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    CEP7030L

    Abstract: b703 CEB7030L B7030 p7030l
    Text: JU N 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 6 5 A , Rds on>= 8m Q D @ V gs =10V. Rd s(o n = 12itiQ @ V gs =4.5V. • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability.


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    PDF TQ-220 O-263 to-263 t0-220 CEP7030L/CEB7030L CEP7030L b703 CEB7030L B7030 p7030l