45CIQ100
Abstract: No abstract text available
Text: PD -20356D 45CIQ100 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 45A*, 100V Description/Features Major Ratings and Characteristics Characteristics 45CIQ100 Units IF AV Rectangular waveform VRRM (Per Leg) 45* A 100 V 400 A 0.74 V IFSM @ tp = 8.3ms half-sine (Per Leg)
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-20356D
45CIQ100
45CIQ100
O-259AA
MIL-PRF-19500
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AMP D-3100
Abstract: D3100D D-3100S 114-5148 178289-8 AMP D-3100s AMP D-3100 178289 411-5726 2-178288-3 D-3100M
Text: AMP Dynamic Series Connectors D-3000 Series Wire-to-Board, Wire-to-Panel and Wire-to-Wire List of Products by Application Tab Housing Used for both signal circuit and power/power supply circuit applications. D-3000 Series Able to carry 15A max. of current per position and are
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D-3000
D-3100S
D-3100M
D-31062
J-178127-J
AMP D-3100
D3100D
D-3100S
114-5148
178289-8
AMP D-3100s
AMP D-3100 178289
411-5726
2-178288-3
D-3100M
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LOCTITE 263
Abstract: Loctite 262 EZ 422 ST 849 comcode Loctite loctite 495 D-182985 music wire ez 730
Text: fiber.book : sec04.fm Page 7 Thursday, June 22, 2000 11:40 AM Multimode SC, and ST II+ EZ Consumables The D-182804 Kit of Consumables contains consumables to install 500 Multimode ST II+ or SC Connectors. Product Code Comcode D-182804 107 148 942 Contents:
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sec04
D-182804
D-182804
/150x150
D-182959
2492C)
LOCTITE 263
Loctite 262
EZ 422
ST 849
comcode
Loctite
loctite 495
D-182985
music wire
ez 730
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18VDC
Abstract: No abstract text available
Text: 10A, 15A, 20A type High capacity SSR, both tab and screw terminals available AQ-R (30A, 40A type) AQ-R RELAYS FEATURES APPLICATIONS 1. Two types of terminal shape: Plug-in terminal and Screw terminal (30 A, 40 A is screw terminal types only) 2. Flat type of SSR possible by
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RS485
205inch
890inch
AKT4H111100
18VDC
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STR20005
Abstract: STR20000 Series RU3M STR20000 sanken str 45
Text: STR20000 Series Switching Type Chopper • Self Oscillation Type Features ● ● ● ● ● Requires only 4 external components Small size and high efficiency Low switching noise Variable output voltage Use of Sanken semiconductors components ensures high reliability
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STR20000
STR20005
STR20005
STR20000 Series
RU3M
sanken str 45
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bp810
Abstract: BP8-04 BP8-005 BP8-01 BP8-02 BP8-06 BP8-08 BP8-10
Text: BP8-005 THRU BP8-10 FRONTIER ELECTRONICS CO., LTD. 8A BRIDGE RECTIFIER 0.290 7.37 0.210(5.33) FEATURES ! PLACTIC MATERIAL USED CARRIERS UNDERWRITERS LABORATORY FLAMMABILITY RECOGNITION 94V-0 ! TYPICAL IR LESS THAN 1µA ! HIGH SURGE CURRENT CAPABILITY ! LOW FORWARD VOLTAGE DROP
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BP8-005
BP8-10
MIL-STD-202,
300us
bp810
BP8-04
BP8-005
BP8-01
BP8-02
BP8-06
BP8-08
BP8-10
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STR2012
Abstract: STR2005 STR2024 Sanken str2012 STR2013 str2000 series sanken STR2005 STR2000 Sanken str2015
Text: STR2000 Series Switching Type Chopper • Self Oscillation Type Features ● ● ● ● ● Requires only 3 external components Small size and high efficiency Low switching noise Variable output voltage Use of SANKEN's semiconductor elements ensures high reliability
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STR2000
STR2005
STR2012
STR2013
STR2015
STR2024
STR2024
Sanken str2012
str2000 series
sanken STR2005
Sanken str2015
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circuit diagram electronic choke for tube light
Abstract: 40w ELECTRONIC choke BALLAST DIAGRAM m861 ELECTRONIC BALLAST DIAGRAM 400W circuit diagram electronic ballast for 40W tube l U804 TUBE Light Choke function 2 way lighting circuit 40w electronic ballast circuit diagram dimmer 230V circuit diagram
