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    1550NM PHOTODIODE NEP Search Results

    1550NM PHOTODIODE NEP Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    CSF-5312-20DA-3 Amphenol Communications Solutions 1.25G CSFP 20km 1550nm/1310nm I Temp Visit Amphenol Communications Solutions
    CSF-5312-40DA-3 Amphenol Communications Solutions 1.25G CSFP ER 1550nm/1310nm I Temp Visit Amphenol Communications Solutions
    CSF-5312-20D-3 Amphenol Communications Solutions 1.25G CSFP 20km 1550nm/1310nm C Temp Visit Amphenol Communications Solutions

    1550NM PHOTODIODE NEP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT INFORMATION 1300nm 8C483 1550nm PIN/Preamp Datacom This device contains a PIN photodiode, a low noise GaAS transimpedance amplifier with differential limiting amplifier assembled in a TO-46 package. It is designed for Fibre Channel and Gigabit Ethernet. Its


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    1300nm 8C483 1550nm PDF

    top marking 293

    Abstract: TO46 package LED 1300 nm
    Text: PRODUCT INFORMATION 1300nm 8C443 1550nm PIN/Preamp Datacom, Telecom This device consists of a PIN photodiode and a transimpedance amplifier assembled in a TO-46 package. It is designed for FDDI, ATM and SDH/Sonet up to 155 Mbps. The AGC Automatic Gain Control


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    1300nm 8C443 1550nm top marking 293 TO46 package LED 1300 nm PDF

    8C443

    Abstract: No abstract text available
    Text: PRODUCT INFORMATION 1300nm 8C443 1550nm PIN/Preamp Datacom, Telecom This device consists of a PIN photodiode and a transimpedance amplifier assembled in a TO-46 package. It is designed for FDDI, ATM and SDH/Sonet up to 155 Mbps. The AGC Automatic Gain Control


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    1300nm 8C443 1550nm 8C443 PDF

    ISO-2768-mK

    Abstract: GR468-CORE ZL60007 ISO-2768-m
    Text: ZL60007 1310nm, 1550nm 622Mbps PIN with Preamplifier Data Sheet May 2003 Ordering Information ZL60007/TBD TO-46 with lens -40°C to +85°C Features Description • • • • • This optical receiver is a 3.3V device which contains an InGaAs PIN photodiode and a transimpedance


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    ZL60007 1310nm, 1550nm 622Mbps ZL60007/TBD 622Mbps. GR468-CORE. ISO-2768-mK GR468-CORE ZL60007 ISO-2768-m PDF

    InGaas PIN photodiode, 1550 NEP

    Abstract: ISO 2768-mk PIN Photodiode 1550nm photodiode responsivity 1550nm PIN-TIA GR468-CORE ZL60007 InGaAs photodiode 1310 1550 InGaAs 1550 photodiode transimpedance amplifier P InGaAs photodiode TO-46
    Text: ZL60007 1310nm, 1550nm 622Mbps PIN with Preamplifier Data Sheet May 2003 Ordering Information ZL60007/TBD TO-46 with lens -40°C to +85°C Features Description • • • • • This optical receiver is a 3.3V device which contains an InGaAs PIN photodiode and a transimpedance


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    ZL60007 1310nm, 1550nm 622Mbps ZL60007/TBD 622Mbps. GR468-CORE. InGaas PIN photodiode, 1550 NEP ISO 2768-mk PIN Photodiode 1550nm photodiode responsivity 1550nm PIN-TIA GR468-CORE ZL60007 InGaAs photodiode 1310 1550 InGaAs 1550 photodiode transimpedance amplifier P InGaAs photodiode TO-46 PDF

    8C489

    Abstract: TO46 package
    Text: PRODUCT INFORMATION 1300nm 8C489 1550nm PIN/Preamp E V ATI ENT Datacom This device contains a PIN photodiode and a low noise transimpedance amplifier with Automatic Gain Control AGC assembled in a TO-46 package. It is designed for FDDI, ATM and SDH/Sonet at 155Mbps.


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    1300nm 8C489 1550nm 155Mbps. 90MHz 8C489 TO46 package PDF

    Untitled

    Abstract: No abstract text available
    Text: ZL60007 1310nm, 1550nm 622Mbps PIN with Preamplifier Data Sheet May 2003 Ordering Information ZL60007/TBD TO-46 with lens -40°C to +85°C Features Description • • • • • This optical receiver is a 3.3V device which contains an InGaAs PIN photodiode and a transimpedance


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    ZL60007 1310nm, 1550nm 622Mbps ZL60007/TBD 622Mbps. GR468-CORE. OC-12 622Mblude PDF

    photodiode 1550nm nep

    Abstract: GR468-CORE ZL60007 InGaAs photodiode 1310 1550
    Text: ZL60007 1310nm, 1550nm 622Mbps PIN with Preamplifier Data Sheet May 2003 Ordering Information ZL60007/TBD TO-46 with lens -40°C to +85°C Features Description • • • • • This optical receiver is a 3.3V device which contains an InGaAs PIN photodiode and a transimpedance


