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    154-164 A Search Results

    154-164 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F164A/QCA Rochester Electronics LLC 54F164 - SHIFT REGISTER, 8-Bit SERIAL-IN, PARALLEL-OUT - Dual marked (5962-8607101CA) Visit Rochester Electronics LLC Buy
    2SD2164-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    UPD78F1164AGC(A)-UEU-AX Renesas Electronics Corporation 16-bit Low-power Microcontrollers for General Purpose Applications (Non Promotion), , / Visit Renesas Electronics Corporation
    UPD78F1164AGF(A)-GAS-AX Renesas Electronics Corporation 16-bit Low-power Microcontrollers for General Purpose Applications (Non Promotion), , / Visit Renesas Electronics Corporation
    UPD78F1164AGC(R)-UEU-AX Renesas Electronics Corporation 16-bit Low-power Microcontrollers for General Purpose Applications (Non Promotion) Visit Renesas Electronics Corporation

    154-164 A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    military relay

    Abstract: Airpax relay cross reference Airpax Airpax 203 Airpax motor circuit breaker airpax 203 family Airpax breakers LR26229
    Text: Magnetic Circuit Protectors 153 Multi-Pole Circuit Protectors 154 APL/UPL, 205/295 Barriers 155 Configurations 156 Operating Characteristics 158 Delay Curves 159 Specifications 164 APL/UPL Decision Tables 170 205/295 Decision Tables 172 APL/UPL, 205/295 APL/UPL, 205/295 CIRCUIT PROTECTORS


    Original     		PDF DC-50/60Hz 50/60Hz military relay Airpax relay cross reference Airpax Airpax 203 Airpax motor circuit breaker airpax 203 family Airpax breakers LR26229

    851967

    Abstract: No abstract text available
    Text: 160 MHz Bandpass Filter 8 MHz Bandwidth Part Number 851967 Data Sheet Typical Performance 10 -10 -20 -30 -40 -50 -60 -70 -80 -90 Horizontal: MHz/Div 150 152 154 156 158 1602 162 164 166 168 170 Vertical: 10 dB/Div Parameter Center Frequency Specifications


    Original     		PDF

    USB-910

    Abstract: LCD12 LCD15
    Text: Pin Description 1.3.1 Pin Arrangement 180 179 178 177 176 175 174 173 172 171 170 169 168 167 166 165 164 163 162 161 160 159 158 157 156 155 154 153 152 151 150 149 148 147 146 145 144 143 142 141 140 139 138 137 136 135 134 133 132 131 130 129 128 127 126


    Original     		PDF LCD14 LCD12 LCD13 LCD15 IOIS16 BP-240A) USB-910

    diode t25 4 L9

    Abstract: diode t25 4 H9 diode t25 4 E5 diode t25 4 G9 T25 4 F8 t25 4 k8 diode t25 4 F6 diodes t25 4 l9 AC22 AE23
    Text: EPF10K100E Device Pin-Outs ver. 1.1 Pin Name 1 240-Pin PQFP (2), (3) 108 124 107 123 52 60 105 121 155 179 2 2 19 26 154 178 3 3 206 238 204 236 208 240 207 239 16 23 10 11 166 190 164 188 162 186 161 185 159 183 158 182 157 181 156 180 153 177 4 4 1 1 50


    Original     		PDF EPF10K100E 240-Pin 256-Pin diode t25 4 L9 diode t25 4 H9 diode t25 4 E5 diode t25 4 G9 T25 4 F8 t25 4 k8 diode t25 4 F6 diodes t25 4 l9 AC22 AE23

    948C

    Abstract: MRFIC1805 MRFIC1805R2
    Text: MOTOROLA Order this document by MRFIC1805/D SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC1805 1.9 GHz GaAs Power Amplifier This two–stage class AB monolithic GaAs amplifier in a low–cost 16 lead plastic package is designed for output or driver applications in 1.9 GHz PCS


    Original     		PDF MRFIC1805/D MRFIC1805 948C MRFIC1805 MRFIC1805R2

    MMA60

    Abstract: 8 mu 0833 MCE Metelics
    Text: MMA601 High Linearity HBT Die FEATURES • • • • + 44 dBm IP3 at 2.1 GHz + 26 dBm Output Power at P-1dB Compression 50% Power added efficiency typical 100 MHz to 5000 MHz Operation The MMA601 is an InGaP Heterojunction Bipolar Transistor (HBT) provided


