152AA-01
Abstract: 0201 footprint marking 2x
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DSN2, 0.6x0.3, 0.4P, 0201 CASE 152AA−01 ISSUE O DATE 06 MAY 2009 SCALE 8:1 A B D 2X DIM A A1 b D E e L E 0.06 C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS.
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152AA-01
152AA
152AA-01
0201 footprint
marking 2x
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NSR01L30NXT5G
Abstract: No abstract text available
Text: NSR01L30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon No−lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN
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NSR01L30NXT5G
NSR01L30/D
NSR01L30NXT5G
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NSR02F30NXT5G
Abstract: No abstract text available
Text: NSR02F30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon No−lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN
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NSR02F30NXT5G
NSR02F30/D
NSR02F30NXT5G
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024 marking bidirectional diode
Abstract: smd diode marking coding
Text: ESD11B Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that
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ESD11B
IEC61000-4-2
ESD11B/D
024 marking bidirectional diode
smd diode marking coding
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NSR02F30NXT5G
Abstract: No abstract text available
Text: NSR02F30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon No−lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN
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NSR02F30NXT5G
NSR02F30/D
NSR02F30NXT5G
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Untitled
Abstract: No abstract text available
Text: ESD11N5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage,
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ESD11N5
ESD11N
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Untitled
Abstract: No abstract text available
Text: ESD11N5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage,
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ESD11N5
ESD11N
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Untitled
Abstract: No abstract text available
Text: ESD11B Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that
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ESD11B
IEC61000-4-2
ESD11B/D
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NSR01L30NXT5G
Abstract: No abstract text available
Text: NSR01L30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon No−lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN
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NSR01L30NXT5G
NSR01L30/D
NSR01L30NXT5G
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Untitled
Abstract: No abstract text available
Text: ESD11B Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that
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ESD11B
ESD11B
ESD11B/D
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Untitled
Abstract: No abstract text available
Text: NSR02L30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon No−lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN
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NSR02L30NXT5G
NSR02L30/D
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Untitled
Abstract: No abstract text available
Text: ESD11N5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage,
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ESD11N5
ESD11N
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Untitled
Abstract: No abstract text available
Text: ESD11B5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that
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ESD11B5
ESD11B
IEC61000-4-2
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TVS 0201 Diode
Abstract: PNC0106A 024 marking bidirectional diode
Text: ESD11N5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage,
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ESD11N5
ESD11N
TVS 0201 Diode
PNC0106A
024 marking bidirectional diode
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024 marking bidirectional diode
Abstract: laptop pcb circuits smd diode marking coding smd diode marking code 0s
Text: ESD11B5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that
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ESD11B5
ESD11B
024 marking bidirectional diode
laptop pcb circuits
smd diode marking coding
smd diode marking code 0s
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NSR01F30NXT5G
Abstract: No abstract text available
Text: NSR01F30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon No−lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN
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NSR01F30NXT5G
NSR01F30/D
NSR01F30NXT5G
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Untitled
Abstract: No abstract text available
Text: ESD11N5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage,
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ESD11N5
ESD11N
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NSR01F30NXT5G
Abstract: No abstract text available
Text: NSR01F30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon No−lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN
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Original
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NSR01F30NXT5G
NSR01F30/D
NSR01F30NXT5G
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Untitled
Abstract: No abstract text available
Text: NSR02F30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon No−lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN
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Original
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NSR02F30NXT5G
NSR02F30/D
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Untitled
Abstract: No abstract text available
Text: ESD11B5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that
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ESD11B5
ESD11B
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Untitled
Abstract: No abstract text available
Text: 10 M AT'L NO. ENG NO. 15-2A-A7A2 A-8981-AVÓ-LF '.5 3 .3 7 5 l„78± 0„Q 8 0 .7 4 .0 7 0 ± . 0 0 3 - , P L A T E D 0 .1 0 /.0 0 4 .0 2 9 2.00 .0 7 9 B~ -0- , 1 / 5 .0 8 1.50 + 0 . 0 8 LZ !_ .0 5 0 (3 X ) .¿ u u 0 5 9 ± .0 0 3 (N O N - P L A T E D )
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-8981-4-V6-LF
8981-4P2
P5-8981-4V4/4R1-P
UL94V-0
SD-8981-4V6
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CK70AW
Abstract: No abstract text available
Text: TUSONIX CAPACITO CERAMIC*RS TUSONIX Types 2425, 2499,2433, 2450 and 327 are sealed into a heavy metal housing at both ends with a low loss thermosetting phenolic. Capacitance values of these feed-thru caps range from 10OOpF to 1500pF for the 500V and MIL types and 100pF to
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10OOpF
1500pF
100pF
5000pF
MIL-C-11015
the317
CK70AW
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Untitled
Abstract: No abstract text available
Text: in t e l October 1998 N o tic e : T his docum ent contains inform ation on products in th e design phase o f developm ent. Do not fin al ize h design w ith this inform ation. R evised in ib n n a tio n will be p u blished w hen the pro d u ct is available.
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CK80
Abstract: No abstract text available
Text: TOSONIX STAND-OFF CERAMIC CAPACITORS A P PLIC A TIO N Superior choice for VHF & UHF by-pass and tuner circuits. MIL too. Stand-Off capacitors are widely used for the dual purpose of by passing R.F. current to ground and mechanically supporting other circuit elements. They are especially
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101AA
102AA
152AA
202AA
501AA
502AA
2451-001-X5U0-1O2P
-001-X5R0-471M
2451-001-X5R0-202K
2451-001-X5E0-681M
CK80
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