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    12W 01 TRANSISTOR Search Results

    12W 01 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    12W 01 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57789 890-915MHz, 12.5V, 12W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm © GHh PIN : DPin ©VCC1 @ VBB VCC2 ®Po ®GND RF INPUT 1st. DC SUPPLY BASE BIAS 2nd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted


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    M57789 890-915MHz, DDlb272 PDF

    transistor SMD 12W MOSFET

    Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
    Text: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the


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    HVV1011-600 1030MHz 1090MHz. transistor SMD 12W MOSFET transistor SMD 12W transistor JE 1090 smd transistor code 12w PDF

    AIRBORNE DME

    Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
    Text: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with


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    HVV1012-550 1025MHz 1150MHz. AIRBORNE DME transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12 PDF

    AP3988

    Abstract: No abstract text available
    Text: DIO 4426 Why Diodes AC-DC1 final _- 09/10/2014 01:47 Page 1 WHY DIODES – AC-DC1 Why DIODES? AC-DC Controllers & Switchers High Reliability Cost-Effective Solutions Primary-Side Regulation Controllers Primary-Side Regulation Switchers Primary-side control for eliminating opto-coupler


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    transistor/650V cosAP3776 APR3415 AP3785 AP3983 AP3125 AS431 OT23-6 AP3988 PDF

    12W92

    Abstract: 4.25mhz s0151 25CC M105 SD1511-08 SD1511-8 sd1151 SD11511-8 12w 92
    Text: M í ^Products M l l f f / v f j-im -i r - S f Jl P rog resa P o w ered b y T e c h no log y 140 Com merce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 S D 1 5 1 1-8 RF & MICROWAVE TRANSISTORS UHF PULSE POWER COMMON EMITTER 12W TYPICAL CW 15W TYPICAL PULSED


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    PA18936-1013 SD1511-8 SD1511-08 SD11511-8 S88SD1S11 425MHz SB8S01S1VB S88SD1511-8-0? 12W92 4.25mhz s0151 25CC M105 SD1511-8 sd1151 SD11511-8 12w 92 PDF

    2SB1331

    Abstract: 2SD2007
    Text: h 7 > y 7,2 /Transistors 2SB1331 2SB1331 X t i 2 * y t JU7 ° \ s - j - f ó PNP V V = i> h 7 > y 7 2 Epitaxial Planar PNP Silicon Transistor Cf3t i : f r * i lflïffl/M e d iu m Power Amp. íl-Jfí'+íiH /D im ensions Unit : mm 1) lc p = —3A, P c = 1 .2 W (D *h H * o


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    2SB1331 2SB1331 2SD2007 2SD2007. 2SD2007 PDF

    2N3055 power amplifier circuit

    Abstract: 40636 40363 300W TRANSISTOR AUDIO AMPLIFIER 200w silicon audio power transistor 200W TRANSISTOR AUDIO AMPLIFIER 40872 2N3439 2N4063 40412
    Text: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6.5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386


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    2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) 2N3055 power amplifier circuit 40636 40363 300W TRANSISTOR AUDIO AMPLIFIER 200w silicon audio power transistor 200W TRANSISTOR AUDIO AMPLIFIER 40872 2N3439 2N4063 40412 PDF

    Untitled

    Abstract: No abstract text available
    Text: r= J S G S -T H O M S O N * 7 # . Mtg^OULiCTKOliaBtgi AM 1517-012 RF & MICROWAVE TRANSISTORS SATELLITE COM M UNICATIONS APPLICATIONS • REFRACTORY/GOLD METALLIZATION > EM ITTER SITE BALLASTED ■ oo:1 VSWR CAPABILITY ■ LOW THERM AL RESISTANCE H IN PU T/O U TPU T MATCHING


