12F10
Abstract: 12F100 12F120 12F20 12F40 12F60 12F80 12FR100 12FR120 12FR60
Text: 2002-03-26 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-145-58 12F10 diod 100V 12A 70-145-66 12F100 diod 1000V 12A 70-145-74 12F120 diod 1200V 12A 70-145-82 12F20 diod 200V 12A
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12F10
12F100
12F120
12F20
12F60
12F80
12FR100
12F40
12FR120
12FR60
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145-16NO1
Abstract: ir 145 a 116-16NO1
Text: VUB 116 / 145 Advanced Technical Information VRRM = 1600 V IdAVM = 116/145 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 10+11 12 19+20 Type V 1600 1600 1 VUB 116-16 NO1 VUB 145-16 NO1 6+7 4+5 2+3 8+9 VRRM IdAVM IFSM I2t
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B25/50
145-16NO1
ir 145 a
116-16NO1
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vub 70 -16
Abstract: vub 70 S2M-G ixys vub 70 145-16NO1
Text: VUB 116 / 145 VRRM = 1600 V IdAVM = 116/145 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 10+11 12 Type 13 19+20 V 1600 1600 VUB 116-16 NO1 VUB 145-16 NO1 1 6+7 4+5 2+3 8+9 VRRM IdAVM IFSM I2t Conditions Rectifier Diodes
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145-16NO1
vub 70 -16
vub 70
S2M-G
ixys vub 70
145-16NO1
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vub 70 -16
Abstract: vub 70 145-16NO1 ixys vub 70 s2mg S2M-G tftF0 ixys vub 70 -16
Text: VUB 116 / 145 VRRM = 1600 V IdAVM = 116/145 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 10+11 12 VRRM 13 19+20 Type V 1600 1600 1 VUB 116-16 NO1 VUB 145-16 NO1 6+7 4+5 2+3 8+9 VRRM IdAVM IFSM I2t Conditions Rectifier Diodes
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145-16NO1
vub 70 -16
vub 70
145-16NO1
ixys vub 70
s2mg
S2M-G
tftF0
ixys vub 70 -16
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vub 70 -16
Abstract: vub 70 145-16NO1 s2mg tftF0
Text: VUB 116 / 145 VRRM = 1600 V IdAVM = 116/145 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 10+11 12 Type 13 19+20 V 1600 1600 VUB 116-16 NO1 VUB 145-16 NO1 1 6+7 4+5 2+3 8+9 VRRM IdAVM IFSM I2t Conditions Rectifier Diodes
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145-16NO1
vub 70 -16
vub 70
145-16NO1
s2mg
tftF0
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Untitled
Abstract: No abstract text available
Text: SKDT 145 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik SEMIPONTTM 5 Bridge Rectifier SKDT 145 Target Data Features
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vub 70
Abstract: 145-16NO1 ixys vub 70 vub 70 -16
Text: VUB 116 / 145 VRRM = 1600 V IdAVM = 116/145 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 10+11 12 VRRM 13 19+20 Type V 1600 1600 1 VUB 116-16 NO1 VUB 145-16 NO1 6+7 4+5 2+3 8+9 18 17 21+22 Pin arrangement see outline drawing
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145-16NO1
20080513b
vub 70
145-16NO1
ixys vub 70
vub 70 -16
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marking BSs sot-23
Abstract: Q67000-S132 E6327 marking BSs SOT23 MARKING SBs
Text: BSS 145 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.4 .2.3 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 145 65 V 0.22 A 3.5 Ω SOT-23 SBs Type BSS 145 Ordering Code Q67000-S132 D Tape and Reel Information
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OT-23
Q67000-S132
E6327
Sep-13-1996
marking BSs sot-23
Q67000-S132
E6327
marking BSs
SOT23 MARKING SBs
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E6327
Abstract: Q67000-S132 0051A marking BSs
Text: BSS 145 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.4 .2.3 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 145 65 V 0.22 A 3.5 Ω SOT-23 SBs Type BSS 145 Ordering Code Q67000-S132 D Tape and Reel Information
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OT-23
Q67000-S132
E6327
E6327
Q67000-S132
0051A
marking BSs
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vub145-16noxt
Abstract: vub 145-16noxt
Text: VUB 145-16NOXT Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.75 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.35 V = 108 A
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145-16NOXT
VUB145-16NOXT
E72873
20110307a
vub145-16noxt
vub 145-16noxt
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Untitled
Abstract: No abstract text available
Text: MII 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IC25 = 160 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MDI MID 1 1 7 6 3 4 5 2 3 4 5 Symbol Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW
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vari-l dbm
Abstract: 180I DBM-145
Text: DBM-145 Subminiature Flatpack Double Balanced Mixer 10-1500 MHz DESCRI PTiON Vari-l Model DBM-145 is a hig1 perfutm.-=e lubmnalwe double ~ mixer utiUzlng precision ~ beam-le8d ~ barrier diodes. The L and R POfts have a b8OOwidth of 10 MHz to 1500 MHz while
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DBM-145
DBM-145
Inpu881o-wv
und88ir8d
E8I151
3CD1371.
