162
Text: ZL40162 High Output Current High Speed Dual Operational Amplifier Data Sheet Features • • • • • • • • April 2003 High Output Drive • 18.8 Vpp differential output voltage, RL = 50Ω • 9.4 Vpp single-ended output voltage, RL = 25Ω High Output Current
|
Original
|
PDF
|
ZL40162
200mA
100KHz,
158MHz
zarlink modem
ZL40162
|
RA33H1516M1
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to
|
Original
|
PDF
|
RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
|
Untitled
Abstract: No abstract text available
Text: HARRIS S S E M I C O N D U C T O R H April 1996 I 5 1 2 - B it, H ig h S p e e d D /A 7 3 1 C o n v e rte r Description Features • 100MHz Throughput Rate fiSO W • Low P o w e r. m • 0.75 LSB Integral Linearity Error
|
OCR Scan
|
PDF
|
100MHz
HI5731
12-bit,
HBC-10)
1-800-4-HARRIS
|
M67704
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M67704 1 4 2 — 1 7 5 M H z , 1 2 .5 V , 1 0 W FM M O B ILE RADIO DESCRIPTION M 6 7 7 0 4 is a thick film RF Power module specifically OUTLINE DRAWING designed for 142 ~ 17 5 M H z, 10W FM portable sets. Dimensions in mm 56 ± 1
|
OCR Scan
|
PDF
|
M67704
M67704
|