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    AM1517-012 AM1517-012 PDF

    kec kta

    Abstract: 9014 kec KTA966A 966a transistor 9012 TRANSISTOR 9014 KTC388A 2236A KTC2120 KTC2068
    Text: 0 TV TRANSISTOR ELECTRICAL CHARACTERISTICS Ta = 25 C MAXIMUM RATINGS USE TYPE VCEO (V) lC (mA) VCE (sat) MAX hFE TJ ICBO (mW) <°C) ( m A) VCB (V) PC [E (mA) VCE (V) ic (mA) (V) C o b ,* Crc Typ (MIN) h (MHz) VCE (V) 1c (mA) - (400) 10 4 Ic (mA) Iß (mA)


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    382/KTN 383/KTN 88A/KTN 2229/KTN O-92A) KTC90U KTC9013 kec kta 9014 kec KTA966A 966a transistor 9012 TRANSISTOR 9014 KTC388A 2236A KTC2120 KTC2068 PDF

    SFH617-3

    Abstract: vfd circuit diagram for siemens siemens VFD availability siemens GR 60 rectifier siemens GR 40 rectifier TDA16822 AN-SMPS-1683X-1 N27 OL inductor flycal excel sfh617
    Text: Version 1.2 , May 2000 Application Note AN-SMPS-1683X – 1 CoolSET TDA16831 . 34 for OFF – Line Switch Mode Power Supplies Authors: Harald Zöllinger Rainer Kling Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r


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    AN-SMPS-1683X TDA16831 TDA1683X Room14J1 Room1101 SFH617-3 vfd circuit diagram for siemens siemens VFD availability siemens GR 60 rectifier siemens GR 40 rectifier TDA16822 AN-SMPS-1683X-1 N27 OL inductor flycal excel sfh617 PDF

    siemens GR 60 rectifier

    Abstract: B41826 vfd circuit diagram for siemens siemens GR 40 rectifier flycal TDA16822 AN-SMPS-1683X-1 TDA1683X SFH617-3 siemens GR 90 rectifier
    Text: Version 1.2 , May 2000 Application Note AN-SMPS-1683X – 1 CoolSET TDA16831 . 34 for OFF – Line Switch Mode Power Supplies Authors: Harald Zöllinger Rainer Kling Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r


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    AN-SMPS-1683X TDA16831 TDA1683X Room14J1 Room1101 siemens GR 60 rectifier B41826 vfd circuit diagram for siemens siemens GR 40 rectifier flycal TDA16822 AN-SMPS-1683X-1 SFH617-3 siemens GR 90 rectifier PDF

    dual tracking power supply

    Abstract: CA3094T thermistor ntc 180m CA3094 0MA810 AN6048 transistor 2sc 1014 P-8609 CA3080 CA3094A
    Text: M3DES71 H A OGSSTTD R R T33 • H AS I S C * A S E M I C O N D U C T O R M 'I f i Q d M Programmable Power Switch/Amplifier for Control and General Purpose Applications April 1994 Features Description • • • • • The CA3094 is a differential input power control switch/


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    M3DES71 CA3094T, CA3094AT, CA3094BT, AN6048 AN6048. CA3094 dual tracking power supply CA3094T thermistor ntc 180m 0MA810 AN6048 transistor 2sc 1014 P-8609 CA3080 CA3094A PDF

    TDA16822

    Abstract: ferrite core transformer calculation formula siemens GR 60 rectifier AN-SMPS-1683X-1 B41826 flycal TDA16831 SFH617-3 siemens VFD availability epcos ferrite
    Text: Version 1.3 , Sept. 2000 Application Note AN-SMPS-1683X – 1 CoolSET TDA16831 . 34 for OFF – Line Switch Mode Power Supplies Authors: Harald Zöllinger Rainer Kling Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply


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    AN-SMPS-1683X TDA16831 TDA1683X Room14J1 Room1101 TDA16822 ferrite core transformer calculation formula siemens GR 60 rectifier AN-SMPS-1683X-1 B41826 flycal TDA16831 SFH617-3 siemens VFD availability epcos ferrite PDF

