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    12W 01 TRANSISTOR Search Results

    12W 01 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    12W 01 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor SMD 12W MOSFET

    Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
    Text: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the


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    PDF HVV1011-600 1030MHz 1090MHz. transistor SMD 12W MOSFET transistor SMD 12W transistor JE 1090 smd transistor code 12w

    AIRBORNE DME

    Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
    Text: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with


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    PDF HVV1012-550 1025MHz 1150MHz. AIRBORNE DME transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12

    AP3988

    Abstract: No abstract text available
    Text: DIO 4426 Why Diodes AC-DC1 final _- 09/10/2014 01:47 Page 1 WHY DIODES – AC-DC1 Why DIODES? AC-DC Controllers & Switchers High Reliability Cost-Effective Solutions Primary-Side Regulation Controllers Primary-Side Regulation Switchers Primary-side control for eliminating opto-coupler


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    PDF transistor/650V cosAP3776 APR3415 AP3785 AP3983 AP3125 AS431 OT23-6 AP3988

    SFH617-3

    Abstract: vfd circuit diagram for siemens siemens VFD availability siemens GR 60 rectifier siemens GR 40 rectifier TDA16822 AN-SMPS-1683X-1 N27 OL inductor flycal excel sfh617
    Text: Version 1.2 , May 2000 Application Note AN-SMPS-1683X – 1 CoolSET TDA16831 . 34 for OFF – Line Switch Mode Power Supplies Authors: Harald Zöllinger Rainer Kling Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r


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    PDF AN-SMPS-1683X TDA16831 TDA1683X Room14J1 Room1101 SFH617-3 vfd circuit diagram for siemens siemens VFD availability siemens GR 60 rectifier siemens GR 40 rectifier TDA16822 AN-SMPS-1683X-1 N27 OL inductor flycal excel sfh617

    siemens GR 60 rectifier

    Abstract: B41826 vfd circuit diagram for siemens siemens GR 40 rectifier flycal TDA16822 AN-SMPS-1683X-1 TDA1683X SFH617-3 siemens GR 90 rectifier
    Text: Version 1.2 , May 2000 Application Note AN-SMPS-1683X – 1 CoolSET TDA16831 . 34 for OFF – Line Switch Mode Power Supplies Authors: Harald Zöllinger Rainer Kling Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r


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    PDF AN-SMPS-1683X TDA16831 TDA1683X Room14J1 Room1101 siemens GR 60 rectifier B41826 vfd circuit diagram for siemens siemens GR 40 rectifier flycal TDA16822 AN-SMPS-1683X-1 SFH617-3 siemens GR 90 rectifier

    TDA16822

    Abstract: ferrite core transformer calculation formula siemens GR 60 rectifier AN-SMPS-1683X-1 B41826 flycal TDA16831 SFH617-3 siemens VFD availability epcos ferrite
    Text: Version 1.3 , Sept. 2000 Application Note AN-SMPS-1683X – 1 CoolSET TDA16831 . 34 for OFF – Line Switch Mode Power Supplies Authors: Harald Zöllinger Rainer Kling Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply


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    PDF AN-SMPS-1683X TDA16831 TDA1683X Room14J1 Room1101 TDA16822 ferrite core transformer calculation formula siemens GR 60 rectifier AN-SMPS-1683X-1 B41826 flycal TDA16831 SFH617-3 siemens VFD availability epcos ferrite

    PA241

    Abstract: PA241CE
    Text: * )70-5"(&108&301&3"5*0/"-".1-*'*&3 PA241 M I C R O T E C H N O L O G Y 888"1&9.*$305&$)$0.  "1&9   FEATURES • RoHS COMPLIANT • MONOLITHIC MOS TECHNOLOGY • LOW COST • HIGH VOLTAGE OPERATION—350V • LOW QUIESCENT CURRENT TYP.—2.2mA


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    PDF PA241 OPERATION--350V CURRENT--120mA FORM--CPA241 24-pin 10-pin PA241 PeOEUq75À v03OEUqc" PA241CE

