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    ITT373501D

    Abstract: digital phase shifter mhz
    Text: X-Band Serial Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die ITT373501D FEATURES • • • ADVANCED INFORMATION Phase Shifter / Attenuator 8 to 11 GHz Operation 50 Ω Input Impedance Self-Aligned MSAG MESFET Process RF O ut R F In


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    PDF ITT373501D ITT373501D 150umX150um digital phase shifter mhz

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    Abstract: No abstract text available
    Text: 12W Power Amplifier Die 9 – 10.5 GHz ITT338510D FEATURES • • • • • • ADVANCED INFORMATION Three Stage Balanced High Power Amplifier Broadband Performance 34% Minimum Power Added Efficiency High Linear Gain: 25 dB Minimum Input VSWR 2:1, Minimum


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    PDF ITT338510D ITT338510D 150umX150um 150umX200um 150umX950um

    Untitled

    Abstract: No abstract text available
    Text: Low Noise Amplifier Die 8.0 – 11.0 GHz ITT313503D Balanced Three Stage LNA with Limiter FEATURES • • • • ADVANCED INFORMATION 8 to 11 GHz Operation 50 Ω Input Impedance Excellent Return Loss Self-Aligned MSAG MESFET Process DESCRIPTION MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)


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    PDF ITT313503D ITT313503D 150umX150um

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    Abstract: No abstract text available
    Text: X-Band Parallel Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die ITT373502D FEATURES • • • ADVANCED INFORMATION Phase Shifter /Attenuator RF Out RF In 8 to 11 GHz Operation 50 Ω Input Impedance Self-Aligned MSAG MESFET Process


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    PDF ITT373502D ITT373502D 150umX150um 225um

    ITT373502D

    Abstract: No abstract text available
    Text: X-Band Parallel Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die ITT373502D FEATURES • • • ADVANCED INFORMATION Phase Shifter /Attenuator 8 to 11 GHz Operation 50 Ω Input Impedance Self-Aligned MSAG MESFET Process RF Out RF In


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    PDF ITT373502D ITT373502D 150umX150um 125umX125um 225um

    Untitled

    Abstract: No abstract text available
    Text: X-Band Parallel Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die - High Dynamic Range ITT373503D Features • • • ADVANCED INFORMATION Phase Shifter /Attenuator 8 to 11 GHz Operation 50 Ω Input Impedance Self-Aligned MSAG MESFET Process


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    PDF ITT373503D ITT373503D 150umX150um 225um

    Untitled

    Abstract: No abstract text available
    Text: X-Band Serial Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die ITT373501D FEATURES • • • ADVANCED INFORMATION Phase Shifter / Attenuator 8 to 11 GHz Operation 50 Ω Input Impedance Self-Aligned MSAG MESFET Process RF Out RF In Clock


    Original
    PDF ITT373501D ITT373501D 150umX150um

    phase shifter

    Abstract: ITT373503D
    Text: X-Band Parallel Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die - High Dynamic Range ITT373503D Features • • • ADVANCED INFORMATION Phase Shifter /Attenuator 8 to 11 GHz Operation 50 Ω Input Impedance Self-Aligned MSAG MESFET Process


    Original
    PDF ITT373503D ITT373503D 150umX150um 125umX125um 225um phase shifter

    Untitled

    Abstract: No abstract text available
    Text: 12W PA Shim-Mounted Die 9 – 10.5 GHz ITT338510SM FEATURES • • • • • • ADVANCED INFORMATION Three Stage Balanced High Power Amplifier Broadband Performance 34% Minimum Power Added Efficiency High Linear Gain: 25 dB Minimum Input VSWR 2:1, Minimum


    Original
    PDF ITT338510SM ITT338510SM Pow1-540-563-3949 150umX150um 150umX200um 150umX950um

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION Low Noise Amplifier Die 8.0 -1 1 .0 GHz ITT313503D FEATURES • • • • 8 to 11 GHz Operation 50 n Input Impedance Excellent Return Loss Self-Aligned MSAG MESFET Process MAXIMUM RATINGS DESCRIPTION (Ta = 25 °C unless otherwise noted)


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    PDF ITT313503D ITT313503D 150umX150um