Text: MEMSTYLE SPECTRA Modules range TECHNICAL INFORMATION SPECTRA Modules range Coverplate, Grid and Mounting Box Selection Guide GANG 1 2 3 4 6 8 9 12 18 24 M803 M804 M806 M808 U803 U804 U806 STAINLESS STEEL/MATT CHROME A801SS A802SS A803SS A804SS SATIN BRONZE
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A801SS
A802SS
A803SS
A804SS
A801SB
A806SS
A808SS
A809SS
A812SS
A818SS
circuit diagram electronic choke for tube light
40w ELECTRONIC choke BALLAST DIAGRAM
m861
ELECTRONIC BALLAST DIAGRAM 400W
circuit diagram electronic ballast for 40W tube l
U804
TUBE Light Choke function
2 way lighting circuit
40w electronic ballast circuit diagram
dimmer 230V circuit diagram
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H928
Abstract: H928S KSA928A
Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 928S 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:A089BJ-01 芯片厚度:240±20µm 管芯尺寸:890x890µm 2 焊位尺寸:B 极 150×150µm 2;E 极 153×153µm 2
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100mm
A089BJ-01
KSA928AH928S
-10mAIB
-30VIE
-500mA
-30mA
H928
H928S
KSA928A
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44L-84L
Abstract: 20L-28L LGA 16L SOT23 2A6
Text: SPECIFICATION NO. REV. 2000-0026 A DOCUMENT TITLE: SMD PACKAGE MOISTURE SENSITIVE TABLE OWNER: RELIABILITY MANAGER REQUIRED APPROVALS: RELIABILITY MANAGER QUALITY MANAGER AFFECTED PARTY NOTIFICATION: DO NOT INCLUDE REGULAR DISTRIBUTION PACKAGE ENGINEER DIRECTOR
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18-6731TO
KS8721SL
KS8001SL
MLF88Q-64LD,
MLF2025
022709PM09
44L-84L
20L-28L
LGA 16L
SOT23 2A6
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Untitled
Abstract: No abstract text available
Text: Mini Float Level Switch visit our website PRODUCT INTRODUCTION 4 INTRODUCTION 4 WORKING PRINCIPLE The reed switch relies on two basic scientific principles namely: buoyancy and magnetism. Buoyancy causes the float which contains a magnet to rise with the liquid and magnetism
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D-65428
08-FC-B0-EP,
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Untitled
Abstract: No abstract text available
Text: Magnetic Float Level Switch visit our website INTRODUCTION PRINCIPLE The single unit or multiple reed switch units are housed tightly in stainless steel or engineering plastic stem, and the permanent magnet is sealed into the middle of the specified float
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D-65428
08-FD-B0-EP,
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2SA1668
Abstract: 2SA1667 equivalent for 2sa1668 FM20
Text: 2SA1667/1668 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4381/4382 VCB= VEBO –6 V IEBO IC –2 A V(BR)CEO –10max –10max µA –150 –200 V µA –10max VEB=–6V –150min IC=–25mA –200min –1 A hFE VCE=–10V, IC=–0.7A 60min
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2SA1667/1668
2SC4381/4382)
10max
150min
200min
60min
20typ
60typ
2SA1668
2SA1667
equivalent for 2sa1668
FM20
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heat sensor with fan cooling using ic LM 741
Abstract: 9GV0412P3 smr 40100 San Ace 120L 109R0624J402 109R1212H101 121 M 221 03 9cr0412s sanyo denki brushless p3 Sanyo Denki dc fan 109r0612t4h12
Text: COOLING SYSTEM San Ace Products Information 2006 ver.2 C O N T E N T S Technical Material ・・・・・・・・・・・・・・・・・・・・・ p.3 Product Guide Instruction Manual for Fan ‥‥‥‥‥ p.20 Part Numbering System ‥‥‥‥‥‥ p.22
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2SD2141
Abstract: 2SD2141 equivalent FM20 DMS-10
Text: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA
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2SD2141
Pulse10)
10max
20max
1500min
20typ
95typ
O220F)
150x150x2
100x100x2
2SD2141
2SD2141 equivalent
FM20
DMS-10
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180x180
Abstract: No abstract text available
Text: SEMTECH CORP SflE D • ô 13T 1 3 T 0D03M5fl 1Q1 « S E T COMPLEMENTARY DARLINGTON TRANSISTORS COLLECTOR CURRENT PK A CONT (A) DIE DIMENSIONS (MILS) NPN 60 30 200x210 PNP 60 30 210x210 100 NPN 40 20 180x180 100 PNP 40 20 180x180 150x150 DEVICE SERIES OUTPUT
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0D03M5fl