    Untitled

    Abstract: No abstract text available
    Text: * )70-5"(&108&301&3"5*0/"-".1-*'*&3 PA241 M I C R O T E C H N O L O G Y 888"1&9.*$305&$)$0.  "1&9   FEATURES • RoHS COMPLIANT • MONOLITHIC MOS TECHNOLOGY • LOW COST • HIGH VOLTAGE OPERATION—350V • LOW QUIESCENT CURRENT TYP.—2.2mA


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    PDF PA241 OPERATION--350V CURRENT--120mA FORM--CPA241 24-pin 10-pin PA241U

    Untitled

    Abstract: No abstract text available
    Text: * )70-5"(&108&301&3"5*0/"-".1-*'*&34 1" . * $ 3 0 5 & $ ) / 0 - 0 ( : 888"1&9.*$305&$)$0.  "1&9   FEATURES • RoHS COMPLIANT • MONOLITHIC MOS TECHNOLOGY • LOW COST • HIGH VOLTAGE OPERATION—350V • LOW QUIESCENT CURRENT TYP.—2.2mA


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    PDF OPERATION--350V CURRENT--120mA FORM--CPA241 24-pin 10-pin PA241U

    MO-166

    Abstract: PA241DW SIP RESISTOR Capacitor 4.7K NETWORK PA241 PA241U
    Text: * )70-5"(&108&301&3"5*0/"-".1-*'*&3 PA241 M I C R O T E C H N O L O G Y 888"1&9.*$305&$)$0.  "1&9   FEATURES • RoHS COMPLIANT • MONOLITHIC MOS TECHNOLOGY • LOW COST • HIGH VOLTAGE OPERATION—350V • LOW QUIESCENT CURRENT TYP.—2.2mA


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    PDF PA241 OPERATION--350V CURRENT--120mA FORM--CPA241 24-pin 10-pin PA241 PA241U MO-166 PA241DW SIP RESISTOR Capacitor 4.7K NETWORK

    Untitled

    Abstract: No abstract text available
    Text: * )70-5"(&108&301&3"5*0/"-".1-*'*&34 1" . * $ 3 0 5 & $ ) / 0 - 0 ( : 888"1&9.*$305&$)$0.  "1&9   FEATURES • RoHS COMPLIANT • MONOLITHIC MOS TECHNOLOGY • LOW COST • HIGH VOLTAGE OPERATION—350V • LOW QUIESCENT CURRENT TYP.—2.2mA


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    PDF OPERATION--350V CURRENT--120mA FORM--CPA241 24-pin 10-pin PA241U

    transistor smd 5DW 73

    Abstract: sipex 3232 BU-61588P3 SD-14621DX SD14621 sdc 7500 natel 09059 MPC 1298 V 5962-8952211YC 95003-01HXA
    Text: Qualifications Validated Annually QUALIFIED MANUFACTURERS LIST OF CUSTOM HYBRID MICROCIRCUITS QUALIFIED UNDER MILITARY SPECIFICATION MIL-PRF-38534 CUSTOM HYBRID MICROCIRCUITS QML-38534-29 30-Jun-99 SUPERSEDING QML-38534-28 31-Mar-99 CUSTOM HYBRID MICROCIRCUITS


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    PDF MIL-PRF-38534 QML-38534-29 30-Jun-99 QML-38534-28 31-Mar-99 MIL-PRF-38534. 16-BIT, transistor smd 5DW 73 sipex 3232 BU-61588P3 SD-14621DX SD14621 sdc 7500 natel 09059 MPC 1298 V 5962-8952211YC 95003-01HXA

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57789 890-915MHz, 12.5V, 12W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm © GHh PIN : DPin ©VCC1 @ VBB VCC2 ®Po ®GND RF INPUT 1st. DC SUPPLY BASE BIAS 2nd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted


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    PDF M57789 890-915MHz, DDlb272

