1206-8
Abstract: No abstract text available
Text: Si5441BDC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.045 @ VGS = −4.5 V −6.1 0.052 @ VGS = −3.6 V −5.7 0.080 @ VGS = −2.5 V −4.6 D TrenchFETr Power MOSFET Qg (Typ) 11.5
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Si5441BDC
Si5441BDC-T1--E3
08-Apr-05
1206-8
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SI4430BDY-E3
Abstract: S3550 SI4430BDY-T1-E3 Si4430BDY
Text: Si4430BDY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.006 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFETS D 100% Rg Tested Qg (Typ) 24 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D
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Si4430BDY
Si4430BDY--E3
Si4430BDY-T1--E3
S-42242--Rev.
13-Dec-04
SI4430BDY-E3
S3550
SI4430BDY-T1-E3
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Untitled
Abstract: No abstract text available
Text: Si5441BDC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.045 @ VGS = −4.5 V −6.1 0.052 @ VGS = −3.6 V −5.7 0.080 @ VGS = −2.5 V −4.6 D TrenchFETr Power MOSFET Qg (Typ) 11.5
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Si5441BDC
Si5441BDC-T1--E3
S-42240--Rev.
13-Dec-04
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Si5433BDC
Abstract: marking code BL
Text: Si5433BDC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.037 @ VGS = −4.5 V −6.7 0.050 @ VGS = −2.5 V −5.9 0.070 @ VGS = −1.8 V −5.0 D TrenchFETr Power MOSFET Qg (Typ) 15 1206-8 ChipFETr
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Si5433BDC
Si5433BDC-T1--E3
08-Apr-05
marking code BL
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Untitled
Abstract: No abstract text available
Text: Si5441BDC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.045 @ VGS = −4.5 V −6.1 0.052 @ VGS = −3.6 V −5.7 0.080 @ VGS = −2.5 V −4.6 D TrenchFETr Power MOSFET Qg (Typ) 11.5
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Si5441BDC
Si5441BDC-T1--E3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SiP21102 Vishay Siliconix New Product 150-mA Ultra Low-Noise LDO Regulator With Discharge Option FEATURES D D D D D D D D D D D D D D D Output, Auto-Discharge In Shutdown Mode D Fixed 1.2, 1.8, 2.0, 2.2, 2.5, 2.6, 2.7, 2.8, 2.85, 2.9, 3.0, 3.3, 3.5, 3.6, 5.0-V Output Voltage Options
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SiP21102
150-mA
SC70-5
10-Hz
100-kHz
110-mA
300-mA
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RF800 flux
Abstract: RF800 RF800 FLUX DATA SHEET CTLB053705-019 CTLB053705-020
Text: Qualification Test Report 501-601 09Apr09 Rev B Fully Buffered and DDR3 DIMM Soldertail Sockets 1. INTRODUCTION 1.1. Purpose Testing was perform ed on the Tyco Electronics Fully Buffered and DDR3 Dual In-Line Mem ory Module DIMM Soldertail Sockets to determ ine their conform ance to the requirem ents of Product Specification
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09Apr09
13Dec04
09Feb05.
CTLB053705-019
CTLB053705-020
RF800 flux
RF800
RF800 FLUX DATA SHEET
CTLB053705-019
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TSOP34456SB1F
Abstract: tsal
Text: TSOP344.SB1F Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP344.SB1F - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP344.
D-74025
13-Dec-04
TSOP34456SB1F
tsal
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TO-252 N-channel power MOSFET
Abstract: No abstract text available
Text: SUD50N06-08H New Product Vishay Siliconix N-Channel 60-V D-S 175 _C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)c Qg (Typ) 60 0.0078 @ VGS = 10 V 93 94 D D D D TrenchFETr Power MOSFET 175 _C Junction Temperature 100% Rg Tested High Threshold at High Temperature
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SUD50N06-08H
O-252
SUD50N06-08H--E3
08-Apr-05
TO-252 N-channel power MOSFET
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SUD50N06-08H
Abstract: No abstract text available
Text: SUD50N06-08H New Product Vishay Siliconix N-Channel 60-V D-S 175 _C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)c Qg (Typ) 60 0.0078 @ VGS = 10 V 93 94 D D D D TrenchFETr Power MOSFET 175 _C Junction Temperature 100% Rg Tested High Threshold at High Temperature
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SUD50N06-08H
O-252
SUD50N06-08H--E3
S-42243--Rev.
13-Dec-04
SUD50N06-08H
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Si5433BDC
Abstract: No abstract text available
Text: Si5433BDC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.037 @ VGS = −4.5 V −6.7 0.050 @ VGS = −2.5 V −5.9 0.070 @ VGS = −1.8 V −5.0 D TrenchFETr Power MOSFET Qg (Typ) 15 1206-8 ChipFETr
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Si5433BDC
Si5433BDC-T1--E3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Tape Information Vishay Siliconix PLCC: 28-LEAD 4.0 " 0.1 See Note 1 2.0 " 0.1 See Note 4 Ĭ1.5 + 0.1/−0.0 Dia. A 1.75 " 0.1 0.3 R Max. 11.5 " 0.1 See Note 4 24.0 " 0.3 Section A-A A 0.5 Radius Typkcal 1.5 Min. 16.0 " 0.1 NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2 mm.
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28-LEAD
E-02180--Rev.
