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    abb igbt die

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1280 PRELIMINARY Die size: 6.6 x 6.5 mm Doc. No. 5SYA1306-01 July 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide


    Original     		PDF 12E1280 5SYA1306-01 CH-5600 abb igbt die

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    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1280 Die size: 6.6 x 6.5 mm Doc. No. 5SYA1306-03 04 14 •     Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications


    Original     		PDF 12E1280 5SYA1306-03 CH-5600