74641
Abstract: SUP90N06-5M0P
Text: SUP90N06-5m0P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.005 at VGS = 10 V 90d 105 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUP90N06-5m0P
O-220AB
SUP90N06-5m0P-E3
08-Apr-05
74641
SUP90N06-5M0P
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Untitled
Abstract: No abstract text available
Text: Page 1 of 2 Home|Sign In|Contact Us Go Plastic Body ZIF Connectors PART NUMBER: 127050-0204 Image Disclaimer: Please use Customer Drawing for design activity: line art and other pictures are general representations of product dimensions. Where Sold Europe, Americas
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PROCESS\BAE\08052007\ITTC\datasheet4
13-Aug-07
MIL-STD-202
DLM1-156P
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Untitled
Abstract: No abstract text available
Text: Page 1 of 2 Home|Sign In|Contact Us Go Combo D Connectors PART NUMBER: DAMMG3C3PJ Where Sold Americas, Asia Pacific, Europe Product Group D-Subminiature Product Sub-Family D-Sub Combo Component Type Connector Application Type Military/High Reliability Cable or PC Board
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Mil-PRF-24308
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PROCESS\BAE\08052007\ITTC\datasheet108.
13-Aug-07
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Untitled
Abstract: No abstract text available
Text: Page 1 of 2 Home|Sign In|Contact Us Go Plastic Body ZIF Connectors PART NUMBER: 127050-0208 Image Disclaimer: Please use Customer Drawing for design activity: line art and other pictures are general representations of product dimensions. Where Sold Europe, Asia Pacific
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PROCESS\BAE\08052007\ITTC\datasheet5
13-Aug-07
MIL-STD-202
DLM1-156R
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Untitled
Abstract: No abstract text available
Text: Page 1 of 1 Home|Sign In|Contact Us Go Standard D Machined PART NUMBER: DCMC37PJK87 Where Sold Asia Pacific, Europe, Americas Product Group D-Subminiature Product Sub-Family D-Sub Standard Component Type Connector Application Type Commercial Cable or PC Board
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DCMC37PJK87
Mil-PRF-24308
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PROCESS\BAE\08052007\ITTC\datasheet129.
13-Aug-07
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Untitled
Abstract: No abstract text available
Text: Page 1 of 2 Home|Sign In|Contact Us Go Standard D Stamped PART NUMBER: DBWE25S1G Image Disclaimer: Please use Customer Drawing for design activity: line art and other pictures are general representations of product dimensions. Where Sold Americas, Asia Pacific, Europe
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DBWE25S1G
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PROCESS\BAE\08052007\ITTC\datasheet121.
13-Aug-07
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damam15s
Abstract: No abstract text available
Text: Page 1 of 1 Home|Sign In|Contact Us Go Standard D Machined PART NUMBER: DAMAM15S Where Sold Americas, Asia Pacific, Europe Product Group D-Subminiature Product Sub-Family D-Sub Standard Component Type Connector Application Type Military/High Reliability
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DAMAM15S
Mil-PRF-24308
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PROCESS\BAE\08052007\ITTC\datasheet30
13-Aug-07
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XD 105 94V-0
Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0002-1102
XD 105 94V-0
BFM 41A
Zener diode smd marking code 39c
transistor 1BW
GENERAL SEMICONDUCTOR TVS
CJ 53B 30 097
transistor 110 3CG
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SUM90N10
Abstract: 74643 sum90n10-8m2p
Text: SUM90N10-8m2P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 100 0.0082 at VGS = 10 V 90d 97 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUM90N10-8m2P
O-263
SUM90N10-8m2P-E3
18-Jul-08
SUM90N10
74643
sum90n10-8m2p
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Untitled
Abstract: No abstract text available
Text: SUP90N10-8m8P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUP90N10-8m8P
O-220AB
SUP90N10-8m8P-E3
18-Jul-08
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si4626
Abstract: A3514 Si4626DY
Text: New Product Si4626DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0036 at VGS = 10 V 30 0.0048 at VGS = 4.5 V 26.3 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS COMPLIANT 34 nC
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Si4626DY
Si4626DY-T1-E3
08-Apr-05
si4626
A3514
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Si7662
Abstract: No abstract text available
Text: New Product Si7662DP Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 60 0.0105 at VGS = 10 V 32g 36 nC • Extremely Low Qgd WFET Technology for Reduced dV/dt, Qgd and Shoot-Through • 100 % Rg Tested
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Si7662DP
Si7662DP-T1-E3
18-Jul-08
Si7662
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TIP 122 transistor
Abstract: warpage MARK NXK
Text: Package Information Vishay Siliconix PowerPAK MLP55-28L CASE OUTLINE 0.15 C A A D C A D/2 N 0.15 C B 3 B b N-1 N 0.10 M C A B 0.05 M C P1 ID R0.30 E/2 1 5 1 2 L e E2/2 E E2 4 5 A1 A3 0.10 C NxK D2/2 D2 0.08 C SIDE VIEW TOP VIEW BTM VIEW C C CL CL 3 e e b
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MLP55-28L
BSC94.
