ixys dsei
Abstract: IRM 1200 80D-5
Text: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 1200 1200 IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Type DSEI 2x 30-12P DSEI 2x 31-12P 2x30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM
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30-12P
31-12P
ixys dsei
IRM 1200
80D-5
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DSEI IXYS 2x31-12B
Abstract: 2x31-12B
Text: DSEI 2x30-12P IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 Type DSEI 2x 30-12P Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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2x30-12P
30-12P
20070731a
DSEI IXYS 2x31-12B
2x31-12B
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IXYS DSEI 2X
Abstract: 2x28A
Text: DSEI 2x31-12P IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 Type DSEI 2x 31-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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2x31-12P
31-12P
20070731a
IXYS DSEI 2X
2x28A
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Epitaxial Diode FRED VRRM 1200 V 40 ns
Abstract: 2X161-12P diode 29
Text: DSEI 2x161-12P IFAVM = 2x128 A VRRM = 1200 V trr = 40 ns Fast Recovery Epitaxial Diode FRED ECO-PAC 2 Preliminary Data Sheet VRRM V V 1200 1200 A C -1 IK -10 LN -9 V X -18 Typ DSEI 2x161-12P Symbol Conditions IFRMS TVJ = TVJM 270 A IFAVM * TC = 70°C; rectangular; d = 0.5
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2x161-12P
2x128
Epitaxial Diode FRED VRRM 1200 V 40 ns
2X161-12P
diode 29
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Untitled
Abstract: No abstract text available
Text: DSEI 2x31-12P IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 Type DSEI 2x 31-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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2x31-12P
31-12P
20070731a
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Untitled
Abstract: No abstract text available
Text: 40574 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 50m Peak Curr. Tol.2.5m Total Cap. (F)12p Ip/Iv Min8.0 Vp80m Vv355m Fwd Volt @Ipeak Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)1.5 Neg Resist. Semiconductor MaterialGermanium
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Vp80m
Vv355m
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BYT 12 DIODE
Abstract: 12-P1 BYT 1000 BYT 32 diode marking H2
Text: BYT 12P-1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING Cathode connected to case s t A K SUITABLE APPLICATIONS FREE WHEELING DIODE IN CONVERTERS
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12P-1000
BYT 12 DIODE
12-P1
BYT 1000
BYT 32
diode marking H2
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Untitled
Abstract: No abstract text available
Text: MA4ST533-132 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min.200 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleChip
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MA4ST533-132
Voltage15
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Untitled
Abstract: No abstract text available
Text: 1N5444C18 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p C1/C2 Min. Capacitance Ratio3.1 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.400 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7
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1N5444C18
Voltage30
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Untitled
Abstract: No abstract text available
Text: GC1514H-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12pì C1/C2 Min. Capacitance Ratio4.2 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.1.6k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew
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GC1514H-
Voltage30
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Untitled
Abstract: No abstract text available
Text: GC1714H-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12pì C1/C2 Min. Capacitance Ratio7.0 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.900 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew
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GC1714H-
Voltage60
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Untitled
Abstract: No abstract text available
Text: V1626 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p C1/C2 Min. Capacitance Ratio2.0 V(RRM)(V) Rep.Pk.Rev. Voltage20 Q Factor Min.300 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)400m Semiconductor MaterialSilicon Package StyleDO-7
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V1626
Voltage20
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Untitled
Abstract: No abstract text available
Text: VAT77N74 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p C1/C2 Min. Capacitance Ratio5.25 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.1.0k f(co) Min. (Hz) Cut-off freq.50G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C
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VAT77N74
Voltage45
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Untitled
Abstract: No abstract text available
Text: AHV9803A Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p C1/C2 Min. Capacitance Ratio2.4 V(RRM)(V) Rep.Pk.Rev. Voltage10 Q Factor Min.200 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleDO-7
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AHV9803A
Voltage10
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12P1000
Abstract: No abstract text available
Text: BYT 12P-1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING Cathode connected to case A K SUITABLE APPLICATIONS FREE WHEELING DIODE IN CONVERTERS AND MOTOR CONTROL CIRCUITS
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12P-1000
O220AC
12P1000
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Untitled
Abstract: No abstract text available
Text: GC1714-36 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p C1/C2 Min. Capacitance Ratio7.0 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.1.2k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleDO-20var
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GC1714-36
Voltage60
StyleDO-20var
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Untitled
Abstract: No abstract text available
Text: HA1714H-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12pì C1/C2 Min. Capacitance Ratio7.0 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.900 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew
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HA1714H-
Voltage30
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12P-1000
Abstract: 12P1000
Text: BYT 12P-1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING Cathode connected to case A K SUITABLE APPLICATIONS FREE WHEELING DIODE IN CONVERTERS AND MOTOR CONTROL CIRCUITS
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12P-1000
O220AC
12P-1000
12P1000
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Untitled
Abstract: No abstract text available
Text: MV1868 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12pì C1/C2 Min. Capacitance Ratio2.8 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.200 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleDO-7
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MV1868
Voltage60
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Untitled
Abstract: No abstract text available
Text: VAT57N74 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p C1/C2 Min. Capacitance Ratio7.0 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.900 f(co) Min. (Hz) Cut-off freq.45G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C
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VAT57N74
Voltage60
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Untitled
Abstract: No abstract text available
Text: HA1926CCHIP Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p‘ C1/C2 Min. Capacitance Ratio3.9 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.700 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleChip
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HA1926CCHIP
Voltage30
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Untitled
Abstract: No abstract text available
Text: 1N5444CCHIP Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p‘ C1/C2 Min. Capacitance Ratio2.6 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.400 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleChip
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1N5444CCHIP
Voltage30
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Untitled
Abstract: No abstract text available
Text: 1N5444C06 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p C1/C2 Min. Capacitance Ratio3.1 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.400 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7
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1N5444C06
Voltage30
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12P05
Abstract: 12P06 P12P05 12P08 MTP12P05 P12P08 TM12P10 TM12P08 mtp12p06
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M TM 12P05 M TM 12P06 M TM 12P08 M TM 12P10 M T P 12P 05 M T P 12 P 0 6 M T P 12P 08 M T P 12P 10 Designer's Data Sheet P o w e r Field E ffe c t T ra n s is to r P-Channel Enhancem ent-M ode S ilic o n G ate T M O S
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12P05
12P06
12P08
12P10
21A-04
O-22QAB
P12P05
MTP12P05
P12P08
TM12P10
TM12P08
mtp12p06
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