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    1461 TRANSISTOR Search Results

    1461 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    1461 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LMH6321TS-EVAL

    Abstract: 1461 transistor AN-1461 LM321 LM8261 LMH6321 an-1461 national
    Text: National Semiconductor Application Note 1461 November 2006 General Description characterization. Both boards have identical circuit configurations and are designed for either inverting or non-inverting gain. The evaluation board schematic is shown in Figure 1. The


    Original     		PDF LMH6321MR-EVAL LMH6321TS-EVAL AN-1461 LMH6321TS-EVAL 1461 transistor AN-1461 LM321 LM8261 LMH6321 an-1461 national

    LMH6321

    Abstract: LM8261 AN-1461 LM321 LMH6321TS-EVAL 2019.0002
    Text: National Semiconductor Application Note 1461 June 2006 General Description characterization. Both boards have identical circuit configurations and are designed for either inverting or non-inverting gain. The LMH6321MR-EVAL for the 8-Pin PSOP type package


    Original     		PDF LMH6321MR-EVAL LMH6321TS-EVAL LMH6321 O-263) AN-1461 LMH6321 LM8261 AN-1461 LM321 LMH6321TS-EVAL 2019.0002

    1461 smd

    Abstract: D1207 MSK1461 MSK1461B MSK1461E
    Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. HIGH SPEED/VOLTAGE OP AMP 1461 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Extremely Fast - 500v/µS Wide Supply Range ±15V to ±45V VMOS Output, No Secondary Breakdown Large Gain-Bandwidth Product


    Original     		PDF MIL-PRF-38534 800mA MSK1461 MSK1461E MSK1461B 1461 smd D1207 MSK1461 MSK1461B MSK1461E

    A19 SMD transistor

    Abstract: No abstract text available
    Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 1461 HIGH SPEED/VOLTAGE OP AMP 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Extremely Fast - 500v/µS Wide Supply Range ±15V to ±45V VMOS Output, No Secondary Breakdown


    Original     		PDF MIL-PRF-38534 500v/Â 800mA MSK1461 MSK1461E MSK1461B A19 SMD transistor

    vmos fet

    Abstract: VMOS AUDIO AMPLIFIER vmos audio circuit MSK1461 MSK1461B
    Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 1461 HIGH SPEED/VOLTAGE OP AMP 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Extremely Fast - 500v/µS Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions


    Original     		PDF MIL-PRF-38534 800mA MSK1461 MSK1461B Military-Mil-PRF-38534 vmos fet VMOS AUDIO AMPLIFIER vmos audio circuit MSK1461 MSK1461B

    MAX4526

    Abstract: MAX456 MAX4562 MAX4562CEE MAX4562EEE MAX4563 MAX4563CEE MAX4563EEE
    Text: 19-1461; Rev 0; 4/99 Serially Controlled, Clickless Audio/Video Switches The MAX4562/MAX4563 serial-interface controlled switches are ideal for multimedia applications. Each device features 30Ω max on-resistance RON , 5Ω RON match, and 5Ω RON flatness. Audio off-isolation and


    Original     		PDF MAX4562/MAX4563 20kHz -85dB, 10MHz -55dB. MAX4562 MAX4563 MAX4562/MAX4563 MAX4526 MAX456 MAX4562CEE MAX4562EEE MAX4563CEE MAX4563EEE

    I2C and SPI/QSPI/MICROWIRE

    Abstract: MAX4526 MAX456 MAX4562 MAX4562CEE MAX4562EEE MAX4563 MAX4563CEE MAX4563EEE
    Text: 19-1461; Rev 0; 4/99 Serially Controlled, Clickless Audio/Video Switches The MAX4562/MAX4563 serial-interface controlled switches are ideal for multimedia applications. Each device features 30Ω max on-resistance RON , 5Ω RON match, and 5Ω RON flatness. Audio off-isolation and


    Original     		PDF MAX4562/MAX4563 20kHz -85dB, 10MHz -55dB. MAX4562 MAX4563 MAX4562/MAX4563 I2C and SPI/QSPI/MICROWIRE MAX4526 MAX456 MAX4562CEE MAX4562EEE MAX4563CEE MAX4563EEE

    Untitled

    Abstract: No abstract text available
    Text: 19-1461; Rev 0; 4/99 Se ria lly Cont rolle d, Clic k le ss Audio/Vide o Sw it c he s The MAX4562/MAX4563 serial-interfac e c ontrolled switches are ideal for multimedia applications. Each device features 30Ω max on-resistance RON , 5Ω RON match, and 5Ω RON flatness. Audio off-isolation and


