12GHZ VCO
Abstract: No abstract text available
Text: RFVC1800C RFVC1800C Connectorized Module Wideband MMIC VCO with Buffer Amp, 8 GHz to 12GHz CONNECTORIZED MODULE WIDEBAND MMIC VCO WITH BUFFER AMP, 8GHz TO 12GHz Package: Module, 3-Connectors, 22.86mmx22.86mmx13.97mm Features 8GHz to 12GHz VCO
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RFVC1800C
12GHz
RFVC1800C
86mmx22
86mmx13
12GHz
-66dBc/Hz
10kHz
-93dBc/Hz
12GHZ VCO
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zd801
Abstract: 12GHZ VCO
Text: ZD80120 8~12GHz Broadband VCO Test report is for reference only. TEST REPORT for ZD80120 1 ZD80120 8~12GHz Broadband VCO Technical Specification Frequency Range GHz 8 ~ 12 Tuning Voltage(V) 0 ~ +25 Power Supply(V / mA) +15/300 Phase Noise @ 100KHz(dBc / Hz)
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ZD80120
12GHz
100KHz
-105dBc
100KHz
-10dBc
zd801
12GHZ VCO
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NBT-168
Abstract: NBT-168-D NBT-168-T1 35 micro-X ceramic Package
Text: NBT-168 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier Product Description The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure,
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NBT-168
12GHz
NBT-168
12GHz.
NBT-168-D)
NBT-168)
NBT-168-D
NBT-168-T1
35 micro-X ceramic Package
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Untitled
Abstract: No abstract text available
Text: Preview MMS002AA DC-20GHz, 1.5dB Insertion Loss Absorptive SPDT Features • Low insertion loss, 1.0dB to 1.8dB typical from DC to 12GHz • High Isolation, 45dB to 60dB typical from DC to 12GHz • 1.35mm x 0.85mm x 0.1mm die size Isolation dB -10 -20 VCONTROL 0/-5V
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MMS002AA
DC-20GHz,
12GHz
42ower
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Untitled
Abstract: No abstract text available
Text: NBT-168 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier Product Description The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure,
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NBT-168
12GHz
NBT-168
12GHz.
NBT-168-D)
NBT-168)
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84-1LMI
Abstract: NBT-168 NBT-168-D NBT-168-T1 BO 336 choke flange
Text: NBT-168 4 MICROWAVE GaInP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier GENERAL PURPOSE AMPLIFIERS 4 Product Description The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure,
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NBT-168
12GHz
NBT-168
12GHz.
NBT-1685
NBT-168)
84-1LMI
NBT-168-D
NBT-168-T1
BO 336
choke flange
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84-1LMI
Abstract: GaN matching 100 watt NBT-168 MMB-330 NBT-168-D NBT-168-T1 GaN Amplifier 12GHz GaN Bias 25 watt 168E BJT IC Vce
Text: NBT-168 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier Product Description The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure,
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NBT-168
12GHz
NBT-168
12GHz.
NBT-168-D)
NBT-168)
84-1LMI
GaN matching 100 watt
MMB-330
NBT-168-D
NBT-168-T1
GaN Amplifier 12GHz
GaN Bias 25 watt
168E
BJT IC Vce
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Untitled
Abstract: No abstract text available
Text: 1/3 SMD Inductors(Coils) For High Frequency(Multilayer) Conformity to RoHS Directive MLK Series MLK0603 FEATURES • Supports operating frequency bands of up to 12GHz with nominal inductance values from 1 to 33nH. • The gigaspiral multilayer structure reduces self-resonant
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MLK0603
12GHz
300min.
160min.
200min.
mlk0603
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MLK0603
Abstract: No abstract text available
Text: 1/3 SMD Inductors(Coils) For High Frequency(Multilayer) Conformity to RoHS Directive MLK Series MLK0603 FEATURES • Supports operating frequency bands of up to 12GHz with nominal inductance values from 1 to 33nH. • The gigaspiral multilayer structure reduces self-resonant
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MLK0603
12GHz
160min.
200min.
300min.
mlk0603
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Untitled
Abstract: No abstract text available
Text: 1/3 SMD Inductors(Coils) For High Frequency(Multilayer) Conformity to RoHS Directive MLK Series MLK0603 FEATURES • Supports operating frequency bands of up to 12GHz with nominal inductance values from 1 to 33nH. • The gigaspiral multilayer structure reduces self-resonant
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MLK0603
12GHz
300min.
160min.
200min.
mlk0603
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Untitled
Abstract: No abstract text available
Text: 1/3 SMD Inductors(Coils) For High Frequency(Multilayer) Conformity to RoHS Directive MLK Series MLK0603 FEATURES • Supports operating frequency bands of up to 12GHz with nominal inductance values from 1 to 33nH. • The gigaspiral multilayer structure reduces self-resonant
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MLK0603
12GHz
60min.
300min.
160min.
200min.
mlk0603
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Untitled
Abstract: No abstract text available
Text: NBT-168 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier 2.94 min 3.28 max Pin 1 Indicator E S Lid ID 1.70 min 1.91 max 2.39 min 2.59 max W N E GaAs HBT Si Bi-CMOS SiGe HBT
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NBT-168
12GHz
NBT-168
12GHz.
NBT-168-D)
NBT-168)
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rfmd micro-x gaas
Abstract: No abstract text available
Text: NBT-168 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier 2.94 min 3.28 max Pin 1 Indicator E S Lid ID 1.70 min 1.91 max 2.39 min 2.59 max W N E GaAs HBT Si Bi-CMOS SiGe HBT
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NBT-168
12GHz
NBT-168
12GHz.
