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    12CN10N Search Results

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    12CN10N Price and Stock

    Infineon Technologies AG IPD12CN10NGATMA1

    MOSFET N-CH 100V 67A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPD12CN10NGATMA1 Reel 2,500 2,500
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    • 10000 $0.67512
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    Avnet Americas IPD12CN10NGATMA1 Reel 16 Weeks 2,500
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    Mouser Electronics IPD12CN10NGATMA1 1,188
    • 1 $1.7
    • 10 $1.22
    • 100 $0.892
    • 1000 $0.694
    • 10000 $0.675
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    Newark IPD12CN10NGATMA1 Cut Tape 4,308 1
    • 1 $1.59
    • 10 $1.33
    • 100 $1.08
    • 1000 $0.795
    • 10000 $0.795
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    TME IPD12CN10NGATMA1 2,143 1
    • 1 $1.52
    • 10 $1.3
    • 100 $1.02
    • 1000 $0.93
    • 10000 $0.93
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    Chip1Stop IPD12CN10NGATMA1 Cut Tape 2,485
    • 1 $1.1
    • 10 $1.1
    • 100 $1.1
    • 1000 $1.1
    • 10000 $1.1
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    EBV Elektronik IPD12CN10NGATMA1 17 Weeks 2,500
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    Infineon Technologies AG IPB12CN10N-G

    MOSFET N-CH 100V 67A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPB12CN10N-G Reel
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    Infineon Technologies AG IPI12CN10N-G

    MOSFET N-CH 100V 67A TO262-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPI12CN10N-G Tube 500
    • 1 -
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    • 1000 $1.1354
    • 10000 $1.1354
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    Infineon Technologies AG IPP12CN10N-G

    MOSFET N-CH 100V 67A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPP12CN10N-G Tube 500
    • 1 -
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    • 1000 $1.08734
    • 10000 $1.08734
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    Infineon Technologies AG IPB12CN10NGATMA2

    MOSFET N-CH 100V 67A TO263-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPB12CN10NGATMA2 Reel
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    Find more 12CN10N price and stock on Findchips.com

    12CN10N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12CN10N

    Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 GS250 IPD12CN10
    Text: OptiMOS 2 Power-Transistor 12CN10N G 12CN10N G 12CN10N G 12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)


    Original     		PDF IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 GS250 IPD12CN10

    12CN10N

    Abstract: No abstract text available
    Text: 12CN10N G 12CN10N G 12CN10N G 12CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 12.4 mW ID • Very low on-resistance R DS(on)


    Original     		PDF IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N IEC61249-2-21 PG-TO263-3 12CN10N

    12CN10N

    Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 diode d335 12CN10
    Text: OptiMOS 2 Power-Transistor 12CN10N G 12CN10N G 12CN10N G 12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)


    Original     		PDF IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 diode d335 12CN10

    12CN10N

    Abstract: IPP12CN10N IPI12CN10N PG-TO220-3 d67a
    Text: 12CN10N G 12CN10N G 12CN10N G 12CN10N G OptiMOS 2 Power-Transistor Features Product Summary • N-channel, normal level V DS 100 V R DS on ,max (TO252) 12.4 mΩ • Excellent gate charge x R DS(on) product (FOM) ID • Very low on-resistance R DS(on)


    Original     		PDF IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 d67a

    12CN10N

    Abstract: 12CN10 diode d335 d67a IPP12CN10N D-335 IPD12CN10NG IPB12CN10N G
    Text: OptiMOS 2 Power-Transistor 12CN10N G 12CN10N G 12CN10N G 12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)


    Original     		PDF IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 12CN10N 12CN10N 12CN10 diode d335 d67a D-335 IPD12CN10NG IPB12CN10N G

    12CN10N

    Abstract: No abstract text available
    Text: OptiMOS 2 Power-Transistor 12CN10N G 12CN10N G 12CN10N G 12CN10N G Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 12.4 m: • Excellent gate charge x R DS(on) product (FOM) ID 67 A • Very low on-resistance R DS(on)


    Original     		PDF IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 12CN10N 12CN10N

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    12CN10N

    Abstract: IPP12CN10N IEC61249-2-21 IPI12CN10N PG-TO220-3 J-STD-20
    Text: OptiMOS 2 Power-Transistor 12CN10N G 12CN10N G 12CN10N G 12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)


    Original     		PDF IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N IEC61249-2-21 PG-TO263-3 12CN10N IEC61249-2-21 PG-TO220-3 J-STD-20