13-Dec-04
93-5235-x
10-Dec-04
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mv silicon mp3 player
Abstract: No abstract text available
Text: SiP21101 Vishay Siliconix New Product 150-mA Ultra Low-Noise LDO Regulator With Discharge Option FEATURES D Output, Auto-Discharge In Shutdown Mode D Fixed 1.2, 1.8, 2.0, 2.2, 2.5, 2.6, 2.7, 2.8, 2.85, 2.9, 3.0, 3.3, 3.5, 3.6, 5.0-V Output Voltage Options
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SiP21101
150-mA
Dropout--130
Noise--30
10-Hz
100-kHz
110-mA
300-mA
mv silicon mp3 player
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p-channel mosfet BL
Abstract: Si5433BDC
Text: Si5433BDC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.037 @ VGS = −4.5 V −6.7 0.050 @ VGS = −2.5 V −5.9 0.070 @ VGS = −1.8 V −5.0 D TrenchFETr Power MOSFET Qg (Typ) 15 1206-8 ChipFETr
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Si5433BDC
Si5433BDC-T1--E3
S-42241--Rev
13-Dec-04
p-channel mosfet BL
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mv silicon mp3 player
Abstract: No abstract text available
Text: SiP21101 Vishay Siliconix New Product 150-mA Ultra Low-Noise LDO Regulator With Discharge Option FEATURES D Output, Auto-Discharge In Shutdown Mode D Fixed 1.2, 1.8, 2.0, 2.2, 2.5, 2.6, 2.7, 2.8, 2.85, 2.9, 3.0, 3.3, 3.5, 3.6, 5.0-V Output Voltage Options
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SiP21101
150-mA
Dropout--130
Noise--30
10-Hz
100-kHz
110-mA
300-mA
mv silicon mp3 player
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Untitled
Abstract: No abstract text available
Text: SiP21102 Vishay Siliconix New Product 150-mA Ultra Low-Noise LDO Regulator With Discharge Option FEATURES D D D D D D D D D D D D D D D Output, Auto-Discharge In Shutdown Mode D Fixed 1.2, 1.8, 2.0, 2.2, 2.5, 2.6, 2.7, 2.8, 2.85, 2.9, 3.0, 3.3, 3.5, 3.6, 5.0-V Output Voltage Options
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SiP21102
150-mA
Dropout--130
Noise--75
10-Hz
100-kHz
110-mA
300-mA
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2032f
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST REVISIONS AD 00 ALL RIGHTS RESERVED. LTR DESCRIPTION N 0.69 + 0.06 [.027+.0025] DATE EC 0G3C 0676 04 DWN 13DEC04 APVD BSV JO D D 2.12 [.083] 1.27
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13DEC04
100CL,
31MAR2000
2032f
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AK marking
Abstract: marking AK TYCO electronics marking code date
Text: 8 T H IS DRAWING IS U N P U B LIS H E D . 7 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. COPYRIGHT - BY TYCO ELECTRONIC5 CORPORATION. 0.51 D A REF 5.28 [,208]MAX SS 7 7 + 1.02±0.08 B RECOMMENDED PC BOARD PAD PATTERN 0.20 [.008] THICK STENCIL A AMP 4605 REV 31MAR2000
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31MAR2000
25/im
PERTA728-1
19JAN01
19JAN01
AK marking
marking AK
TYCO electronics marking code date
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Untitled
Abstract: No abstract text available
Text: 8 6 THIS DRAWING IS UNPUBLISHED. §@P¥RI§HT IS HFlIffaBtflin FETCH HPlMBIflffiHTMN BY TYCO elec W o M S ^ -H 9 - RIGHTS RESERVED- LOG DIST AD 00 REVISIONS p LTR A H O U S I N G MATERIA L: C O L O R : N A TU R A L . A A •DIM A CONTACT + 0 .0 3 4 0.00
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13DEC04
31MAR2000
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Untitled
Abstract: No abstract text available
Text: x > □ o AMP 4805 REV 31MAR2000 o X r~ > — I m o 00 o /4 - j - - b - - A - — + - —© -© —© o —© - —© - 8 F T T “T T T T “t T T T “t T T T “t T T T “t T T T “t T T T “t T T T “t T T T “t 00 -© - —© - T T “t A J / i L
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31MAR2000
13DEC04
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Untitled
Abstract: No abstract text available
Text: 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 7 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. AD BY TYCO ELECTRONIC5 CORPORATION. DIST REVISIONS 00 LTR A A A D A A 1 0 .0 0 HOUSING MATERIAL: CONTACT MATERIAL: LIQUID CRYSTAL POLYMER. PHOSPHOR COLOR: DESCRIPTION
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13DEC
13DEC04
13DEC04
MAR2000
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Untitled
Abstract: No abstract text available
Text: 4 T H IS DRAW ING IS U N P U B L IS H E D . 3 RE LEAS E D FOR ALL COPYRIGHT PU B LIC A TIO N RIG HTS LOC RESERVED . AD BY TYCO ELECTRONICS CORPORATION. 2.12 [•083] "1 TYP REVISIONS D IS T 00 LTR 0 .6 9 + 0 .0 5 [.027+.002] TYP 1 DATE D E S C R IP T IO N
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13DEC04
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Untitled
Abstract: No abstract text available
Text: 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T - By FO R 6 4 5 2 3 P U B L IC A T IO N RIG HTS REVISIONS D IS T R E S ER VE D . 00 - LTR D E S C R IP T IO N C1 MATERIAL: FINISH: REVISED PER HOUSING: POLYESTER. COLOR: CONTACT PHOSPHOR BRONZE.
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19JUL12
13DEC04
13DEC04
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