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    130MJ Search Results

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    130MJ Price and Stock

    Rochester Electronics LLC HFA1130MJ/883

    IC OPAMP CFA 1 CIRCUIT 8CERDIP
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    KEMET Corporation PEG130MJ4140QE4

    CAP ALUM 1400UF 63V AXIAL TH
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    DigiKey PEG130MJ4140QE4 Bulk 1,161
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    Avnet Abacus PEG130MJ4140QE4 21 Weeks 1,161
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    KEMET Corporation PEG130MJ4140QL1

    CAP ALUM 1400UF 63V AXIAL TH
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    Avnet Abacus PEG130MJ4140QL1 143 Weeks 125
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    Vishay Dale CRCW1206130MJPTAHR

    RES SMD 130M OHM 5% 1/4W 1206
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    DigiKey CRCW1206130MJPTAHR Reel 5,000
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    Vishay Dale CRCW1206130MJPEAHR

    RES SMD 130M OHM 5% 1/4W 1206
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    DigiKey CRCW1206130MJPEAHR Reel 5,000
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    130MJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2124

    Abstract: DSA003718
    Text: Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2


    Original     		PDF 2SK2124 130mJ O-220E 2SK2124 DSA003718

    2SK3044

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 15.0±0.5 ■ Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2SK3044 130mJ O-220D-A1 2SK3044

    2SK2127

    Abstract: No abstract text available
    Text: 2SK2127 Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed : EAS > 130mJ 4.6±0.2 ● V GSS=±30V guaranteed secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications


    Original     		PDF 2SK2127 130mJ O-220E 2SK2127

    2SK2127

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 M Di ain sc te on na


    Original     		PDF 2SK2127 130mJ 2SK2127

    2SK3046

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2


    Original     		PDF 2SK3046 130mJ O-220D 2SK3046

    2SK3046

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2


    Original     		PDF 2SK3046 130mJ O-220D 2SK3046

    2SK2124

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm


    Original     		PDF 2SK2124 130mJ O-220E 2SK2124

    2sk2127

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm


    Original     		PDF 2SK2127 130mJ 2sk2127

    2sk2127

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2


    Original     		PDF 2SK2127 130mJ O-220E 2sk2127

    2SK3044

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2


    Original     		PDF 2SK3044 130mJ O-220D 2SK3044

    Untitled

    Abstract: No abstract text available
    Text: 2SK2124 Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed : EAS > 130mJ 4.6±0.2 ● V GSS=±30V guaranteed secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications


    Original     		PDF 2SK2124 130mJ O-220E

    2SK2124

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 M Di ain sc te on na


    Original     		PDF 2SK2124 130mJ 2SK2124

    2SK3046

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 ■ Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2SK3046 130mJ O-220D-A1 2SK3046

    2SK3044

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2


    Original     		PDF 2SK3044 130mJ O-220D 2SK3044

    BTS5441

    Abstract: INFINEON PART MARKING bts BTS5441G
    Text: Target Data Sheet, V1.3, Nov 2006 BTS 5441-2G Smart High-Side Power Switch PROFET Four Channels, 25 m Ω Automotive Power N e v e r s t o p t h i n k i n g . Smart High-Side Power Switch BTS 5441-2G 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5


    Original     		PDF 5441-2G BTS5441 INFINEON PART MARKING bts BTS5441G

    SMD transistor package code V12

    Abstract: BTS5246L
    Text: Target Data Sheet, V1.2, Aug 2006 B T S 52 4 6 - 2 L Smart High-Side Power Switch PROFET Two Channels, 19 mΩ Automotive Power N e v e r s t o p t h i n k i n g . Smart High-Side Power Switch BTS 5246-2L Table of Contents Page Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3


    Original     		PDF 5246-2L SMD transistor package code V12 BTS5246L

    BTS5241G

    Abstract: 5241-2G bts5241 Infineon BTS 3110 N PG-DSO-20-43
    Text: Target Data Sheet, V1.3, Nov 2006 BTS 5241-2G Smart High-Side Power Switch PROFET Two Channels, 25 mΩ Automotive Power N e v e r s t o p t h i n k i n g . Smart High-Side Power Switch BTS 5241-2G 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5


    Original     		PDF 5241-2G BTS5241G 5241-2G bts5241 Infineon BTS 3110 N PG-DSO-20-43

    transistor 315

    Abstract: 2l TRANSISTOR SMD MARKING CODE BTS 5242-2L TRANSISTOR SMD MARKING CODE 2l SMD transistor package code V12
    Text: Target Data Sheet, V1.2, August 2006 BTS 5242-2L Sm art Hi gh-Si de Pow er S witch PROFET Two Channels, 25 mΩ Automotive Power N e v e r s t o p t h i n k i n g . Smart High-Side Power Switch BTS 5242-2L Table of Contents Page Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF 5242-2L transistor 315 2l TRANSISTOR SMD MARKING CODE BTS 5242-2L TRANSISTOR SMD MARKING CODE 2l SMD transistor package code V12

    bts5241l

    Abstract: bts5241
    Text: Target Data Sheet, V1.3, Nov 2006 BTS 5241-2L Smart High-Side Power Switch PROFET Two Channels, 25 mΩ Automotive Power N e v e r s t o p t h i n k i n g . Smart High-Side Power Switch BTS 5241-2L 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5


    Original     		PDF 5241-2L bts5241l bts5241

    BTS5246L

    Abstract: 2l TRANSISTOR SMD MARKING CODE BTS5246-2L SMD transistor package code V12 5246-2L PG-DSO-12-9 smd transistor 2l TRANSISTOR SMD MARKING CODE 2l SMD code V12 bts52
    Text: Target Data Sheet, V1.2, Aug 2006 BTS 5246-2L Smart High-Side Power Switch PROFET Two Channels, 19 mΩ Automotive Power N e v e r s t o p t h i n k i n g . Smart High-Side Power Switch BTS 5246-2L Table of Contents Page Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3


    Original     		PDF 5246-2L BTS5246L 2l TRANSISTOR SMD MARKING CODE BTS5246-2L SMD transistor package code V12 5246-2L PG-DSO-12-9 smd transistor 2l TRANSISTOR SMD MARKING CODE 2l SMD code V12 bts52

    2SK2124

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS U nit : mm • Features • Avalanche energy capability guaranteed : EAS > 130mJ • V gss=±30V guaranteed • High-speed switching : t|= 60ns • No secondary breakdown ■ Applications • Non-contact relay


    OCR Scan     		PDF 2SK2124 130mJ -220E 2SK2124

    2SK2127

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed : EAS > 130mJ V<;s s = ± 3 0 V guaranteed High-speed switching : t|= 60ns No secondary breakdown ■ Applications


    OCR Scan     		PDF 2SK2127 130mJ 2SK2127