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    14 MARK CODE TRANSISTOR SMD Search Results

    14 MARK CODE TRANSISTOR SMD Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    14 MARK CODE TRANSISTOR SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 BC847QAPN 45 V, 100 mA NPN/PNP general-purpose transistor 19 July 2013 Product data sheet 1. General description NPN/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits


    Original     		PDF BC847QAPN DFN1010B-6 OT1216) AEC-Q101

    SMD 6PIN IC MARKING CODE p

    Abstract: SMD 6PIN IC MARKING CODE 1G SMD 6PIN IC MARKING CODE marking code CB SMD ic K1 MARK 6PIN TRANSISTOR SMD MARKING CODE 2x SMD 6PIN IC MARKING CODE IP SMD transistor MARKING code 1g TRANSISTOR SMD MARKING CODE ce BFR94
    Text: BFS469L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.5 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS469L6 BFR460L3, BFR949L3) Sep-01-2003 SMD 6PIN IC MARKING CODE p SMD 6PIN IC MARKING CODE 1G SMD 6PIN IC MARKING CODE marking code CB SMD ic K1 MARK 6PIN TRANSISTOR SMD MARKING CODE 2x SMD 6PIN IC MARKING CODE IP SMD transistor MARKING code 1g TRANSISTOR SMD MARKING CODE ce BFR94

    SMD MARKING CODE 102c

    Abstract: marking code CB SMD tr2 TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE ce SMD 6PIN IC MARKING CODE p SMD 6PIN IC MARKING CODE marking code AC SMD ic K1 MARK 6PIN SMD 6PIN IC MARKING CODE 15 TRANSISTOR SMD MARKING CODE 2x 3
    Text: BFS466L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.0 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS466L6 BFR460L3, BFR360L3) Sep-01-2003 SMD MARKING CODE 102c marking code CB SMD tr2 TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE ce SMD 6PIN IC MARKING CODE p SMD 6PIN IC MARKING CODE marking code AC SMD ic K1 MARK 6PIN SMD 6PIN IC MARKING CODE 15 TRANSISTOR SMD MARKING CODE 2x 3

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 BC857QAS 45 V, 100 mA PNP/PNP general-purpose transistor 25 July 2014 Product data sheet 1. General description PNP/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC847QAS.


    Original     		PDF BC857QAS DFN1010B-6 OT1216) BC847QAS. BC847QAPN. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS.


    Original     		PDF BC847QAS DFN1010B-6 OT1216) BC857QAS. BC847QAPN. AEC-Q101

    PQMD12

    Abstract: No abstract text available
    Text: DF N1 10B -6 PQMD12 NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ 24 July 2013 Product data sheet 1. General description NPN/PNP double Resistor-Equipped Transistors RET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PQMD12 DFN1010B-6 OT1216) AEC-Q101 PQMD12

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS5230QA 30 V, 2 A PNP low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PDF PBSS5230QA DFN1010D-3 OT1215) PBSS4230QA. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS5130QA 30 V, 1 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PDF PBSS5130QA DFN1010D-3 OT1215) PBSS4130QA. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS5260QA 60 V, 1.7 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PDF PBSS5260QA DFN1010D-3 OT1215) PBSS4260QA. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS4260QA 60 V, 2 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PDF PBSS4260QA DFN1010D-3 OT1215) PBSS5260QA. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS4230QA 30 V, 2 A NPN low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PDF PBSS4230QA DFN1010D-3 OT1215) PBSS5230QA. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS4160QA 60 V, 1 A NPN low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PDF PBSS4160QA DFN1010D-3 OT1215) PBSS5160QA. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS5160QA 60 V, 1 A PNP low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PDF PBSS5160QA DFN1010D-3 OT1215) PBSS4160QA. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS4130QA 30 V, 1 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PDF PBSS4130QA DFN1010D-3 OT1215) PBSS5130QA. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: PC929J00000F Series PC929J00000F Series High Speed, Built-in Short Protection Circuit, Gate Drive SMD 14 pin ∗OPIC Photocoulper • Description ■ Agency approvals/Compliance PC929J00000F Series contains an IRED optically coupled to an OPIC chip. It is packaged in a Mini-flat, Half pitch type 14 pin .