o-m-0311
vari-l dbm
180I
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VUB145-16NOXT
Abstract: fast recovery Diode 1200V 200A
Text: VUB 145-16NOXT Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.75 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.35 V = 108 A
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145-16NOXT
VUB145-16NOXT
E72873
20110907b
VUB145-16NOXT
fast recovery Diode 1200V 200A
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VUB145-16NOXT
Abstract: No abstract text available
Text: VUB 145-16NOXT Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.75 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.35 V = 108 A
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145-16NOXT
VUB145-16NOXT
E72873
20110907b
VUB145-16NOXT
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145-16NO1
Abstract: VUB145-16NO1 vub 70 ic MARKING QG E72873 ixys vub 70 -16no1 vub14516no1 sensor marking code 145A
Text: VUB 145-16NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.76 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 3.7 V = 100 A
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145-16NO1
VUB145-16NO1
E72873
20101007a
145-16NO1
VUB145-16NO1
vub 70
ic MARKING QG
E72873
ixys vub 70 -16no1
vub14516no1
sensor marking code 145A
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ixys vub 70 -16no1
Abstract: VUB145 VUB145-16NO1 145-16NO1 VUB145-16NOXT E72873 marking ntc 80 ntc application
Text: VUB 145-16NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.76 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 3.7 V = 100 A
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145-16NO1
VUB145-16NO1
E72873
powe00
20101007a
ixys vub 70 -16no1
VUB145
VUB145-16NO1
145-16NO1
VUB145-16NOXT
E72873
marking ntc 80
ntc application
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E72873
Abstract: 0443k ic equivalent MID 400
Text: MII 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IC25 = 160 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 7 6 3 4 5 2 MDI 1 1 3 4 5 Symbol Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW
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Untitled
Abstract: No abstract text available
Text: MII 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IC25 = 160 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 1 7 6 3 4 5 2 MDI 1 3 4 5 1 7 6 3 2 1 4 5 6 7 3 2 2 E 72873 Preliminary data Symbol Conditions Maximum Ratings
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D-68623
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AD8066
Abstract: HRA SOT 103-114 AD8065 AD8065ARZ BJT datasheet with i-v characteristics fet preamp schematics for a PA amplifier 02916-E-032 Crosstalk-AD8066
Text: High Performance, 145 MHz FastFET Op Amps AD8065/AD8066 FEATURES APPLICATIONS Qualified for automotive applications FET input amplifier 1 pA input bias current Low cost High speed: 145 MHz, −3 dB bandwidth G = +1 180 V/ s slew rate (G = +2) Low noise
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AD8065/AD8066
OT-23-5,
D02916-0-8/10
AD8066
HRA SOT
103-114
AD8065
AD8065ARZ
BJT datasheet with i-v characteristics
fet preamp
schematics for a PA amplifier
02916-E-032
Crosstalk-AD8066
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DSAI 130A
Abstract: 2224 sr GFIJ ANI 1015
Text: User's Manual 32 R32C/142 Group and R32C/145 Group User's Manual: Hardware R32C/142 Group and R32C/145 Group User’s Manual: Hardware RENESAS MCU M16C Family / R32C/100 Series All information contained in these materials, including products and product specifications, represents
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R32C/142
R32C/145
R32C/100
R01UH0218EJ0110
DSAI 130A
2224 sr
GFIJ
ANI 1015
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Untitled
Abstract: No abstract text available
Text: BSS 145 Infineon t«ehno!ogi6* SIPMOS Small-Signal Transistor • N channel s \A • Enhancement mode 2 • ^GS th = 1 4 -2-3 V 1 Pin 1 Pin 2 Vbs BSS 145 65 V Type BSS 145 Ordering Code Q67000-S132 0.22 A Pin 3 S G Type VPS05557 flDS(on) Package Marking
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Q67000-S132
VPS05557
OT-23
E6327
S35bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
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diode 14512 H
Abstract: No abstract text available
Text: Li IXYS Mil 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IGBT Modules lC25 = 160 A Short Circuit SOA Capability ^ ces ” ^ Square RBSOA ^CE sat typ. = ^ Mil MID I Ir 7C ^J 6 0 -+ ^ MDI I 11 l. o1 M : : ^ l iïjÔ jj E 72873 Preliminary data Symbol Conditions Maximum Ratings
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D-68623
diode 14512 H
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SOT23 MARKING SBs
Abstract: VPS05557 marking SBs BSS145 SD marking BSs sot23 siemens
Text: SIEMENS BSS 145 SIPMOS Small-Signal Transistor h • N channel j\/\ • Enhancement mode 2 • ^GSith = 14 •••2-3 v 1 Pin 1 Pin 2 G Type Vos b BSS 145 65 V 0.22 A Type BSS 145 Ordering Code Q67000-S132 ffDS on) 3.5 n VPS05557 Pin 3 S Package Marking
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VPS05557
OT-23
Q67000-S132
E6327
BSS145
OT-23
GPS05557
SOT23 MARKING SBs
VPS05557
marking SBs
BSS145 SD
marking BSs sot23 siemens
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IXYS DS 145
Abstract: diode 14512 H
Text: ÖIXYS Mil 145*12 A3 MIO 145*12 A3 U m 145-12 A3 IGBT M odules lC25 = 160 A Short Circuit SOA Capability Square RBSOA ^ ces ” ^ ^ C E s a t t yP. = M il MID I ^ ^-2 V MDI E' : : 60—I- isÖL • i : E 72873 P relim in ary data S ym bo l C o n d itio n s
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OCR Scan
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PDF
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60--I-
D-68623
IXYS DS 145
diode 14512 H
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