Untitled
Abstract: No abstract text available
Text: 1 2 TO -24 7 D3PAK 1 - Cathode 2 2 - Anode 1 APT15DS60BG 600V APT15DS60SG 600V 1 2 1 2 *G 13A 13A Denotes RoHS Compliant, Pb Free Terminal Finish. 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS
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APT15DS60BG
APT15DS60SG
O-247
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30A 600V Ultrafast Diode APT TO-247
Abstract: APT15DS60BG APT15DS60B APT15DS60SG APT6017BLL
Text: 1 2 TO -24 7 D3PAK 1 - Cathode 2 2 - Anode 1 1 2 1 2 APT15DS60BG 600V APT15DS60SG 600V *G 13A 13A Denotes RoHS Compliant, Pb Free Terminal Finish. 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS
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APT15DS60BG
APT15DS60SG
O-247
30A 600V Ultrafast Diode APT TO-247
APT15DS60B
APT6017BLL
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Untitled
Abstract: No abstract text available
Text: 1 2 TO -24 7 D3PAK 1 - Cathode 2 2 - Anode 1 1 2 1 2 APT15DS60B APT15DS60S 600V 600V 13A 13A 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times
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APT15DS60B
APT15DS60S
O-247
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APT15DS60B
Abstract: APT15DS60S APT6017BLL
Text: 1 2 TO -24 7 D3PAK 1 - Cathode 2 2 - Anode 1 1 2 1 2 APT15DS60B APT15DS60S 600V 600V 13A 13A 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times
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APT15DS60B
APT15DS60S
O-247
APT15DS60B
APT15DS60S
APT6017BLL
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P13NK60Z
Abstract: p13nk60zfp w13nk60z B13NK60Z w13nk60z equivalent p13nk60 P13NK60Z diagram w13nk60 STW13NK60Z STB13NK60Z
Text: STP13NK60Z/FP, STB13NK60Z STB13NK60Z-1, STW13NK60Z N-CHANNEL 600V-0.48Ω-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP13NK60Z STP13NK60ZFP STB13NK60Z STB13NK60Z-1 STW13NK60Z • ■ ■ ■ ■ ■ VDSS RDS on 600 600
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STP13NK60Z/FP,
STB13NK60Z
STB13NK60Z-1,
STW13NK60Z
00V-0
8-13A
O-220/FP/D2PAK/I2PAK/TO-247
STP13NK60Z
STP13NK60ZFP
P13NK60Z
p13nk60zfp
w13nk60z
B13NK60Z
w13nk60z equivalent
p13nk60
P13NK60Z diagram
w13nk60
STW13NK60Z
STB13NK60Z
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STW13NB60
Abstract: No abstract text available
Text: STW13NB60 STH13NB60FI N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218 PowerMESH MOSFET TYPE V DSS R DS on ID STW13NB60 STH13NB60FI 600 V 600 V <0.54 Ω <0.54 Ω 13 A 8.6 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STW13NB60
STH13NB60FI
O-247/ISOWATT218
STW13NB60
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p13nk60
Abstract: p13nk60zfp P13NK60Z w13nk60z w13nk60 B13NK60 STW13NK60Z w13nk60z equivalent B13nk60z hbm 216
Text: STB13NK60Z - STB13NK60Z-1 STP13NK60Z/FP - STW13NK60Z N-CHANNEL 600V - 0.48Ω - 13A - TO-220/FP - D²/I²PAK - TO-247 Zener-Protected SuperMESH MOSFET General features VDSS RDS on ID Pw 600 600 600 600 600 <0.55 Ω <0.55 Ω <0.55 Ω <0.55 Ω <0.55 Ω
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STB13NK60Z
STB13NK60Z-1
STP13NK60Z/FP
STW13NK60Z
O-220/FP
O-247
STB13NK60Z
STP13NK60ZFP
STP13NK60Z
p13nk60
p13nk60zfp
P13NK60Z
w13nk60z
w13nk60
B13NK60
STW13NK60Z
w13nk60z equivalent
B13nk60z
hbm 216
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STH13NB60FI
Abstract: STW13NB60
Text: STW13NB60 STH13NB60FI N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218 PowerMESH MOSFET TYPE V DSS R DS on ID STW13NB60 STH13NB60FI 600 V 600 V <0.54 Ω <0.54 Ω 13 A 8.6 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY
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STW13NB60
STH13NB60FI
O-247/ISOWATT218
STH13NB60FI
STW13NB60
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STH13NB60FI
Abstract: STW13NB60
Text: STW13NB60 STH13NB60FI N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218 PowerMESH MOSFET TYPE V DSS R DS on ID STW13NB60 STH13NB60FI 600 V 600 V <0.54 Ω <0.54 Ω 13 A 8.6 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY
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STW13NB60
STH13NB60FI
O-247/ISOWATT218
STH13NB60FI
STW13NB60
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W13NB60
Abstract: h13nb60fi H13NB60 13nb60 STW13NB60 STH13NB60FI T218 sth13nb60fp BR 35 600-V H13NB60F
Text: STW13NB60 STH13NB60FI N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218 PowerMESH MOSFET TYPE V DSS R DS on ID ST W13NB60 ST H13NB60FI 600 V 600 V <0.54 Ω <0.54 Ω 13 A 8.6 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY
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STW13NB60
STH13NB60FI
O-247/ISOWATT218
W13NB60
H13NB60FI
W13NB60
h13nb60fi
H13NB60
13nb60
STW13NB60
STH13NB60FI
T218
sth13nb60fp
BR 35 600-V
H13NB60F
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transistor 12n60c
Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design
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ISOPLUS247TM
ISOPLUS247TM
PLUS247TM-package
FBO16-08N
FBE22-06N1
21-05QC
22-08N
75-01F
21-08i01
transistor 12n60c
