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    12N120E Search Results

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    vq 123

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information Insulated Gate Bipolar Transistor MGW 12N120E N-Channel Enhancement-Mode Silicon Gate This Insulated Sate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    OCR Scan     		PDF O-247 125CC MGW12N120E vq 123

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 12N120E/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information 12N120E In su late d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced


    OCR Scan     		PDF MGW12N120E/D