j4313

Abstract: j4313-o c5242 2sc5200 amplifier circuit
Contextual Info: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz.

j4213-o

Abstract: j4213 a1962 transistor b 1560
Contextual Info: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A High Power Dissipation : 130watts High Frequency : 30MHz.

j4313-o

Abstract: NPN Transistor 2sc5242 J4313 c5242o J4313R J4313O c5242 C5242-O 2sc5242 transistor 2SC5242RTU
Contextual Info: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz.

j4313-o

Contextual Info: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = 17A High Power Dissipation : 130watts High Frequency : 30MHz.

PTF211301E

Contextual Info: PTF211301E PTF211301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2110 – 2170 MHz Description The PTF211301E and PTF211301F are thermally-enhanced, 130watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier

j4213-o

Abstract: a1962 j4213 a1962o 2SA1962OTU 2SA1962RTU FJP1943 FJPF1943 transistor 2sc5242
Contextual Info: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A High Power Dissipation : 130watts High Frequency : 30MHz.

j4313-o

Abstract: j4313-r transistor 2sc5242 2SC5242 J4313 FJA4313
Contextual Info: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Fequency : 30MHz.

j4313-o

Abstract: c5242 2SC5242* datasheet NPN Transistor 2sc5242 2sc5200 amplifier J4313O c5242o 2sc5200 amplifier circuit J4313 FJA4313
Contextual Info: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 17A High Power Dissipation : 130watts High Frequency : 30MHz.

j4213-o

Abstract: j4213 a1962 J4213O J4213R 2SA1962O 2SA1962 2SA1962OTU A1962R FJA4213
Contextual Info: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -17A High Power Dissipation : 130watts High Frequency : 30MHz.

PTF211301F

Abstract: PTF211301E BCP56 LM7805 PTF211301A p4 smd 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd
Contextual Info: PTF211301E PTF211301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2110 – 2170 MHz Description The PTF211301E and PTF211301F are thermally-enhanced, 130watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier

j4213

Abstract: j4213-o
Contextual Info: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = -17A High Power Dissipation : 130watts High Frequency : 30MHz.

j4213

Abstract: j4213-o
Contextual Info: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A High Power Dissipation : 130watts High Fequency : 30MHz.

bluetooth layout guide

Abstract: sod923 audio LAYOUT GUIDE
Contextual Info: Lite-On Semiconductor Bluetooth EarPhone Platform Solutions Prepared by：Hugo Date：2011.05.27 Version：1.0 1 Bluetooth Earphone Block Diagram Antenna Button KEY RF PA EEPROM Memory Bluetooth Core Process Ear/Micro Phone Audio Code FM Radio USB Power Unit

LM7805 smd

Abstract: BCP56 LM7805 PTF081301E PTF081301F transistor SMD LOA DD 127 D TRANSISTOR
Contextual Info: PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest

Contextual Info: PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA, CDMA2000,

elna 50v

Contextual Info: PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications. They are characterized for CDMA, CDMA2000, Super3G

Contextual Info: PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA and CDMA2000

Contextual Info: PTFA261301E Thermally-Enhanced High Power RF LDMOS FET 130 W, 2.62 – 2.68 GHz PTFA261301E Package 30260 Description The PTFA261301E is a thermally-enhanced 130-watt, internally-matched GOLDMOS FET intended for ultra-linear applications. It is characterized

EEMB Battery

Contextual Info: EEMB BATTERY 130W Solar module No.ESP130 THE CUSTOM DESIGN: The left picture shows the format of this solar module. It could be changed according to the need of customer or designer. All the figures and parameters rely on the actual need of user. SPECIFICATIONS*

24v 12v 20A regulator

Abstract: 130-watt molex 2139 IEC1000-4-5 molex 2695 CSA22 IEC1000-4-3 IEC1000-4-6 26-60-4080 MOLEX molex 6373
Contextual Info: 130 Watt FYX Series FEATURES • • • • • • • • • • SPECIFICATIONS Smallest, fully-featured 130-watt power supply available 4.00 x 6.20 x 1.34 inches High power density U channel with optional cover Universal input Power factor corrected to IEC 1000-3-2

AS1701

Abstract: nortel fan controller Centillion "network interface cards"
Contextual Info: Product Brief Centillion 20 Token Ring 24-port Workgroup Switch Centillion 20 Token Ring Workgroup Switch Features and Benefits • Token Ring-ATM Integration • Total Availability • Application-Intelligent Desktop Switching • Comprehensive Investment

Contextual Info: PTF181301E PTF181301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF181301E and PTF181301F are thermally-enhanced, 130-watt, internally matched GOLDMOS FETs intended for GSM and EDGE applications in the DCS/PCS bands. Thermally-enhanced packaging provides

ALT230

Contextual Info: PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications. They are characterized for CDMA and CDMA2000 operation

Contextual Info: Preliminary PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 860 to 960 MHz band. Thermally-enhanced packaging provides the coolest