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    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMX 12L1280 PRELIMINARY Die size: 12.6 x 12.6 mm Doc. No. 5SYA1309-01 Aug 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide


    Original     		12L1280 5SYA1309-01 CH-5600 PDF

    5SMX 12L1280

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMX 12L1280 Die size: 12.6 x 12.6 mm Doc. No. 5SYA1309-03 04 14 •     Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications


    Original     		12L1280 5SYA1309-03 CH-5600 5SMX 12L1280 PDF