MX25L1635D
Abstract: MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25
Text: MX25L1635D MX25L1635D DATASHEET P/N: PM1374 1 REV. 1.5, OCT. 01, 2008 MX25L1635D Contents FEATURES . 5
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MX25L1635D
PM1374
MX25L1635D
MX25L163
mx25l1635
MX25L1635DM
MX25L1635DM2I-12G
mx25l1
MX25L1635DM2I
IN3064
MX25L1605D
mx25
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V850E/IA1
Abstract: No abstract text available
Text: User’s Manual TM V850E/IA1 32-Bit Single-Chip Microcontrollers Hardware µPD703116 µPD703116 A µPD703116(A1) µPD70F3116 µPD70F3116(A) µPD70F3116(A1) Document No. U14492EJ3V0UD00 (3rd edition) Date Published February 2003 N CP(K) Printed in Japan
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V850E/IA1
32-Bit
PD703116
PD703116
PD70F3116
PD70F3116
U14492EJ3V0UD00
U14492EJ3V0UD
V850E/IA1
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Untitled
Abstract: No abstract text available
Text: MX25L1673E MX25L1673E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1912 1 REV. 1.2, JAN. 14, 2014 MX25L1673E Contents 1. FEATURES. 4
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MX25L1673E
PM1912
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AT49BV320D
Abstract: AT49BV320DT SA70 AT49BV
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3581D
AT49BV320D
AT49BV320DT
SA70
AT49BV
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48C20
Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout
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3608C
48C20
SA125
AT49BV640DT-70CU
AT49BV640D
AT49BV640DT
AT49BV640D-70CU
SWITCH SA125
278000 eprom
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S 3590A
Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout
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CompactCellTM Static RAM
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
limitation02
CompactCellTM Static RAM
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GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
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M15451E
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can
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PD29F064115-X
64M-BIT
16-BIT
PD29F064115-X
M15451E
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Untitled
Abstract: No abstract text available
Text: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3
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W28J320B/T
16/4M
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Untitled
Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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Untitled
Abstract: No abstract text available
Text: Preliminary W28F321BT/TT 32MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide
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W28F321BT/TT
32MBIT
W28F321,
W28F321
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Hitachi DSA0094
Abstract: IEEE754 SH7708 SH7708R SH7708S SH7718R
Text: SH7718R Hardware Manual ADE-602-103 Rev. 1.0 10/12/98 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the
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SH7718R
ADE-602-103
SH7708R
Hitachi DSA0094
IEEE754
SH7708
SH7708S
SH7718R
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LHF00L14
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LHF00L14 Flash Memory 32M 2MB x 16 (Model No.: LHF00L14) Spec No.: EL163055 Issue Date: March 15, 2004 LHF00L14 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,
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LHF00L14
LHF00L14)
EL163055
LHF00L14
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740-0007
Abstract: EN29GL064 6A000
Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and
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EN29GL064
8192K
4096K
16-bit)
740-0007
EN29GL064
6A000
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th50vsf1400
Abstract: BA30
Text: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory
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50VSF1400/1401ACXB
TH50VSF1400/1401ACXB
152-bit
216-bit
48-pin
50VSF1400/1401
th50vsf1400
BA30
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Untitled
Abstract: No abstract text available
Text: SEE NEW DESIGN RECOMMENDATIONS in te i REFERENCE ONLY 28F016SA FlashFile MEMORY Includes Commercial and Extended Temperature Specifications Revolutionary Architecture — Pipelined Command Execution — Program during Erase — Command Superset of Intel
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28F016SA
28F008SA
56-Lead,
28F016SA
28F032SA
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Untitled
Abstract: No abstract text available
Text: in te l 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY Effective Zero Wait-State Performance up to 33 MHz — Synchronous Pipelined Reads Backwards-Compatible with 28F008SA Command-Set SmartVoltage Technology — User-Selectable 3.3V or 5V Vqc
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28F016XS
16-MBIT
28F008SA
56-Lead
128-Kbyte
16-Mbit
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Untitled
Abstract: No abstract text available
Text: Ä M Ä K I I 0 M F @ [^ O ii]Ä ¥ 0 ® M VS28F016XS, MS28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY • VS28F016XS 40°C to +125°C — QML Certified — SE2 Grade ■ 0.25 MB/sec Write Transfer Rate ■ MS28F016XS 55°C to 125°C
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VS28F016XS,
MS28F016XS
16-MBIT
VS28F016XS
MS28F016XS
VE28F008,
M28F008
28F016SA
56-Lead
128-Kbyte
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Untitled
Abstract: No abstract text available
Text: int ! PRELIMINARY BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 28F004S5, 28F008S5, 28F016S5 Includes Commercial and Extended Temperature Specifications SmartVoltage Technology — Smart 5 Flash: 5 V Vcc and 5 V or 12 V V p p High-Performance
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28F004S5,
28F008S5,
28F016S5
40-Lead
44-Lead
64-Kbyte
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Untitled
Abstract: No abstract text available
Text: in te l A P iM ! O M IR S K E fflA T r iK S lR ] DD28F032SA 32-MBIT 2 MBIT X 16, 4 MBIT X 8 FlashFile MEMORY • User-Selectable 3.3V or 5V Vcc ■ User-Configurable x8 or x16 Operation ■ 70 ns Maximum Access Time ■ 0.43 MB/sec Write Transfer Rate
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DD28F032SA
32-MBIT
28F016SA
56-Lead,
DD28F032SA
32-Mbit
3-30i
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY in te i SERIES 2 FLASH MEMORY CARDS ÌM C002FLSA, ÌM C004FLSA, ÌM C010FLSA, ÌM C020FLSA 2, 4 ,1 0 and 20 Megabyte Capacities Intel FlashFile Memory Architecture PCMCIA 2.1/J El DA 4.1 68-Pin Standard — Hardwired Card Information Structure
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C002FLSA,
C004FLSA,
C010FLSA,
C020FLSA
68-Pin
28F008SA
AP-361
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Untitled
Abstract: No abstract text available
Text: intei 28F016SV 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFileTM MEMORY Sm artVoltage Technology — User-Selectable 3.3V or 5V V cc -U s e r-S e le c ta b le 5V or 12V Vpp 65 ns Access Time 1 Million Erase Cycles per Block 30.8 M B /sec Burst W rite Transfer Rate
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28F016SV
16-MBIT
28F016SA,
28F008SA
28F008SA
56-Lead
4fl2bl75
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Untitled
Abstract: No abstract text available
Text: PRODUCT PREVIEW BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 28F004S3, 28F008S3, 28F016S3 Includes Commercial and Extended Temperature Specifications • SmartVoltage Technology — Smart 3 Flash: 2.7V Read-Only or 3.3V Vcc and 3.3V or 12V VPP
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28F004S3,
28F008S3,
28F016S3
40-Lead
44-Lead
64-Kbyte
16-Mbit
16-Mbit
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