Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 BY - 2 3 1 20 LOC REVISIONS DIST HM ALL RIGHTS RESERVED. 00 P LTR DESCRIPTION F G H DATE DWN APVD REV ECO-11-000935 14JAN2011 LH RA REV ECO-11-010380 20MAY2011 LH RA 10FEB14 JB RA REV PER ECO-14-001886
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ECO-11-000935
ECO-11-010380
14JAN2011
20MAY2011
10FEB14
ECO-14-001886
01OCT96
26SEP96
10SEP96
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WJA58
Abstract: TMS320 TMS320C203 TMS320C209 TMS320C25 TMS320F206 C203 F206 SPRS050 WJ-A58
Text: TMS320F206 DIGITAL SIGNAL PROCESSOR SPRS050A - NOVEMBER 1996 - REVISED APRIL 1998 D High-Performance Static CMOS Technology D Includes the T320C2xLP Core CPU D TMS320F206 is a Member of the TMS320C20x Generation, Which Also Includes the TMS320C203, and TMS320C209 Devices
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TMS320F206
SPRS050A
T320C2xLP
TMS320F206
TMS320C20x
TMS320C203,
TMS320C209
TMS320C25
TMS320C5x
WJA58
TMS320
TMS320C203
TMS320C25
C203
F206
SPRS050
WJ-A58
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SSG4990N
Abstract: MosFET
Text: SSG4990N 10 A, 100 V, RDS ON 81 m Dual-N Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to
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SSG4990N
14-Jan-2011
SSG4990N
MosFET
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SSG9435P
Abstract: No abstract text available
Text: SSG9435P -6.5 A, -30 V, RDS ON 49 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to
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SSG9435P
14-Jan-2011
SSG9435P
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SSTE32882
Abstract: dimm pcb layout DDR3 layout TI DDR3 DIMM pinout TE32882
Text: SN74SSQE32882 www.ti.com . SCAS857A – MARCH 2008 – REVISED OCTOBER 2008 28-BIT TO 56-BIT REGISTERED BUFFER WITH ADDRESS PARITY TEST
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SN74SSQE32882
SCAS857A
28-BIT
56-BIT
SSTE32882
dimm pcb layout
DDR3 layout TI
DDR3 DIMM pinout
TE32882
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TPS65950A3
Abstract: C021 TPS65950 microphone capacitor TPS65950 battery charge schematics TPS65950A2 ac overvoltage protection CEA-936A MINI-USB ANALOG CARKIT INTERFACE SPECIFICATION at11dn
Text: TPS65950 Integrated Power Management/Audio Codec Silicon Revision 1.2 Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not
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TPS65950
SWCS032E
TPS65950A3
C021
TPS65950
microphone capacitor
TPS65950 battery charge schematics
TPS65950A2
ac overvoltage protection
CEA-936A MINI-USB ANALOG CARKIT INTERFACE SPECIFICATION
at11dn
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Untitled
Abstract: No abstract text available
Text: SN74AHCT1G86Q-Q1 www.ti.com SCLS721 – DECEMBER 2010 SINGLE 2-INPUT EXCLUSIVE-OR GATE Check for Samples: SN74AHCT1G86Q-Q1 FEATURES 1 • • • • • • DCK PACKAGE TOP VIEW Qualified For Automotive Applications Operating Range of 4.5 V to 5.5 V Max tpd of 8 ns at 5 V
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SN74AHCT1G86Q-Q1
SCLS721
10-mA
SN74AHCT1G86
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TO-3PF package
Abstract: ADS4126 ADS4129 ADS4146 ADS4149 QFN-48 AZ4149
Text: ADS4126, ADS4129 ADS4146, ADS4149 www.ti.com SBAS483G – NOVEMBER 2009 – REVISED JANUARY 2011 12-/14-Bit, 160/250MSPS, Ultralow-Power ADC Check for Samples: ADS4126, ADS4129, ADS4146, ADS4149 FEATURES DESCRIPTION • • The ADS412x/4x are a family of 12-bit/14-bit
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ADS4126,
ADS4129
ADS4146,
ADS4149
SBAS483G
12-/14-Bit,
160/250MSPS,
ADS4129,
TO-3PF package
ADS4126
ADS4129
ADS4146
ADS4149
QFN-48
AZ4149
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43-m diode
Abstract: No abstract text available
Text: SMG2305PE -4.5 A, -20 V, RDS ON 43 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to
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SMG2305PE
SC-59
14-Jan-2011
43-m diode
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SSD70N04-06D
Abstract: MosFET
Text: SSD70N04-06D 75A, 40V, RDS ON 6 mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power
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SSD70N04-06D
O-252
00A/uS
14-Jan-2011
SSD70N04-06D
MosFET
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SSY5829P
Abstract: MosFET Schottky Diode 5V 6A 1206-8CF
Text: SSY5829P -2.5 A, -20 V, RDS ON 0.110 P-Channel Enhancement MOSFET With Schottky Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION 1206-8CF The miniature surface mount MOSFETs utilize a
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SSY5829P
1206-8CF
1206-8CF
14-Jan-2011
SSY5829P
MosFET
Schottky Diode 5V 6A
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Untitled
Abstract: No abstract text available
Text: SN54LV595A, SN74LV595A 8-BIT SHIFT REGISTERS WITH 3-STATE OUTPUT REGISTERS SCLS414O − APRIL 1998 − REVISED JANUARY 2011 2 15 3 14 4 13 5 12 6 11 7 10 8 9 VCC QA SER OE RCLK SRCLK SRCLR QH′ QC QD QE QF QG QH 16 QC QB 1 15 2 3 14 4 13 5 12 6 11 7 10 8
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SN54LV595A,
SN74LV595A
SCLS414O
000-V
A114-A)
A115-A)
SN54LV595A
