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    1338 A5 TEMPERATURE Search Results

    1338 A5 TEMPERATURE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation

    1338 A5 TEMPERATURE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1338 A5 temperature

    Abstract: 8088 ram 100PF MX66C256 mx66c256mc-70
    Text: MX66C256 Very Low Power 32k x 8 CMOS SRAM DESCRIPTION FEATURES The MX66C256 is a high performance, very low power CMOS Static Random Access Memory organized as 32,768 words by 8 bits and operates at 5.0V supply voltage. Advanced CMOS technology and circuit techniques


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    PDF MX66C256 MX66C256 piSOP-28PIN TSOP-28PIN MX66C256MI- MX66C256MI-10 MX66C256TC- 1338 A5 temperature 8088 ram 100PF mx66c256mc-70

    8088 ram

    Abstract: MX66C1024 sram 128 x 8
    Text: MX66C1024 5V Low Power CMOS SRAM 128 x 8 Bit n FEATURES n DESCRIPTION • Vcc operation voltage : 5V • Low power consumption : 45mA Max. write current 2mA (Max.) read current 0.6uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.)


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    PDF MX66C1024 100ns MX66C1024 hi70O DS00040 8088 ram sram 128 x 8

    Sunplus SPF

    Abstract: SPFA01A sunplus music synthesizer
    Text: S PFA01A SP Romless Music Synthesizer OCT. 05, 2001 Version 1.4 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document.


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    PDF SPFA01A Sunplus SPF SPFA01A sunplus music synthesizer

    Untitled

    Abstract: No abstract text available
    Text: MX66U4000 m A Extra Low Power/Voltage 512k x 8 CMOS SRAM FEATURES DESCRIPTION □ Very low operation voltage The MX66U4000 is a high performance, extra low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a very low range of supply voltage.


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    PDF 150ns MX66U4000 MX66U4000 MX66U4000TC MX66U4000SC MX66U4000TRC MX66U4000SRC DS0009

    Untitled

    Abstract: No abstract text available
    Text: MX66X4000 m A Extra Low Power/Voltage 512k x 8 CMOS SRAM FEATURES DESCRIPTION □ The MX66X4000 is a high performance, extra low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a very low range of supply voltage.


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    PDF 250ns MX66X4000 MX66X4000 MX66X4000TC MX66X4000SC MX66X4000TRC MX66X4000SRC DS0010

    Untitled

    Abstract: No abstract text available
    Text: MX66V4000 m A Very Low Power/Voltage 512k x 8 CMOS SRAM FEATURES DESCRIPTION □ The MX66V4000 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a very low range of supply voltage.


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    PDF MX66V4000 MX66V4000 prov17 MX66V4000TC MX66V4000SC MX66V4000TRC MX66V4000SRC DS0008

    TR321

    Abstract: No abstract text available
    Text: m MX66V2000 A Low Power/Voltage 512k x 8 CMOS SRAM FEATURES DESCRIPTION QJ Wide operation voltage 2.4V ~ 5.5V O Low power consumption Vcc=3.0V 20mA Max. write current 2mA (Max.) read current luA (Typ.) CMOS standby cuirent Vcc=5.0V 30mA (Max.) write current


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    PDF MX66V2000 MX66V2000 MX600TRI- MX66LV2000STI- MX66LV2000S PDIP-32PIN OP-32PIN TSOP-32PDNT TSOP-32PIN( TR321

    DS0006

    Abstract: No abstract text available
    Text: mA MX66X256 Super Low Power 32k x 8 CMOS SRAM DESCRIPTION FEATURES a QJ O O 13 □ O Q) 13 O 13 Wide supply voltage range - CMOS Input level 0.8Vcc/0.2Vcc) 5.5V to 1.5V - TTL Input level (3V/0V) 4.5V to 1.5V Super low power consumption - 5V operation 60mA (Max.) write current


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    PDF MX66X256 MX66X256 100ns 600mi1 DS0006 28-Pin MX66X256TC DS0006