T-07459
13-Aug-07
TIP 122 transistor
warpage
MARK NXK
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Si4382DY
Abstract: No abstract text available
Text: SPICE Device Model Si4382DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4382DY
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Page 1 of 1 Home|Sign In|Contact Us Go Standard D Stamped PART NUMBER: DC37PK87 Where Sold Americas, Asia Pacific, Europe Product Group D-Subminiature Product Sub-Family D-Sub Standard Component Type Connector Application Type Commercial Cable or PC Board
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DC37PK87
Mil-PRF-24308
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PROCESS\BAE\08052007\ITTC\datasheet122.
13-Aug-07
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SUM90N06-4M4P
Abstract: No abstract text available
Text: SUM90N06-4m4P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0044 at VGS = 10 V 90d 105 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUM90N06-4m4P
O-263
SUM90N06-4m4P-E3
18-Jul-08
SUM90N06-4M4P
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30BQ040
Abstract: ACT4075 ACT4075YH ACT4075YH-T ECJ-3YB1C226M EEFCD0J470XR SK34
Text: ACT4075 Rev PrA, 13-Aug-07 Advanced Product Information – All Information Subject to Change Wide Input 2.5A Step Down Converter FEATURES • GENERAL DESCRIPTION The ACT4075 is a current-mode step-down DC/DC converter that generates up to 2.5A output current
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ACT4075
13-Aug-07
ACT4075
410kHz
ISOBCD30
30BQ040
ACT4075YH
ACT4075YH-T
ECJ-3YB1C226M
EEFCD0J470XR
SK34
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XR1006-BD
Abstract: DM6030HK TS3332LD XR1006 XR1006-BD-000V XR1006-BD-EV1
Text: 18.0-25.0 GHz GaAs MMIC Receiver August 2007 - Rev 13-Aug-07 Features Chip Device Layout R1006-BD Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.5 dB Noise Figure 15.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing
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R1006-BD
MIL-STD-883
XR1006-BD-000V
XR1006-BD-EV1
XR1006
XR1006-BD
DM6030HK
TS3332LD
XR1006-BD-000V
XR1006-BD-EV1
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Si4803DY
Abstract: SI4803 Si4803DY-T1-E3
Text: New Product Si4803DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 20 ID (A) 0.065 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio Qg (Typ) 4.5 nC
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Si4803DY
Si4803DY-T1-E3
08-Apr-05
SI4803
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Untitled
Abstract: No abstract text available
Text: SUP90N10-8m8P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUP90N10-8m8P
O-220AB
SUP90N10-8m8P-E3
08-Apr-05
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VJ C0G NPO Dielectric
Abstract: capacitor Vishay VJ 1206 VJ0805 VJ1206 VJ1210
Text: VJ HVArc Guard C0G NP0 Vishay Vitramon Surface Mount Multilayer Ceramic Capacitors that Prohibit Surface Arc-over in High Voltage Applications FEATURES For this Worldwide Patent-Pending Technology • Surface-mountable, precious metal technology, wet build process MLCC that protect against RoHS
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08-Apr-05
VJ C0G NPO Dielectric
capacitor Vishay VJ 1206
VJ0805
VJ1206
VJ1210
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IHLP-1616BZ-11
Abstract: No abstract text available
Text: IHLP-1616BZ-11 Vishay Dale Low Profile, High Current Inductor FEATURES • Shielded construction • Frequency range up to 1.0 MHz RoHS • Lowest DCR/µH, in this package size COMPLIANT • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite construction
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IHLP-1616BZ-11
08-Apr-05
IHLP-1616BZ-11
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360010-1
Abstract: No abstract text available
Text: 4 TH IS D R AW IN G IS U N P U B LIS H E D . RELEASED FOR P U B LIC A T IO N ALL C O P Y R IG H T BY 1TCO ELECTRONICS 2 3 R IG H TS -, - REVISIONS RESERVED. AF C O R P O R A TIO N . 50 D E S C R IP T IO N AB4 REV PER ECR 0 7-0 1 9 03 9 13AUG07 JR PD D D
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13AUG07
31MAR2000
360010-1
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FK11ZIBW-007-NT30G-50
Abstract: No abstract text available
Text: 1 NOTES; THIRD ANGLE PROJ. R E V IS IO N S • 1. MATERIALS BODY A N D F I N I S H E S ! I N M I C R O - 1N C H E S = B R A S S P E R 0 0 - B - 626 . A L L O Y 3 6 0 , I / 2 H O R E Q U I V A L E N T ) N I C K E L PL. 100 M I N . T H I C K O V E R C O P P E R S T R I K E
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I88A/U,
316/U)
7-NT30G-50
FK11ZIBW-007-NT30G-50
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