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    13 W TRANSISTOR Search Results

    13 W TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    13 W TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1N4743A 13 V - 5 A - 1 W - Glass Passivated Junction Silicon Zener Diode 0.80 Diodes . Page 1 of 1 Enter Your Part # Home Part Number: 1N4743A Online Store 1N4743A Diodes 13 V - 5 A - 1 W - Glass Passivated Junction Silicon Zener Transistors Diode Integrated Circuits


    Original     		PDF 1N4743A 1N4743A DO-204AL com/1n4743a

    CFL inverter circuit schematic diagram

    Abstract: cfl circuit diagram of 12 volts 3 CFL inverter circuit schematic diagram cfl ballast cfl circuit diagram AN98091 CE167V cfl circuit diagram of 6 volts PHU2N60E BALLAST CFL
    Text: AN98091 CFL 13 W demo PCB with UBA2021 for integrated lamp-ballast designs Rev. 02 — 29 December 2008 Application note Document information Info Content Keywords CFL ballast, UBA2021, compact, half-bridge, driver circuit Abstract A description is given of a 13 W electronic CFL ballast SMD demo board


    Original     		PDF AN98091 UBA2021 UBA2021, PR38922 PR39001) PHU2N60 PHU2N50) AN98091 CFL inverter circuit schematic diagram cfl circuit diagram of 12 volts 3 CFL inverter circuit schematic diagram cfl ballast cfl circuit diagram CE167V cfl circuit diagram of 6 volts PHU2N60E BALLAST CFL

    RL12

    Abstract: RL34 telefunken tdr
    Text: e5130 Low Voltage CMOS Driver Circuit Description The e5130 contains 4 independent driver outputs with an ON resistance of typ. 25 W 15 W tor the P-channel output transistors and typ. 20 W (13 W) for the N-channel output transistors; at a supply voltage of 1.5 V (3 V). To


    Original     		PDF e5130 e5130 D-74025 08-May-96 RL12 RL34 telefunken tdr

    2594

    Abstract: RL12 RL34
    Text: e5130 Low Voltage CMOS Driver Circuit Description The e5130 contains 4 independent driver outputs with an ON resistance of typ. 25 W 15 W tor the P-channel output transistors and typ. 20 W (13 W) for the N-channel output transistors; at a supply voltage of 1.5 V (3 V). To


    Original     		PDF e5130 e5130 D-74025 13-Mar-01 2594 RL12 RL34

    Heatsinks

    Abstract: picot
    Text: Aufsteckkühlkörper Clip-on Heatsinks Dissipateurs enfichables 0,6 8,5 13 16 10 27 FK 243 MI 247 O 20 1,2 18,7 K/W ohne Lötfahne without solder lug sans paillette picot 0,6 13 8,5 3,2 16 10 0,6 27 FK 243 MI 247 H 20 1,2 19 K/W with solder lug for horizontal installation


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Aufsteckkühlkörper Clip-on heatsinks Dissipateurs enfichables C 0,6 8,5 13 16 10 27 FK 243 MI 247 O 20 1,2 18,7 K/W ohne Lötfahne without solder lug sans paillette picot 0,6 13 8,5 3,2 16 10 0,6 27 FK 243 MI 247 H 20 1,2 19 K/W with solder lug for horizontal installation


    Original     		PDF

    telefunken tdr

    Abstract: RL12 RL34 MP114
    Text: e5130 TELEFUNKEN Semiconductors Low Voltage CMOS Driver Circuit Description The e5130 contains 4 independent driver outputs with an ON resistance of typ. 25 W 15 W tor the P-channel output transistors and typ. 20 W (13 W) for the N-channel output transistors; at a supply voltage of 1.5 V (3 V). To obtain a


    Original     		PDF e5130 e5130 D-74025 telefunken tdr RL12 RL34 MP114

    Untitled

    Abstract: No abstract text available
    Text: 2N412 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)13 I(C) Max. (A)15m Absolute Max. Power Diss. (W)80m Maximum Operating Temp (øC)71õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)13 h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF 2N412 Freq16MÂ

    fw26025

    Abstract: FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH
    Text: Power bipolar transistors TO-264 Device type NPN VCEO [V] PNP HD1530JL* HD1750JL* 700 800 VCBO VCES VCEV [V] IC [A] 1500 1700 26 24 hFE @ IC VCE Ptot [W] 200 200 VCE sat @ IC IB Application Min Max [A] [V] [V] [A] [mA] 5.5 5.5 9 9.5 13 12 5 5 2 3 13 12 3250


