A 69157 scr
Abstract: HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41
Text: ND3% BASE1 XXXX4641-1306-1-P 1306 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 14:59 TS:TS date TS time LEDS & ACCESSORIES Find Datasheets Online LED DESIGN KITS • THROUGH-HOLE LEDS POWER LINE DESIGNER KIT HIGH-INTENSITY LED LAMPS CONT. T- 13⁄4 (5mm)
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74K5145
74K5144
74K5146
74K5147
74K5166
74K5170
71K0256
71K0273
71K0255
71K0272
A 69157 scr
HCPL 1458
TRANSISTOR SMD 431H
SMPS 666 VER 2.3
SMPS 666 VER 2.1
acsl 086 s
LHi 878
2057 LED dot matrix display 5x7
smd ic A9A
42-M41
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MAX166
Abstract: MAX1661 MAX1661EUB MAX1662 MAX1662EUB MAX1663 MAX1663EUB
Text: 19-1306; Rev 0; 10/97 EVALUATION KIT AVAILABLE Serial-to-Parallel/Parallel-to-Serial Converters and Load-Switch Controllers with SMBus Interface _Features The MAX1661/MAX1662/MAX1663 serial-to-parallel/ parallel-to-serial converters are intended to control external
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MAX1661/MAX1662/MAX1663
MAX1661/MAX1662/MAX1663
MAX166
MAX1661
MAX1661EUB
MAX1662
MAX1662EUB
MAX1663
MAX1663EUB
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w2f 48 transistor
Abstract: w2f 97 transistor W2F 66
Text: 19-1306; Rev 0; 10/97 EVALUATION KIT AVAILABLE Serial-to-Parallel/Parallel-to-Serial Converters and Load-Switch Controllers with SMBus Interface _Features The MAX1661/MAX1662/MAX1663 serial-to-parallel/ parallel-to-serial converters are intended to control external
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MAX1661/MAX1662/MAX1663
MAX1661
10LUMAXB
MAX1661/MAX1662/MAX1663
w2f 48 transistor
w2f 97 transistor
W2F 66
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Untitled
Abstract: No abstract text available
Text: 19-1306; Rev 0; 10/97 EVALUATION KIT AVAILABLE Serial-to-Parallel/Parallel-to-Serial Converters and Load-Sw itch Controllers w ith SMBus Interface _Fe a t ure s The MAX1661/MAX1662/MAX1663 serial-to-parallel/ parallel-to-serial converters are intended to control external
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MAX1661/MAX1662/MAX1663
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1306 TRANSISTOR
Abstract: RN1301 RN1302 RN1303 RN1304 RN1305 RN1306 RN2301 RN2306
Text: RN1301~RN1306 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1301,RN1302,RN1303 RN1304,RN1305,RN1306 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors. Simplify circuit design
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RN1301
RN1306
RN1302
RN1303
RN1304
RN1305
RN2301
RN2306
1306 TRANSISTOR
RN1303
RN1306
RN2306
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Untitled
Abstract: No abstract text available
Text: RN1301~RN1306 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1301,RN1302,RN1303 RN1304,RN1305,RN1306 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z With built-in bias resistors. z Simplify circuit design
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RN1301
RN1306
RN1302
RN1303
RN1304
RN1305
RN2301
RN2306
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PDF
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RN1306
Abstract: RN1301 RN1302 RN1303 RN1304 RN1305 RN2301 RN2306
Text: RN1301~RN1306 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1301,RN1302,RN1303 RN1304,RN1305,RN1306 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors. Simplify circuit design
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RN1301
RN1306
RN1302
RN1303
RN1304
RN1305
RN2301
RN2306
RN1306
RN1303
RN2306
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PDF
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RN1306
Abstract: marking 1305 RN1301 RN1302 RN1303 RN1304 RN1305 RN2301 RN2306
Text: RN1301~RN1306 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1301,RN1302,RN1303 RN1304,RN1305,RN1306 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors. l Simplify circuit design
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RN1301
RN1306
RN1302
RN1303
RN1304
RN1305
RN2301
RN2306
RN1306
marking 1305
RN1303
RN2306
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RN1301
Abstract: RN1302 RN1303 RN1304 RN1305 RN1306 RN2301 RN2306
Text: RN1301~RN1306 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1301,RN1302,RN1303 RN1304,RN1305,RN1306 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors. z Simplify circuit design