200x210
210x210
180x180
150x150
122x122
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ic 74151
Abstract: 82C54 oki oki 82c54 oki cross MSM92RB01 msm 32X32 oki msm32
Text: O K I Semiconductor MSM30R0000/MSM32R0000/MSM92R000 Second-Generation 0.5|xm Sea of Gates and Customer Structured Arrays D E SC R IP TIO N Oki's second-generation 0.5|am ASIC products are available in b oth Sea Of Gates SOG and Custom er Structured Array (CSA) architectures. The M SM 30R Series, M SM 32R Series, and M SM 92R Series all offer
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MSM30R0000/MSM32R0000/MSM92R000
MSM30R
MSM32R
MSM92R
semiconduc104x104
92R108X108
ic 74151
82C54 oki
oki 82c54
oki cross
MSM92RB01
msm 32X32
oki msm32
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPT0> Sb 9097250 TOSHIBA <DISCRETE/OPTO DE J T O ^ S S O 56C 07351 DDD73S1 C 7"- $ 3 - 2SB753 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in nun HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
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DDD73S1
2SB753
2SD843.
Hllllll1l11llllllllllllllimiiU1HIIIII1lll
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TRANSISTOR 132-gd
Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Text: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n
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06o3H
TRANSISTOR 132-gd
TRANSISTORS 132 GD
equivalent io transistor 131-G
bbc ds diodes DS 1,8
transistor vergleichsliste
aeg diode Si 61 L
AF124
Transistor Vergleichsliste DDR
OC1044
bbc ds diodes
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BD243
Abstract: 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372 2N6472 2N6488 2N6491
Text: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . . P f to 200 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT
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IT039I
O-2201
lc-15
ITO-31
O-2201
90x90
BD243
2N5781
2N5954
2N6107
2N6248
2N6292
2N6372
2N6472
2N6488
2N6491
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2SD234
Abstract: 2SD235 2SD235 Toshiba 2so234 SD235 2SD2354 2SB434 2SB435 transistor 2sd234 8bb4
Text: r SILICON NPN DIFFUSED JUNCTION TRANSISTOR o • • 2 s d 234 À 2 s d 235 U n it in mm Audio Power A m p l if i e r A p p l i c a t i o n s ; V CE sat = Q 8 V 1 0 .3 M A X . # 3 ,6 ± a 3 ( T yp .) d c = l A ) 2SD235 ^ : P c = 3 5 w (To = 3 5 ^ ) 3^9 2 S B 4 34 , Z S B i 35 t ^ 7') t
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2so234
2sd235
2SB434,
ZSB434
2SB435.
2SD234
220AB
2SD235
2SD235 Toshiba
SD235
2SD2354
2SB434
2SB435
transistor 2sd234
8bb4
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2N6103
Abstract: 300W TRANSISTOR AUDIO AMPLIFIER 40594 Complementary Darlington Audio Power Amplifier 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372
Text: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . . P f to 200 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT
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IT039I
O-2201
lc-15
ITO-31
O-2201
90x90
2N6103
300W TRANSISTOR AUDIO AMPLIFIER
40594
Complementary Darlington Audio Power Amplifier
2N5781
2N5954
2N6107
2N6248
2N6292
2N6372
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2N6491 SWITCH
Abstract: 2N6489 SWITCH 4-0992 ta8662 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372
Text: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . P f to 200 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT
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IT039I
O-2201
lc-15
ITO-31
O-2201
90x90
2N6491 SWITCH
2N6489 SWITCH
4-0992
ta8662
2N5781
2N5954
2N6107
2N6248
2N6292
2N6372
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2SD553
Abstract: Toshiba 2sd553
Text: TOSHIBA 2SD553 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD553 HIGH CURRENT SWITCHING APPLICATIONS PO W ER A M PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX Low Saturation Voltage : V q ^ sat “ 0.4V (Max.) (at Complementary to 2SB553.
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2SD553
2SB553.
2-10A1A
O-220AB
2SD553
Toshiba 2sd553
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