    12W92

    Abstract: 4.25mhz s0151 25CC M105 SD1511-08 SD1511-8 sd1151 SD11511-8 12w 92
    Text: M í ^Products M l l f f / v f j-im -i r - S f Jl P rog resa P o w ered b y T e c h no log y 140 Com merce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 S D 1 5 1 1-8 RF & MICROWAVE TRANSISTORS UHF PULSE POWER COMMON EMITTER 12W TYPICAL CW 15W TYPICAL PULSED


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    PDF PA18936-1013 SD1511-8 SD1511-08 SD11511-8 S88SD1S11 425MHz SB8S01S1VB S88SD1511-8-0? 12W92 4.25mhz s0151 25CC M105 SD1511-8 sd1151 SD11511-8 12w 92

    2N3055 power amplifier circuit

    Abstract: 40636 40363 300W TRANSISTOR AUDIO AMPLIFIER 200w silicon audio power transistor 200W TRANSISTOR AUDIO AMPLIFIER 40872 2N3439 2N4063 40412
    Text: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6.5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386


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    PDF 2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) 2N3055 power amplifier circuit 40636 40363 300W TRANSISTOR AUDIO AMPLIFIER 200w silicon audio power transistor 200W TRANSISTOR AUDIO AMPLIFIER 40872 2N3439 2N4063 40412

    Untitled

    Abstract: No abstract text available
    Text: r= J S G S -T H O M S O N * 7 # . Mtg^OULiCTKOliaBtgi AM 1517-012 RF & MICROWAVE TRANSISTORS SATELLITE COM M UNICATIONS APPLICATIONS • REFRACTORY/GOLD METALLIZATION > EM ITTER SITE BALLASTED ■ oo:1 VSWR CAPABILITY ■ LOW THERM AL RESISTANCE H IN PU T/O U TPU T MATCHING


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    PDF AM1517-012 AM1517-012

    kec kta

    Abstract: 9014 kec KTA966A 966a transistor 9012 TRANSISTOR 9014 KTC388A 2236A KTC2120 KTC2068
    Text: 0 TV TRANSISTOR ELECTRICAL CHARACTERISTICS Ta = 25 C MAXIMUM RATINGS USE TYPE VCEO (V) lC (mA) VCE (sat) MAX hFE TJ ICBO (mW) <°C) ( m A) VCB (V) PC [E (mA) VCE (V) ic (mA) (V) C o b ,* Crc Typ (MIN) h (MHz) VCE (V) 1c (mA) - (400) 10 4 Ic (mA) Iß (mA)


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    PDF 382/KTN 383/KTN 88A/KTN 2229/KTN O-92A) KTC90U KTC9013 kec kta 9014 kec KTA966A 966a transistor 9012 TRANSISTOR 9014 KTC388A 2236A KTC2120 KTC2068

    dual tracking power supply

    Abstract: CA3094T thermistor ntc 180m CA3094 0MA810 AN6048 transistor 2sc 1014 P-8609 CA3080 CA3094A
    Text: M3DES71 H A OGSSTTD R R T33 • H AS I S C * A S E M I C O N D U C T O R M 'I f i Q d M Programmable Power Switch/Amplifier for Control and General Purpose Applications April 1994 Features Description • • • • • The CA3094 is a differential input power control switch/


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    PDF M3DES71 CA3094T, CA3094AT, CA3094BT, AN6048 AN6048. CA3094 dual tracking power supply CA3094T thermistor ntc 180m 0MA810 AN6048 transistor 2sc 1014 P-8609 CA3080 CA3094A

    2SA678

    Abstract: transistor 1247a 2SC911 sf 1605a 2SA1007A 2SC1207 2sa705 2SC1271 2SC1271A 2SC911A
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M -EiiO SW H E N ew T ransistor Manual lists all the transistors registered w ith the Electronic Industries A ssociation of Japan (EIAJ), arranged in a manner easy to look up. W e hope that you w ill m ake full use of the data provided in this manual by referring to the Japanese-English