    Original     		PDF MAX4562/MAX4563 20kHz -85dB, 10MHz -55dB. MAX4562 MAX4563

    MAX4526

    Abstract: MAX456 MAX4562 MAX4562CEE MAX4562EEE MAX4563 MAX4563CEE MAX4563EEE
    Text: 19-1461; Rev 0; 4/99 概要 _ 特長 _ MAX4562/MAX4563はマルチメディアアプリケー ションに最適のシリアルインタフェース制御スイッチ です。各デバイスは、オン抵抗 RON 30Ω(max)、RON


    Original     		PDF MAX4562/MAX4563 20kHz -85dB10MHz -55dB MAX4562/MAX45632 MAX4562 MAX45633SPITM/QSPITM/MICROWIRETM 16QSOP 20kHz-85dB MAX4526 MAX456 MAX4562 MAX4562CEE MAX4562EEE MAX4563 MAX4563CEE MAX4563EEE

    Untitled

    Abstract: No abstract text available
    Text: MIL-PRF-3 8 5 3 4 C ERTIFIED M .S.KEN NED Y C ORP. 1461 HIGH SPEED/V OLT A GE OP A MP 4 7 0 7 D e y Road Liv erpool, N. Y . 1 3 0 8 8 3 1 5 7 0 1-6 7 5 1 FE A T URES: Ex tremely F ast - 5 0 0 v/µS W ide Supply Range ± 1 5 V to ± 4 5 V V M OS Output, No Secondary Breakdo w n


    Original     		PDF MSK1461 MSK1461E MSK1461B

    Untitled

    Abstract: No abstract text available
    Text: TDA2050 32 W hi-fi audio power amplifier Features • High output power 50 W music power IEC 268.3 rules ■ High operating supply voltage (50 V) ■ Single or split supply operations ■ Very low distortion ■ Short-circuit protection (OUT to GND) ■


    Original     		PDF TDA2050

    74HC9046

    Abstract: 74hct4050 74HC273 CMOS TTL Logic Family Specifications 74hc245 74HCT297 74hc154 application 74hct133 74hc297 application notes 74HC7014 74HCT299
    Text: INTEGRATED CIRCUITS DATA SHEET FAMILY SPECIFICATIONS HCMOS family characteristics March 1988 File under Integrated Circuits, IC06 INTEGRATED CIRCUITS DATA SHEET Package outline drawings January 1996 File under Integrated Circuits, IC06 Philips Semiconductors


    Original     		PDF OT27-1 OT38-4 OT146-1 OT101-1 OT222-1 OT117-1 74HCU 74HCT 74HC9046 74hct4050 74HC273 CMOS TTL Logic Family Specifications 74hc245 74HCT297 74hc154 application 74hct133 74hc297 application notes 74HC7014 74HCT299

    TDA2050

    Abstract: TDA2050 pin layout tda 1040 application tda2050 TDA2050 audio circuit Tda 2050
    Text: TDA2050 32 W hi-fi audio power amplifier Features • High output power 50 W music power IEC 268.3 rules ■ High operating supply voltage (50 V) ■ Single or split supply operations ■ Very low distortion ■ Short-circuit protection (OUT to GND) ■


    Original     		PDF TDA2050 TDA2050 TDA2050 pin layout tda 1040 application tda2050 TDA2050 audio circuit Tda 2050

    tda2050

    Abstract: No abstract text available
    Text: TDA2050 32 W hi-fi audio power amplifier Features • High output power 50 W music power IEC 268.3 rules ■ High operating supply voltage (50 V) ■ Single or split supply operations ■ Very low distortion ■ Short-circuit protection (OUT to GND) ■


    Original     		PDF TDA2050 tda2050

    fairchild AG33

    Abstract: K30 mosfet rPGA-989 transistor r14 ah16 MPCh1040LR36 r33 ah16 burndy Y35 ONSEMI diode a30 K34 mosfet K26 mosfet
    Text: ISL62882EVAL2Z User Guide Application Note July 13, 2009 AN1461.1 Author: Jia Wei Introduction Interface Connections The ISL62882EVAL2Z evaluation board demonstrates the performance of the ISL62882 multiphase synchronous-buck PWM VCORE controller implementing Intel IMVP-6.5


    Original     		PDF ISL62882EVAL2Z AN1461 ISL62882 fairchild AG33 K30 mosfet rPGA-989 transistor r14 ah16 MPCh1040LR36 r33 ah16 burndy Y35 ONSEMI diode a30 K34 mosfet K26 mosfet