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    ZL60007 1310nm, 1550nm 622Mbps ZL60007/TBD 622Mbps. GR468-CORE. photodiode 1550nm nep GR468-CORE ZL60007 InGaAs photodiode 1310 1550 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZL60007 1310nm, 1550nm 622Mbps PIN with Preamplifier Data Sheet April 2003 Ordering Information ZL60007/TBD TO-46 with lens -40°C to +85°C Features Description • • • • • This optical receiver is a 3.3V device which contains an InGaAs PIN photodiode and a transimpedance


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    ZL60007 1310nm, 1550nm 622Mbps ZL60007/TBD 622Mbps. GR468-CORE. OC-12 622lude PDF

    photodiode sensivity 1550nm 2

    Abstract: No abstract text available
    Text: ZL60006 1310nm, 1550nm 2.5Gbps PIN with Preamplifier Data Sheet April 2003 Ordering Information ZL60006/TBD TO-46 with lens -40°C to +85°C Features Description • • • • • • This optical receiver is a 3.3V device which contains a PIN photodiode, a low noise transimpedance amplifier


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    ZL60006 1310nm, 1550nm ZL60006/TBD 125Gbps OC-48 GR-468-CORElude photodiode sensivity 1550nm 2 PDF

    8C447

    Abstract: No abstract text available
    Text: PRODUCT INFORMATION 1300nm 8C447 1550nm PIN/Preamp Datacom, General Purpose, Analog Applications This device consists of a PIN photodiode and a transimpedance amplifier assembled in a TO-46 package. It is designed for short-distance FDDI and ATM up to 155 Mbps. The preamplifier’s linearity and absence of


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    1300nm 8C447 1550nm 8C447 PDF

    8C447

    Abstract: top marking 293
    Text: PRODUCT INFORMATION 1300nm 8C447 1550nm PIN/Preamp Datacom, General Purpose, Analog Applications This device consists of a PIN photodiode and a transimpedance amplifier assembled in a TO-46 package. It is designed for short-distance FDDI and ATM up to 155 Mbps. The preamplifier’s linearity and absence of


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    1300nm 8C447 1550nm 8C447 top marking 293 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZL60009 1310nm, 1550nm 155Mbps PIN with Preamplifier Data Sheet April 2003 Ordering Information ZL60009/TBD TO-46 with lens -40°C to +85°C Features Description • • • • • • This optical receiver is a 3.3V device which contains a PIN photodiode and a low noise transimpedance


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    ZL60009 1310nm, 1550nm 155Mbps ZL60009/TBD 200Mbps GR-468CORE. PDF

    ISO 2768-mk

    Abstract: photodiode 1550nm nep 1300nm-1550nm 1550nm photodiode nep MC2045 ZL60009 04078
    Text: ZL60009 PIN/Preamp 1300nm-1550nm Data Sheet October 2003 Ordering Information ZL60009/TBD TO-46 with lens -40°C to +85°C Description This optical receiver is a 3.3V device which contains a PIN photodiode and a low noise transimpedance amplifier assembled in a TO-46 package. It is designed


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    ZL60009 1300nm-1550nm ZL60009/TBD GR-468CORE. 200Mbps ISO 2768-mk photodiode 1550nm nep 1300nm-1550nm 1550nm photodiode nep MC2045 ZL60009 04078 PDF

    1550nm photodiode nep

    Abstract: photodiode 1550nm nep MC2045 ZL60009
    Text: ZL60009 PIN/Preamp 1300nm-1550nm Data Sheet October 2003 Ordering Information ZL60009/TBD TO-46 with lens -40°C to +85°C Description This optical receiver is a 3.3V device which contains a PIN photodiode and a low noise transimpedance amplifier assembled in a TO-46 package. It is designed


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    ZL60009 1300nm-1550nm ZL60009/TBD GR-468CORE. 200Mbps 1550nm photodiode nep photodiode 1550nm nep MC2045 ZL60009 PDF

    diode d1n914

    Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
    Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP


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    C30659 C30659-900-1060-1550nm 1100nm 1700nm 12-lead C30817com. diode d1n914 d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity PDF

    C30817E

    Abstract: No abstract text available
    Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP


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    C30659 C30659-900-1060-1550nm 1100nm 1700nm 12-lead C30om. C30817E PDF

    photodiode 1550nm nep

    Abstract: No abstract text available
    Text: InGaAs Avalanche Photodiode on TEC, Preamplifier Modules MICROELECTRONICS 264-339759-VAR Description CMC Electronics’ 264-339759 Series are using either a InGaAs APD with an ionization ratio of 0.2 or a Silion APD with an ionization ratio of 0.02. The APD is coupled to a Gasfet input