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    PDF 2139a 2SA968A 2238b 2SA968B 2SA678 transistor 1247a 2SC911 sf 1605a 2SA1007A 2SC1207 2sa705 2SC1271 2SC1271A 2SC911A

    NTE1833

    Abstract: FM COIL NTE1824 transistor 58w NTE1823 NTE1830 NTE1822 NTE1825 5kfl NTE1827
    Text: LINEAR INTEGRATED CIRCUITS NTE1822 Front View 10-Lead SIP, See Diag. 465 Module, 3 Output Voltage Regulator for VCR NTE1823 (Front View) 12-Lead SIP, See Diag. 495 Module, 4 Output Voltage Regulator for VCR NTE1824 7-Lead SIP, See Diag. 464 Module, DC Pulse Motor Driver for VCR,


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    PDF NTE1822 10-Lead NTE1823 12-Lead NTE1824 NTE1825 16-Lead NTE1830) NTE1832 NTE1833 FM COIL transistor 58w NTE1823 NTE1830 NTE1822 NTE1825 5kfl NTE1827

    2N1042

    Abstract: 2N1043 2N1044 2N1045 Germanium power 3011 fe
    Text: ê MJL-S-19500/137C 2l_Jung^9,n _ SUPERSEDING MIL-S-19500/137B 7 A p ril 1964 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN P, GERMANIUM, POWER f\AC i irL O ft\fi r\An rrnti/MT/^ti m n u u u n Oxti ¿¿'iau?«; This specification Is m andatory fo r use by a ll D epart­


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    PDF ML-S-19500/137C MIL-S-19500/137B 2N1042 2N1043 2N1044 2N1045 2N1043 2N1044 Germanium power 3011 fe

    2T301

    Abstract: a49a OC26 OC26 transistor 2S131 2SB121 2SB128A 2T302 2T303 2T304
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : • M -EiiO SW H E New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. W e hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


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    PDF Tc-25 2SD1110A 2T301 a49a OC26 OC26 transistor 2S131 2SB121 2SB128A 2T302 2T303 2T304

    719VXA-A017AO

    Abstract: ultrasonic transceiver R283E panasonic ultrasonic 40 khz transducer 719VXA-A018YSU Panasonic Ultrasonic transducer 125 khz ultrasonic RECEIVER CIRCUIT EFR-OTB40K2 pulse stretcher circuit diagram High Q Ultrasonic Transducer
    Text: LM1812 National Semiconductor LM1812 Ultrasonic Transceiver General Description The LM1812 is a general purpose ultrasonic transceiver de­ signed for use in a variety of ranging, sensing, and commu­ nications applications. The chip contains a pulse-modulated


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    PDF LM1812 TL/H/7892-14 vsC17 vsC18 TL/H/7892-15 TL/H/7892-17 CAN-1A901HM 719VXA-A018YSU R283E 719VXA-A017AO ultrasonic transceiver R283E panasonic ultrasonic 40 khz transducer 719VXA-A018YSU Panasonic Ultrasonic transducer 125 khz ultrasonic RECEIVER CIRCUIT EFR-OTB40K2 pulse stretcher circuit diagram High Q Ultrasonic Transducer

    M5214L

    Abstract: UPC1190C TA7158P UPC1235C hitachi FM stereo MPX Decoder M5169P M51381P TA7157AP BA515 TA7204P
    Text: B3TOSHIBA TO SH I B A MODEL NO. DESCRIPTIONS TA 706 3P Pre-amplifier TA 7 0 6 6 P U n iv er sa l TA 71 20 P Pre-amplifier TA7122BP High vo lt ag e TA7129AP ff for car stereo amplifier for car st ereo pre-amplifier n ft TA 7 1 3 0 P EM-IE a m p l i f i e r with d e t e c t o r


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    PDF TA7122BP TA7129AP TA7136AP TA7137P-ST TA7157AP TA7158P TA7200P UPC1204C UPC1190C UPC1185H M5214L UPC1190C TA7158P UPC1235C hitachi FM stereo MPX Decoder M5169P M51381P TA7157AP BA515 TA7204P