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    12A TRANSISTOR SMD Search Results

    12A TRANSISTOR SMD Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    12A TRANSISTOR SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IPG20N04S4-12A OptiMOS -T2 Power-Transistor Product Summary 40 VDS RDS on ,max4) V 12.2 mΩ 20 ID A Features • Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-10 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPG20N04S4-12A PG-TDSON-8-10 4N0412

    2SK3918

    Abstract: *K3918 SMD transistor Mu SMD TRANSISTOR 12a 2SK3918 equivalent
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3918 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 5 V drive available 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1


    Original     		PDF 2SK3918 O-252 Po12A 2SK3918 *K3918 SMD transistor Mu SMD TRANSISTOR 12a 2SK3918 equivalent

    12A transistor smd

    Abstract: SOT89 transistor marking 5A marking 3a SOT89 SMD TRANSISTOR 12a FCX617
    Text: Transistors SMD Type Switching Transistor FCX617 SOT-89 Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 Excellent HFE characteristics up to 12 amps. Extremely low saturation voltage E.g. 8mv Typ. +0.1 0.53-0.1 +0.1 0.48-0.1 RCE sat 50mÙ at 3A.


    Original     		PDF FCX617 OT-89 200mA 50MHz 12A transistor smd SOT89 transistor marking 5A marking 3a SOT89 SMD TRANSISTOR 12a FCX617

    SMD TRANSISTOR 12a

    Abstract: smd transistor marking p3 SMD TRANSISTOR MARKING P2 SMD TRANSISTOR MARKING ed smd transistor marking p1 MOSFET TRANSISTOR SMD MARKING A1 STTA1206G smd transistor marking Av 12A p transistor smd STTA1206D
    Text: STTA1206G  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 12A VRRM 600V trr typ 28ns VF (max) 1.5V K A IF(AV) K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode. ULTRA-FAST RECOVERY.


    Original     		PDF STTA1206G SMD TRANSISTOR 12a smd transistor marking p3 SMD TRANSISTOR MARKING P2 SMD TRANSISTOR MARKING ed smd transistor marking p1 MOSFET TRANSISTOR SMD MARKING A1 STTA1206G smd transistor marking Av 12A p transistor smd STTA1206D

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC Transistor SMD Type Product specification FMMT617TA SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Power Dissipation: Ptot=625mW 1 0.55 • Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 ● Collector Current: IC=3A


    Original     		PDF FMMT617TA OT-23 625mW 200mA, 50MHz

    MIC26950

    Abstract: EPCOS 475 35v CERAMIC 2r2 DALE SMD resistors 2r2 06035C104KAT2A C1608X7R1H104K GRM188R71H104KA93D GRM32ER71H475KA88L
    Text: MIC26950 Evaluation Board 26V/12A Hyper Speed Control Synchronous DC/DC Buck Regulator SuperSwitcher IITM General Description The MIC26950 DC/DC regulator operates over an input supply range of 4.5V to 26V and provides a regulated output at up to 12A of output current. The output voltage is


    Original     		PDF MIC26950 6V/12A 300kHz. M9999-092910-A EPCOS 475 35v CERAMIC 2r2 DALE SMD resistors 2r2 06035C104KAT2A C1608X7R1H104K GRM188R71H104KA93D GRM32ER71H475KA88L

    SMD TRANSISTOR 12a

    Abstract: 2SK3456
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3456 TO-263 Unit: mm +0.1 1.27-0.1 Features Low gate charge +0.1 1.27-0.1 +0.2 4.57-0.2 MAX. VGS = 10 V, ID = 6.0 A 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS(on) = 0.60 Avalanche capability ratings Surface mount package available


    Original     		PDF 2SK3456 O-263 SMD TRANSISTOR 12a 2SK3456

    npn smd 3a

    Abstract: FMMT617TA ic3a
    Text: Transistors SMD Type NPN Silicon Power Transistor FMMT617TA SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Power Dissipation: Ptot=625mW 1 0.55 • Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 ● Collector Current: IC=3A


    Original     		PDF FMMT617TA OT-23 625mW 200mA, 50MHz npn smd 3a FMMT617TA ic3a

    ISL-706

    Abstract: 5962R11212 HS-26CLV32RH ISL706 IS1825 IC free Intersil HS-1840ARH
    Text: P WERING SPACE Payload and Bus Satellite Systems, Launch Vehicles P WERING SPACE Intersil's history and experience in the All Intersil SMD products are MIL-PRF-38535/ space and defense industries spans almost QML compliant and are 100% burned in. six decades beginning with the founding


    Original     		PDF MIL-PRF-38535/ D-85737 1-888-INTERSIL BR-558 ISL-706 5962R11212 HS-26CLV32RH ISL706 IS1825 IC free Intersil HS-1840ARH

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPL65R195C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPL65R195C7 1Description ThinPAK8x8


    Original     		PDF IPL65R195C7

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPA65R095C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPA65R095C7 1Description TO-220FP


    Original     		PDF IPA65R095C7 O-220

    BUL56BSMD

    Abstract: No abstract text available
    Text: BUL56BSMD NPN FAST SWITCHING TRANSISTOR MECHANICAL DATA Dimensions in mm FEATURES 1 3 • ULTRA FAST TURN–ON AND TURN–OFF SWITCHING tr / tf = 40ns 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M a x .


