BD139
Abstract: BD139 N bd137 BD139-25 BD139 p BD135-BD137-BD139 bd135 N BD139 silicon transistors
Text: MCC BD135 BD137 BD139 omponents 21201 Itasca Street Chatsworth !"# $ % !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140
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BD135
BD137
BD139
150mAdc
BD136,
BD138,
BD140
BD139
BD139 N
BD139-25
BD139 p
BD135-BD137-BD139
bd135 N
BD139 silicon transistors
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BD139 application
Abstract: BD139 N bd139 BD135 BD139 p of bd139 bd135 N BD139-25 BD136
Text: MCC BD135 BD137 BD139 omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components HDWXUHV • • DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140
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BD135
BD137
BD139
150mAdc
BD136,
BD138,
BD140
BD139
BD139 application
BD139 N
BD139 p
of bd139
bd135 N
BD139-25
BD136
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PDF
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bd139
Abstract: BD139 p BD135-BD137-BD139 bd135 N BD139 N BD139-25 BD136 bd137
Text: MCC BD135 BD137 BD139 omponents 20736 Marilla Street Chatsworth !"# $ % !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140
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Original
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BD135
BD137
BD139
150mAdc
BD136,
BD138,
BD140
BD139
BD139 p
BD135-BD137-BD139
bd135 N
BD139 N
BD139-25
BD136
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PDF
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BD139 N
Abstract: BD135,BD137,BD139 BD139 bd135 N BD137 BD135-BD137-BD139 BD135 power transistor bd135 power transistor bd139 power transistor bd137
Text: BD135 BD137 BD139 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140
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BD135
BD137
BD139
150mAdc
BD136,
BD138,
BD140
BD139 N
BD135,BD137,BD139
BD139
bd135 N
BD137
BD135-BD137-BD139
BD135
power transistor bd135
power transistor bd139
power transistor bd137
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PDF
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BD139 N
Abstract: BD139 bd137 BD135,BD137,BD139 bd135 N BD135 power transistor bd135 BD135-BD137-BD139 BD139 p BD139 silicon transistors
Text: MCC BD135 BD137 BD139 omponents 20736 Marilla Street Chatsworth !"# $ % !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140
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Original
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BD135
BD137
BD139
150mAdc
BD136,
BD138,
BD140
BD139 N
BD139
bd137
BD135,BD137,BD139
bd135 N
BD135
power transistor bd135
BD135-BD137-BD139
BD139 p
BD139 silicon transistors
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PDF
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bd139
Abstract: BD135-BD137-BD139 bd137 BD139 N BD139 p bd135 N BD139-25
Text: MCC BD135 BD137 BD139 omponents 21201 Itasca Street Chatsworth !"# $ % !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140
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Original
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BD135
BD137
BD139
150mAdc
BD136,
BD138,
BD140
BD139
BD135-BD137-BD139
BD139 N
BD139 p
bd135 N
BD139-25
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PDF
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BD139 application
Abstract: BD139 N BD139 BD139 p of bd139 bd135 N BD136
Text: MCC BD135 BD137 BD139 omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components HDWXUHV • • DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140
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Original
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BD135
BD137
BD139
150mAdc
BD136,
BD138,
BD140
O-126
BD139 application
BD139 N
BD139
BD139 p
of bd139
bd135 N
BD136
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PDF
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Untitled
Abstract: No abstract text available
Text: LED-CONVERTER UNIT PS-LD0401-x-yyy S (22W) (PRELIMINARY INFORMATION) DESCRIPTION : This low profile LED-Converter is developed for max. 4 LED-lines APPLICABLE: 4 LED lines (Serial Mode) Pout max 5,5 Watt per line, total max. 22W LED Voltage max. 51Vdc Lamp Current per line: max. 150mAdc
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PS-LD0401-x-yyy
51Vdc
150mAdc
PS-LD0401-1-150
150mA
PS-LD0401-2-110
110mA
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PDF
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BD139
Abstract: BD139 application BD135-BD137-BD139
Text: MCC BD135 BD137 BD139 omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components HDWXUHV • • DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140
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BD135
BD137
BD139
150mAdc
BD136,
BD138,
BD140
BD139
BD139 application
BD135-BD137-BD139
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PDF
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2N2907 application notes
Abstract: 2N2907 a TRANSISTOR
Text: MCC 2N2907 2N2907A omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • High current max.600mA Low voltage (max.60V) Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
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2N2907
2N2907A
600mA)
2N2907A
2N2907 application notes
2N2907 a TRANSISTOR
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PDF
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2N4403 noise figure
Abstract: No abstract text available
Text: 2N4403 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES min. 0.49 (12.5) 0.18 (4.6) MECHANICAL DATA * * * * * 0.14 (3.6) 0.18 (4.6) * Power dissipation O PCM: 0.6 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range
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2N4403
-55OC
150OC
MIL-STD-202E
583-2N4403
2N4403 noise figure
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PDF
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2N2907A
Abstract: 2N2906AUBC 2N2907AUB 2N2906A 2N2907A JANTX 2N2907AUBC 10VDC 2N2906AL 2N2906AUA 2N2906AUB
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2906AL 2N2906AUA 2N2906AUB
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MIL-PRF-19500/291
2N2906A
2N2906AL
2N2906AUA
2N2906AUB
2N2906AUBC
2N2907A
2N2907AL
2N2907AUA
2N2907AUB
2N2907A
2N2906AUBC
2N2907AUB
2N2906A
2N2907A JANTX
2N2907AUBC
10VDC
2N2906AL
2N2906AUA
2N2906AUB
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bav99
Abstract: smd diode marking jc sot23
Text: SMD Switching Diode BAL99/BAV99/BAW56/BAV70 Formosa MS List List. 1 Package outline. 2
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BAL99/BAV99/BAW56/BAV70
JESD22-A102
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
1000hrs.
