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    CM697

    Abstract: No abstract text available
    Text: V E R Y LOW R o n SWITCHING CM 697 SILICON EP IT A X IA L JUNCTION N-CHANNEL FIELD EFFECT T RA N SIST O R G E O M E T R Y 448, PG. 59 ,;?30 M A X .165 = .005 • LOW R DS - 150hms M A X IM U M • LOW V p - 3 Volts M A X IM U M • HIGH lDSS - 3 0 mA M IN IM U M


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    PDF 150hms CM697 CRYSTALONI03

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    Abstract: No abstract text available
    Text: TELEDYNE COMPONENTS 2flE 0*il7fciQ2 OGObSS? a • T> -T ' 3 5 ' a s VERY LOW Ro n SWITCHING CM 697 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 448-1 .230 MAX. .185 ±.005- • LOW RDS - 150hms MAXIMUM • LOW Vp - 3 Volts MAXIMUM


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    PDF 150hms CM697