    Original     		PDF BUL56BSMD 500mA 300ms BUL56BSMD

    IRHN7450SE

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1313A REPETITIVE AVALANCHE AND dv/dt RATED IRHN7450SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500 Volt, 0.51Ω International Rectifier’s (SEE) RAD HARD technology


    Original     		PDF IRHN7450SE IRHN7450SE

    IRHN7450SE

    Abstract: No abstract text available
    Text: PD - 91313B IRHN7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.51Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation


    Original     		PDF 91313B IRHN7450SE 500Volt, Rectifi10) IRHN7450SE

    65C7045

    Abstract: TO-247 65c7045
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPP65R045C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPP65R045C7 1Description TO-220 tab


    Original     		PDF IPP65R045C7 O-220 65C7045 TO-247 65c7045

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPB65R045C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPB65R045C7 1Description D²PAK


    Original     		PDF IPB65R045C7

    65C7045

    Abstract: DT80A
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPB65R045C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPB65R045C7 1Description D²PAK


    Original     		PDF 650VCoolMOSTMC7PowerTransistor IPB65R045C7 IPB65R045C7 65C7045 DT80A

    transistor c373

    Abstract: c380 transistor transistor c375 transistor c380 o transistor c380 AN-994 IRGBC30MD2-S SMD-220 C380 ge Tx/c380 transistor
    Text: PD - 9.1143 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


    Original     		PDF IRGBC30MD2-S 10kHz) SMD-220 C-380 transistor c373 c380 transistor transistor c375 transistor c380 o transistor c380 AN-994 IRGBC30MD2-S SMD-220 C380 ge Tx/c380 transistor

    diode 6t6

    Abstract: SMD TRANSISTOR 12a P5 smd transistor STTA1206M diode smd 600V soft recovery smd diode 600v 1a smd transistor xf SMD a7 Transistor smd transistor A7 s 22
    Text: f Z ^ 7 7 # S G S -T H O M S O N STTA _ 1206M ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If av 12A V rrm 600V trr (typ) 28ns V f (max) 1.5V FEATURES AND BENEFITS • SPECIFIC TO “FREEWHEEL MODE” OPERA­ TIONS: Freewheel or Booster Diode.


    OCR Scan     		PDF STTA1206M 00b0G7fl diode 6t6 SMD TRANSISTOR 12a P5 smd transistor STTA1206M diode smd 600V soft recovery smd diode 600v 1a smd transistor xf SMD a7 Transistor smd transistor A7 s 22

    SMD transistor k21

    Abstract: No abstract text available
    Text: International US Rectifier HEXFRED PD-2.381 Provisional Data Sheet HFA40HF60 ULTRA FAST, SOFT RECOVERY DIODE Features: — Ultrafast Recovery — Ultra Soft Recovery — Very Low Ir r m — Very Low Qrr — Guaranteed Avalanche — Specified at Operating Conditions


    OCR Scan     		PDF HFA40HF60 HFA40HF60 00A/pS, 00A//1S, SMD transistor k21

    SMD transistor k22

    Abstract: SMD transistor k21 SMD TRANSISTOR 12a fast recovery diode 600v 12A k22 smd 12A transistor smd SMD K22 HFA40HF60 diode smd 600V soft recovery
    Text: International füg Rectifier HEXFRED P D -2 .3 8 1 Provisional Data Sheet HFA40HF60 u l t r a fa s t, s o f t RECOVERY DIODE Characteristics Vbr Units 600 V 'F AV 12 A trr 75 ns Qrr 375 nC 10 A 2.0 V 600V, 12A Features: — Ultrafast Recovery — Ultra Soft Recovery


    OCR Scan     		PDF HFA40HF60 00A/ps, 200AIpS, SMD transistor k22 SMD transistor k21 SMD TRANSISTOR 12a fast recovery diode 600v 12A k22 smd 12A transistor smd SMD K22 diode smd 600V soft recovery

    JTs smd diode

    Abstract: TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE smd transistor marking p3 12A p transistor smd 12A transistor smd SMD TRANSISTOR 12a smd transistor marking 1j transistor smd sG SMD TRANSISTOR MARKING P2 STTA1206D/DI/G
    Text: rz7 SGS-THOMSON ^ 7 # M O œ iL E O T M Û S S T T A 1206G TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 12A V rrm 600V trr (typ) 28ns Vf (max) 1.5V FEATURES AND BENEFITS • SPECIFIC TO ’’FREEWHEEL MODE” OPERA­


    OCR Scan     		PDF 1206G JTs smd diode TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE smd transistor marking p3 12A p transistor smd 12A transistor smd SMD TRANSISTOR 12a smd transistor marking 1j transistor smd sG SMD TRANSISTOR MARKING P2 STTA1206D/DI/G

    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifier Provisional Data Sheet No. PD-9.1313A IRHN7450SE REPETITIVE A V A LA N C H E AN D dv/dt RA TED HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 500 Volt, 0.510 , (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology


    OCR Scan     		PDF IRHN7450SE

    IRHN7450SE

    Abstract: No abstract text available
    Text: | p j j -0 p p q j-j q p q | Provisional Data Sheet No. PD-9.1313A I R Rectifier IRHN7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD 500 Volt, 0.51 Q, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology


    OCR Scan     		PDF IRHN7450SE IRHN7450SE