    Original     		PDF MMA601 MMA601 44dBm MMA60 8 mu 0833 MCE Metelics

    j608

    Abstract: mrf652210r1 MRF6522-10R1 J605 10R1 NT 407 F MOSFET TRANSISTOR
    Text: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A–AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–10R1 has been specifically designed for use


    Original     		PDF MRF6522 MRF6522-10R1 j608 mrf652210r1 MRF6522-10R1 J605 10R1 NT 407 F MOSFET TRANSISTOR

    j608

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the


    Original     		PDF MRF6522 j608

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A–AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–10R1 has been specifically designed for use


    Original     		PDF MRF6522 31JUL04 31JAN05

    LBT16053

    Abstract: No abstract text available
    Text: 160MHz SAW Filter 8MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: LBT16053 www.sipatsaw.com Features — For IF SAW filter — High attenuation — Single-ended operation — Dual In-line Package


    Original     		PDF 160MHz LBT16053 2002/95/EC) 10deg/Div LBT16053

    Untitled

    Abstract: No abstract text available
    Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the


    Original     		PDF MRF6522â MRF6522-10R1

    unc screw

    Abstract: No abstract text available
    Text: Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 D-Sub DIN 41 652 • CECC 75 301-802 · IEC 60 807 Number of contacts 9-50 Press-in, straight with grounding press-in board locks No. of contacts Identification Performance levels


    Original     		PDF

    mmic C4 sot 89

    Abstract: CGB7014-SC CGB7014-BD CGB7014-SC-0G00 CGB7014-SC-0G0T CGB7014-SP-0G00 CGB7014-SP-0G0T MCH185A101JK PB-CGB7014-SC-0000 PB-CGB7014-SP-0000
    Text: DC-8.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier May 2006 - Rev 23-May-06 CGB7014-SC -BD Features Functional Block Diagram (SOT-89) 18.5 dB Gain @ 6 GHz 24.5 dB Gain @ 850 MHz 36.0 dBm Output IP3 @ 850 MHz 3.5 dB Noise Figure @ 850 MHz


    Original     		PDF 23-May-06 CGB7014-SC OT-89 OT-86 mmic C4 sot 89 CGB7014-SC CGB7014-BD CGB7014-SC-0G00 CGB7014-SC-0G0T CGB7014-SP-0G00 CGB7014-SP-0G0T MCH185A101JK PB-CGB7014-SC-0000 PB-CGB7014-SP-0000

    Untitled

    Abstract: No abstract text available
    Text: CGB7014-SC -BD Advanced Product Information June 2004 V1.0 (1 of 7) Features ❏ 18.5 dB Gain @ 6 GHz ❏ 24.5 dB Gain @ 850 MHz ❏ 36.0 dBm Output IP3 @ 850 MHz ❏ 3.5 dB Noise Figure @ 850 MHz ❏ 20.3 dBm P1dB @ 850 MHz ❏ Low Performance Variation Over Temperature


    Original     		PDF CGB7014-SC OT-89 11a/b/g

    945 TRANSISTOR

    Abstract: 700B AN1294 PD57018 PD57018S
    Text: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD57018 PD57018S PowerSO-10RF PD57018 945 TRANSISTOR 700B AN1294 PD57018S

    transistor c1213

    Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 transistor Rf C1213
    Text: PTF 10009 85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10009 is an 85–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. This device operates at 50% efficiency with 13 dB gain. Nitride surface passivation and full


    Original     		PDF 1-877-GOLDMOS 1522-PTF transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 transistor Rf C1213

    Untitled

    Abstract: No abstract text available
    Text: 29 I 8724 | | CKT. M DIM. 'A 1 DIM. 'B ' ,045±,002 | DIM. 'D ' DIM. 'E ' DIM. 'F 1 DIM. 'G' 5.08 .200 (7.62) (2.54±0.08) . I00±.003 ( 1,14*0.05) 8724 DIM. 'C ' - 0 - - 0 - - 0 —0 " 0 " 0 " 0 " 0 " 0 " 0 ' (2.54±0.08) ' . I00±.003 NON-ACCUM. (18.59)