NBT-168-D)
NBT-168)
rfmd micro-x gaas
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Untitled
Abstract: No abstract text available
Text: RFVC1800 RFVC1800 Wideband MMIC VCO with Buffer Amplifier 8GHz to 12GHz RFMD’s RFVC1800 wideband voltage controlled oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5V supply for circuit bias and 0V to +13V VTUNE for frequency control. The
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RFVC1800
12GHz
RFVC1800
-93dBc/Hz
100kHz
DS1310002
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MLK1005
Abstract: No abstract text available
Text: 1/3 SMD Inductors(Coils) For High Frequency(Multilayer) Conformity to RoHS Directive MLK Series MLK1005 FEATURES • Supports operating frequency bands of up to 12GHz with nominal inductance values from 1 to 100nH. • Provides high Q characteristics. • Advanced monolithic structure is formed using a multilayering
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MLK1005
12GHz
100nH.
100nH
160min.
200min.
300min.
mlk1005
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rfvc1800sq
Abstract: No abstract text available
Text: RFVC1800 RFVC1800 WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8GHz to 12GHz Package: 4mmx4mmx1.1mm Product Description Features RFMD’s RFVC1800 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5V supply for circuit bias and 0 to +13V Vtune for frequency control. The
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RFVC1800
12GHz
RFVC1800
-93dBc/Hz
100kHz
DS110829
RFVC1800S2
rfvc1800sq
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Untitled
Abstract: No abstract text available
Text: NBT-168 0,&52:$9 *D,Q3*D$V ',6&5(7( +%7 '& 72 *+] 7\SLFDO $SSOLFDWLRQV • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier GENERAL PURPOSE AMPLIFIERS 4 3URGXFW 'HVFULSWLRQ The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure,
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NBT-168
NBT-168
12GHz.
NBT-168-D)
NBT-168)
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Untitled
Abstract: No abstract text available
Text: 1/3 SMD Inductors(Coils) For High Frequency(Multilayer) Conformity to RoHS Directive MLK Series MLK1005 FEATURES • Supports operating frequency bands of up to 12GHz with nominal inductance values from 1 to 100nH. • Provides high Q characteristics. • Advanced monolithic structure is formed using a multilayering
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MLK1005
12GHz
100nH.
100nH
300min.
160min.
200min.
mlk1005
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Untitled
Abstract: No abstract text available
Text: 1/3 SMD Inductors(Coils) For High Frequency(Multilayer) Conformity to RoHS Directive MLK Series MLK1005 FEATURES • Supports operating frequency bands of up to 12GHz with nominal inductance values from 1 to 100nH. • Provides high Q characteristics. • Advanced monolithic structure is formed using a multilayering
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MLK1005
12GHz
100nH.
100nH
300min.
160min.
200min.
mlk1005
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MLK1005
Abstract: MLK1005S82NJT MLK1005S12NJT MLK1005S2N7ST
Text: 1/3 SMD Inductors(Coils) For High Frequency(Multilayer) Conformity to RoHS Directive MLK Series MLK1005 FEATURES • Supports operating frequency bands of up to 12GHz with nominal inductance values from 1 to 100nH. • Provides high Q characteristics. • Advanced monolithic structure is formed using a multilayering
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MLK1005
12GHz
100nH.
100nH
300min.
160min.
200min.
mlk1005
MLK1005S82NJT
MLK1005S12NJT
MLK1005S2N7ST
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Untitled
Abstract: No abstract text available
Text: 1/3 SMD Inductors(Coils) For High Frequency(Multilayer) Conformity to RoHS Directive MLK Series MLK1005 FEATURES • Supports operating frequency bands of up to 12GHz with nominal inductance values from 1 to 100nH. • Provides high Q characteristics. • Advanced monolithic structure is formed using a multilayering
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MLK1005
12GHz
100nH.
100nH
60min.
300min.
160min.
200min.
mlk1005
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AS 031
Abstract: No abstract text available
Text: MAY 2 G 1992 TGS8630-SCC DC TO 12-GHz SPDT SWITCH D3628, SE P TEM B E R 1990 * On-Chip Driver Compatible With CMOS or Open-Collector TTL * Typical Insertion Loss . . . 2.3 dB at 12 GHz * High Isolation . . . 46 dB Through 12 GHz * Useable Bandwidth Through 18 GHz
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TGS8630-SCC
12-GHz
D3628,
46-dB
AS 031
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Untitled
Abstract: No abstract text available
Text: TGS8630-XCC DC TO 12-GHz SPDT SWITCH AP PR O VAL 5026 On-Chip Driver Compatible With CMOS or Open-Collector TTL Typical Insertion Loss . . . 2.3 dB at 12 GHz High Isolation . . . 46 dB Through 12 GHz Useable Bandwidth Through 18 GHz Size: 3,454 x 2,007 x 0,102 mm
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TGS8630-XCC
12-GHz
46-dB
1016x0
0040x0
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Untitled
Abstract: No abstract text available
Text: SPDT FET Switch TGS8630-XCC DC to 12-GHz Frequency Range On-Chip Driver Compatible with CMOS or Open-Collector TTL Typical Insertion Loss: 2.3-dB at 12-GHz High Isolation: 46-dB through 12-GHz Useable Bandwidth through 18-GHz 3,454 x 2,007 x 0,102 mm 0.136 x 0.079 x 0.004 in.
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TGS8630-XCC
12-GHz
46-dB
18-GHz
S8630-XCC
19-dB.
22-dBm.
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