1763S
Abstract: RFM4N35 RFM4N40 RFP4N35 RFP4N40
Text: □ 1. DE 13fl7SDfll 00 10125 7 38/5081 G É SOLID STATE Standard Power MOSFETs 0 1E 18125 _ RFM4N35, RFM4N40, RFP4N35, RFP4N40 D File Number 1491 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM
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13fl7SDfll
RFM4N35,
RFM4N40,
RFP4N35,
RFP4N40
RFM4N35
RFM4N40
RFP4N35
RFP4N40*
92CS-37053
1763S
RFP4N40
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GES5815
Abstract: GES5818 17975 GES5316 GES5616 GES5814 GES5816 GES5817 GES5819
Text: G □1 E SOLID STATE DE I 3fl7SDfll 0D17T74 3 01E 17974 3875081 G E SOLID STATE D T - ¿ > 7 -2-/ Signal Transistors_ GES5814, GES5815, GES5816 GES5817, GES5818, GES5819 Silicon Transistors Features: • Excellent gain linearity over wide range of collector current: ¿ 5 0 0 mA
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GES5814,
GES5815,
GES5816
GES5817,
GES5818,
GES5819
85tfRH
GES5816,
GES5815
GES5818
17975
GES5316
GES5616
GES5814
GES5817
GES5819
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3N188
Abstract: 3N190 3N189 3N191
Text: □1 SOLID S T A T E DEJ3Ö750Ö1 0 0 1 1 D E 3 fl ^ 7 T - - 2 .7 3N188-3N191 3N188-3N191 Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS • Very High Input impedance • High Gate Breakdown 3N190-3N191 • Zener Protected Gate 3N188-3N189
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3N188-3N191
3N188
3N189
3N190,
3N191
10sec)
300mW
300ns;
3N190
3N189
3N191
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GES2222
Abstract: No abstract text available
Text: Ql SOLID STATE Ö F |3fl7S 0fil 3875081 G E SOLID STATE □ 0 1 7 clt.a 7 01E 17962 D 3^1 Signal Transistors 1 GES2221, GES2222, MPS2222, PN2222 Silicon Transistors Features: • Performance comparable to hermetic units * High Gain ■ Low VCE SAT ■ High Frequency
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GES2221,
GES2222,
MPS2222,
PN2222
GES2222
MPS2222
GES2221
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RFL1N20L
Abstract: RFP2N20L RFL1N18L RFP2N18L
Text: ]>ËÏ 3Ô7SDS1 DD1Ö435 5 T ~ D T “3 ? ' 0 9 '3875081 G E SOLID STATELO! Logic-Level Power MOSFETs _ 5 !_ RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L File Number 1511 N-Channel Logic Level Power Field-Effect Transistors L2 FET
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307SG01
RFL1N18L,
RFL1N20L,
RFP2N18L,
RFP2N20L
RFL1N18L
RFL1N20L
RFP2N18L
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