    OCR Scan     		PDF -8724-20GI64 -8724-22G164 -8724-24G164 -8724-26G164 -8724-28G164 -8724-30G164 -8724-32G164 -8724-34G164 -8724-36G164 -8724-38G164

    Untitled

    Abstract: No abstract text available
    Text: 29 I 8723 | I CKT. DIM. 'A 1 DIM. 'B ' M 8723 DIM. 'C' | DIM. 'D' DIM. 'E' .200 7.62 (18.59) .732 (2 1.13) RECOMMENDED P.C. BOARD HOLE LAYOUT (15.24) .600 (17.78) .700 (20.32) 22.8 ( K (28.75) 1.132 (3 1.29) 1.232 (33.83) 1.332 (41.45) 1.632 (43.99) 1.932


    OCR Scan     		PDF -8723-06B596 -8723-08B596 -8723-I0B596 -8723-I2B596 -8723-I4B596 -8723-I6B596 -8723-I8B596 -8723-20B596 -8723-22B596 -8723-24B596

    Untitled

    Abstract: No abstract text available
    Text: 3G A A IT l6 I A I M I A B I I B 7 t I CKT. OIM. 'A' 06 C i 8 , 15 ±.0 0 6 r (2.54*0.08) .1001.003 T (2 .5 4 *0 .0 8 ) .100 *.0 0 3 NON-ACCUM. 12 14 16 RECOMMENDED P.C. BOARD HOLE LAYOUT 20 22 24 26 28 30 32 34 36 38 40 42 46 48 50 c 52 54 56 SECTION J - J


    OCR Scan     		PDF -8724-06D574 -8724-08D574 I0D574 -8724-I2D574 -8724-I4D574 -8724-I6D574 -8724-I8D574 -8724-20D574 -8724-22D574 -8724-24D574

    PBL302

    Abstract: kbp 3510 m5818 r 1504 C3510W
    Text: ALPHANUMERICAL INDEX PARTS NO. PAG E PARTS PAG E PARTS PAG E PARTS NO. NO. NO. NO. NO. N O. N O. 1N 4001 . . . . . . 150 . 128 E R 1007 . . . . . . 84 K BP 01G . . . . 1N 5401G . . . . . . . . 126 1 N 4 0 0 1 G L . . . . . 12 4 1N5402 . . . . . 158 A R 2 5 0 8 G . . . . . 136


    OCR Scan     		PDF 5401G 5402G 1N5402 5403G 5404G 1N5405 5406G 5408G PBL302 kbp 3510 m5818 r 1504 C3510W

    ic 151 811

    Abstract: No abstract text available
    Text: ERICSSON ^ PTE 10053* 12 Watts, 2.0 GHz LDMOS Field Effect Transistor Description The 10053 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 12 watts minimum output power. Ion implantation, nitride


    OCR Scan     		PDF

    JX - 638

    Abstract: No abstract text available
    Text: ERICSSON ^ PTE 10041 * 12 Watts, 2.0 GHz LDMOS Field Effect Transistor Description The 10041 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 12 watts minimum output power. Ion implantation, nitride


    OCR Scan     		PDF De010 JX - 638

    ic 0941

    Abstract: ericsson 10027 10027 mosfet SIEMENS B 58 371 R/Atmel 0947
    Text: E R IC SSO N í PTE 10027* 12 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor Description The 10027 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 18 watts minimum output power. Nitride surface passivation


    OCR Scan     		PDF P4917-ND P5276 5801-PC ic 0941 ericsson 10027 10027 mosfet SIEMENS B 58 371 R/Atmel 0947

    s12w

    Abstract: PDC 140M PLP-21.4 S-40W s40w T560N T1-1-KK BA25L
    Text: Model Index D o t in d ic a t e s s u r fa c e m o u n t m o d e ls . mixers m odel A D E 'l . ADE-l A S K . AD E-l H . A D E -IH W . AD E-l L . A D E 'l LH . A D E 'IL H W .


    OCR Scan     		PDF TT25-1-KK81 TX16-R3T. s12w PDC 140M PLP-21.4 S-40W s40w T560N T1-1-KK BA25L