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    BD139

    Abstract: BD139 N bd137 BD139-25 BD139 p BD135-BD137-BD139 bd135 N BD139 silicon transistors
    Text: MCC BD135 BD137 BD139   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140


    Original     		PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 BD139 N BD139-25 BD139 p BD135-BD137-BD139 bd135 N BD139 silicon transistors

    BD139 application

    Abstract: BD139 N bd139 BD135 BD139 p of bd139 bd135 N BD139-25 BD136
    Text: MCC BD135 BD137 BD139   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components HDWXUHV • • DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140


    Original     		PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 BD139 application BD139 N BD139 p of bd139 bd135 N BD139-25 BD136

    bd139

    Abstract: BD139 p BD135-BD137-BD139 bd135 N BD139 N BD139-25 BD136 bd137
    Text: MCC BD135 BD137 BD139   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140


    Original     		PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 BD139 p BD135-BD137-BD139 bd135 N BD139 N BD139-25 BD136

    BD139 N

    Abstract: BD135,BD137,BD139 BD139 bd135 N BD137 BD135-BD137-BD139 BD135 power transistor bd135 power transistor bd139 power transistor bd137
    Text: BD135 BD137 BD139 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140


    Original     		PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 N BD135,BD137,BD139 BD139 bd135 N BD137 BD135-BD137-BD139 BD135 power transistor bd135 power transistor bd139 power transistor bd137

    BD139 N

    Abstract: BD139 bd137 BD135,BD137,BD139 bd135 N BD135 power transistor bd135 BD135-BD137-BD139 BD139 p BD139 silicon transistors
    Text: MCC BD135 BD137 BD139   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140


    Original     		PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 N BD139 bd137 BD135,BD137,BD139 bd135 N BD135 power transistor bd135 BD135-BD137-BD139 BD139 p BD139 silicon transistors

    bd139

    Abstract: BD135-BD137-BD139 bd137 BD139 N BD139 p bd135 N BD139-25
    Text: MCC BD135 BD137 BD139   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140


    Original     		PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 BD135-BD137-BD139 BD139 N BD139 p bd135 N BD139-25

    BD139 application

    Abstract: BD139 N BD139 BD139 p of bd139 bd135 N BD136
    Text: MCC BD135 BD137 BD139   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components HDWXUHV • • DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140


    Original     		PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 O-126 BD139 application BD139 N BD139 BD139 p of bd139 bd135 N BD136

    Untitled

    Abstract: No abstract text available
    Text: LED-CONVERTER UNIT PS-LD0401-x-yyy S (22W) (PRELIMINARY INFORMATION) DESCRIPTION : This low profile LED-Converter is developed for max. 4 LED-lines APPLICABLE: 4 LED lines (Serial Mode) Pout max 5,5 Watt per line, total max. 22W LED Voltage max. 51Vdc Lamp Current per line: max. 150mAdc


    Original     		PDF PS-LD0401-x-yyy 51Vdc 150mAdc PS-LD0401-1-150 150mA PS-LD0401-2-110 110mA

    BD139

    Abstract: BD139 application BD135-BD137-BD139
    Text: MCC BD135 BD137 BD139   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components HDWXUHV • • DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140


    Original     		PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 BD139 application BD135-BD137-BD139

    2N2907 application notes

    Abstract: 2N2907 a TRANSISTOR
    Text: MCC 2N2907 2N2907A   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • High current max.600mA Low voltage (max.60V) Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates


    Original     		PDF 2N2907 2N2907A 600mA) 2N2907A 2N2907 application notes 2N2907 a TRANSISTOR

    2N4403 noise figure

    Abstract: No abstract text available
    Text: 2N4403 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES min. 0.49 (12.5) 0.18 (4.6) MECHANICAL DATA * * * * * 0.14 (3.6) 0.18 (4.6) * Power dissipation O PCM: 0.6 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range


    Original     		PDF 2N4403 -55OC 150OC MIL-STD-202E 583-2N4403 2N4403 noise figure

    2N2907A

    Abstract: 2N2906AUBC 2N2907AUB 2N2906A 2N2907A JANTX 2N2907AUBC 10VDC 2N2906AL 2N2906AUA 2N2906AUB
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2906AL 2N2906AUA 2N2906AUB


    Original     		PDF MIL-PRF-19500/291 2N2906A 2N2906AL 2N2906AUA 2N2906AUB 2N2906AUBC 2N2907A 2N2907AL 2N2907AUA 2N2907AUB 2N2907A 2N2906AUBC 2N2907AUB 2N2906A 2N2907A JANTX 2N2907AUBC 10VDC 2N2906AL 2N2906AUA 2N2906AUB

    bav99

    Abstract: smd diode marking jc sot23
    Text: SMD Switching Diode BAL99/BAV99/BAW56/BAV70 Formosa MS List List. 1 Package outline. 2


    Original     		PDF BAL99/BAV99/BAW56/BAV70 JESD22-A102 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. bav99 smd diode marking jc sot23

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N4401 Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information


