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    154.24 Search Results

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    154.24 Price and Stock

    Molex 0734154241

    SMP ADAPTER ASSY 50 OHM
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    DigiKey 0734154241 Bag 199 1
    • 1 $19.59
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    Molex 5031542490

    CONN RCPT 24POS 0.059 TIN SMD
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    DigiKey 5031542490 Cut Tape 177 1
    • 1 $3.14
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    5031542490 Digi-Reel 177 1
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    Avnet Abacus 5031542490 Reel 36 Weeks 450
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    5031542490 Reel 34 Weeks 1,350
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    Weidmüller Interface GmbH & Co. KG 1542420000

    RELAY GEN PURPOSE 4PDT 5A 220V
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    DigiKey 1542420000 Box 35 1
    • 1 $22.18
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    1542420000 Box 27 1
    • 1 $10.49
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    TME 1542420000 1
    • 1 $21.59
    • 10 $19.37
    • 100 $16.05
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    Weidmüller Interface GmbH & Co. KG 1542490000

    RELAY GEN PURPOSE DPDT 10A 230V
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    DigiKey 1542490000 Box 24 1
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    1542490000 Box 7 1
    • 1 $6.52
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    TME 1542490000 1
    • 1 $16.41
    • 10 $14.8
    • 100 $12.43
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    Weidmüller Interface GmbH & Co. KG 1542430000

    RELAY GEN PURPOSE 4PDT 5A 24V
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    DigiKey 1542430000 Box 18 1
    • 1 $24.72
    • 10 $21.595
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    1542430000 Box 5 1
    • 1 $8.59
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    TME 1542430000 1
    • 1 $17.83
    • 10 $16
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    154.24 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    154-24 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    154-24 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    154-24 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    154-24 Unknown Vintage Transistor Datasheets Scan PDF
    154-24 Unknown Vintage Transistor Datasheets Scan PDF
    154-24 Westinghouse Silicon Power Transistors 7.5 Amps, 200 Watts Scan PDF
    1542428 Phoenix Contact SENSOR/ACTUATOR CABLE Original PDF
    1542431 Phoenix Contact SENSOR/ACTUATOR CABLE Original PDF
    154-24SPC Unknown Shortform Transistor PDF Datasheet Short Form PDF
    154-24SPC Unknown Shortform Transistor PDF Datasheet Short Form PDF

    154.24 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    14164 1994

    Abstract: ERA-51SM 358-type 419V
    Text: ERA-51SM Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: ERA-51SM Reference Data: RDF-1079D S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER = -20dBm, Icc = 65mA, Vd = 4.44V @Temperature = +25degC


    Original     		PDF ERA-51SM ERA-51SM RDF-1079D -20dBm, 25degC 14164 1994 358-type 419V

    Bond

    Abstract: power amplifier mmic
    Text: FMM5829X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 23 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5829X is a power amplifier MMIC that contains a four


    Original     		PDF FMM5829X 39dBm FMM5829X Bond power amplifier mmic

    Untitled

    Abstract: No abstract text available
    Text: Mini-Circuits - Specification for Voltage Controlled Oscillator - JCOS-ED8174/3 Voltage Controlled Oscillator Notes: • For Surface Mount Environmental Specifications, please click here. Re-flow soldering information is available in "Surface Mount" article.


    Original     		PDF JCOS-ED8174/3

    17081

    Abstract: M 14606
    Text: Mini-Circuits - Specification for Voltage Controlled Oscillator - JCOS-175LN Voltage Controlled Oscillator Notes: • For Surface Mount Environmental Specifications, please click here. Re-flow soldering information is available in "Surface Mount" article.


    Original     		PDF JCOS-175LN 17081 M 14606

    NF 027

    Abstract: 74188 GRM1555C1H101JD01E 126539 LQW15AN68NG00 16116 27549 marking mga x1 55320 74067
    Text: MGA-16116 Dual LNA for Balanced Application 450 – 1450 MHz Data Sheet Description Features Avago Technologies’ MGA-16116 is an ultra low-noise high linearity amplifier pair with built-in active bias and shutdown features for balanced applications in the 900


    Original     		PDF MGA-16116 MGA-16116 16-pin MGA-16216 AV02-3721EN NF 027 74188 GRM1555C1H101JD01E 126539 LQW15AN68NG00 16116 27549 marking mga x1 55320 74067

    Bach

    Abstract: Eudyna Devices X BAND power amplifiers power amplifier 800mA ED-4701 FMM5829X UF 600m power amplifier mmic
    Text: FMM5829X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 23 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5829X is a power amplifier MMIC that contains a four


