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    Untitled

    Abstract: No abstract text available
    Text: Application Note from Europe for the World European PowerSemiconductor and Electronics Company Mounting of the IGBT-High-Power-Modules 140x190mm The contact surfaces of module and heatsink must be free from damage and contamination. A thin and uniform film of thermal compound should be applied to the contact area before mounting. A recommended method is applying the thermal compound with rollers or spatulas to the surface of the module or the heatsink. The quantity of thermal compound is sufficient if a small rim can be observed around the mounted module.


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    PDF 140x190mm D-59581 140x190

    FZ1200R33KF2C

    Abstract: igbt 3.3kv planar busbar design HIGH VOLTAGE DIODE 3.3kv FZ1500R33HE3 FZ1500R33HL3 the calculation of the power dissipation for the IGBT i300a IGBT FZ1200 BUSBAR calculation
    Text: High Power IGBT modules with improved mechanical performance and advanced 3.3kV IGBT3 chip technology Th. Schütze1 , J. Biermann1), R. Spanke 1), M. Pfaffenlehner2) 1 2 Infineon Technologies AG, Max-Planck-Straße, D-59581 Warstein, Germany Infineon Technologies AG, Am Campeon 1 - 12, D-85579 Neubiberg, Germany


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    PDF D-59581 D-85579 06K/kW FZ1500R33HE3 FZ1500R33HL3 FZ1200R33KF2C FZ1500R33HE3 FZ1200R33KF2C igbt 3.3kv planar busbar design HIGH VOLTAGE DIODE 3.3kv FZ1500R33HL3 the calculation of the power dissipation for the IGBT i300a IGBT FZ1200 BUSBAR calculation

    HP STEP RECOVERY DIODES

    Abstract: cibh-diode fz1500r33he3 A-9500 igbt module 1500A A9500 IGBT3 infineon HIGH VOLTAGE DIODE 3.3kv 3.3kv diode Biermann
    Text: CIBH Diode with Superior Soft Switching Behavior in 3.3kV Modules for Fast Switching Applications Jürgen Biermann, Infineon Technologies AG, Max-Planck-Strasse 5, D-59581 Warstein, Germany Manfred Pfaffenlehner, Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany


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    PDF D-59581 D-85579 HP STEP RECOVERY DIODES cibh-diode fz1500r33he3 A-9500 igbt module 1500A A9500 IGBT3 infineon HIGH VOLTAGE DIODE 3.3kv 3.3kv diode Biermann

    FZ1600R12KF4

    Abstract: IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb
    Text: power . Home Products IGBT 600V the News 1200V Contact Job Offers Company Search Site Content 1600V/1700V 2500V/3300V Sixpack Power Integrated Modules In Editorials future Low Loss. Half-Bridge Packages 50A BSM 50GB60DLC 75A BSM 75GB60DLC 100A BSM 100GB60DLC


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    PDF 600V/1700V 500V/3300V 50GB60DLC 75GB60DLC 100GB60DLC 150GB60DLC 200GB60DLC 300GB60DLC FZ1600R12KF4 IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb

    AN2008

    Abstract: AN2001-05 igbt simulation AN2008-03 AN-2008
    Text: Application Note, V1.0, 2008 AN2008-03 Thermische Ersatzschaltbilder ersetzt AN2001-05 Industrial Power Edition 2008-06-16 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2008. All Rights Reserved. LEGAL DISCLAIMER


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    PDF AN2008-03 AN2001-05 AN2008 AN2001-05 igbt simulation AN2008-03 AN-2008