    2SA678

    Abstract: transistor 1247a 2SC911 sf 1605a 2SA1007A 2SC1207 2sa705 2SC1271 2SC1271A 2SC911A
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M -EiiO SW H E N ew T ransistor Manual lists all the transistors registered w ith the Electronic Industries A ssociation of Japan (EIAJ), arranged in a manner easy to look up. W e hope that you w ill m ake full use of the data provided in this manual by referring to the Japanese-English


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    2139a 2SA968A 2238b 2SA968B 2SA678 transistor 1247a 2SC911 sf 1605a 2SA1007A 2SC1207 2sa705 2SC1271 2SC1271A 2SC911A PDF

    2N1042

    Abstract: 2N1043 2N1044 2N1045 Germanium power 3011 fe
    Text: ê MJL-S-19500/137C 2l_Jung^9,n _ SUPERSEDING MIL-S-19500/137B 7 A p ril 1964 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN P, GERMANIUM, POWER f\AC i irL O ft\fi r\An rrnti/MT/^ti m n u u u n Oxti ¿¿'iau?«; This specification Is m andatory fo r use by a ll D epart­


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    ML-S-19500/137C MIL-S-19500/137B 2N1042 2N1043 2N1044 2N1045 2N1043 2N1044 Germanium power 3011 fe PDF

    PA241

    Abstract: PA241CE
    Text: * )70-5"(&108&301&3"5*0/"-".1-*'*&3 PA241 M I C R O T E C H N O L O G Y 888"1&9.*$305&$)$0.  "1&9   FEATURES • RoHS COMPLIANT • MONOLITHIC MOS TECHNOLOGY • LOW COST • HIGH VOLTAGE OPERATION—350V • LOW QUIESCENT CURRENT TYP.—2.2mA


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    PA241 OPERATION--350V CURRENT--120mA FORM--CPA241 24-pin 10-pin PA241 PeOEUq75À v03OEUqc" PA241CE PDF

    Untitled

    Abstract: No abstract text available
    Text: * )70-5"(&108&301&3"5*0/"-".1-*'*&3 PA241 M I C R O T E C H N O L O G Y 888"1&9.*$305&$)$0.  "1&9   FEATURES • RoHS COMPLIANT • MONOLITHIC MOS TECHNOLOGY • LOW COST • HIGH VOLTAGE OPERATION—350V • LOW QUIESCENT CURRENT TYP.—2.2mA


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    PA241 OPERATION--350V CURRENT--120mA FORM--CPA241 24-pin 10-pin PA241U PDF

    Untitled

    Abstract: No abstract text available
    Text: * )70-5"(&108&301&3"5*0/"-".1-*'*&34 1" . * $ 3 0 5 & $ ) / 0 - 0 ( : 888"1&9.*$305&$)$0.  "1&9   FEATURES • RoHS COMPLIANT • MONOLITHIC MOS TECHNOLOGY • LOW COST • HIGH VOLTAGE OPERATION—350V • LOW QUIESCENT CURRENT TYP.—2.2mA


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    OPERATION--350V CURRENT--120mA FORM--CPA241 24-pin 10-pin PA241U PDF

    MO-166

    Abstract: PA241DW SIP RESISTOR Capacitor 4.7K NETWORK PA241 PA241U
    Text: * )70-5"(&108&301&3"5*0/"-".1-*'*&3 PA241 M I C R O T E C H N O L O G Y 888"1&9.*$305&$)$0.  "1&9   FEATURES • RoHS COMPLIANT • MONOLITHIC MOS TECHNOLOGY • LOW COST • HIGH VOLTAGE OPERATION—350V • LOW QUIESCENT CURRENT TYP.—2.2mA


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    PA241 OPERATION--350V CURRENT--120mA FORM--CPA241 24-pin 10-pin PA241 PA241U MO-166 PA241DW SIP RESISTOR Capacitor 4.7K NETWORK PDF