    Original     		PDF FMM5829X 39dBm FMM5829X 1906B, Bach Eudyna Devices X BAND power amplifiers power amplifier 800mA ED-4701 UF 600m power amplifier mmic

    92256

    Abstract: 44750 7432 truth table 90087
    Text: AlGaAs SPST Non-Reflective PIN Diode Switch MA4AGSW1A Rev 2.0 FEATURES • • • • Ultra Broad Bandwidth: 10 GHz to 50 GHz Functional Bandwidth: 100 MHz to 70 GHz 1.0 dB Insertion Loss, 35 dB Isolation at 50 GHz M/A-COM’s unique patent pending AlGaAs


    Original     		PDF

    transistor 30945

    Abstract: 74228 TRANSISTOR 81242 116-203 TARF1303Z 6012 49570 16-1-330 47377 63732
    Text: Preliminary TARF1303Z NPN Planer RF TRANSISTOR SOT-343 unit : [mm] □ DESCRIPTION The TARF1303Z is a low Noise figure and good associated gain performance at Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT343 package


    Original     		PDF TARF1303Z OT-343 TARF1303Z OT343 22GHz 17GHz 000GHz 200GHz 400GHz 600GHz transistor 30945 74228 TRANSISTOR 81242 116-203 6012 49570 16-1-330 47377 63732

    Untitled

    Abstract: No abstract text available
    Text: K&L Microwave Product Catalog Table of Contents ◆ About K&L Microwave 4 ◆ ◆ Terms & Definitions 8 ◆ Suspended Substrate ◆ Specifying Filters 10 ◆ Topology vs. Frequency Range 14 ◆ Lumped Components 17  K L-fil Ceramic Filters E 71 -Bandpass — SB Series


    Original     		PDF

    IC 7107

    Abstract: 5252 F 1006 C 5763 transistor PT 4962 marking 5241 CRE 6203 ECSP1006-3 EC3H10B current 5241 10419
    Text: Ordering number : ENN7324 EC3H10B NPN Epitaxial Planar Silicon Transistor EC3H10B UHF to S Band Low-Noise Amplifier and OSC Applications Features 1 3 2 0.15 1 1.0 0.05 0.25 Top View 0.05 • [EC3H10B] Bottom View 0.5 0.65 • unit : mm 2183A Marking 2 0.05


    Original     		PDF ENN7324 EC3H10B EC3H10B] S21e2 ECSP1006-3 IC 7107 5252 F 1006 C 5763 transistor PT 4962 marking 5241 CRE 6203 ECSP1006-3 EC3H10B current 5241 10419

    5252 f 0916

    Abstract: 7453 ic ic 7924 5252 F 1006 an 17832 D2502 EC3H11B 7325 5252 0916 transistor t/51511d150/fw/a/buy/5252 f 0916
    Text: Ordering number : ENN7325 EC3H11B NPN Epitaxial Planar Silicon Transistor EC3H11B High-Frequency Low-Noise Amplifier and OSC Applications 0.15 0.15 0.05 1 2 0.25 0.4 0.65 • [EC3H11B] 0.35 0.2 3 0.5 1.0 • Low noise : NF=1.5dB typ f=2GHz . unit : mm High cutoff frequency : fT=6.0GHz typ (VCE=1V). 2183


    Original     		PDF ENN7325 EC3H11B EC3H11B] E-CSP1006-3 5252 f 0916 7453 ic ic 7924 5252 F 1006 an 17832 D2502 EC3H11B 7325 5252 0916 transistor t/51511d150/fw/a/buy/5252 f 0916

    2SC5289

    Abstract: 2SC5192 2SC5288 62629 1.4464 transistor Mu
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF 2SC5289 2SC52891 EIAJSC-61 2SC5289-T1 108-0171NEC 46017NEC 54024NEC 2SC5289 2SC5192 2SC5288 62629 1.4464 transistor Mu

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    transistor a2160

    Abstract: a2324 a2746 a2530
    Text: 50 MHz to 4.0 GHz RF/IF Gain Block ADL5601 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM GND Fixed gain of 15 dB Operation from 50 MHz to 4.0 GHz Highest dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3 of 43.0 dBm at 900 MHz


    Original     		PDF ADL5601 OT-89 ADL5601 O-243 09-12-2013-C PKG-003480 OT-89] ADL5601ARKZ-R7 ADL5601-EVALZ transistor a2160 a2324 a2746 a2530

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SC5289

    Abstract: 2SC5192 2SC5288 2SC5289-T1 83942
    Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.


