thd300
Abstract: MAX104 MAX106 MAX106CHC MAX108 ierc heatsink
Text: 19-1486; Rev 0; 7/99 ±5V, 600Msps, 8-Bit ADC with On-Chip 2.2GHz Bandwidth Track/Hold Amplifier The MAX106 PECL-compatible, 600Msps, 8-bit analog-todigital converter ADC allows accurate digitizing of analog signals with bandwidths to 2.2GHz. Fabricated on
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600Msps,
MAX106
MAX106
thd300
MAX104
MAX106CHC
MAX108
ierc heatsink
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Untitled
Abstract: No abstract text available
Text: 19-1486; Rev 1; 11/01 ±5V, 600Msps, 8-Bit ADC with On-Chip 2.2GHz Bandwidth Track/Hold Amplifier The innovative design of the internal T/H, which has an exceptionally wide 2.2GHz full-power input bandwidth, results in high, 7.6 effective bits performance at the
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600Msps,
MAX106
MAX106CHC-TD
MAX106CHC-D
25x25x0
21-0073E
H192-3*
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Untitled
Abstract: No abstract text available
Text: 19-1486; Rev 1; 11/01 ±5V, 600Msps, 8-Bit ADC with On-Chip 2.2GHz Bandwidth Track/Hold Amplifier The innovative design of the internal T/H, which has an exceptionally wide 2.2GHz full-power input bandwidth, results in high, 7.6 effective bits performance at the
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600Msps,
MAX106
MAX106C
25x25x0
21-0073E
H192-3*
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Untitled
Abstract: No abstract text available
Text: 19-1486; Rev 1; 11/01 ±5V, 600Msps, 8-Bit ADC with On-Chip 2.2GHz Bandwidth Track/Hold Amplifier The innovative design of the internal T/H, which has an exceptionally wide 2.2GHz full-power input bandwidth, results in high, 7.6 effective bits performance at the
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600Msps,
MAX106
250mV
MAX106
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sparkle
Abstract: thd300
Text: 19-1486; Rev 1; 11/01 ±5V, 600Msps, 8-Bit ADC with On-Chip 2.2GHz Bandwidth Track/Hold Amplifier The innovative design of the internal T/H, which has an exceptionally wide 2.2GHz full-power input bandwidth, results in high, 7.6 effective bits performance at the
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600Msps,
MAX106
MAX106
sparkle
thd300
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SFDR12
Abstract: MAX106 MAX106CHC MAX108 MAX104 SNR125
Text: 19-1486; Rev 1; 11/01 ±5V, 600Msps, 8-Bit ADC with On-Chip 2.2GHz Bandwidth Track/Hold Amplifier The innovative design of the internal T/H, which has an exceptionally wide 2.2GHz full-power input bandwidth, results in high, 7.6 effective bits performance at the
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600Msps,
MAX106
250mV
MAX106
SFDR12
MAX106CHC
MAX108
MAX104
SNR125
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1486 DIODE
Abstract: P32 23 smd smD SCHOTTKY DIODE P6 p28 smd smd schottky diode s4 p35 smd smd schottky diode s4 53 smd p17 smd schottky diode s4 33 smd transistor p17
Text: ISL6263AEVAL1Z, ISL6263BEVAL1Z Evaluation Boards User Guide Application Note August 11, 2009 AN1486.0 Introduction Interface Connections The ISL6263AEVAL1Z and ISL6263BEVAL1Z evaluation boards demonstrate the performance of the ISL6263A and ISL6263B respectively. The ISL6263A and ISL6263B are
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ISL6263AEVAL1Z,
ISL6263BEVAL1Z
AN1486
ISL6263AEVAL1Z
ISL6263BEVAL1Z
ISL6263A
ISL6263B
SD05H0SK
1486 DIODE
P32 23 smd
smD SCHOTTKY DIODE P6
p28 smd
smd schottky diode s4
p35 smd
smd schottky diode s4 53
smd p17
smd schottky diode s4 33
smd transistor p17
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XP1059-BD
Abstract: XP1059 XP1059-BD-EV1 BD 583 DM6030HK
