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    12X20MM Price and Stock

    SOCKET SCREWS M12X20MMBTN SS PS

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    Bisco Industries M12X20MMBTN SS PS 34
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    Panasonic Electronic Components EEU-FR1H471B

    Aluminum Electrolytic Capacitors - Radial Leaded 50VDC 470uF 12x20mm LS 5.0mm
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    TTI EEU-FR1H471B Ammo Pack 21,500 500
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    Panasonic Electronic Components EEU-FR1V102

    Aluminum Electrolytic Capacitors - Radial Leaded 35VDC 1000uF 12x20mm LS5mm
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    TTI EEU-FR1V102 Bulk 33,250 25
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    Panasonic Electronic Components EEU-FR1H471

    Aluminum Electrolytic Capacitors - Radial Leaded 50VDC 470uF 12x20mm LS5mm
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    TTI EEU-FR1H471 Bulk 4,300 100
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    Panasonic Electronic Components EEU-FR1E152B

    Aluminum Electrolytic Capacitors - Radial Leaded 25VDC 1500uF 12x20mm LS 5.0mm
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    TTI EEU-FR1E152B Ammo Pack 500 500
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    12X20MM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KS32P6632

    Abstract: NAND FLASH 64MB sample code read and write flash memory PCMCIA FLASH CARD 10MB TSOP 14X20 lexar cf 64mb controller Datasheet toshiba NAND Flash MLC vending machine source code pcmcia flash memory 8MB ata VG365
    Text: Mass Storage Application Memory Product & Technology Division 2000.03.15 Product Planning & Application Engineering The Leader in Memory Technology ELECTRONICS Mass MassStorage StorageApplication ApplicationArea Area Flash Card Small Form Factor Card PCMCIA Card Form Factor


    Original     		PDF 056KB KS32P6632 NAND FLASH 64MB sample code read and write flash memory PCMCIA FLASH CARD 10MB TSOP 14X20 lexar cf 64mb controller Datasheet toshiba NAND Flash MLC vending machine source code pcmcia flash memory 8MB ata VG365

    M29DW323D

    Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns


    Original     		PDF M29DW324DT M29DW324DB TSOP48 M29DW323D TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT

    Untitled

    Abstract: No abstract text available
    Text: M29DW640F 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words


    Original     		PDF M29DW640F TSOP48 24Mbit

    Untitled

    Abstract: No abstract text available
    Text: M59PW016 16 Mbit 1Mb x16, Uniform Block 3V Supply LightFlash Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ MASK-ROM PIN-OUT COMPATIBLE SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program


    Original     		PDF M59PW016 110ns

    flash card 68 pin

    Abstract: Sandisk TSOP hitachi single chip SANDISK NAND sandisk Nand flash part number Hitachi DSA00197 FLASH TRANSLATION LAYER FTL
    Text: Aufbau/end HELIO.April 06.11.1998 19:08 Uhr Seite 2 April 1998 HITACHI CARD FAMILY Aufbau/end HELIO.April 06.11.1998 19:08 Uhr Seite 3 Hitachi Card Family Flash-based memory cards are used in a variety of compact devices, including notebook computers, personal organisers and


    Original     		PDF 150MB D-85622 flash card 68 pin Sandisk TSOP hitachi single chip SANDISK NAND sandisk Nand flash part number Hitachi DSA00197 FLASH TRANSLATION LAYER FTL

    16202

    Abstract: HY23V16202 HY23V16202D HY23V16202S HY23V16202T 48TSOP
    Text: 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Description The HY23V16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery


    Original     		PDF 1MX16/2MX8 HY23V16202 HY23V16202 42pin 100/120ns 44TSOP-II 16202 HY23V16202D HY23V16202S HY23V16202T 48TSOP

    M29DW324D

    Abstract: M29DW324DB M29DW324DT TFBGA48 TFGBA48
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW324DT M29DW324DB TSOP48 16Mbit 16Mbit TFBGA63 M29DW324D M29DW324DB M29DW324DT TFBGA48 TFGBA48

    M29W320E

    Abstract: M29W320EB M29W320ET TFBGA48
    Text: M29W320ET M29W320EB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original     		PDF M29W320ET M29W320EB M29W320E M29W320EB M29W320ET TFBGA48

    IS1651

    Abstract: M29DW323D M29DW323DB M29DW323DT TFBGA48
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW323DT M29DW323DB 24Mbit IS1651 M29DW323D M29DW323DB M29DW323DT TFBGA48

