TAJE107M025
Abstract: 3216 footprint IPC Ta2O5 phase diagram TLJG107M004 TPS 1028 CWR09 CWR11 CWR19 CWR29 TS16949
Text: www.avx.com AVX Tantalum and Niobium Oxide Capacitors Version 10.5 Contents SECTION 1: SURFACE MOUNT COMMERCIAL TANTALUM Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3
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S-TL0M410-C
TAJE107M025
3216 footprint IPC
Ta2O5 phase diagram
TLJG107M004
TPS 1028
CWR09
CWR11
CWR19
CWR29
TS16949
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0103 MA WJ 73
Abstract: TAJ Automotive TAZ HRC6000 TPS Automotive Range
Text: www.avx.com AVX Tantalum and Niobium Oxide Capacitors Version 14.3 Contents SECTION 1: SURFACE MOUNT COMMERCIAL TANTALUM Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3
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S-TL0M314-C
0103 MA WJ 73
TAJ Automotive
TAZ HRC6000
TPS Automotive Range
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MCRA022AT
Abstract: CL01AB00T CL01A400T CL02A400T CL04A400M CL25D300T CL05A400M RL4RA022T CL09A300M CL03D301M
Text: More control and automation components Auxiliary contactors / Contacteurs auxiliaires Ith A max. mm2 Ie Series M - Mini-contactors /Série M - Minicontacteurs 660 16 20 2 x 2.5 2x6 A600 120V A 6 10 AC15 / AC11 220/230V A 6 10 380/400V A 4 6 415/440V A 3 5
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220/230V
380/400V
415/440V
660/690V
BTLF30D
1-60s
BTLF60D
4-48V
0-127V
30-250V
MCRA022AT
CL01AB00T
CL01A400T
CL02A400T
CL04A400M
CL25D300T
CL05A400M
RL4RA022T
CL09A300M
CL03D301M
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xc68040
Abstract: xc68307 MC88110 mpc 1488 mc68185 Motorola M 9587 xc68lc040 XPC106 MC88100 XPC105
Text: BR1100/D REV 22 Microprocessor and Memory Technologies Group Reliability and Quality Report Third Quarter 1996 MICROPROCESSOR AND MEMORY TECHNOLOGIES GROUP RELIABILITY AND QUALITY REPORT QUARTER 3, 1996 MOTOROLA INC., 1996 To Our Valued Customers: Thank You! Thank you for selecting Motorola as your supplier of Microprocessor and Memory Products.
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BR1100/D
xc68040
xc68307
MC88110
mpc 1488
mc68185
Motorola M 9587
xc68lc040
XPC106
MC88100
XPC105
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HR5000
Abstract: U10-2 SMD CAPACITOR 1206 2.2Mf 16V smd code 12.00 Jn 1K100 NOJB107M006 FXXXX Plastic Mold CRYSTAL SMD TCJD106M050 CWR11
Text: www.avx.com AVX Tantalum and Niobium Oxide Capacitors Version 10.10 Contents SECTION 1: SURFACE MOUNT COMMERCIAL TANTALUM Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3
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S-TL0M1010-C
HR5000
U10-2
SMD CAPACITOR 1206 2.2Mf 16V
smd code 12.00 Jn
1K100
NOJB107M006
FXXXX
Plastic Mold CRYSTAL SMD
TCJD106M050
CWR11
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HMC676LC3C
Abstract: No abstract text available
Text: ANALOG & MIXED -SIGNAL ICS, MODULES, SUBSYSTEMS & INSTRUMENTATION, DC - 110 GHZ AUTOMOTIVE Telematics & Sensors BROADBAND Cable Modem, CATV, DBS & VoIP Fixed Wireless, WiMAX & WiBro UWB & WirelessLAN CELLULAR INFRASTRUCTURE GSM, GPRS, CDMA, TD-SCDMA, WCDMA, UMTS & 4G / LTE
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OC-48
Modul1-8-8301-8450
HMC676LC3C