    Untitled

    Abstract: No abstract text available
    Text: mA MX66U2000 Very Low Power 512k x 8 CMOS SRAM FEATURES □J Very low operation voltage 1.8V QJ Very low power consumption 1OmA Max. write current 1mA (Max.) read current luA (Typ.) CMOS standby current □ High speed access time 150ns (Max.) GJ Input levels are CMOS-compatible


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    PDF 150ns MX66U2000 MX66U2000 MX66LV2000TI- MX66LV2000TRI- MX66LV2000STI- MX66LV2000S PDIP-32PIN OP-32PIN TSOP-32PDNT

    MX66V1024TC

    Abstract: MX66V1024T
    Text: MX66V1024 lY I J V Super Low Power 128k x 8 CMOS SRAM FEATURES W ide supply voltage range - CM OS Input level 0.8V cc/0.2Vcc 5.5V to 2V - TTL Input level (3V/0V) 4.5V to 2V 0 Super low pow er consum ption - 5V operation 60mA (Max.) write current 20m A (Max.) read current


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    PDF 70ns/100ns 200ns MX27C8000 32-PIN 600mil) MX66V1024TC MX66V1024T

    Untitled

    Abstract: No abstract text available
    Text: MX66U1024 lY I J V Super Low Power 128k x 8 CMOS SRAM FEATURES W ide supply voltage range - CM OS Input level 0.8V cc/0.2Vcc 5.5V to 2V - TTL Input level (3V/0V) 4.5V to 2V 0 Super low pow er consum ption - 5V operation 60mA (Max.) write current 20m A (Max.) read current


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    PDF 70ns/100ns 200ns optio12 MX66U1024TC MX66U1024TRC DS0004

    Untitled

    Abstract: No abstract text available
    Text: •VIA MX66X1024 Super Low Power 128k x 8 CMOS SRAM DESCRIPTION FEATURES Ql Wide supply voltage range - CMOS Input level 0.8Vcc/0.2Vcc 5.5 V to 1.5V - TTL Input level (3V/0V) 4.5 V to 1.5V Super low power consumption - 5V operation 60mA (Max.) write current


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    PDF 70ns/100ns 200ns MX27C8000 32-PIN 600mil)

    MX66L

    Abstract: No abstract text available
    Text: m MX66X2000 A Extra Low Power 512kx 8 CMOS SRAM FEATURES DESCRIPTION Q Extra low operation voltage The MX66X2000 is a high performance, extra low power CMOS Static Random Access Memory organized as 262,144 words by 8 bits and operates from a extra low range of supply voltage.


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    PDF MX66X2000 512kx MX66X2000 150ns MX66LV2000TI- MX66LV2000TRI- MX66LV2000STI- MX66L

    Untitled

    Abstract: No abstract text available
    Text: •VIA. MX66V256 Super Low Power 32k x 8 CMOS SRAM DESCRIPTION FEATURES 0 Wide supply voltage range - CMOS Input level 0.8Vcc/0.2Vcc 5.5 V to 2V - TTL Input level (3V/0V) 4.5 V to 2V QJ Super low power consumption - 5V operation 60mA (Max.) write current


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    PDF /100ns 200ns DS0002 28-Pin MX66V256 MX66V256TC

    Untitled

    Abstract: No abstract text available
    Text: MX66U4000 •W A Extra Low Power/Voltage 512k x 8 CMOS SRAM FEATURES DESCRIPTION The MX66U4000 is a high performance, extra low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a very low range of supply voltage.


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    PDF MX66U4000 MX66U4000 150ns DS0009 32-PIN 600mil) MX27C8000

    fm 4213 ic

    Abstract: No abstract text available
    Text: MX66V4000 •W A V ery L ow P o w e r /V o lta g e 5 1 2 k x 8 C M O S S R A M FEATURES DESCRIPTION The MX66V4000 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a very low range of supply voltage.