Text: 13.5-15.0 GHz GaAs MMIC Power Amplifier P1059-BD January 2010 - Rev 04-Jan-10 Features Chip Device Layout 5W Power Amplifier Dual Sided Bias Architecture 28.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +38.0 dBm Pulsed Saturated Output Power +46.0 dBm Output Third Order Intercept
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P1059-BD
04-Jan-10
MIL-STD-883
XP1059-BD
rep059-BD-EV1
XP1059-BD
XP1059
XP1059-BD-EV1
BD 583
DM6030HK
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XP1059-BD
Abstract: BD 875 DM6030HK XP1059-BD-EV1
Text: 13.5-15.0 GHz GaAs MMIC Power Amplifier P1059-BD August 2010 - Rev 26-Aug-10 Features Chip Device Layout 5W Power Amplifier Dual Sided Bias Architecture 28.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +38.0 dBm Pulsed Saturated Output Power +46.0 dBm Output Third Order Intercept
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P1059-BD
26-Aug-10
MIL-STD-883
XP1059-BD
repe059-BD-EV1
XP1059-BD
BD 875
DM6030HK
XP1059-BD-EV1
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K0,05F
Abstract: 1398 DIODE 914 TA 685 T1929N T380N T869N
Text: Koppel - Thyristor + Anschlußspannung 1800 Veff Sperrspannung Bauelement VDRM/RRM 3600 V - Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D Thyristor T [°C] [A] [W] 25 474 818 1303 840 1219
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T380N
T869N
T1929N
K0,05F
1398
DIODE 914
TA 685
T1929N
T380N
T869N
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727 thyristor
Abstract: T1929N T380N T869N
Text: Koppel - Thyristor + Gleichspannung + 1800 V Sperrspannung Bauelement VDRM/RRM 3600 V - Kühlblöcke für verstärkte Luftkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl KB pro Anzahl
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T380N
T869N
T1929N
T1929N
727 thyristor
T380N
T869N
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T 455 THYRISTOR
Abstract: 1055 Datasheet kb 778 LTR-S T1059N T1589N T2159N T308N T458N T459N
Text: Koppel - Thyristor + Gleichspannung 1100 V Sperrspannung Bauelement VDRM/RRM 2200 V - Kühlblöcke für verstärkte Luftkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl KB pro Anzahl
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T308N
T458N
T459N
T709N
T1059N
T1589N
T2159N
T 455 THYRISTOR
1055
Datasheet kb 778
LTR-S
T1059N
T1589N
T2159N
T308N
T458N
T459N
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12f 565
Abstract: DIODE 914 T1059N T1589N T2159N T308N T458N T709N T 455 THYRISTOR
Text: Koppel - Thyristor + Gleichspannung + 1100 V Sperrspannung Bauelement VDRM/RRM 2200 V - Kühlblöcke für verstärkte Luftkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl KB pro Anzahl
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T308N
T458N
T709N
T1059N
T1589N
T2159N
12f 565
DIODE 914
T1059N
T1589N
T2159N
T308N
T458N
T709N
T 455 THYRISTOR
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K0,05F
Abstract: T1929N T380N T869N
Text: Koppel - Thyristor + Gleichspannung 1800 V Sperrspannung Bauelement VDRM/RRM 3600 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl KB pro
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T380N
T869N
T1929N
K0,05F
T1929N
T380N
T869N
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stripline directional couplers
Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,
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SG1009Q32005
MMM6025
MC13820
MRF377HR3,
MRF377HR5
MRF6S9045NR1,
MRF6S9045NBR1,
MRF6S9060NR1,
MRF6S9060NBR1,
MRF6S9125NR1,
stripline directional couplers
MRFP36030
MRF5S9080NB
NONLINEAR MODEL LDMOS
MRF377HR5
Product Selector Guide
MRF1511NT1 ESD
MC13820
MRF377HR3
MRF6S9045NBR1
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D1809N
Abstract: D1069N D269N D3301N D749N D849N 836 DIODE
Text: M2 - Schaltung ~ M2K ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 440 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode