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Untitled
Abstract: No abstract text available
Text: UCC27321-Q1, UCC27322-Q1 SLUSA13B – FEBRUARY 2010 – REVISED FEBRUARY 2011 www.ti.com SINGLE 9-A HIGH-SPEED LOW-SIDE MOSFET DRIVER WITH ENABLE Check for Samples: UCC27321-Q1, UCC27322-Q1 FEATURES 1 • • • • • • • • Qualified for Automotive Applications
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UCC27321-Q1,
UCC27322-Q1
SLUSA13B
20-ns
15-ns
10-nF
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Untitled
Abstract: No abstract text available
Text: PACKAGE OPTION ADDENDUM www.ti.com 14-Jan-2011 PACKAGING INFORMATION Orderable Device Status 1 Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/ Ball Finish MSL Peak Temp (3) Samples (Requires Login) UCC2570D OBSOLETE SOIC D 14 TBD Call TI
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14-Jan-2011
UCC2570D
UCC2570DG4
UCC2570DTR
UCC2570DTRG4
UCC2570N
UCC2570NG4
UCC3570D
UCC3570DG4
UCC3570DTR
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STW82100
Abstract: No abstract text available
Text: STW82100B RF down converter with embedded integer-N synthesizer Features • High linearity: – IIP3: +25.5 dBm – 2FRF-2FLO spurious rejection: 77 dBc ■ Noise figure: – NF: 10.5 dB Applications ■ Conversion gain – CG: 8 dB ■ RF range: 1620 MHz to 2400 MHz
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STW82100B
STW82100
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STW82100
Abstract: 7783 STW8210 cmos mixer "CMOS mixer" JC JB jt
Text: STW82100B RF down converter with embedded integer-N synthesizer Preliminary data Features • High linearity: – IIP3: +25.5 dBm – 2FRF-2FLO spurious rejection: 77 dBc ■ Noise figure: – NF: 10.5 dB Applications ■ Conversion gain – CG: 8 dB ■ RF range: 1850 MHz to 2400 MHz
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STW82100B
STW82100
7783
STW8210
cmos mixer
"CMOS mixer"
JC JB jt
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Untitled
Abstract: No abstract text available
Text: UCC2305-Q1 www.ti.com SLUSA23 – DECEMBER 2009 HID LAMP CONTROLLER Check for Samples: UCC2305-Q1 FEATURES 1 • • • • • • • • • • Qualified for Automotive Applications Regulates Lamp Power Compensates For Lamp Temperature Fixed Frequency Operation
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UCC2305-Q1
SLUSA23
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Untitled
Abstract: No abstract text available
Text: SMG2301P -2.6 A, -20 V, RDS ON 130 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure
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SMG2301P
SC-59
SC-59e
14-Jan-2011
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SSG4942N
Abstract: MosFET
Text: SSG4942N Dual N-Channel Mode Power MOSFET 4.4 A, 40 V, RDS ON 75 m Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to
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SSG4942N
14-Jan-2011
SSG4942N
MosFET
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SSD70N03-04D
Abstract: MosFET
Text: SSD70N03-04D 75A, 30V, RDS ON 6 mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power
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SSD70N03-04D
O-252
O-252dth
14-Jan-2011
SSD70N03-04D
MosFET
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2SA1980
Abstract: 2SA1980Y 2SA1980G transistor 2sa1980 2SC5343 2SC5343G
Text: 2SA1980 -150 mA, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Low collector saturation voltage: VCE sat =-0.3V(Max.) Low output capacitance : Cob=4pF (Typ.)
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2SA1980
2SC5343
2SA1980-O
2SA1980-Y
2SA1980-G
2SA1980-L
-100mA,
-10mA
14-Jan-2011
2SA1980
2SA1980Y
2SA1980G
transistor 2sa1980
2SC5343
2SC5343G
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DAC56701
Abstract: No abstract text available
Text: DAC5670 www.ti.com SGLS394A – MARCH 2010 – REVISED JANUARY 2011 14-BIT 2.4-GSPS DIGITAL-TO-ANALOG CONVERTER Check for Samples: DAC5670 FEATURES • 1 • • 2 • • 14-Bit Resolution 2.4-GSPS Maximum Update Rate Digital to Analog Converter Dual Differential Input Ports
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DAC5670
SGLS394A
14-BIT
DAC56701
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voice PCM
Abstract: TPS65950A3ZXN 333 045
Text: TPS65950 Integrated Power Management/Audio Codec Silicon Revision 1.2 Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not
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TPS65950
SWCS032E
SWCS032E
voice PCM
TPS65950A3ZXN
333 045
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Sharp GP2D12 distance measuring sensor
Abstract: GP2D12 of GP2D12 sensor 13 L GP2D12J0000F
Text: high performance low power computing Oak Dist Infrared Distance Measuring Sensor Datasheet Revision history Date Doc. Rev. Changes 21-Jun-2011 Rev. 1.4 Disclaimer Update 14-Jan-2011 Rev. 1.3 Modified sample rate range and resolution 29-Oct-2010 Rev. 1.2 Added Operating Temperature Range
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21-Jun-2011
14-Jan-2011
29-Oct-2010
30-Sep-2010
28-Feb-2008
26-June-2007
2/95/EC:
Sharp GP2D12 distance measuring sensor
GP2D12
of GP2D12
sensor 13 L
GP2D12J0000F
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