j4313
Abstract: j4313-o c5242 2sc5200 amplifier circuit
Text: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz.
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2SC5242/FJA4313
130watts
30MHz.
2SA1962/FJA4213.
--TO264
2SC5200/FJL4315
--TO220
FJP5200
--TO220F
j4313
j4313-o
c5242
2sc5200 amplifier circuit
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j4213-o
Abstract: j4213 a1962 transistor b 1560
Text: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A High Power Dissipation : 130watts High Frequency : 30MHz.
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2SA1962/FJA4213
130watts
30MHz.
-230V
2SC5242/FJA4313.
2SA1943/FJL4215
FJP1943
O220F
FJPF1943
j4213-o
j4213
a1962
transistor b 1560
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j4313-o
Abstract: NPN Transistor 2sc5242 J4313 c5242o J4313R J4313O c5242 C5242-O 2sc5242 transistor 2SC5242RTU
Text: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz.
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2SC5242/FJA4313
130watts
30MHz.
2SA1962/FJA4213.
--TO264
2SC5200/FJL4315
--TO220
FJP5200
--TO220F
FJPF5200
j4313-o
NPN Transistor 2sc5242
J4313
c5242o
J4313R
J4313O
c5242
C5242-O
2sc5242 transistor
2SC5242RTU
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j4313-o
Abstract: No abstract text available
Text: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = 17A High Power Dissipation : 130watts High Frequency : 30MHz.
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2SC5242/FJA4313
130watts
30MHz.
to2SA1962/FJA4213.
--TO264
2SC5200/FJL4315
--TO220
FJP5200
--TO220F
FJPF5200
j4313-o
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PTF211301E
Abstract: No abstract text available
Text: PTF211301E PTF211301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2110 – 2170 MHz Description The PTF211301E and PTF211301F are thermally-enhanced, 130watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier
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PTF211301E
PTF211301F
130watt,
PTF211301F*
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j4213-o
Abstract: a1962 j4213 a1962o 2SA1962OTU 2SA1962RTU FJP1943 FJPF1943 transistor 2sc5242
Text: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A High Power Dissipation : 130watts High Frequency : 30MHz.
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2SA1962/FJA4213
130watts
30MHz.
-230V
2SC5242/FJA4313.
2SA1943/FJL4215
FJP1943
O220F
FJPF1943
2SA1962/FJA4213
j4213-o
a1962
j4213
a1962o
2SA1962OTU
2SA1962RTU
FJP1943
FJPF1943
transistor 2sc5242
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j4313-o
Abstract: j4313-r transistor 2sc5242 2SC5242 J4313 FJA4313
Text: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Fequency : 30MHz.
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2SC5242/FJA4313
130watts
30MHz.
2SA1962/FJA4213.
--TO264
2SC5200/FJL4315
--TO220
FJP5200
--TO220F
j4313-o
j4313-r
transistor 2sc5242
2SC5242
J4313
FJA4313
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j4313-o
Abstract: c5242 2SC5242* datasheet NPN Transistor 2sc5242 2sc5200 amplifier J4313O c5242o 2sc5200 amplifier circuit J4313 FJA4313
Text: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 17A High Power Dissipation : 130watts High Frequency : 30MHz.
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2SC5242/FJA4313
130watts
30MHz.
2SA1962/FJA4213.
--TO264
2SC5200/FJL4315
--TO220
FJP5200
--TO220F
FJPF5200
j4313-o
c5242
2SC5242* datasheet
NPN Transistor 2sc5242
2sc5200 amplifier
J4313O
c5242o
2sc5200 amplifier circuit
J4313
FJA4313
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j4213-o
Abstract: j4213 a1962 J4213O J4213R 2SA1962O 2SA1962 2SA1962OTU A1962R FJA4213
Text: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -17A High Power Dissipation : 130watts High Frequency : 30MHz.
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2SA1962/FJA4213
130watts
30MHz.
-250V
2SC5242/FJA4313.
2SA1943/FJL4215
FJP1943
O220F
FJPF1943
2SA1962/FJA4213
j4213-o
j4213
a1962
J4213O
J4213R
2SA1962O
2SA1962
2SA1962OTU
A1962R
FJA4213
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PTF211301F
Abstract: PTF211301E BCP56 LM7805 PTF211301A p4 smd 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd
Text: PTF211301E PTF211301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2110 – 2170 MHz Description The PTF211301E and PTF211301F are thermally-enhanced, 130watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier
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PTF211301E
PTF211301F
PTF211301E
PTF211301F
130watt,
PTF211301F*
BCP56
LM7805
PTF211301A
p4 smd
702 Z smd TRANSISTOR
702 Z TRANSISTOR smd
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j4213
Abstract: j4213-o
Text: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = -17A High Power Dissipation : 130watts High Frequency : 30MHz.
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2SA1962/FJA4213
130watts
30MHz.
-250V
SC5242/FJA4313.