bav99
smd diode marking jc sot23
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N4401 Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information
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2N4401
600mWatts
-55oC
150oC
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PDF
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CU16025ECPB-u5j
Abstract: CU16025ECPB-W6J Noritake Itron CU16025ECPB-U5J CU16025 CU16025ECPB
Text: OBSOLETE DESIGN - See Replacement CU16025ECPB-W6J 5X7 Dot Character VFD Module ! ! ! ! ! ! ! ! ! 2 X 16 Characters 5mm High LCD Compatible Design Operating Temp -20°°C to +70°°C Single 5V Supply with Power Save Mode High Brightness Blue Green Display Selectable 4/8 bit M68/i80 Interface
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CU16025ECPB-W6J
M68/i80
CU16025ECPB-U5J
1000ns
450ns
M68/i80
29SEP00
CU16025ECPB-u5j
CU16025ECPB-W6J
Noritake Itron CU16025ECPB-U5J
CU16025
CU16025ECPB
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT2222AW 3 1 2 SOT-323 SC-70 VCEO Value 150 833 TJ ,Tstg -55 to+150 MMBT2222AW=P1 (1) u 1. Pulse Test: Pulse Width WEITRON http://www.weitron.com.tw 300us, Duty Cycle 2.0% MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
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MMBT2222AW
OT-323
SC-70)
MMBT2222AW
300us,
150mAdc,
15mAdc)
50mAdc)
mAdc400
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PDF
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DUAL OptoMOS Relay
Abstract: NJ 25 50 N BS7002 PAA110 PAA110L PAA110LS PAA110LSTR PAA110PL PAA110PLTR
Text: PAA110L DUAL POLE OptoMOS Relay Load Voltage Load Current Max RON PAA110L 400 150 22 Description PAA110 is a 400V, 150mA, 22Ω 2-Form-A relay. This performance leader provides high peak load voltage handling capability and improved peak load current handling.
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PAA110L
PAA110
150mA,
3750VRMS
DS-PAA110L-R4
DUAL OptoMOS Relay
NJ 25 50 N
BS7002
PAA110L
PAA110LS
PAA110LSTR
PAA110PL
PAA110PLTR
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PDF
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2907 TRANSISTOR PNP
Abstract: MMBT2907 MMBT2907 ON 1N916 MMBT2907A MMBT2907ALT1 MMBT2907LT1 2907a TRANSISTOR PNP MMBT2907A MMBT2907
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon 3 COLLECTOR MMBT2907LT1 MMBT2907ALT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value 2907 2907A V CEO Collector–Base Voltage V CBO –60 Vdc Emitter–Base Voltage V EBO –5.0 Vdc –600
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MMBT2907LT1
MMBT2907ALT1
236AB)
2907 TRANSISTOR PNP
MMBT2907
MMBT2907 ON
1N916
MMBT2907A
MMBT2907ALT1
MMBT2907LT1
2907a TRANSISTOR PNP
MMBT2907A MMBT2907
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# MMBT2222A Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Purpose Amplifier C Pin Configuration
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MMBT2222A
OT-23
350mWatts
OT-23
10mAdc,
60Vdc,
IC/10
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# MMBT4403 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration
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MMBT4403
OT-23
350mWatts
OT-23
30Vdc,
IC/10
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PDF
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SBT2222F
Abstract: SBT2907F IC600
Text: SBT2222F Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2907F Ordering Information
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SBT2222F
SBT2907F
OT-23F
KST-2079-000
30Vdc,
150mAdc,
15mAdc
30Vdc
SBT2222F
SBT2907F
IC600
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PDF
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Untitled
Abstract: No abstract text available
Text: 1. M echanical D im ensions: 2 . S ch em atic: o- 2 .0 ±0.2 o- -I k 3. E lectrical S p ecification s: 0 .4 ,4±0.1 OCL: 12uH ±5% @2.52MHz 1.0V Q: 25 Min @2.52MHz SRF: 30MHz Min DCR: 3.80 Ohms Max □C Current: 150mAdc Max _L NotBs: LO 1. Soldcrabllityr Leads shall m eet MIL—STD—202G,
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OCR Scan
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52MHz
30MHz
150mAdc
MIL-STD-202G,
UL94V-0
El51556
-t-125
102mm)
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PDF
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RLXF262-331
Abstract: 330uH
Text: 1. M echan ical Dim ensions: 2 . S c h e m a tic : 3. E l e c t r i c a l S p ecificatio n s: OCL: 3 3 0uH ± 10% @796KHz, 1.0V Rated Current: — I 5.0±.5 I— 150mAdc Based on 10% drop in OCL DCR: 4.0 Ohms Maximum Q: 60 Min @ 796KH z SRF: 3.8MHz Min,
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OCR Scan
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330uHÂ
9796KHz,
150mAdc
796KHz
MIL-STD-202G.
UL94V-0
E151556
-l-125
RLXF262-331
330uH
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 . S ch em atic: 1. D im ensions: 2 .5 ± .2 o- o3 .2 ± .3 1.9±.1 3. E lectrical Specs: OCL: 10uH ±10% @2.52MHz, 1V Q: 30 Min 2.52MHz 2.0 SRF: 33MHz Min DC Res.: 2.1 Ohms Max DC Current: 150mAdc Max Notes: 1 . Solderabllity: Leads shall meet MIL— STD— 202G,
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OCR Scan
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52MHz,
52MHz
33MHz
150mAdc
MIL-STD-202G,
E15155G
-t-125
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PDF
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