12N60c equivalent
30N120D1
13N50 equivalent
12n60c
MOSFET 1200v 30a
MOSFET 1000v 30a
30n120d
CS20-22MOF1
12N60c MOSFET
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IC 7414 datasheet
Abstract: IC 7414 APT13GP120BDF1 T0-247 13A 600V TO247 IGBT
Text: APT13GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT13GP120BDF1
O-247
Collec059)
IC 7414 datasheet
IC 7414
APT13GP120BDF1
T0-247
13A 600V TO247 IGBT
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Untitled
Abstract: No abstract text available
Text: APT13GP120BDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT13GP120BDQ1 APT13GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT13GP120BDQ1
APT13GP120BDQ1
APT13GP120BDQ1G*
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APT13GP120BSC
Abstract: T0-247
Text: APT13GP120BSC 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT13GP120BSC
O-247
Col610)
APT13GP120BSC
T0-247
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65a3
Abstract: APT13GP120B T0-247
Text: APT13GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT13GP120B
O-247
Collector-Em059)
65a3
APT13GP120B
T0-247
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Untitled
Abstract: No abstract text available
Text: APT13GP120BDF1 APT13GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT13GP120BDF1
O-247
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Untitled
Abstract: No abstract text available
Text: APT13GP120BDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT13GP120BDQ1 APT13GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT13GP120BDQ1
APT13GP120BDQ1
APT13GP120BDQ1G*
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transistor 7412
Abstract: 7412 datasheet IC 7412 datasheet APT13GP120B APT13GP120BG APT13GP120S APT13GP120SG
Text: 1200V APT13GP120B_S G APT13GP120B APT13GP120S APT13GP120BG* APT13GP120SG* TYPICAL PERFORMANCE CURVES *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® B TO The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch
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APT13GP120B
APT13GP120S
APT13GP120BG*
APT13GP120SG*
transistor 7412
7412 datasheet
IC 7412 datasheet
APT13GP120B
APT13GP120BG
APT13GP120S
APT13GP120SG
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IC 7446 A
Abstract: ic 7446 data sheet ic 7446 7446 data sheet IC 7446 datasheet 7446 APT13GP120BDQ1 APT13GP120BDQ1G 1200v 30A to247
Text: APT13GP120BDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT13GP120BDQ1 APT13GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT13GP120BDQ1
APT13GP120BDQ1
APT13GP120BDQ1G*
IC 7446 A
ic 7446
data sheet ic 7446
7446 data sheet
IC 7446 datasheet
7446
APT13GP120BDQ1G
1200v 30A to247
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035H
Abstract: 8ETH06 IRFPE30 forward smps ic 200A 600V FET
Text: PD - 95558 SMPS IGBT IRGP20B60PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies Lead-Free Equivalent MOSFET Parameters
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IRGP20B60PDPbF
O-247AC
IRFPE30
035H
8ETH06
IRFPE30
forward smps ic
200A 600V FET
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Mosfet
Abstract: SSF20N60H
Text: SSF20N60H 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.2ohm(typ.) ID 20A TO247 High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Lead free product
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SSF20N60H
SSF20N60H
Mosfet
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035H
Abstract: IRFPE30 8ETH06 IRFP250 MOSFET 40A 600V mosfet 40a 200v IRGP20B60PDPBF
Text: PD - 95558 SMPS IGBT IRGP20B60PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies Lead-Free Equivalent MOSFET Parameters
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IRGP20B60PDPbF
IRFPE30
O-247AC
035H
IRFPE30
8ETH06
IRFP250
MOSFET 40A 600V
mosfet 40a 200v
IRGP20B60PDPBF
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P channel 600v 20a IGBT
Abstract: irfp250 DRIVER 600v 20a IGBT driver 400v 20A ultra fast recovery diode IGBT SMPS 00IC datasheet irfp250 mosfet fet 600V 20A IGBT tail time IR igbt gate driver ic
Text: PD - 95558 SMPS IGBT IRGP20B60PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies Lead-Free Equivalent MOSFET Parameters
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IRGP20B60PDPbF
IRFPE30
O-247AC
P channel 600v 20a IGBT
irfp250 DRIVER
600v 20a IGBT driver
400v 20A ultra fast recovery diode
IGBT SMPS
00IC
datasheet irfp250 mosfet
fet 600V 20A
IGBT tail time
IR igbt gate driver ic
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STW13NB60
Abstract: STH13NB60FI
Text: STW13NB60 STH13NB60FI N - CHANNEL 600V - 0.48Î2 - 13A - TO-247/ISOWATT218 PowerMESH MOSFET TYPE V STW 13N B 60 STH 13N B60FI • . . . . dss 600 V 600 V R D S o n Id <0.54 Q. <0.54 Q, 13 A 8.6 A TYPICAL RDS(on) = 0.48 £1 EXTREMELY HIGH dv/dt CAPABILITY
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OCR Scan
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STW13NB60
STH13NB60FI
O-247/ISOWATT218
STH13NB60FI
IS0WATT218
P025C
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