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    14V 10A MOSFET Search Results

    14V 10A MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    14V 10A MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev 01c, May/2005 TarzanTM MQ7250SIP/IBA Non-isolated 10~14VDC input, 0.75~5V output, 10A DC-DC Converter FEATURES Wide operating voltage: 10V ~ 14V Output Current up to 10A Output voltage ripple: 20mVPP High Efficiency 95% Overcurrent /shortcircuit protection


    Original     		May/2005 MQ7250SIP/IBA 14VDC 20mVPP UL/IEC/EN60950 MQ7250 PDF

    Untitled

    Abstract: No abstract text available
    Text: DP7010 10A DC-DC Intelligent dPOL Data Sheet 8V to 14V Input • 0.7V to 5.5V Output Applications • Low voltage, high density systems with Intermediate Bus Architectures IBA • Point-of-load regulators for high performance DSP, FPGA, ASIC, and microprocessor applications


    Original     		DP7010 PDF

    dale r007f

    Abstract: SOD123 12V 0.5W 2R5TPE330M9 C0402C103K3RAC irf7832 KEMET guide C0402C101J5GAC C0402C104K8PAC GRP155R71H472K C0402C472K5RAC
    Text: 19-3409; Rev 0; 9/04 MAX5065 Evaluation Kit Features ♦ 10A Output Current ♦ 250kHz Switching Frequency/Phase ♦ Up to 85% Efficiency ♦ +10V to +14V Input Voltage ♦ VOUT Set to +1.3V Adjustable from +0.6V to +3.3V Component List DESIGNATION QTY 1


    Original     		MAX5065 250kHz C0805C105K4RAC GRM21BR71C105K C0402C104K8PAC GRP155R61A104K 470pF C0402C471K5RAC GRP155R71H471K 100pF dale r007f SOD123 12V 0.5W 2R5TPE330M9 C0402C103K3RAC irf7832 KEMET guide C0402C101J5GAC C0402C104K8PAC GRP155R71H472K C0402C472K5RAC PDF

    Untitled

    Abstract: No abstract text available
    Text: S2206 Data Sheet N-channel SiC power MOSFET bare die VDSS 650V RDS on (Typ.) 120mW ID 29A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode


    Original     		S2206 120mW R1102B PDF

    Untitled

    Abstract: No abstract text available
    Text: S2301 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 80mW ID 40A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode


    Original     		S2301 R1102B PDF

    SiC POWER MOSFET

    Abstract: No abstract text available
    Text: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD lOutline VDSS 1200V RDS on (Typ.) 80mW ID 35A PD 179W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery


    Original     		SCH2080KE O-247 SCH2080KE R1120A SiC POWER MOSFET PDF

    sch2080

    Abstract: SCH2080KE
    Text: SCH2080KE SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD lOutline VDSS 1200V RDS on (Typ.) 80mW ID 35A PD 179W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery


    Original     		SCH2080KE O-247 SCH2080KE R1120A sch2080 PDF

    dc/tx/1/2/PS/SCT2080KE

    Abstract: No abstract text available
    Text: SCT2080KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W Features TO-247 (1) (2) (3) Inner circuit (2) 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 (1) (1) Gate (2) Drain (3) Source


    Original     		SCT2080KE O-247 R1102S dc/tx/1/2/PS/SCT2080KE PDF

    sct2080ke

    Abstract: SCT2080 sct2080k MOSFET 1200V ROHM Solar Charge Controller driver circuits A1412
    Text: SCT2080KE SCT2080KE N-channel SiC power MOSFET Datasheet Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance (2) 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain


    Original     		SCT2080KE O-247 SCT2080KE R1120A SCT2080 sct2080k MOSFET 1200V ROHM Solar Charge Controller driver circuits A1412 PDF

    SiC POWER MOSFET

    Abstract: SCT2080 MOSFET 1200V ROHM
    Text: SCT2080KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance (2) 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source


    Original     		SCT2080KE O-247 SCT2080KE R1102S SiC POWER MOSFET SCT2080 MOSFET 1200V ROHM PDF

    Untitled

    Abstract: No abstract text available
    Text: SCT2080KE N-channel SiC power MOSFET Data Sheet lOutline VDSS 1200V RDS on (Typ.) 80mW ID 40A PD 262W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel *1 Body Diode


    Original     		SCT2080KE O-247 R1102B PDF

    Solar Charge Controller driver circuits

    Abstract: sch2080
    Text: SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Datasheet Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed


    Original     		SCH2080KE O-247 R1120A Solar Charge Controller driver circuits sch2080 PDF

    Untitled

    Abstract: No abstract text available
    Text: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W Features TO-247 Inner circuit 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery


    Original     		SCH2080KE O-247 R1102S PDF

    SCT2080KE

    Abstract: SCT2080
    Text: SCT2080KE Datasheet N-channel SiC power MOSFET lOutline VDSS 1200V RDS on (Typ.) 80mW ID 35A PD 179W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel *1 Body Diode