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RN1301
RN1306
RN1302
RN1303
RN1304
RN1305
RN2301
RN2306
RN1303
RN1306
RN2306
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PDF
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Untitled
Abstract: No abstract text available
Text: RN1301~RN1306 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1301,RN1302,RN1303 RN1304,RN1305,RN1306 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors. Simplify circuit design
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Original
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RN1301
RN1306
RN1302
RN1303
RN1304
RN1305
RN2301
RN2306
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PDF
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Untitled
Abstract: No abstract text available
Text: RN1301~RN1306 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1301, RN1302, RN1303 RN1304, RN1305, RN1306 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors. z Simplify circuit design
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Original
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RN1301
RN1306
RN1301,
RN1302,
RN1303
RN1304,
RN1305,
RN2301
RN2306
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PDF
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Untitled
Abstract: No abstract text available
Text: LT1306 Synchronous, Fixed Frequency Step-Up DC/DC Converter FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Output Disconnected from Input During Shutdown Output Voltage Remains Regulated When VIN > VOUT Controlled Input Current During Start-Up
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LT1306
300kHz
LT1613
OT-23
200mA
OT-23
LT1615
6V/350mA
LTC1624
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PDF
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DO3316-472
Abstract: LT1306 LT1306ES8 MMBD914LT1 TAJA105K020 TAJC226M010 TPSE227M010R0100 G10440 dc dc converter 5v voltage regulator PWM 1999 transconductance sink
Text: LT1306 Synchronous, Fixed Frequency Step-Up DC/DC Converter U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Output Disconnected from Input During Shutdown Output Voltage Remains Regulated When VIN > VOUT Controlled Input Current During Start-Up
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LT1306
300kHz
LT1613
OT-23
200mA
OT-23
LT1615
6V/350mA
LTC1624
DO3316-472
LT1306
LT1306ES8
MMBD914LT1
TAJA105K020
TAJC226M010
TPSE227M010R0100
G10440
dc dc converter 5v
voltage regulator PWM 1999 transconductance sink
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PDF
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folded cascode rail to rail op amp
Abstract: folded cascode second stage CMOS differential amplifier cascode folded cascode current mirror op amp high end amplifier schematics rail-to-rail differential amplifier AN1306 EL5157 EL5160 EL5411
Text: Avoid Instability in Rail to Rail CMOS Amplifiers Application Note Introduction The minimum feature size of the MOS transistor has been greatly reduced since its invention just a few decades ago. Reductions in gate oxide thickness, channel length and width have been responsible for a revolutionary reduction in
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150pF
AN1306
folded cascode rail to rail op amp
folded cascode second stage
CMOS differential amplifier cascode
folded cascode current mirror op amp
high end amplifier schematics
rail-to-rail differential amplifier
EL5157
EL5160
EL5411
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PDF
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A1306A
Abstract: buz41
Text: SIEMENS SIPMOS Power MOS Transistor VDS /D ^ D S o n • BUZ 41A = 500 V = 4.5 A = 1-5 Q N channel • E nhancem ent mode • A valanche-proof • Package: TO -220 A B 1) Type Ordering code BUZ 41 A C 6 7078-A 1306-A 3 Maximum Ratings Parameter Symbol
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OCR Scan
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078-A
306-A
SIL00340
SiL00342
A1306A
buz41
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PDF
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B1307M
Abstract: j 6810 J 6810 D 2SB1306 b1306 1307M 2SB1307 2SB1307M sb1306 B-1306
Text: /Transistors 2SB1306/2SB1307M/2SB1326 2S B 1306/2S B 1307M 2SB 1326 Epitaxial Planar PNP Silicon Transistors Freq. Power Amp. • • « Ä 1 VCE sat| £ ( - 7 fi\n i@ 2SB1306 /D im e n s io n s 5.a±0.2 ( U n it: m m ) 2SB 1307M 4.810.? V cE (sa t)= —0.35V (Typ.)