    Original     		PDF PC929J00000F PC929J00000F UL1577, E64380 PC929) EN60747-5-2 VDE0884

    PC928

    Abstract: pc928j00000f PHOTOCOUPLER SERIES with gnd E64380 EN60747-5-2 VDE0884 pc928 application SMD-14 transistor PC928PYJ000F
    Text: PC928J00000F Series PC928J00000F Series Built-in Short Protection Circuit, Gate Drive SMD 14 pin ∗OPIC Photocoupler • Description ■ Agency approvals/Compliance PC928J00000F Series contains an IRED optically coupled to an OPIC chip. It is packaged in a Mini-flat, Half pitch type 14 pin .


    Original     		PDF PC928J00000F PC928J00000F UL1577, E64380 PC928) EN60747-5-2 D2-A06202EN PC928 PHOTOCOUPLER SERIES with gnd E64380 EN60747-5-2 VDE0884 pc928 application SMD-14 transistor PC928PYJ000F

    Untitled

    Abstract: No abstract text available
    Text: PC928J00000F Series PC928J00000F Series Built-in Short Protection Circuit, Gate Drive SMD 14 pin ∗OPIC Photocoupler • Description ■ Agency approvals/Compliance PC928J00000F Series contains an IRED optically coupled to an OPIC chip. It is packaged in a Mini-flat, Half pitch type 14 pin .


    Original     		PDF PC928J00000F PC928J00000F UL1577, E64380 PC928) EN60747-5-2 D2-A06202FEN

    MOSFET TRANSISTOR SMD MARKING CODE 11

    Abstract: NXP SMD TRANSISTOR MARKING CODE s1
    Text: DF N1 10B -6 PMDXB600UNE 20 V, dual N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMDXB600UNE DFN1010B-6 OT1216) MOSFET TRANSISTOR SMD MARKING CODE 11 NXP SMD TRANSISTOR MARKING CODE s1

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 PMDXB950UPE 20 V, dual P-channel Trench MOSFET 10 September 2013 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMDXB950UPE DFN1010B-6 OT1216)

    PC929

    Abstract: pc929 equivalent PC929PY PC929P E64380 pc929 using igbt rc1k RC 1K pc929 using igbt number V02H
    Text: PC929 Series PC929 Series High Speed, Built-in Short Protection Circuit, Gate Drive SMD 14 pin ∗OPIC Photocoulper • Description ■ Agency approvals/Compliance PC929 Series contains an IRED optically coupled to an OPIC chip. It is packaged in a Mini-flat, Half pitch type 14 pin .


    Original     		PDF PC929 UL1577 E64380 PC929) VDE0884) D2-A06301EN pc929 equivalent PC929PY PC929P E64380 pc929 using igbt rc1k RC 1K pc929 using igbt number V02H

    PC929

    Abstract: pc929 equivalent pc929 using igbt number PC929PY SMD-14 transistor PHOTOCOUPLER SERIES with gnd E64380 PC929P V02H VDE0884
    Text: PC929 Series PC929 Series High Speed, Built-in Short Protection Circuit, Gate Drive SMD 14 pin ∗OPIC Photocoulper • Description ■ Agency approvals/Compliance PC929 Series contains an IRED optically coupled to an OPIC chip. It is packaged in a Mini-flat, Half pitch type 14 pin .


    Original     		PDF PC929 UL1577, E64380 PC929) VDE0884) D2-A06302EN pc929 equivalent pc929 using igbt number PC929PY SMD-14 transistor PHOTOCOUPLER SERIES with gnd E64380 PC929P V02H VDE0884

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0B -6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 10 December 2014 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF NX7002BKXB DFN1010B-6 OT1216)

    PC928

    Abstract: pc928 application E64380 V02H VDE0884 SMD-14 transistor RC1K
    Text: PC928 Series PC928 Series Built-in Short Protection Circuit, Gate Drive SMD 14 pin ∗OPIC Photocoupler • Description ■ Agency approvals/Compliance PC928 Series contains an IRED optically coupled to an OPIC chip. It is packaged in a Mini-flat, Half pitch type 14 pin .


    Original     		PDF PC928 UL1577, E64380 PC928) VDE0884) D2-A06202EN pc928 application E64380 V02H VDE0884 SMD-14 transistor RC1K

    Untitled

    Abstract: No abstract text available
    Text: ACPL-8x7 Multi-Channel Full-Pitch Phototransistor Optocoupler Data Sheet Description Features The ACPL-827 is a DC-input dual channel full-pitch phototransistor optocoupler which contains two light emitting diode optically coupled to two separate transistor. It is packaged in a 8-pin DIP package.


    Original     		PDF ACPL-827 ACPL-847 16-pin AV01-0530EN AV01-0612EN