ZTX955
Abstract: DSA003780
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX955 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -790 -900 mV IC=-3A, VCE=-5V* Static Forward Current Transfer Ratio
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ZTX955
-100mA,
50MHz
-100mA
100mA,
-10mA,
100ms
ZTX955
DSA003780
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FZT855
Abstract: FZT955 FZT956 DSA003675
Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT955 FZT956 ISSUE 2 OCTOBER 1995 FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps C
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OT223
FZT955
FZT956
FZT955
FZT855
FZT956
-100mA
-10mA*
FZT855
DSA003675
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NTE55MCP
Abstract: NTE54 NTE55
Text: NTE54 NPN & NTE55 (PNP) Silicon Complementary Transistors High Frequency Driver for Audio Amplifier Description: The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case designed for use as a high frequency driver in audio amplifier applications.
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NTE54
NTE55
30MHz
500mA
500mA,
10MHz,
NTE55MCP
NTE54
NTE55
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ZXTP2014Z
Abstract: ZXTP2014ZTA
Text: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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ZXTP2014Z
-140V
ZXTP2014ZTA
ZXTP2014Z
ZXTP2014ZTA
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Bv 42 transistor
Abstract: No abstract text available
Text: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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ZXTP2014Z
-140V
ZXTP2014ZTA
Bv 42 transistor
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ZX5T955Z
Abstract: ZX5T955ZTA Bv 42 transistor
Text: ZX5T955Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC
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ZX5T955Z
-140V
ZX5T955ZTA
ZX5T955Z
ZX5T955ZTA
Bv 42 transistor
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX955 ISSUE 3 JUNE 94 FEATURES * 3 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 3 Amps * Spice model available C B E E-Line
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ZTX955
100ms
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., FZT955 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps
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FZT955
OT-223
FZT955L
FZT955-AA3-R
FZT955L-AA3-R
OT-223
QW-R207-010
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X5T955
Abstract: No abstract text available
Text: ZX5T955G 140V PNP MEDIUM POWER LOW SATURATOIN TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in
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ZX5T955G
OT223
-140V
OT223
ZX5T955GTA
ZX5T955GTC
X5T955
X5T955
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X5T955
Abstract: "PNP Transistor" ZX5T955G ZX5T955GTA ZX5T955GTC
Text: ZX5T955G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in
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ZX5T955G
OT223
-140V
OT223
ZX5T955GTA
ZX5T955GTC
X5T955
"PNP Transistor"
ZX5T955G
ZX5T955GTA
ZX5T955GTC
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zxtP
Abstract: ZXTP2014G ZXTP2014GTA ZXTP2014GTC
Text: ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTP2014G
OT223
-140V
OT223
ZXTP2014GTA
ZXTP2014GTC
zxtP
ZXTP2014G
ZXTP2014GTA
ZXTP2014GTC
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UP2855 Preliminary PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it
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UP2855
UP2855
OT-223
UP2855L-AA3-R
UP2855G-AA3-R
QW-R207-024
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LB-210
Abstract: 1000C FZT955 FZT956 DSA003718
Text: SOT223 PNP SILICON PLANAR HIGH CURRENT ~1 HIGH PERFORMANCE TRANSISTORS ~ ISSUE 2- OCTOBER 1995 FEATURES ● 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages ● Excellent gain characteristics PARTMARKING DETAILS - COMPLEMENTARY
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OT223
Fi7955
Fi7855
FZT956
FZT955
FZT956
SYM80L
1000C
u0001
LB-210
1000C
FZT955
DSA003718
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UP2855 PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it ideal for applications, such as driving and power management functions
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UP2855
UP2855
OT-223
UP2855L-AA3-R
UP2855G-AA3-R
QW-R207-
QW-R207-024
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Untitled
Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT955 FZT956 ISSUE 3 – MARCH 2005 FEATURES * 4 Am ps continuous current (10 Am ps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Am ps
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OT223
FZT955
FZT956
FZT955
FZT855
FZT956
100ms
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TS16949
Abstract: ZX5T955Z
Text: ZX5T955Z. 140V PNP Low saturation medium power transistor in SOT89 Summary BVCEO = -140V : RSAT = 85m⍀; IC = -3A Description Packaged in the SOT89 outline this new 5th generation low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC
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ZX5T955Z.
-140V
ZX5T955TA
D-81541
TS16949
ZX5T955Z
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Untitled
Abstract: No abstract text available
Text: ZX5T955G 140V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 140V PNP transistor offers extrem ely low on state losses m aking it ideal for use in
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ZX5T955G
OT223
-140V
OT223
5T955GTA
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Untitled
Abstract: No abstract text available
Text: ZXTP2014G 140V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new low saturation 140V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits
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ZXTP2014G
OT223
-140V
OT223
TP2014GTA
TP20852)
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Untitled
Abstract: No abstract text available
Text: FZT955 FZT956 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2 - OCTOBER 1995_ FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps
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FZT955
FZT956
OT223
FZT955
FZT855
FZT956
-100mA,
50MHz
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX955 ISSUE 3 -J U N E 94_ FEATURES * * 3 Amps continuous current Up to 10 Amps peak current * Very low saturation voltage * * Excellent gain characteristics up to 3 Amps
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ZTX955
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX955 ISSUE 3 - JU N E — —— — — FEATURES * 3 Am ps continuous current * Up to 10 Am ps peak current * Very low saturation voltage * Excellent gain characteristics up to 3 Am ps
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ZTX955
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philips BDV64A
Abstract: T1P121 BDV66A PHILIPS SEMICONDUCTOR bdv65a philips 200v 4A pnp BDV65 PHILIPS SEMICONDUCTOR philips TIP147 B0646 B0648 BU807 PHILIPS SEMICONDUCTOR
Text: N AflER P H I L I P S / D I S C R E T E E5E D • bb53T31 D O ltiE l? b Hi T-& 1 -3-*? Power Devices 39 LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN TIP110 TIP111 TIP112 BD675 BD677 BD679 BD681 BD683 PNP fC (D C )0 ) V CEO
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TIP110
TIP111
TIP112
TIP115
TIP116
TIP117
O-220AB
BD675
BD677
BD679
philips BDV64A
T1P121
BDV66A PHILIPS SEMICONDUCTOR
bdv65a philips
200v 4A pnp
BDV65 PHILIPS SEMICONDUCTOR
philips TIP147
B0646
B0648
BU807 PHILIPS SEMICONDUCTOR
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philips BDV64A
Abstract: BDX67
Text: N AflER P H I L I P S / D I S C R E T E ESE D • bb53T31 DOltjEl? b ■ T - £ 7 -3-? Power Devices LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN PNP PACKAGE OUTLINE fC (D C )(1) V CE0 MINIMUM hpg at f(* ^ (ty p O a t V C E(s»t)
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bb53T31
TIP110
TIP111
TIP112
TIP115
TIP116
TIP117
O-220AB
BD679
BD681
philips BDV64A
BDX67
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fast switching pnp transistor 3A 60V
Abstract: 2N5872 SOLITRON DEVICES
Text: _ 8 3 6 8 6 0 2 _SOI TT r oni n r v / m r g SOLITRON DEVICES INC tmh TS 95D 02889 DE-J ßBbäbOS ODDEflflT I ÄTTÄ[L MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc. PNP EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 67 CONTACT METALLIZATION
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203mm)
fast switching pnp transistor 3A 60V
2N5872
SOLITRON DEVICES
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