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kyocera 433 k
Abstract: avx smt catalogue 1 watt axial resistor k103 INFRARED laser 6y47 s7-200 TLCJ226M003 S2000A TACK334M016
Text: www.avx.com AVX Tantalum and Niobium Oxide Capacitors Version 12.6 Contents SECTION 1: SURFACE MOUNT COMMERCIAL TANTALUM Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3
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S-TL0M612-C
kyocera 433 k
avx smt catalogue
1 watt axial resistor
k103
INFRARED laser
6y47
s7-200
TLCJ226M003
S2000A
TACK334M016
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Untitled
Abstract: No abstract text available
Text: ANALOG & MIXED -SIGNAL ICS, MODULES, SUBSYSTEMS & INSTRUMENTATION, DC - 110 GHZ AUTOMOTIVE Telematics & Sensors BROADBAND Cable Modem, CATV, DBS & VoIP Fixed Wireless, WiMAX & WiBro UWB & WirelessLAN CELLULAR INFRASTRUCTURE GSM, GPRS, CDMA, TD-SCDMA, WCDMA, UMTS & 4G / LTE
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OC-48
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Untitled
Abstract: No abstract text available
Text: HbflbBEb G0Dlb77 OS'i H I X Y d ix y s Thyristor Modules MCC132 iTAV= 2 x 130 A Thyristor/Diode Modules MCD132 vRRM= 600-1800 v Vr w V o *. V Vm Vmm V Type Version 1 Version 1 700 900 1300 1500 1700 1900 600 800 1200 1400 1600 1800* M C C 132-06io1 M C C 132-06io1
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G0Dlb77
MCC132
MCD132
132-06io1
132-12io1
132-14io1
132-16io1
MCD132-06Â
MCD132-06Ã
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bc 2878 transistor
Abstract: WJ A38 WJ-PA38 transistor BC 157 transistor K 2937 bc 2878 transistor bc 146
Text: uuU PA38-2/ SMPA38-2 200 to 2600 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 200-2800 MHz TYP. HIGH OUTPUT LEVEL: +23.5 dBm (TYP.) GaAs FET AMPLIFIER HIGH THIRD ORDER INTERCEPT POINT: +33 dBm (TYP.) Outline Drawings
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PA38-2/
SMPA38-2
PA38-2
J1-4401
bc 2878 transistor
WJ A38
WJ-PA38
transistor BC 157
transistor K 2937
bc 2878
transistor bc 146
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WJ-A77
Abstract: WJ-CA77
Text: u u U A77/SMA77 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN: 16.5 dB TYP. HIGH OUTPUT LEVEL: +16.5 dBm (TYP.) HIGH THIRD ORDER I.P.: +30 dBm (TYP.) LOW VSWR: 1.3:1 (TYP.) Outline Drawings A77 Specifications *
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A77/SMA77
1Q08C
1009C
J1-4401
WJ-A77
WJ-CA77
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62792
Abstract: 300/SCR 131- 6 WJ 66
Text: uuU RA66 / SMRA66 10 to 1000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - THREE STAGES: 37.0 dB TYP. LOW NOISE: <3.5 dB (TYP.) MEDIUM OUTPUT LEVEL: > +15.5 dBm (TYP.) HIGH REVERSE ISOLATION: >50 dB (TYP) Outline Drawings
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SMRA66
018-OCO2
VSW354
1-800-WJ1-4401
62792
300/SCR 131- 6 WJ 66
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TRANSISTOR BC 158
Abstract: transistor BC 157 BC 148 transistor WJ-A35 transistor BC 154
Text: uud A35/SMA35 10 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ MEDIUM OUTPUT LEVEL: +9 dBm TYP. ♦ WIDE POWER SUPPLY RANGE: +8 TO +20 VOLTS Outline Drawings A35 Specifications* 0.450 r, (1U1) U 0 200 (5.06) Characteristics Frequency (Min.)