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2SB1306/2SB1307M/2SB1326
1306/2S
1307M
2SB1306
1307M
2SB1326
B1307M
j 6810
J 6810 D
2SB1306
b1306
2SB1307
2SB1307M
sb1306
B-1306
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PDF
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NEL130681-12
Abstract: NEL1306 2SC3542 NEL1300 NEL13208I-12 2SC3541 J425 75E5 NEL132081-12 NEL1320
Text: CLASS A, 1.3 GHz, 12 VOLT POWER TRANSISTOR FEATURES NEL130681-12 NEL13208I-12 DESCRIPTION • HIGH LINEAR POWER AND GAIN: N E L 1306: P idB = 3 8 dBm , G id B = 7.5 dB T Y P N EC 's N E L 1 3 0 0 series of N P N epitaxial microwave power transistor is designed specifically for large volum e mobile and
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NEL130681-12
NEL13208I-12
NEL1306:
NEL1320:
NEL1300
10pFMAX
1000pF
30dBm
38dBm
NEL1306
2SC3542
NEL13208I-12
2SC3541
J425
75E5
NEL132081-12
NEL1320
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Untitled
Abstract: No abstract text available
Text: DS1306 D S 1306 Serial Alarm R al Time Clock RTC D A L L A S se m ic o n d u c to r PIN ASSIGNMENT • Real time clock counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year compensation valid up to 2100 VCC2
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OCR Scan
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DS1306
2bl413G
DS1306
20-PIN
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PDF
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Untitled
Abstract: No abstract text available
Text: 19- 1306; Rev 0; 10/97 J V K J lX A J V i Losd-Sw H ch Controllers with SM Bus Interface The MAXI661/MAX1662/MAX1663 serial-to-parallel/ parallel-to-seriai converters are intended to control external power MOSFETs in power-plane switching applications. These small, low-cost devices can be used on a system
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OCR Scan
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MAXI661/MAX1662/MAX1663
MAX1661
lOOZ/MAX1003
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PDF
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Untitled
Abstract: No abstract text available
Text: 19-1306; Rev 0; 10/97 A M X I A I Serial-to-Parallel/Parallel-to-Serial Converters and Load- Swi t ch Controllers wi t h SMBus Int er f ace Features The MAX1 661/M A X 16 62 /M A X 1 663 s e ria l-to -p a ra lle l/ parallel-to-serial converters are intended to control external
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OCR Scan
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661/M
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PDF
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germanium transistors NPN
Abstract: ASY 29 2N1304 npn germanium 1302 germanium npn 1308 ic ASY29 2N1308
Text: NPN Germanium Transistors NPN G erm anium R F A llo y Tran sisto rs in T 0 5 metal case Type M a xim um Ratings BV CEO C haracteristics @ 2 5 ° C B V CBO V B V E ßO V 1CM A pr o r 1 W J JM °C hFE V ASY 28 A S Y 29 15 15 30 25 20 20 0.3 0.3 0.15 0.15 85
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15/1L_
germanium transistors NPN
ASY 29
2N1304
npn germanium
1302
germanium npn
1308 ic
ASY29
2N1308
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN1301-RN1306 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1301, RN1302, RN1303 RN1304, RN1305, RN1306 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • With Built-in Bias Resistors • Simplify Circuit Design
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OCR Scan
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RN1301-RN1306
RN1301,
RN1302,
RN1303
RN1304,
RN1305,
RN1306
RN2301
RN2306
RN1301
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PDF
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Untitled
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS1306 Serial Alarm Real Tim e C lock RTC FEATURES PIN ASSIGNMENT • Real tim e clock counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year com pensation valid up to 2100 -X Z T 3d Vqqi Veat “ =
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OCR Scan
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DS1306
DS1306
20-PIN
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PDF
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Untitled
Abstract: No abstract text available
Text: RN1301 ~RN1306 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1301, RN1302, RN1303 RN 1304, RN1305, RN1306 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • W ith Built-in Bias Resistors • Simplify Circuit Design
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OCR Scan
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RN1301
RN1306
RN1301,
RN1302,
RN1303
RN1305,
RN2301
RN2306
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PDF
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