2SA1943/FJL4215
FJP1943
O220F
FJPF1943
j4213
j4213-o
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j4213
Abstract: j4213-o
Text: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A High Power Dissipation : 130watts High Fequency : 30MHz.
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2SA1962/FJA4213
130watts
30MHz.
-230V
2SC5242/FJA4313.
2SA1943/FJL4215
FJP1943
O220F
FJPF1943
j4213
j4213-o
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bluetooth layout guide
Abstract: sod923 audio LAYOUT GUIDE
Text: Lite-On Semiconductor Bluetooth EarPhone Platform Solutions Prepared by：Hugo Date：2011.05.27 Version：1.0 1 Bluetooth Earphone Block Diagram Antenna Button KEY RF PA EEPROM Memory Bluetooth Core Process Ear/Micro Phone Audio Code FM Radio USB Power Unit
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Date2011
L04ESD5V0CP2
L13ESD5V0CA2
L13ESD5V0CE2
LEF01016F6-2
LEF032116F6-2
L13ESD5V0CE2
8x20s
bluetooth layout guide
sod923
audio LAYOUT GUIDE
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LM7805 smd
Abstract: BCP56 LM7805 PTF081301E PTF081301F transistor SMD LOA DD 127 D TRANSISTOR
Text: PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest
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PTF081301E
PTF081301F
PTF081301E
PTF081301F
130-watt,
LM7805 smd
BCP56
LM7805
transistor SMD LOA
DD 127 D TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA, CDMA2000,
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PTFA241301E
PTFA241301F
130-watt,
CDMA2000,
H-30260-2
H-31260-2
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elna 50v
Abstract: No abstract text available
Text: PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications. They are characterized for CDMA, CDMA2000, Super3G
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PTFA261301E
PTFA261301F
130-watt,
CDMA2000,
H-30260-2
H-31260-2
elna 50v
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Untitled
Abstract: No abstract text available
Text: PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA and CDMA2000
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PTFA241301E
PTFA241301F
130-watt,
CDMA2000
PTFA241301F*
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Untitled
Abstract: No abstract text available
Text: PTFA261301E Thermally-Enhanced High Power RF LDMOS FET 130 W, 2.62 – 2.68 GHz PTFA261301E Package 30260 Description The PTFA261301E is a thermally-enhanced 130-watt, internally-matched GOLDMOS FET intended for ultra-linear applications. It is characterized
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PTFA261301E
PTFA261301E
130-watt,
CDMA2000
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EEMB Battery
Abstract: No abstract text available
Text: EEMB BATTERY 130W Solar module No.ESP130 THE CUSTOM DESIGN: The left picture shows the format of this solar module. It could be changed according to the need of customer or designer. All the figures and parameters rely on the actual need of user. SPECIFICATIONS*
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ESP130
130Watts
72pcs
1580mm
810mm
15KGS
1000Wrent
EEMB Battery
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24v 12v 20A regulator
Abstract: 130-watt molex 2139 IEC1000-4-5 molex 2695 CSA22 IEC1000-4-3 IEC1000-4-6 26-60-4080 MOLEX molex 6373
Text: 130 Watt FYX Series FEATURES • • • • • • • • • • SPECIFICATIONS Smallest, fully-featured 130-watt power supply available 4.00 x 6.20 x 1.34 inches High power density U channel with optional cover Universal input Power factor corrected to IEC 1000-3-2
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130-watt
UL1950/CSA22
950-951/EN60950/CE
24v 12v 20A regulator
molex 2139
IEC1000-4-5
molex 2695
CSA22
IEC1000-4-3
IEC1000-4-6
26-60-4080 MOLEX
molex 6373
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AS1701
Abstract: nortel fan controller Centillion "network interface cards"
Text: Product Brief Centillion 20 Token Ring 24-port Workgroup Switch Centillion 20 Token Ring Workgroup Switch Features and Benefits • Token Ring-ATM Integration • Total Availability • Application-Intelligent Desktop Switching • Comprehensive Investment
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24-port
24-Port
RJ-45
PB3229-B
AS1701
nortel fan controller
Centillion
"network interface cards"
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Untitled
Abstract: No abstract text available
Text: PTF181301E PTF181301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF181301E and PTF181301F are thermally-enhanced, 130-watt, internally matched GOLDMOS FETs intended for GSM and EDGE applications in the DCS/PCS bands. Thermally-enhanced packaging provides
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PTF181301E
PTF181301F
130-watt,
PTF181301F*
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ALT230
Abstract: No abstract text available
Text: PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications. They are characterized for CDMA and CDMA2000 operation
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PTFA261301E
PTFA261301F
130-watt,
CDMA2000
ALT230
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Untitled
Abstract: No abstract text available
Text: Preliminary PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 860 to 960 MHz band. Thermally-enhanced packaging provides the coolest
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PTF081301E
PTF081301F
PTF081301E
PTF081301F
130-watt,
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