    Original     		PDF 2SC5289 2SC5289 2SC5192 2SC5288 2SC5289-T1 83942

    JCOS-175LN

    Abstract: No abstract text available
    Text: Surface Mount Voltage Controlled Oscillator Low Noise JCOS-175LN 125 to 175 MHz Features • very low phase noise, -118 dBc/Hz at 10 kHz offset, typ. • excellent tuning sensitivity, 3-5 MHz/V typ. • aqueous washable CASE STYLE: BG419 PRICE: $49.95 ea. QTY 1-9


    Original     		PDF JCOS-175LN BG419 JCOS-175LN

    power amplifier mmic

    Abstract: No abstract text available
    Text: FMM5829X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 23 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION


    Original     		PDF FMM5829X 39dBm FMM5829X power amplifier mmic

    CS3020

    Abstract: cbb22 527-01
    Text: HAMMOND MANUFACTURING CO. LTD. 394 Edinburgh Road North Guelph, Ontario N1H 1E5 Tel: 519 822-2960 Fax: (519) 822-0715 www.hammondmfg.com Manufacturer’s Suggested Canadian Resale Pricing Transformers & Inductors Small Enclosures Outlet Strips Electrical Enclosures


    Original     		PDF 106EE CS3020 cbb22 527-01

    Untitled

    Abstract: No abstract text available
    Text: KSN-915A-119+ Frequency Synthesizer Typical Performance Data FREQ. POWER OUTPUT HARMONICS VCO CURRENT PLL CURENT dBm (dBc) (mA) (mA) (MHz) 885 888 891 894 897 900 903 906 909 912 915 -45ºC +25ºC +85ºC -45ºC F2 +25ºC 0.60 0.60 0.60 0.60 0.61 0.61 0.62


    Original     		PDF KSN-915A-119+ 915MHz±

    5252 F 1006

    Abstract: 5252 F 0915 5252 F 0918 ic 7494 CRE 6203 ic 7492 4504 0227 EC3H10B 73242 ic 7815
    Text: 注文コード No. N 7 3 2 4 EC3H10B 三洋半導体データシート N EC3H10B 特長 NPN エピタキシァルプレーナ型シリコントランジスタ UHF ~ S バンド低雑音増幅 , 発振用 ・低雑音である：NF=1.3dB typ （f=2GHz）


    Original     		PDF EC3H10B S21e2 5252 F 1006 5252 F 0915 5252 F 0918 ic 7494 CRE 6203 ic 7492 4504 0227 EC3H10B 73242 ic 7815

    5252 f 0916

    Abstract: 5252 F 1006 ta 8659 n 5252 F 0914 D2502 EC3H11B ic n 3856 5942 ic 7924 ic 8945
    Text: 注文コード No. N 7 3 2 5 EC3H11B 三洋半導体データシート N EC3H11B 特長 ・低雑音である NPN エピタキシァルプレーナ型シリコントランジスタ 高周波低雑音増幅 , 発振用 ：NF=1.5dB typ （f=2GHz） 。 ・しゃ断周波数が高い：fT=6.0GHz typ


    Original     		PDF EC3H11B 5252 f 0916 5252 F 1006 ta 8659 n 5252 F 0914 D2502 EC3H11B ic n 3856 5942 ic 7924 ic 8945

    C 5763 transistor

    Abstract: 5252 F 0915 5252 F 1006 5252 F 0918 EC3H10B ic 7494 ECSP1006-3 CRE 6203 Applications of IC 8259 1978 Data catalog
    Text: Ordering number : ENN7324 EC3H10B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H10B UHF to S Band Low-Noise Amplifier and OSC Applications Features • • • • • Low noise : NF=1.3dB typ f=2GHz . High gain-bandwidth product


    Original     		PDF ENN7324 EC3H10B S21e2 C 5763 transistor 5252 F 0915 5252 F 1006 5252 F 0918 EC3H10B ic 7494 ECSP1006-3 CRE 6203 Applications of IC 8259 1978 Data catalog

    A 68066

    Abstract: 17141E 58614 relay LXML-PWC2 152935 LM80 LXW8-PW40 16256 1501-12 77261 led 3528 lumen
    Text: LUXEON Rebel IES LM-80 Test Report Design Resource DR04 LUXEON Rebel IES LM-80 Test Report 1. Number of LED light sources tested Eighty or 160 units per test / 25 units reported. Units reported are selected as follows: a Units are assigned to nominal CCT bins of 2650K, 3000K, 3500K, 4000K, or 6000K.


    Original     		PDF LM-80 2650K, 3000K, 3500K, 4000K, 6000K. LXM8-PW27 2700K) LXM8-PW30 A 68066 17141E 58614 relay LXML-PWC2 152935 LM80 LXW8-PW40 16256 1501-12 77261 led 3528 lumen