    1461 transistor

    Abstract: 1461 TELEDYNE 1461
    Text: WTELEDYNE COMPONENTS 1461 OPERATIONAL AMPLIFIER — HIGH-SPEED, HIGH-POWER, VMOS-OUTPUT FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ The 1461 is an extremely fast, FET-input, VMOS-output, power operational amplifier. It operates from ±15V to +40V supplies, has output voltages up to ±34V, and output


    OCR Scan     		PDF

    TELEDYNE 1461

    Abstract: TELEDYNE+1461
    Text: TELEDYNE C O M PO N EN T S 3bE D • â^l?tOE DGG?fe.2b b « T S C * T * 7 0v- 0 ‘ 7 - \ C WTELEDYNE COMPONENTS 1461 OPERATIONAL AMPLIFIER — HIGH-SPEED, HIGH-POWER, VMOS-OUTPUT FEATURES GENERAL DESCRIPTION ■ ■ ■ ■ ■ ■ ■ The 1461 is an extremely fast, FET-input, VMOS-output, power operational amplifier. It operates from +15V to


    OCR Scan     		PDF 1461X1 01--Lf fiS17bOB DD07b3B TELEDYNE 1461 TELEDYNE+1461

    RFP12N18

    Abstract: RFP12N20 RFP12M20 RFP mosfets RFM12N18 RFM12N20
    Text: Standard Power MOSFETs RFM12N18, RFM12N20, RFP12N18, RFP12N20 F ile N u m b e r 1461 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 180 and 200 V rDs on : 0.25 n Features: • SOA is power-dissipation lim ited • Nanosecond sw itching speeds


    OCR Scan     		PDF RFM12N18, RFM12N20, RFP12N18, RFP12N20 92CS-33741 RFM12N18 RFM12N20 RFP12N18 RFP12N20* RFP12N20 RFP12M20 RFP mosfets

    Untitled

    Abstract: No abstract text available
    Text: KENNEDY H S M.S. KENNEDY CORP. CORP b3E D • S1343D0 D0002D2 HIGH SPEED/VOLTAGE OP AMP SS2 ■ MSK 1461 (315) 699-9201 8170 Thompson Road • Cicero, N.Y. 13039 FEATURES: • • • • • • Extremely Fast Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions


    OCR Scan     		PDF S1343D0 D0002D2 1461B Mil-H-38534

    sk1461

    Abstract: sk 100 transistor
    Text: M í f t H,GH SPoEpEampOLTAGE 1 4 6 1 M .S . K E N N E D Y C O R P 315 699-9201 8170 Thompson Road •Cicero, N.Y. 13039 FEATURES: Extremely Fast Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions Large Galn-Bandwldth Product FET Input


    OCR Scan     		PDF 1461B MII-H-38534 sk1461 sk 100 transistor

    IS955

    Abstract: marking Y24 2SA1461 2SC3734 marking 2 AW
    Text: NEC / ELECTRON DEVICE j SILICON TRANSISTOR / _ _ . _ . _ . 2SA1461 HIGH FREQUENCY AMPLIFIER AND SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M INI MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High Speed Switching: t stg = 110 ns 2.8 ± 0.2 • High Gain Bandwidth Product : f j = 5 1 0 M H z


    OCR Scan     		PDF 2SA1461 2SC3734 IS955 marking Y24 2SA1461 2SC3734 marking 2 AW

    j139

    Abstract: 0395 ADC BD179 BD180 3268 127 D TRANSISTOR H127
    Text: motorola x s t r s /r sc 12E D § b3b7SS4 QQÖ4713 2 | f MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR 3.0 AMPERES POWER TRANSISTOR NPN SILICON . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    OCR Scan     		PDF BD179 BD180 Q0fi4713 O-22SAA j139 0395 ADC BD180 3268 127 D TRANSISTOR H127

    482 transistor

    Abstract: transistor f 482
    Text: SIEMENS BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. • ¿r= 8G H z F = 1.2dB at 900MHz • Two galvanic internal isolated XL Transistors in one package "p H ETE" a ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz Q62702-F1573 OT-363 482 transistor transistor f 482

    bo 139

    Abstract: bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140
    Text: MOTORCL A SC 1EE D § L3b72S4 0GflM703 T | XSTRS/R F BD135,-6,-10,-16 BD137,-6,-10,-16 BD139,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLA STIC M EDIUM POW ER SILIC O N NPN TR A N SISTO R 1.S AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing


    OCR Scan     		PDF L3b72S4 0GflM703 BD135 BD137 BD139 225AA bo 139 bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140