    Untitled

    Abstract: No abstract text available
    Text: * )70-5"(&108&301&3"5*0/"-".1-*'*&34 1" . * $ 3 0 5 & $ ) / 0 - 0 ( : 888"1&9.*$305&$)$0.  "1&9   FEATURES • RoHS COMPLIANT • MONOLITHIC MOS TECHNOLOGY • LOW COST • HIGH VOLTAGE OPERATION—350V • LOW QUIESCENT CURRENT TYP.—2.2mA


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    OPERATION--350V CURRENT--120mA FORM--CPA241 24-pin 10-pin PA241U PDF

    2T301

    Abstract: a49a OC26 OC26 transistor 2S131 2SB121 2SB128A 2T302 2T303 2T304
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : • M -EiiO SW H E New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. W e hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


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    Tc-25 2SD1110A 2T301 a49a OC26 OC26 transistor 2S131 2SB121 2SB128A 2T302 2T303 2T304 PDF

    719VXA-A017AO

    Abstract: ultrasonic transceiver R283E panasonic ultrasonic 40 khz transducer 719VXA-A018YSU Panasonic Ultrasonic transducer 125 khz ultrasonic RECEIVER CIRCUIT EFR-OTB40K2 pulse stretcher circuit diagram High Q Ultrasonic Transducer
    Text: LM1812 National Semiconductor LM1812 Ultrasonic Transceiver General Description The LM1812 is a general purpose ultrasonic transceiver de­ signed for use in a variety of ranging, sensing, and commu­ nications applications. The chip contains a pulse-modulated


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    LM1812 TL/H/7892-14 vsC17 vsC18 TL/H/7892-15 TL/H/7892-17 CAN-1A901HM 719VXA-A018YSU R283E 719VXA-A017AO ultrasonic transceiver R283E panasonic ultrasonic 40 khz transducer 719VXA-A018YSU Panasonic Ultrasonic transducer 125 khz ultrasonic RECEIVER CIRCUIT EFR-OTB40K2 pulse stretcher circuit diagram High Q Ultrasonic Transducer PDF

    transistor smd 5DW 73

    Abstract: sipex 3232 BU-61588P3 SD-14621DX SD14621 sdc 7500 natel 09059 MPC 1298 V 5962-8952211YC 95003-01HXA
    Text: Qualifications Validated Annually QUALIFIED MANUFACTURERS LIST OF CUSTOM HYBRID MICROCIRCUITS QUALIFIED UNDER MILITARY SPECIFICATION MIL-PRF-38534 CUSTOM HYBRID MICROCIRCUITS QML-38534-29 30-Jun-99 SUPERSEDING QML-38534-28 31-Mar-99 CUSTOM HYBRID MICROCIRCUITS


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    MIL-PRF-38534 QML-38534-29 30-Jun-99 QML-38534-28 31-Mar-99 MIL-PRF-38534. 16-BIT, transistor smd 5DW 73 sipex 3232 BU-61588P3 SD-14621DX SD14621 sdc 7500 natel 09059 MPC 1298 V 5962-8952211YC 95003-01HXA PDF

    M5214L

    Abstract: UPC1190C TA7158P UPC1235C hitachi FM stereo MPX Decoder M5169P M51381P TA7157AP BA515 TA7204P
    Text: B3TOSHIBA TO SH I B A MODEL NO. DESCRIPTIONS TA 706 3P Pre-amplifier TA 7 0 6 6 P U n iv er sa l TA 71 20 P Pre-amplifier TA7122BP High vo lt ag e TA7129AP ff for car stereo amplifier for car st ereo pre-amplifier n ft TA 7 1 3 0 P EM-IE a m p l i f i e r with d e t e c t o r


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    TA7122BP TA7129AP TA7136AP TA7137P-ST TA7157AP TA7158P TA7200P UPC1204C UPC1190C UPC1185H M5214L UPC1190C TA7158P UPC1235C hitachi FM stereo MPX Decoder M5169P M51381P TA7157AP BA515 TA7204P PDF