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    13003G TRANSISTOR Search Results

    13003G TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    13003G TRANSISTOR Datasheets Context Search

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    transistor 13003G

    Abstract: mje13003 equivalent 13003G MJE13003 transistor+13003G
    Text: MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,


    Original
    PDF MJE13003 MJE13003/D transistor 13003G mje13003 equivalent 13003G MJE13003 transistor+13003G

    transistor 13003G

    Abstract: 13003G je13003 JE13003G JE 13003 13003G TRANSISTOR 2n222 TRANSISTOR pin diagram mje13003 equivalent mje13003 je13003 TRANSISTOR
    Text: MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,


    Original
    PDF MJE13003 MJE13003/D transistor 13003G 13003G je13003 JE13003G JE 13003 13003G TRANSISTOR 2n222 TRANSISTOR pin diagram mje13003 equivalent mje13003 je13003 TRANSISTOR