150A1200V Search Results

150A1200V Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FS50R12KT3 Abstract: Infineon technology roadmap for IGBT infineon power cycling Infineon IGBT2 cycling FS50R12KT4 Semiconductor Group igbt Eoff-FS100R12KE3 Gate Turn-off Thyristor 600V 20A igbt simulation 62mm-Modul Text: Higher Junction Temperature in Power Modules – a demand from hybrid cars, a potential for the next step increase in power density for various Variable Speed Drives Dr. Reinhold Bayerer, Infineon Technologies AG, Max-Planck-Str. 5, Warstein, Germany Abstract	Original	PDF

Catalog Datasheet

MFG & Type

PDF

Document Tags

FS50R12KT3

Abstract: Infineon technology roadmap for IGBT infineon power cycling Infineon IGBT2 cycling FS50R12KT4 Semiconductor Group igbt Eoff-FS100R12KE3 Gate Turn-off Thyristor 600V 20A igbt simulation 62mm-Modul
Text: Higher Junction Temperature in Power Modules – a demand from hybrid cars, a potential for the next step increase in power density for various Variable Speed Drives Dr. Reinhold Bayerer, Infineon Technologies AG, Max-Planck-Str. 5, Warstein, Germany Abstract

Original

PDF