    Original     		SCT2080KE O-247 R1120A SCT2080KE SCT2080 PDF

    Untitled

    Abstract: No abstract text available
    Text: SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Data Sheet lOutline VDSS 1200V RDS on (Typ.) 80mW ID 40A PD 262W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery


    Original     		SCH2080KE O-247 R1102B PDF

    Untitled

    Abstract: No abstract text available
    Text: SCT2120AF Data Sheet N-channel SiC power MOSFET lOutline VDSS 650V RDS on (Typ.) 120mW ID 29A PD 165W lFeatures TO220AB (1) (2) (3) lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel


    Original     		SCT2120AF 120mW O220AB R1102B PDF

    Untitled

    Abstract: No abstract text available
    Text: SCT2120AF Datasheet N-channel SiC power MOSFET Outline VDSS 650V RDS on (Typ.) 120m ID 29A PD 165W TO220AB Inner circuit Features (2) 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source (1) 4) Easy to parallel


    Original     		SCT2120AF O220AB R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD Outline VDSS 1200V RDS on (Typ.) 80m ID 40A PD 262W Features TO-247 Inner circuit 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery


    Original     		SCH2080KE O-247 R1102B PDF

    sch2080

    Abstract: SCH2080KE SiC POWER MOSFET Solar Charge Controller driver circuits MOSFET 1200V ROHM
    Text: SCH2080KE SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Datasheet Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed


    Original     		SCH2080KE O-247 R1120A sch2080 SCH2080KE SiC POWER MOSFET Solar Charge Controller driver circuits MOSFET 1200V ROHM PDF

    Untitled

    Abstract: No abstract text available
    Text: SCT2080KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 80m ID 40A PD 262W Features TO-247 Inner circuit 1) Low on-resistance (2) 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source (1) 4) Easy to parallel


    Original     		SCT2080KE O-247 R1102B PDF

    relay 5 pin 12v 6a

    Abstract: 14v 10A mosfet regulator 12v with stand by OM9307SP5 OM9307SS OM9308SP5 OM9308SS OM9309SP5 OM9309SS
    Text: Preliminary Data Sheet OM9307SP5 OM9309SP5 OM9308SP5 POWER MOSFET DUAL, HIGH-CURRENT DRIVER MCM IN A PLASTIC AND METAL PACKAGE Versatile, Dual Output Multi-Chip-Modules MCM’s Provide High-Current/High-Voltage Driver Capability In Power SIP FEATURES •


    Original     		OM9307SP5 OM9309SP5 OM9308SP5 relay 5 pin 12v 6a 14v 10A mosfet regulator 12v with stand by OM9307SS OM9308SP5 OM9308SS OM9309SP5 OM9309SS PDF

    MPS 1213

    Abstract: MPS 1213 Integrated Circuit MPS 0826 Si7336A 1RFH7932P6F 3A/MPS 0826 mp8652
    Text: MP8652 15A, 14V, High Frequency Step-Down Converter with Synchronous Gate Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP8652 is a monolithic step-down switch mode converter with a built in internal power MOSFET. It achieves 15A continuous output


    Original     		MP8652 MP8652 20-pin MO-220, MPS 1213 MPS 1213 Integrated Circuit MPS 0826 Si7336A 1RFH7932P6F 3A/MPS 0826 PDF

    lp2937

    Abstract: IRF6609 IRF6633 LM2745 MBRS0520 AN-1573
    Text: National Semiconductor Application Note 1573 Ricardo Capetillo May 2007 Introduction Note, increasing the switching frequency results in a lower inductor current ripple and input and output voltage ripple if the component values are kept the same . Monitor the MOSFET junction temperature since switching losses will increase, and do not exceed the maximum junction temperature of the MOSFET. Refer to the MOSFET manufacturer


    Original     		LM2745 AN-1573 lp2937 IRF6609 IRF6633 MBRS0520 AN-1573 PDF

    lp2937

    Abstract: mbrs0520 sanyo capacitor 6SVPC220M GRM319R71H104KA01 sl22-E3/2C lp293 IRF6609 IRF6633 LM2747 CRCW060310R0
    Text: National Semiconductor Application Note 1641 Ricardo Capetillo May 2007 Introduction Note, increasing the switching frequency results in a lower inductor current ripple and input and output voltage ripple if the component values are kept the same . Monitor the MOSFET junction temperature since switching losses will increase, and do not exceed the maximum junction temperature of the MOSFET. Refer to the MOSFET manufacturer


    Original     		LM2747 AN-1641 lp2937 mbrs0520 sanyo capacitor 6SVPC220M GRM319R71H104KA01 sl22-E3/2C lp293 IRF6609 IRF6633 CRCW060310R0 PDF