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    12N60 12A 600V Search Results

    12N60 12A 600V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    12N60 12A 600V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12N60l

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 12N60 QW-R502-170 12N60l

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 12N60 QW-R502-170

    12N60L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 O-220 12N60 O-220F O-220F1 QW-R502-170 12N60L

    UTC12N60

    Abstract: 12n60g 12N60L 12n60 12a 600v 12N60 mosfet 12A 600V
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 O-220F O-220 12N60 O-220F1 O-262 QW-R502-170 UTC12N60 12n60g 12N60L 12n60 12a 600v mosfet 12A 600V

    12N60G

    Abstract: 12N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ 1 1 TO-220F TO-220F1 FEATURES * RDS ON = 0.8Ω @VGS = 10 V * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability


    Original     		PDF 12N60 O-220F O-220 12N60 O-220F1 O-262 QW-R502-170 12N60G

    12n60a

    Abstract: 12N60 12N60L 12n60 dc 12n60b 12A 650V MOSFET 12N-60a power mosfet 200A 12N60L-x-TF3-T 12N60G
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 12N60 12N60L 12N60G QW-R502-170 12n60a 12N60L 12n60 dc 12n60b 12A 650V MOSFET 12N-60a power mosfet 200A 12N60L-x-TF3-T 12N60G

    12n60 dc

    Abstract: 12n60
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 12N60 12N60L 12N60G QW-R502-170 12n60 dc

    tf 12n60

    Abstract: No abstract text available
    Text: AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC


    Original     		PDF AOT12N60FD/AOB12N60FD/AOTF12N60FD AOT12N60FD/AOB12N60FD/AOTF12N60FD AOT12N60FDL AOB12N60FDL AOTF12N60FDL O-220 O-263 O-220Fate tf 12n60

    RX12N60

    Abstract: 12N60
    Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX12N60 600V N 沟道功率 MOSFET 产品简介 地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893


    Original     		PDF RX12N60 Tel086-28-85198496 Fax086-28-8519893 RX12N60] 12N60 RX12N60, O-220AB, RX12N60

    F12n60

    Abstract: 12N60F 12N60 12N-60F 12n60 dc
    Text: AOT12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary The AOT12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT12N60FD/AOTF12N60FD AOT12N60FD/AOTF12N60FD AOT12N60FDL AOTF12N60FDL O-220 O-220F F12n60 12N60F 12N60 12N-60F 12n60 dc

    Untitled

    Abstract: No abstract text available
    Text: AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC


    Original     		PDF AOT12N60FD/AOB12N60FD/AOTF12N60FD AOT12N60FD/AOB12N60FD/AOTF12N60FD AOT12N60FDL AOB12N60FDL AOTF12N60FDL O-220 O-263 O-220F

    12N60 equivalent

    Abstract: 12N60 mosfet 600V 60A TO-220 silan mosfet 600V 60A TO-220 Power MOSFET Wafer
    Text: 3VD499600YL 3VD499600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD499600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø 3 1 Advanced termination scheme to provide enhanced


    Original     		PDF 3VD499600YL 3VD499600YL O-220 12N60; 12N60 equivalent 12N60 mosfet 600V 60A TO-220 silan mosfet 600V 60A TO-220 Power MOSFET Wafer

    12N60

    Abstract: 12n60 dc
    Text: 3VD499600YL 3VD499600YL 高压MOSFET芯片 描述 Ø 3VD499600YL为采用硅外延工艺制造的N沟道增 强型600V高压MOS功率场效应晶体管； 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；


    Original     		PDF 3VD499600YL 3VD499600YL 3VD499600YLN 600VMOS O-220 12N60 12N60 12n60 dc

    12n60c

    Abstract: 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB
    Text: [ /Title HGT G12N6 0C3D R, HGTP 12N60 C3DR, HGT1 S12N6 0C3D RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (24A, 600V, Rugged, UFS HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS CT ODU ODUCT


    Original     		PDF G12N6 12N60 S12N6 HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS GTG12N 12n60c 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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