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A35/SMA35
1-800-WJ1-4401
TRANSISTOR BC 158
transistor BC 157
BC 148 transistor
WJ-A35
transistor BC 154
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transistor BC 157
Abstract: 13000 transistor TO-220
Text: u u U A66 / SMA66 10 to 1200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 23.5 dB TYP. LOW NOISE: <3.8 dB (TYP.) HIGH OUTPUT LEVEL: +15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Outline Drawings
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SMA66
1-800-WJ1-4401
transistor BC 157
13000 transistor TO-220
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WJ-CA19-1
Abstract: No abstract text available
Text: uuU A19-1 /SMA19-1 W M BM KKm 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +22.5 dBm TYP. HIGH THIRD ORDER I.P. +35 dBm (TYP.) MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Outline Drawings A19-1 Specifications
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A19-1
/SMA19-1
A19-1
50-ohm
WJ-CA19-1
WJ-A19-1
J1-4401
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WJ-CA37
Abstract: bc 162 transistor WJ-A37
Text: uuU A37 / SMA37 10 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT LEVEL: +15 dBm TYP. HIGH THIRD ORDER I.P.: +28 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 TO +15 VOLTS Outline Drawings A 37 Specifications* 0 200
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SMA37
50-ohm
WJ-CA37
WJ-A37
1-800-WJ1-4401
bc 162 transistor
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transistor et 454
Abstract: A671 transistor WJ-A67-1 transistor BC 102 transistor bc 132 transistor A671
Text: uuU A 6 7 - 1 / S M A 6 7 - 1 10 to 600 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH EFFICIENCY: +17.0 dBm TYP. OUTPUT POWER @ 36 mA (TYP.) ♦ LOW NOISE FIGURE: 3.6 dB (TYP.) ♦ WIDE POWER SUPPLY RANGE: +5 Vdc to +15 Vdc O utline D raw ings
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A67-1
185sO
J1-4401
transistor et 454
A671 transistor
WJ-A67-1
transistor BC 102
transistor bc 132
transistor A671
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WJ-A64
Abstract: wj 508 WJA64 BC 148 TRANSISTOR TRANSISTOR "BC 258" TRANSISTOR BC 252 transistor BC 148
Text: uuU A64 / SMA64 10 to 1200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 3.0 dB TYP. HIGH GAIN - TWO STAGES: 26 dB (TYP.) ULTRA LOW PHASE DEVIATION FROM LINEARITY: < ±2°,100-1000 MHz ♦ LOW VSWR: 1.2:1 (TYP.) Outline Drawings
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SMA64
Input/Out25
1-800-WJ1
WJ-A64
wj 508
WJA64
BC 148 TRANSISTOR
TRANSISTOR "BC 258"
TRANSISTOR BC 252
transistor BC 148
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Untitled
Abstract: No abstract text available
Text: uuU A31-1 /SMA31-1 10 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ LOW NOISE: < 3.5 dB TYP. ♦ LOW VSWR : 1.5.1 (TYP.) Outline Drawings A31-1 Specifications5' Characteristics Frequency (Min.) Small Signal Gain (Min.) Gain Flatness (Max.)
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A31-1
/SMA31-1
A31-1
50-OHM
1-800-WJ1-4401
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WJA75
Abstract: WJ-A75 wj a75 bc 459 transistor transistor BC 8050 ATIC 164 D2 w-ja75
Text: u u U A75 / SMA75 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN: 21.0 dB TYP. LOW NOISE: 2.1 dB (TYP.) MEDIUM OUTPUT LEVEL: +9 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 TO +20 VOLTS Outline Drawings A75 Specifications*
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SMA75
1-800-WJ1-4401
WJA75
WJ-A75
wj a75
bc 459 transistor
transistor BC 8050
ATIC 164 D2
w-ja75
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WJL1
Abstract: wj-l1
Text: uuU L1 / SML1 5 TO 3000 MHz TO-8 THIN-FILM LIMITER MODULE ♦ AVAILABLE IN SURFACE MOUNT ♦ VOLTAGE VARIABLE LIMITING LEVEL: -10 TOO dBm ♦ LOW INSERTION LOSS AT LOW INPUT LEVELS: < 2.0 dB TYR ♦ GOOD SUPPRESSION OF EVEN ORDER HARMONICS DUE TO BALANCED CIRCUIT DESIGN
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1-800-WJ1-4401
WJL1
wj-l1
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amplifier CV 203
Abstract: TRANSISTOR a45
Text: u u U A45 / SMA45 1 to 4 GHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN 17.5 dB TYP. LOW NOISE 4.5 dB (TYP.) HIGH OUTPUT POWER: +19.5 dBm (TYP.) GaAs FET DESIGN Outline Drawings A45 Specifications* Characteristic
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SMA45
1-800-WJ1
amplifier CV 203
TRANSISTOR a45
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Untitled
Abstract: No abstract text available
Text: u u U A33-1 / SMA33-1 2 to 2400 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ ULTRAWIDE BANDWIDTH: 1 - 2600 MHz TYP. ♦ MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Outline Drawings Specifications’* Characteristics Frequency (Min.) Small Signal Gain (Min.)
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A33-1
SMA33-1
A33-1
50-ohm
1-800-WJ1-4401
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bc 149 transistor
Abstract: atic 144 WJ-CA45-1
Text: u j J A45-1 / SMA45-1 1 to 4 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.1 dB (TYP.) GaAs FET DESIGN llllillil Outline Drawings A 4 5 -1 0.460 n (11.41) ü Specifications11
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A45-1
SMA45-1
1-800-WJ1
bc 149 transistor
atic 144
WJ-CA45-1
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