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D269N
D749N
D1069N
D1809N
D849N
D1809N
D1069N
D269N
D3301N
D749N
D849N
836 DIODE
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T1059N
Abstract: T1589N T308N T458N T459N T709N k0 358
Text: Koppel - Thyristor + Gleichspannung 1100 V Sperrspannung Bauelement VDRM/RRM 2200 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl KB pro
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T308N
T458N
T459N
T709N
T1059N
T1589N
T308N
T1059N
T1589N
T458N
T459N
T709N
k0 358
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Untitled
Abstract: No abstract text available
Text: 10-FZ06NBA110FP-M306L28 target datasheet flowBoost0 600V/110A PS* Features flow0 12mm housing ● *PS: 2x 110A parallel switch 100A IGBT and 99mΩ MOSFET ● high speed IGBT with C6 MOSFET and SiC buck diodes ● high efficiency dual booster ● ultra fast switching frequency
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10-FZ06NBA110FP-M306L28
00V/110A
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10PZ12B
Abstract: No abstract text available
Text: 10-PZ12B2A040MR01-M330L68Y target datasheet flowBOOST 0 SiC 1200V/ 40mΩ Features flowBOOST 0 SiC TM ● Rohm SiC-Power MOSFET´s and Schottky Diodes ● Dual Boost Topology ● Ultra Low Inductance with Integrated DC-capacitors ● Extremely Fast Switching with No "Tail" Current
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10-PZ12B2A040MR01-M330L68Y
10PZ12B
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Untitled
Abstract: No abstract text available
Text: F106R6A050SB target datasheet flowPACK 1 600V/50A Features flow1 housing ● Inverter, blocking diodes ● Very compact housing, easy to route ● IGBT3 technology Target Applications Schematic ● Power Regeneration Types ● 10-F106R6A050SB-M435E08 ● 10-F106R6A050SB01-M435E18
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F106R6A050SB
00V/50A
10-F106R6A050SB-M435E08
10-F106R6A050SB01-M435E18
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Untitled
Abstract: No abstract text available
Text: F112R6A050SC target datasheet flowPACK 1 1200V/50A Features flow1 housing ● Inverter, blocking diodes ● Very compact housing, easy to route ● IGBT4 technology Target Applications Schematic ● Power Regeneration Types ● 10-F112R6A050SC-M430E08 ● 10-F112R6A050SC01-M430E18
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F112R6A050SC
200V/50A
10-F112R6A050SC-M430E08
10-F112R6A050SC01-M430E18
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a3546
Abstract: Si4662DY V536
Text: SPICE Device Model Si4662DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4662DY
S-71391Rev.
16-Jul-07
a3546
V536
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Untitled
Abstract: No abstract text available
Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance: 0.11Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package ◆Two FET Devices Built-in •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP134A11A1SR is a P-channel Power MOSFET with low
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XP134A11A1SR
XP134A11A1SR
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74AC11013
Abstract: 74AC11013D 74AC11013N 74ACT11013D 74ACT11013N AC11013 ACT11013
Text: Philips Components— Signetics Document No. 853-1486 ECN No. 00730 Date of Issue O ctober 17, 1990 Status Product Specification AC11013: Product Specification ACT11013: Objective Specification Dual 4-input NAND Schmitt-trigger ACL Products QUICK REFERENCE DATA
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AC11013
ACT11013
74AC/ACT11013
AC11013:
ACT11013:
74AC/ACT11013
500ft
10MHz
74AC11013
74AC11013D
74AC11013N
74ACT11013D
74ACT11013N
AC11013
ACT11013
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