    Untitled

    Abstract: No abstract text available
    Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW640D TSOP48 24Mbit TFBGA63

    Untitled

    Abstract: No abstract text available
    Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS PAGE READ MODE


    Original     		PDF M29DW640D TSOP48 24Mbit TFBGA63

    Untitled

    Abstract: No abstract text available
    Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW640D 24Mbit

    Untitled

    Abstract: No abstract text available
    Text: M29DW641F 64 Mbit 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP/WP=12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words


    Original     		PDF M29DW641F 24Mbit

    M29W640

    Abstract: 2298H AI12781 M29W640GH AI12782 M29W640GB 3A00 M29W640GT
    Text: M29W640GH, M29W640GL M29W640GT, M29W640GB 64 Mbit 8Mb x8 or 4Mb x16, Page 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		PDF M29W640GH, M29W640GL M29W640GT, M29W640GB Word/32 M29W640GH/L: M29W640GT/B M29W640 2298H AI12781 M29W640GH AI12782 M29W640GB 3A00 M29W640GT

    Untitled

    Abstract: No abstract text available
    Text: M59PW032 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ MASK-ROM PIN-OUT COMPATIBLE SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program


    Original     		PDF M59PW032 110ns 0020h 88AEh

    Untitled

    Abstract: No abstract text available
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW323DT M29DW323DB 24Mbit

    Untitled

    Abstract: No abstract text available
    Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW640D TSOP48 24Mbit TFBGA63

    Untitled

    Abstract: No abstract text available
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns


    Original     		PDF M29DW324DT M29DW324DB TSOP48 16Mbit 16Mbit TFBGA63

    M29DW323D

    Abstract: M29DW323DB M29DW323DT
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns


    Original     		PDF M29DW323DT M29DW323DB TSOP48 M29DW323D M29DW323DB M29DW323DT

    CM316

    Abstract: toshiba tc55 TC55VCM316BSGN TC55VCM316BTGN TC55YCM316BSGN TC55YCM316BTGN TC55YEM316BXGN55 TC55VCM316BSGN55 TC55VEM316B
    Text: TC55VCM316BTGN, TC55VCM316BSGN, TC55VEM316BXGN45,55 TC55YCM316BTGN, TC55YCM316BSGN, TC55YEM316BXGN55,70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 524,288-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM316B, TC55VEM316B, TC55YCM316B and TC55YEM316B is a 8,388,608-bit static random


    Original     		PDF TC55VCM316BTGN, TC55VCM316BSGN, TC55VEM316BXGN45 TC55YCM316BTGN, TC55YCM316BSGN, TC55YEM316BXGN55 288-WORD 16-BIT TC55VCM316B, TC55VEM316B, CM316 toshiba tc55 TC55VCM316BSGN TC55VCM316BTGN TC55YCM316BSGN TC55YCM316BTGN TC55VCM316BSGN55 TC55VEM316B

    W29GL064C

    Abstract: No abstract text available
    Text: W29GL064C 64M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE Publication Release Date: October 18, 2011 Preliminary - Revision E BLANK W29GL064C Table of Contents 1 2 3 4 5 6 7 GENERAL DESCRIPTION . 1


    Original     		PDF W29GL064C 64M-BIT W29GL064C

    mx29lw321

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29LW321T/B 32M-BIT [4M x 8 / 2M x 16] ONLY CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • • • • • • Supply voltage range: 2.7V to 3.6V 2M word x 16 Bit /4M Byte x 8 Bit switchable Fast access time: 70/80/90ns 20mA maximum active current


    Original     		PDF MX29LW321T/B 32M-BIT 70/80/90ns word/256 APR/01/2002 JUN/04/2002 PM0851 mx29lw321

    M29W320E

    Abstract: M29W320EB M29W320ET TFBGA48
    Text: M29W320ET M29W320EB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original     		PDF M29W320ET M29W320EB M29W320E M29W320EB M29W320ET TFBGA48

    M5M29GB160BVP

    Abstract: M5M29GT160BVP
    Text: MITSUBISHI LSIs M5M29GBT160BVP-80 16,777,216-BIT 2097,152-WORD BY 8-BIT /1048,576-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M ITSUBISHI Mobile FLASH M 5M 29G B/T160BVP are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Mem ories with


    OCR Scan     		PDF M5M29GBT160BVP-80 216-BIT 152-WORD 576-WORD BY16-BIT) M5M29GB/T160BVP 216-bit M5M29GB160BVP M5M29GT160BVP