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    264-339759-VAR 12lead 200um] 200um, Opto759-VAR photodiode 1550nm nep PDF

    J16-18A-R01M-HS

    Abstract: J16-8SP-R05M-HS J16-18A-R01M germanium photodiode
    Text: J ^ E G zG JU D SO N Germanium Detector Operating Notes 0.8 to 1.8 jim 'f§jjpilljf!' Biii 'viflnJP General Responsivity Operating Circuit J16 Series detectors are high-quality G erm anium photodiodes designed for the 800 to 1800 nm w avelength range. The equivalent circuit for a G erm a­


    OCR Scan
    J16TE 3G30bGS 00D03Sb 3030b05 00GG3E7 J16-18A-R01M-HS J16-8SP-R05M-HS J16-18A-R01M germanium photodiode PDF

    FDS010

    Abstract: FDS100 circuit PDA155 FGA10 PDA255 FDS100 THORLABS FGA10 Photodiode 1550nm bandwidth PDA400 PDA55
    Text: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 PH. 973-579-7227 FAX 973-300-3600 FGA10 InGaAs Photodiode -High Responsivity -Low Capacitance: High Speed Electrical Characteristics Spectral Response: Active Diameter: Rise/Fall Time RL=50Ω : Bandwidth (RL=50Ω, -3dB,5V):


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    FGA10 1550nm: 800-1800nm* 100nA 100mW 35/fBW FDS010, FDS100, PDA55, FDS010 FDS100 circuit PDA155 PDA255 FDS100 THORLABS FGA10 Photodiode 1550nm bandwidth PDA400 PDA55 PDF

    GR-468-CORE

    Abstract: STM-16 ZL60006 ZL60006TDD ZL60006TED ISO 2768 mk
    Text: ZL60006 1310nm, 1550nm 2.5Gbps PIN with Preamplifier Data Sheet November 2003 Ordering Information ZL60006TED SC Housing ZL60006/TBD TO-46 with lens ZL60006TDD ST Housing -40°C to +85°C Features Description • • • • • • This optical receiver is a 3.3V device which contains a


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    ZL60006 1310nm, 1550nm ZL60006TED ZL60006/TBD ZL60006TDD OC-48 GR-468-CORE. 125Gbps GR-468-CORE STM-16 ZL60006 ZL60006TED ISO 2768 mk PDF

    D400F

    Abstract: D400FC FGA04 FGA10 photodiode responsivity 1550nm with FC connector photodiode responsivity 1550nm 2 Photodiode 1550nm bandwidth Photodiode, 1550nm NEP THORLABS FGA10 1550nm photodiode 2GHz
    Text: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 PH. 973-579-7227 FAX 973-300-3600 FGA04 InGaAs Photodiode High Responsivity Low Capacitance: High Speed Fiber Compatible with FC Connector Electrical Characteristics Spectral Response: Active Diameter: Rise/Fall Time RL=50Ω :


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    FGA04 1550nm: 800-1700nm 35/fBW 3154-S01 D400FC, FGA10, FGA04 D400F D400FC FGA10 photodiode responsivity 1550nm with FC connector photodiode responsivity 1550nm 2 Photodiode 1550nm bandwidth Photodiode, 1550nm NEP THORLABS FGA10 1550nm photodiode 2GHz PDF

    Zarlink Semiconductor

    Abstract: No abstract text available
    Text: ZL60006 1310nm, 1550nm 2.5Gbps PIN with Preamplifier Data Sheet November 2003 Ordering Information ZL60006TED SC Housing ZL60006/TBD TO-46 with lens ZL60006TDD ST Housing -40°C to +85°C Features Description • • • • • • This optical receiver is a 3.3V device which contains a


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    ZL60006 1310nm, 1550nm ZL60006TED ZL60006/TBD ZL60006TDD 125Gbps OC-48 Zarlink Semiconductor PDF

    J16-18A-R01M-SC

    Abstract: J16-8SP-R05M J16-5SP-R02M-HS J16-5SP-R02M-SC photodiode ge J16-18A-R01M photodiode germanium J16-18A-R01M-HS J16-5SP-R03M-HS germanium diode equivalent
    Text: Germanium Detector Operating Notes 0.8 to 1.8 ¡im General Responsivity Operating Circuit J1 6 S eries d etectors are hig h -q u ality G erm an iu m photodiodes designed for th e 800 to 1800 n m w avelen g th range. T he eq u iv alen t circu it for a G erm a­


    OCR Scan
    J16TE 303Gb05 J16-18A-R01M-SC J16-8SP-R05M J16-5SP-R02M-HS J16-5SP-R02M-SC photodiode ge J16-18A-R01M photodiode germanium J16-18A-R01M-HS J16-5SP-R03M-HS germanium diode equivalent PDF