    Original     		PDF 2N4401 600mWatts -55oC 150oC

    CU16025ECPB-u5j

    Abstract: CU16025ECPB-W6J Noritake Itron CU16025ECPB-U5J CU16025 CU16025ECPB
    Text: OBSOLETE DESIGN - See Replacement CU16025ECPB-W6J 5X7 Dot Character VFD Module ! ! ! ! ! ! ! ! ! 2 X 16 Characters 5mm High LCD Compatible Design Operating Temp -20°°C to +70°°C Single 5V Supply with Power Save Mode High Brightness Blue Green Display Selectable 4/8 bit M68/i80 Interface


    Original     		PDF CU16025ECPB-W6J M68/i80 CU16025ECPB-U5J 1000ns 450ns M68/i80 29SEP00 CU16025ECPB-u5j CU16025ECPB-W6J Noritake Itron CU16025ECPB-U5J CU16025 CU16025ECPB

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222AW 3 1 2 SOT-323 SC-70 VCEO Value 150 833 TJ ,Tstg -55 to+150 MMBT2222AW=P1 (1) u 1. Pulse Test: Pulse Width WEITRON http://www.weitron.com.tw 300us, Duty Cycle 2.0% MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


    Original     		PDF MMBT2222AW OT-323 SC-70) MMBT2222AW 300us, 150mAdc, 15mAdc) 50mAdc) mAdc400

    DUAL OptoMOS Relay

    Abstract: NJ 25 50 N BS7002 PAA110 PAA110L PAA110LS PAA110LSTR PAA110PL PAA110PLTR
    Text: PAA110L DUAL POLE OptoMOS Relay Load Voltage Load Current Max RON PAA110L 400 150 22 Description PAA110 is a 400V, 150mA, 22Ω 2-Form-A relay. This performance leader provides high peak load voltage handling capability and improved peak load current handling.


    Original     		PDF PAA110L PAA110 150mA, 3750VRMS DS-PAA110L-R4 DUAL OptoMOS Relay NJ 25 50 N BS7002 PAA110L PAA110LS PAA110LSTR PAA110PL PAA110PLTR

    2907 TRANSISTOR PNP

    Abstract: MMBT2907 MMBT2907 ON 1N916 MMBT2907A MMBT2907ALT1 MMBT2907LT1 2907a TRANSISTOR PNP MMBT2907A MMBT2907
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon 3 COLLECTOR MMBT2907LT1 MMBT2907ALT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value 2907 2907A V CEO Collector–Base Voltage V CBO –60 Vdc Emitter–Base Voltage V EBO –5.0 Vdc –600


    Original     		PDF MMBT2907LT1 MMBT2907ALT1 236AB) 2907 TRANSISTOR PNP MMBT2907 MMBT2907 ON 1N916 MMBT2907A MMBT2907ALT1 MMBT2907LT1 2907a TRANSISTOR PNP MMBT2907A MMBT2907

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBT2222A Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Purpose Amplifier C Pin Configuration


    Original     		PDF MMBT2222A OT-23 350mWatts OT-23 10mAdc, 60Vdc, IC/10

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBT4403 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration


    Original     		PDF MMBT4403 OT-23 350mWatts OT-23 30Vdc, IC/10

    SBT2222F

    Abstract: SBT2907F IC600
    Text: SBT2222F Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2907F Ordering Information


    Original     		PDF SBT2222F SBT2907F OT-23F KST-2079-000 30Vdc, 150mAdc, 15mAdc 30Vdc SBT2222F SBT2907F IC600

    Untitled

    Abstract: No abstract text available
    Text: 1. M echanical D im ensions: 2 . S ch em atic: o- 2 .0 ±0.2 o- -I k 3. E lectrical S p ecification s: 0 .4 ,4±0.1 OCL: 12uH ±5% @2.52MHz 1.0V Q: 25 Min @2.52MHz SRF: 30MHz Min DCR: 3.80 Ohms Max □C Current: 150mAdc Max _L NotBs: LO 1. Soldcrabllityr Leads shall m eet MIL—STD—202G,


    OCR Scan     		PDF 52MHz 30MHz 150mAdc MIL-STD-202G, UL94V-0 El51556 -t-125 102mm)

    RLXF262-331

    Abstract: 330uH
    Text: 1. M echan ical Dim ensions: 2 . S c h e m a tic : 3. E l e c t r i c a l S p ecificatio n s: OCL: 3 3 0uH ± 10% @796KHz, 1.0V Rated Current: — I 5.0±.5 I— 150mAdc Based on 10% drop in OCL DCR: 4.0 Ohms Maximum Q: 60 Min @ 796KH z SRF: 3.8MHz Min,


    OCR Scan     		PDF 330uHÂ 9796KHz, 150mAdc 796KHz MIL-STD-202G. UL94V-0 E151556 -l-125 RLXF262-331 330uH

    Untitled

    Abstract: No abstract text available
    Text: 2 . S ch em atic: 1. D im ensions: 2 .5 ± .2 o- o3 .2 ± .3 1.9±.1 3. E lectrical Specs: OCL: 10uH ±10% @2.52MHz, 1V Q: 30 Min 2.52MHz 2.0 SRF: 33MHz Min DC Res.: 2.1 Ohms Max DC Current: 150mAdc Max Notes: 1 . Solderabllity: Leads shall meet MIL— STD— 202G,


    OCR Scan     		PDF 52MHz, 52MHz 33MHz 150mAdc MIL-STD-202G, E15155G -t-125