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    PDF MX66V4000 MX66V4000 32-PIN 600mil) MX27C8000 fm 4213 ic

    fm 4213 ic

    Abstract: No abstract text available
    Text: MX66X4000 •W A Extra Low Power/Voltage 512k x 8 CMOS SRAM FEATURES DESCRIPTION The MX66X4000 is a high performance, extra low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a very low range of supply voltage.


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    PDF MX66X4000 MX66X4000 250ns DS0010 32-PIN 600mil) MX27C8000 fm 4213 ic

    Untitled

    Abstract: No abstract text available
    Text: m MX66U256 A Super Low Power 32k x 8 CMOS SRAM DESCRIPTION FEATURES a QJ O O 13 □ O Q) 13 O 13 Wide supply voltage range - CMOS Input level 0.8Vcc/0.2Vcc) 5.5 V to 2V - TTL Input level (3V/0V) 4.5 V to 2V Super low power consumption - 5V operation 60mA (Max.) write current


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    PDF MX66U256 /100ns 200ns 28-Pin MX66U256TC DS0001

    Untitled

    Abstract: No abstract text available
    Text: IY IJV MX66V2000 Low Power/Voltage 512k x 8 CMOS SRAM FEATURES S DESCRIPTION Wide operation voltage 2.4V ~ 5.5V a Low power consumption Vcc=3.0V 20mA Max. write current 2mA (Max.) read current luA (Typ.) CMOS standby current Vcc=5.0V 30mA (Max.) write current


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    PDF MX66V2000 MX66V2000 32-PIN 600mil) MX27C8000

    Untitled

    Abstract: No abstract text available
    Text: MX66X1024 mA. Super Low Power 128k x 8 CMOS SRAM DESCRIPTION FEATURES Ql Wide supply voltage range - CMOS Input level 0.8V cc/0.2Vcc 5.5V to 1.5V - TTL Input level (3V/0V) 4.5 V to 1.5 V Super low power consumption - 5V operation 60mA (Max.) write current


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    PDF 70ns/100ns 200ns MX66X1024TRC DS0005

    DS0001

    Abstract: No abstract text available
    Text: •VIA MX66U256 Super Low Power 32k x 8 CMOS SRAM DESCRIPTION FEATURES Q Wide supply voltage range - CMOS Input level 0.8Vcc/0.2Vcc) 5.5V to 2V - TTL Input level (3V/0V) 4.5V to 2V Ql Super low power consumption - 5V operation 60mA (Max.) write current 20mA (Max.) read current


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    PDF /100ns 200ns MX27L512 32-PIN 28-PIN DS0001

    Untitled

    Abstract: No abstract text available
    Text: MX66X256 m A Super Low Power 32k x 8 CMOS SRAM DESCRIPTION FEATURES Ql Wide supply voltage range - CMOS Input level 0.8Vcc/0.2Vcc 5.5 V to 1.5V - TTL Input level (3V/0V) 4.5 V to 1.5V S Super low power consumption - 5V operation 60mA (Max.) write current


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    PDF /100ns 200ns MX27L512 32-PIN 28-PIN

    fm 4213 ic

    Abstract: DS00026
    Text: lY lW MX66V256 Super Low Power 32k x 8 CMOS SRAM DESCRIPTION FEATURES The MX66V256 is a high performance, low power CMOS Static Random Access Memory organized as 32,768 words by 8 bits and operates from a wide range of supply voltage. Advanced CMOS technology and circuit techniques


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    PDF /100ns 200ns MX27L512 32-PIN 28-PIN fm 4213 ic DS00026

    Untitled

    Abstract: No abstract text available
    Text: mA FEATURES MX66U1024 Super Low Power 128k x 8 CMOS SRAM QJ Wide supply voltage range - CMOS Input level 0.8Vcc/0.2Vcc 5.5 V to 2V - TTL Input level (3V/0V) 4.5 V to 2V □ Super low power consumption - 5V operation 60mA (Max.) write current 20mA (Max.) read current


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    PDF 70ns/100ns 200ns MX66U1024 32-Pin MX66U1024TC MX66U1024TRC S0004