    Original     		PDF O-264 HD1530JL* HD1750JL* O-220 OT-223 O-220FP OT23-6L O-126 O-220FH ISOWATT218 fw26025 FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH

    Untitled

    Abstract: No abstract text available
    Text: A U-Extruded heatsinks art. no. Rth [K/W] B 25 9 20 15 15 1,5 10 5 C 12 SK 12 . 25 50 100 [mm] 75 . please indicate: 1000 mm art. no. D Rth [K/W] 25 14 20 15 13 1,5 10 E 5 17 25 50 75 100 [mm] 100 150 200 [mm] SK 13 . please indicate: F . 25 35 mm


    Original     		PDF

    FAN CONTROL BY USING THERMISTOR lm358

    Abstract: w83391ts NPN transistor 2n 3904 temperature sensor LM358 temperature controlled fan FAN transistor 3904
    Text: W83L786NR W83L786NG Nuvoton H/W Monitoring IC W83L786NR/ W83L786NG W83L786NR Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB MAIN CONTENTS Pin 10: from Vram_SEN to VTIN1 Pin 11: from Vcore_SEN to D1 P.13 10/15/04 0.6 N/A Pin 13: from Vref to Vcore_SEN


    Original     		PDF W83L786NR W83L786NG W83L786NR/ W83L786NG FAN CONTROL BY USING THERMISTOR lm358 w83391ts NPN transistor 2n 3904 temperature sensor LM358 temperature controlled fan FAN transistor 3904

    W83L786NG

    Abstract: pin diagram of op-amp ic 741 opamp Lm358 pin function VR2B transistor c 839
    Text: W83L786NR W83L786NG Winbond H/W Monitoring IC W83L786NR/ W83L786NG W83L786NR Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB MAIN CONTENTS Pin 10: from Vram_SEN to VTIN1 Pin 11: from Vcore_SEN to D1 P.13 10/15/04 0.6 N/A Pin 13: from Vref to Vcore_SEN


    Original     		PDF W83L786NR W83L786NG W83L786NR/ W83L786NG pin diagram of op-amp ic 741 opamp Lm358 pin function VR2B transistor c 839

    PWM 12V fan speed control circuit winbond

    Abstract: temperature control using lm358
    Text: W83L786NR W83L786NG Winbond H/W Monitoring IC W83L786NR/ W83L786NG W83L786NR Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB MAIN CONTENTS Pin 10: from Vram_SEN to VTIN1 Pin 11: from Vcore_SEN to D1 P.13 10/15/04 0.6 N/A Pin 13: from Vref to Vcore_SEN


    Original     		PDF W83L786NR W83L786NG W83L786NR/ W83L786NG PWM 12V fan speed control circuit winbond temperature control using lm358

    AM0912-080

    Abstract: S042
    Text: AM0912-080 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 90 W MIN. WITH 13 dB GAIN BANDWIDTH 225 MHz


    Original     		PDF AM0912-080 AM0912-080 S042

    W83L78

    Abstract: W83L786NG W83L786NR
    Text: W83L786NR W83L786NG Winbond H/W Monitoring IC W83L786NR/NG PRELIMINARY W83L786NR Data Sheet Revision History Pages Dates Version Version on Web Main Contents Pin 10: from Vram_SEN to VTIN1 Pin 11: from Vcore_SEN to D- 1 P.13 10/15/04 0.6 N/A Pin 13: from Vref to Vcore_SEN


    Original     		PDF W83L786NR W83L786NG W83L786NR/NG W83L78

    HF220-50

    Abstract: ASI10614
    Text: HF220-50 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF220-50 is a 50 V epitaxial silicon NPN transistor, designed for SSB communications. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 13 dB Typical at 220 W/30 MHz • IMD3 = -30 dBc Max. at 220 W PEP


    Original     		PDF HF220-50 HF220-50 112x45° ASI10614

    Untitled

    Abstract: No abstract text available
    Text: MRF429 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF429 is Designed for High voltage applications up tp 30 MHz PACKAGE STYLE .500 4L FLG .112x45° FEATURES: L A C E FULL R • PG = 13 dB min. at 150 W/30 MHz • IMD3 = -32 dBc max. at 150 W PEP


    Original     		PDF MRF429 MRF429 112x45Â

    sot123 package

    Abstract: BLF543 BLF221 sot 123 blf246b flange SOT-123
    Text: 65 RF/Microwave Devices RF Power MOS Transistors cont. Type No. Package Outline Load Power (W) V DS (V) f (MHz) Source Gain (dB) 28 28 28 28 28 50 28 28 50 28 50 28 50 28 50 175 175 175 175 175 108 175 108 108 108 108 175 108 175 108 14 typ 13 13 13 14 19 typ


    OCR Scan     		PDF BLF241 BLF242 BLF244 BLF245 BLF245B BLF175 BLF246B BLF246 BLF276 BLF147 sot123 package BLF543 BLF221 sot 123 flange SOT-123

    BU102

    Abstract: BDX71 40636 2N3055V BSV95 BDX73 BSX27 BU100A BD663B transistor bu102
    Text: SG S-ATES Semiconductors T ran sistors-N P N N P N Switching Transistors C ode o < < o w REFERENCE T A B LE lc Range m A Is 13 13 13 BSV90 B SV 9 1 BSV92 BSV95 BSX20 13.5 15 15 50 15 1-100 10-100 1-100 10-800 1-500 B SX 2 6 B SX 2 7 BSX28 BSX30 BSX32 15


    OCR Scan     		PDF BSV90 30801C BSV91 0802A BSV92 30803X BSV95 4774A BSX20 19077B BU102 BDX71 40636 2N3055V BDX73 BSX27 BU100A BD663B transistor bu102

    2SC5053

    Abstract: W0401
    Text: h 2SC5053 /'Transistors i~M NPN v U = 3 > h -7 Epitaxial Planar NPN Silicon Transistor O C / * C f C O » w w O w ^ O /Medium Power Amp. • 1 $ £ 13/Dimensions Unit : mm) 1) P c= 2 W T'£>3 (40X40X0.7mm iz 7 5 7 ? & m m )o 2) Low Vce ( s a t) = 0 .1 2V


    OCR Scan     		PDF 2SC5053 13/Dimensions 40X40X0 500mA/50mA) 2SA1900 2SA1900. SC-62 2SC5053 W0401

    QS 100 NPN Transistor

    Abstract: PG1157 PG1158 PG1159 PG1160 PG1161 PG1162 PG1163 PG1164 PG1165
    Text: .0043592 A P I ELECTRONICS TN f. A P I ELECTRONICS INC A IA 0089 13 / -o fj-/ f n D eT| Ö D E S T E DDGODflT 1 INTERIM BULLETIN Subject to Revision W ithout Notice -July 15, 1971 PIRCO tñ r i POWER TRANSISTOR ENGINEERING BULLETIN S s X 1 I* W w ELECTBOniCS inc.


    OCR Scan     		PDF 13A00 PG1157 PG1165, PG1158 PG1159 PG1160 PG1161 PG1162 PG1163 QS 100 NPN Transistor PG1159 PG1162 PG1164 PG1165

    LM339 APPLICATIONS

    Abstract: LM339 APPLICATIONS zero crossing "Op Amp" lm339 8 pin ic lm339 lm339 LM339 application note LM139 LM139A LM139D LM339M
    Text: FAIRCHILD s e m ic o n d u c t o r Tm L M 13 9 / L M 13 9 A , w w w .fa ir c h ild s e m i.c o m L M 339 Si n g l e S u p p l y Quad C o m p a r a t o r s Features Description • Input common mode voltage range includes ground • Wide single supply voltage range— 2V to 36V


    OCR Scan     		PDF 39/LM LM339 DS3000139 LM339 APPLICATIONS LM339 APPLICATIONS zero crossing "Op Amp" lm339 8 pin ic lm339 lm339 LM339 application note LM139 LM139A LM139D LM339M

    CTS 100-20

    Abstract: old ic clock ha 1555 iw 1677
    Text: 19-1124; Rev 0; 9/96 AI/JXIVM L o w - P o w e r , 13-Bi t V o l t a g e - O u t p u t DAC w i t h Se r i a l I n t e r f a c e Features The MAX535 combines a low-power, voltage-output, 13-bit digital-to-analog converter DAC and a precision output amplifier in an 8-pin package. The am plifier’s


    OCR Scan     		PDF 13-Bi MAX535 MAX535 13-bit gai18 CTS 100-20 old ic clock ha 1555 iw 1677

    Untitled

    Abstract: No abstract text available
    Text: 19-1124; Rev 1; 12/96 A lilX IA I L o w - P o w e r , 13-Bi t V o l t a g e - O u t p u t DACs w i t h Se r i a l I n t e r f a c e Features The MAX535/MAX5351 com bine a low-power, voltageoutput, 13-bit digital-to-analog converter DAC and a precision output am plifier in an 8-pin pMAX or DIP pack­


    OCR Scan     		PDF 13-Bi MAX535/MAX5351 MAX535/MAX5351